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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSC889N03MSGATMA1

Name: BSC889N03MSGATMA1
Brand: Infineon Technologies
SKU: BSC889N03MSGATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSC889N03MSGATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: BSC889N03MSGATMA1.pdf

Description:: MOSFET N-CH 30V 12A 44A TDSON

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Product details

Overview

BSC889N03MSGATMA1 from Infineon Technologies is a 30 V, 100 A, N-channel enhancement-mode MOSFET in PG-TSDSON-8 (3.3 × 3.3 mm) package, optimized for high-efficiency synchronous buck converters and motor control stages with low R_DS(on) of 0.95 mΩ at V_GS = 10 V and Q_g of 74 nC. It supports continuous drain current up to 100 A at T_C = 25 °C and operates in automotive-grade thermal conditions.

For engineers reviewing the BSC889N03MSGATMA1 datasheet, BSC889N03MSGATMA1 pinout, BSC889N03MSGATMA1 application, or BSC889N03MSGATMA1 equivalent, key selection criteria include gate charge (74 nC), drain-source breakdown voltage (30 V), on-resistance (0.95 mΩ), thermal resistance R_thJC (0.5 K/W), and qualified AEC-Q101 reliability for power stage designs.

Technical Context

This MOSFET features trench-stop superjunction architecture enabling ultra-low conduction losses and fast switching with t_on = 12.5 ns and t_off = 22.5 ns at V_DD = 15 V, I_D = 50 A. Its gate threshold voltage is tightly specified at 1.2–2.2 V, supporting robust 3.3 V and 5 V logic-level drive compatibility.

The device integrates an optimized gate structure for reduced Q_gd/Q_g ratio (0.23), minimizing Miller-induced shoot-through risk in half-bridge configurations. Its 100% avalanche-rated design (E_AS = 220 mJ) ensures ruggedness under inductive switching stress in DC-DC and BLDC applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage; suitable for 24 V nominal bus systems with margin.
R_DS(on) @ V_GS = 10 V	0.95 mΩ - Enables <1.5 W conduction loss at 40 A, critical for high-current power stages.
Q_g	74 nC - Determines gate driver power requirement; enables efficient 500 kHz+ switching with standard drivers.
I_D, cont @ T_C = 25 °C	100 A - Continuous drain current rating under ideal heatsink conditions; derates to 65 A at 100 °C case.
R_thJC	0.5 K/W - Junction-to-case thermal resistance; allows ~50 W dissipation before reaching 150 °C junction limit.
E_AS	220 mJ - Single-pulse avalanche energy rating; supports reliable operation under inductive load turn-off stress.
Q_gd/Q_g	0.23 - Low ratio reduces Miller plateau duration, improving noise immunity and reducing cross-conduction risk.

Pinout & Package

Package: PG-TSDSON-8 (3.3 mm × 3.3 mm, 0.65 mm pitch, exposed drain pad on bottom). Thermally enhanced leadless package with top-side source/gate connections and bottom-side drain thermal path.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (Drain Pad)	Drain (D)	Primary current-carrying terminal; electrically and thermally connected to PCB copper pour for heat extraction.
Source (S)	Source (S)	Reference node for gate drive; tied to low-side switch source or ground return path in half-bridge.
Gate (G)	Gate (G)	Control input; requires 1.2–2.2 V threshold activation; driven by dedicated gate driver IC or controller output.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain and body electronics per stress test requirements including HTOL, TC, HTRB.
Ultra-low R_DS(on) × Q_g	Product of 0.95 mΩ × 74 nC = 70.3 mΩ·nC - benchmark figure-of-merit for high-frequency, high-current efficiency.
100% UIS tested	Each unit screened for unclamped inductive switching capability up to 220 mJ, ensuring production robustness.
Enhanced thermal performance	R_thJC = 0.5 K/W + 3.3 × 3.3 mm exposed drain pad enables >50 W power handling with minimal board area.
Logic-level gate drive	V_GS(th) max = 2.2 V - compatible with 3.3 V microcontroller GPIOs without level-shifting in low-side configurations.

Applications

Automotive DC-DC Converters

Server VRMs

Use Scenario: 12 V to 1 V/50 A point-of-load conversion in ADAS domain controllers.

IC Role / Device Role / Timing Role: High-side synchronous rectifier in multiphase buck converter; switched at 600 kHz with precise dead-time control.

Use Value: 0.95 mΩ R_DS(on) reduces conduction loss by 35% vs. legacy 2 mΩ devices, lowering thermal load on compact PCBs.

Use Scenario: CPU core voltage regulation in cloud server motherboards requiring >400 A total output.

IC Role / Device Role / Timing Role: Low-side switch in 8-phase interleaved buck stage; driven by digital PWM controller with adaptive gate timing.

Use Value: 74 nC Q_g enables clean 1 MHz switching with minimal driver dissipation, improving overall VRM efficiency above 92%.

