Infineon Technologies BSP171PL6327HTSA1

Overview

BSP171PL6327HTSA1 from Infineon Technologies is a P-channel enhancement-mode SIPMOS® small-signal MOSFET rated for −60 V V_DS, 0.21 Ω R_DS(on) at V_GS = −10 V and I_D = −1.9 A, avalanche- and dv/dt-rated, and qualified to AEC-Q101 for automotive use. It operates in logic-level gate drive systems and serves as a high-reliability load switch in 12 V automotive body electronics.

For engineers reviewing the BSP171PL6327HTSA1 datasheet, BSP171PL6327HTSA1 pinout, BSP171PL6327HTSA1 application, or BSP171PL6327HTSA1 equivalent, key selection criteria include its −1.5 V gate threshold voltage, 1.4–2.7 S transconductance, −1.9 A continuous drain current, SOT-223 thermal performance (R_thJA = 70 K/W with 6 cm² copper), and integrated avalanche energy rating of 1.8 mJ.

Technical Context

This device implements a trench-based P-channel MOSFET structure optimized for low gate charge (Q_g = −13 to −20 nC) and fast switching (t_r = 25–33 ns, t_f = 87–130 ns), enabling efficient operation in PWM-controlled DC loads. Its −1.5 V typical V_GS(th) ensures reliable turn-on with standard 3.3 V or 5 V logic outputs without level-shifting.

The integrated body diode exhibits t_rr = 80–120 ns and Q_rr = −125 to −190 nC, supporting synchronous rectification and flyback recovery in compact power stages. Thermal design leverages the SOT-223 package's 25 K/W R_thJS to soldering point for direct PCB heat transfer.

Key Specifications

Pinout & Package

Supplied in PG-SOT223 (SOT-223) package with exposed drain pad for thermal conduction. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source, Pin 4 = Drain (tab). Mounting requires soldering the tab to ≥6 cm² copper area on one PCB layer.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Compared with DMG2305UX-13 and IPD250N06L3G, BSP171PL6327HTSA1 uniquely balances −60 V rating, logic-level gate, SOT-223 form factor, and AEC-Q101 qualification-making it optimal for space- and reliability-constrained 12/24 V automotive switches where drop-in replacement and qualification traceability are mandatory.

Availability

BSP171PL6327HTSA1 is available at Aetrix Electronics and suitable for automotive door modules, LED headlamp dimming circuits, and body control units requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for BSP171PL6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification infrastructure.

This device belongs to Infineon's SIPMOS® small-signal MOSFET product line, engineered specifically for high-reliability, logic-compatible switching in automotive body electronics and industrial control applications.

FAQ

Is BSP171PL6327HTSA1 suitable for high-side switching in 24 V automotive systems?

Yes. With −60 V V_DS rating, AEC-Q101 qualification, and −1.5 V V_GS(th), it supports 24 V nominal systems including load-dump transients up to ±60 V. Its SOT-223 drain-tab configuration enables robust high-side implementation when source is tied to battery rail and gate driven relative to source.

What is the maximum continuous drain current at 105 °C ambient temperature?

At T_A = 105 °C with 6 cm² copper cooling, the device delivers −1.1 A continuous drain current. This is derived from the derating curve on page 4 of the datasheet: P_tot drops to ~0.8 W at 105 °C, and with R_DS(on) ≈ 0.25 Ω at elevated temperature, I_D = √(P/R) ≈ √(0.8/0.25) ≈ 1.1 A.

Does BSP171PL6327HTSA1 include an integrated ESD protection diode?

No. It carries JESD22-A114-HBM Class 1a ESD rating (≥250 V), but no dedicated on-chip ESD protection diode is implemented. External TVS or RC filtering is recommended for gate protection in noisy automotive environments per application note AN2015-05.

Can this MOSFET replace BSP170P in existing designs?

Yes, with verification. BSP171P offers identical SOT-223 package, −60 V rating, and improved R_DS(on) (0.21 Ω vs. 0.25 Ω) and lower Q_g. Layout is pin-compatible, but gate threshold is slightly tighter (−1.5 V vs. −1.7 V), requiring validation of MCU drive strength and noise margin in high-temperature operation.