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Infineon Technologies IRL7833PBF
- Part No.:
- IRL7833PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
IRL7833PBF.pdf
- Description:
- MOSFET N-CH 30V 150A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:3,486
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Product details
Overview
IRL7833PBF from Infineon Technologies is a 30V, 140A N-channel HEXFET Power MOSFET in TO-262 package, optimized for high-frequency synchronous buck converters in CPU power delivery and telecom DC-DC systems. It delivers 3.8 mΩ RDS(on) at VGS = 4.5V, 32 nC total gate charge, and 1.04°C/W junction-to-case thermal resistance.
For engineers reviewing the IRL7833PBF datasheet, IRL7833PBF pinout, IRL7833PBF application, or IRL7833PBF equivalent, key selection criteria include low-voltage gate drive capability (4.5V logic-level), avalanche-rated ruggedness (560 mJ EAS), body diode reverse recovery performance (Qrr = 34–51 nC), and thermal management suitability for high-current PCB-mount designs.
Technical Context
This MOSFET employs planar silicon HEXFET architecture with fully characterized unclamped inductive switching (UIS) capability and temperature-stable threshold voltage (−11 mV/°C coefficient). Its ultra-low gate impedance supports fast switching with minimal drive loss in hard-switched topologies.
The device integrates a robust intrinsic body diode with 42–63 ns reverse recovery time and 1.2 V forward drop at 30 A, enabling efficient synchronous rectification without external Schottky supplementation in isolated and non-isolated DC-DC converters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage compatible with 24 V input rails and transient overvoltage margins in telecom and computing power stages. |
| RDS(on) max @ 4.5 V | 3.8 mΩ - Enables <1 W conduction loss at 140 A DC, critical for high-efficiency CPU core VRMs. |
| Qg | 32 nC - Low gate charge reduces driver power and enables clean 1–2 MHz switching in synchronous buck controllers. |
| EAS | 560 mJ - Single-pulse avalanche energy rating ensures reliability under inductive fault conditions without snubbers. |
| Qrr | 34–51 nC - Quantified reverse recovery charge directly impacts shoot-through risk and loss distribution in synchronous FETs. |
| RθJC | 1.04 °C/W - High thermal conductivity to heatsink supports >100 W continuous dissipation with standard mounting torque (1.1 N·m). |
Pinout & Package
IRL7833PBF uses the TO-262 (I²PAK) package: 3-pin, single-ended, surface-mount compatible with through-hole heatsinking. Case is electrically connected to drain.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current path output / heat transfer interface | Electrically tied to metal tab; must be isolated from heatsink unless system ground reference permits direct connection. |
| Source | Return path for load current / reference node for gate drive | Serves as common return for both channel conduction and body diode conduction; defines local ground for gate driver supply. |
| Gate | Control terminal for channel modulation | High-impedance input requiring <32 nC charge for full enhancement; sensitive to dV/dt coupling due to Qgd/Qgs1 ratio. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Guaranteed turn-on at 4.5 V VGS, eliminating need for level-shifters in 5 V or 3.3 V controller interfaces. |
| Fully characterized avalanche | Rated for 560 mJ single-pulse energy at TJ = 25°C, enabling robust operation in unclamped inductive loads. |
| Low Qgd/Qgs1 ratio | Minimizes Cdv/dt induced turn-on risk in high-dV/dt synchronous FET positions (e.g., low-side switch in buck converter). |
| Enhanced body diode performance | Qrr = 34–51 nC and trr = 42–63 ns support zero-voltage switching transitions and reduce cross-conduction losses. |
Applications
| Server CPU Voltage Regulator | Telecom Isolated DC-DC |
|---|---|
Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.5 V to modern x86 processors at up to 300 A peak. IC Role / Device Role: Low-side synchronous rectifier FET handling continuous 140 A DC and pulsed 600 A surge currents. Use Value: 3.8 mΩ RDS(on) at 4.5 V enables >95% efficiency at 100 A, while 1.04°C/W RθJC allows direct heatsink mounting without thermal derating. | Use Scenario: Secondary-side synchronous rectifier in 48 V input, 12 V output isolated flyback or forward converter for 5G base station power modules. IC Role / Device Role: Synchronous rectifier replacing Schottky diode to reduce conduction loss and improve light-load efficiency. Use Value: Body diode Qrr ≤ 51 nC prevents excessive voltage overshoot during reverse recovery, reducing stress on primary-side switch and EMI filter requirements. |
| Industrial Motor Drive Half-Bridge | Automotive ADAS Power Supply |