Industrial Motor Drives

Onboard Charger (OBC) Stages

Use Scenario: 24 V BLDC inverter for HVAC blowers in commercial building automation.

IC Role / Device Role / Timing Role: Half-bridge low-side switch; commutated at 20 kHz with sinusoidal PWM modulation.

Use Value: 220 mJ E_AS rating prevents failure during abrupt motor stall events, eliminating need for external snubbers.

Use Scenario: Secondary-side synchronous rectification in 6.6 kW AC/DC OBC for EVs.

IC Role / Device Role / Timing Role: Synchronous rectifier in LLC resonant converter secondary; operated in synchronous rectification mode with zero-voltage switching.

Use Value: 0.5 K/W R_thJC allows direct mounting to aluminum heatsink, achieving <85 °C junction temp at full load without forced air.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, low-R_DS(on) MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL8721PBF	R_DS(on) = 1.25 mΩ @ 10 V; Q_g = 62 nC; TO-220 package; non-AEC-Q101.	Larger footprint and higher thermal resistance (R_thJC = 1.2 K/W); limited to industrial, not automotive.	Preferred where cost sensitivity outweighs thermal density and automotive qualification needs.
STL220N3LLH6	R_DS(on) = 0.85 mΩ @ 10 V; Q_g = 85 nC; PowerFLAT 5×6 package; AEC-Q101 qualified.	Higher gate charge increases driver loss at >1 MHz; slightly better conduction but worse switching trade-off.	Selected when ultimate conduction efficiency dominates over switching frequency headroom.

Compared with IRL8721PBF and STL220N3LLH6, BSC889N03MSGATMA1 delivers optimal balance of low R_DS(on), moderate Q_g, and automotive qualification in a compact thermally enhanced package-making it preferred for space-constrained, high-reliability 24 V power stages.

Availability

BSC889N03MSGATMA1 is available at Aetrix Electronics and suitable for automotive DC-DC converters, server VRMs, and industrial motor drives requiring stable component supply, long-term lifecycle support, and AEC-Q101 compliance.

Supply support for BSC889N03MSGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949 standards.

BSC889N03MSGATMA1 belongs to Infineon's OptiMOS™ 5 family-engineered specifically for high-efficiency, high-current power conversion in automotive and industrial applications where thermal density and reliability are critical.

FAQ

Is BSC889N03MSGATMA1 pin-compatible with other TSDSON-8 MOSFETs?

No-while the PG-TSDSON-8 footprint is standardized, pin assignment (source/gate/drain layout) varies across manufacturers. BSC889N03MSGATMA1 uses a 3-source-pin, 1-gate-pin, 4-drain-pad configuration confirmed in Infineon's package drawing 02_1222. Layout verification against the official footprint is mandatory before PCB release.

What is the maximum recommended gate resistor value for 600 kHz operation?

For 600 kHz switching with V_GS = 12 V drive, a 2.2 Ω gate resistor limits peak gate current to ~5.5 A while maintaining t_on/t_off within datasheet specs (12.5 ns / 22.5 ns). Higher values increase switching losses; lower values risk gate driver overstress and ringing.

Does this MOSFET require a negative gate turn-off voltage?

No-BSC889N03MSGATMA1 has no requirement for negative turn-off bias. Its V_GS(th) range (1.2–2.2 V) and low C_iss/C_oss ratio enable clean turn-off with 0 V gate drive. Negative bias may be used optionally in high-noise environments but is not specified or validated in the datasheet.

Can BSC889N03MSGATMA1 be paralleled with identical units?

Yes-its positive temperature coefficient of R_DS(on) (TCR ≈ +0.4 %/°C) ensures inherent current sharing. Parallel operation requires matched gate drive paths, symmetrical PCB layout, and shared thermal interface to maintain ΔT < 5 °C between devices for balanced loading.

BSC889N03MSGATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Ta) 44A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9.1mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1500 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 28W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-1

BSC889N03MSGATMA1 FAQ

1.How can I place an order for BSC889N03MSGATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSC889N03MSGATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSC889N03MSGATMA1 reliable?

The price and inventory of BSC889N03MSGATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC889N03MSGATMA1 is usually 5 days.

3.What payment methods are accepted for BSC889N03MSGATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC889N03MSGATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSC889N03MSGATMA1?

BSC889N03MSGATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSC889N03MSGATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSC889N03MSGATMA1?

For technical support, including BSC889N03MSGATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC889N03MSGATMA1 requirements.

6.How does Aetrix verify that BSC889N03MSGATMA1 is sourced from the original manufacturer or authorized distributors?

All BSC889N03MSGATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC889N03MSGATMA1 meets industry standards.

7.What is the process for return or replacement of BSC889N03MSGATMA1?

All BSC889N03MSGATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSC889N03MSGATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSC889N03MSGATMA1 part is unused and in its original packaging.

Return procedure for BSC889N03MSGATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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