Use Scenario: Half-bridge leg in 24 V BLDC motor gate driver stage requiring 100 kHz PWM and short-circuit withstand capability. IC Role / Device Role: High-current, avalanche-rugged switching element rated for repetitive UIS events during stall or overload. Use Value: 560 mJ EAS and 140 A continuous ID allow safe operation under motor lock-up without external protection circuitry. | Use Scenario: Input-stage hot-swap and load switch in 12 V automotive camera module power rail with strict EMC and thermal constraints. IC Role / Device Role: High-side power switch controlling 12 V supply to image sensor and ISP subsystem. Use Value: 30 V VDS rating accommodates load-dump transients up to ISO 7637-2 Pulse 5a; TO-262 package enables mechanical retention and thermal coupling to chassis ground. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRL7833SPBF | D2PAK (TO-263) package; identical electrical specs but higher RθJA (40°C/W vs. 62°C/W) in PCB mount. | Better suited for surface-mount-only assembly with thermal vias; less effective for bolted heatsink cooling. | Select when automated SMT placement is required and board-level thermal design includes copper pour and thermal vias. |
| IRL7833LPBF | TO-220AB package; same die but different leadframe; RθJC = 0.96°C/W, slightly lower than IRL7833PBF's 1.04°C/W. | Preferred for legacy through-hole designs with clip-on heatsinks; requires larger footprint than TO-262. | Select when mechanical compatibility with existing TO-220 footprints or vertical heatsink mounting is mandatory. |
Compared with IRL7833SPBF and IRL7833LPBF, the IRL7833PBF offers optimal thermal interface geometry for bolted heatsink applications in high-power computing and telecom systems, balancing low RθJC, compact TO-262 footprint, and proven reliability in multi-year field deployments.
Availability
IRL7833PBF is available at Aetrix Electronics and suitable for server CPU voltage regulators, telecom isolated DC-DC converters, industrial motor drives, and automotive ADAS power supplies requiring stable component supply and long-term lifecycle assurance.
Supply support for IRL7833PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.
The IRL7833 series belongs to Infineon's HEXFET Power MOSFET product line, designed specifically for high-efficiency, high-frequency DC-DC conversion in computing, telecom, and industrial power systems where low RDS(on) and fast switching are essential.
FAQ
What is the maximum continuous drain current for IRL7833PBF at 100°C case temperature?
The maximum continuous drain current is 110 A at TC = 100°C with VGS = 10 V, as specified in the Absolute Maximum Ratings table. This reflects thermal limitation rather than silicon capability, and actual usable current depends on heatsink performance and ambient conditions.
Does IRL7833PBF have a built-in body diode, and what are its key parameters?
Yes, it features an integrated intrinsic body diode with VSD ≤ 1.2 V at 30 A, reverse recovery time trr = 42–63 ns, and reverse recovery charge Qrr = 34–51 nC. These values are measured at TJ = 25°C with di/dt = 100 A/µs and are critical for synchronous rectifier loss modeling.
Can IRL7833PBF be driven directly by a 3.3 V microcontroller GPIO?
No - although rated as "logic-level," its guaranteed turn-on threshold is defined at VGS(th) = 1.4–2.3 V, but full enhancement (RDS(on) ≤ 3.8 mΩ) requires ≥4.5 V. A 3.3 V GPIO cannot reliably achieve this; a gate driver or level shifter is required for robust operation.
What is the recommended mounting torque for the IRL7833PBF TO-262 package?
The recommended mounting torque is 1.1 N·m (10 lbf·in) for 6-32 or M3 screws, as specified in the Absolute Maximum Ratings table. Exceeding this may damage the package or compromise thermal interface integrity; insufficient torque increases RθCS and risks thermal runaway under high load.
IRL7833PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 150A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.8mOhm @ 38A, 10V
- Vgs(th) (Max) @ Id:
- 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 47 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4170 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 140W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
IRL7833PBF FAQ
1.How can I place an order for IRL7833PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRL7833PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRL7833PBF reliable?
The price and inventory of IRL7833PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL7833PBF is usually 5 days.
3.What payment methods are accepted for IRL7833PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL7833PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRL7833PBF?
IRL7833PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRL7833PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRL7833PBF?
For technical support, including IRL7833PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL7833PBF requirements.
6.How does Aetrix verify that IRL7833PBF is sourced from the original manufacturer or authorized distributors?
All IRL7833PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL7833PBF meets industry standards.
7.What is the process for return or replacement of IRL7833PBF?
All IRL7833PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRL7833PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRL7833PBF part is unused and in its original packaging.
Return procedure for IRL7833PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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