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FETs, MOSFETs
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IAUS300N08S5N011ATMA1MOSFET_(75V 120V( PG-HSOG-8 Infineon Technologies |
6,181 | 0.00 |
|
Datasheet |
OptiMOS™ | 8-PowerSMD, Gull Wing | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 410A (Tj) | 6V, 10V | 1.1mOhm @ 100A, 10V | 3.8V @ 275µA | 231 nC @ 10 V | ±20V | 16250 pF @ 40 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HSOG-8-1 |
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IPB65R280C6ATMA1MOSFET N-CH 650V 13.8A D2PAK Infineon Technologies |
5,927 | 0.00 |
|
Datasheet |
CoolMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 13.8A (Tc) | 10V | 280mOhm @ 4.4A, 10V | 3.5V @ 440µA | 45 nC @ 10 V | ±20V | 950 pF @ 100 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
|
IRFSL59N10DMOSFET N-CH 100V 59A TO262 Infineon Technologies |
9,094 | 0.00 |
|
Datasheet |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 59A (Tc) | 10V | 25mOhm @ 35.4A, 10V | 5.5V @ 250µA | 114 nC @ 10 V | ±30V | 2450 pF @ 25 V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
|
|
BTS113AE3045ANTMA1MOSFET N-CH 60V 11.5A TO220AB Infineon Technologies |
5,535 | 0.00 |
|
Datasheet |
TEMPFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 11.5A (Tc) | 4.5V | 170mOhm @ 5.8A, 4.5V | 2.5V @ 1mA | - | ±10V | 560 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-220AB |
|
BSC016N04LSGATMA1MOSFET N-CH 40V 31A/100A TDSON Infineon Technologies |
8,181 | 0.00 |
|
Datasheet |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 31A (Ta), 100A (Tc) | 4.5V, 10V | 1.6mOhm @ 50A, 10V | 2V @ 85µA | 150 nC @ 10 V | ±20V | 12000 pF @ 20 V | - | 2.5W (Ta), 139W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-1 |
|
IPD90P03P404ATMA1MOSFET P-CH 30V 90A TO252-3 Infineon Technologies |
5,233 | 0.00 |
|
Datasheet |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 90A (Tc) | 10V | 4.5mOhm @ 90A, 10V | 4V @ 253µA | 130 nC @ 10 V | ±20V | 10300 pF @ 25 V | - | 137W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 |
|
|
IRF1404STRRMOSFET N-CH 40V 162A D2PAK Infineon Technologies |
5,202 | 0.00 |
|
Datasheet |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 162A (Tc) | 10V | 4mOhm @ 95A, 10V | 4V @ 250µA | 200 nC @ 10 V | ±20V | 7360 pF @ 25 V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
|
IRF1405STRRMOSFET N-CH 55V 131A D2PAK Infineon Technologies |
2,769 | 0.00 |
|
Datasheet |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 131A (Tc) | 10V | 5.3mOhm @ 101A, 10V | 4V @ 250µA | 260 nC @ 10 V | ±20V | 5480 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
IRFB23N20DMOSFET N-CH 200V 24A TO220AB Infineon Technologies |
8,371 | 0.00 |
|
Datasheet |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 24A (Tc) | 10V | 100mOhm @ 14A, 10V | 5.5V @ 250µA | 86 nC @ 10 V | ±30V | 1960 pF @ 25 V | - | 3.8W (Ta), 170W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
|
|
IRL2910LMOSFET N-CH 100V 55A TO262 Infineon Technologies |
7,195 | 0.00 |
|
Datasheet |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 55A (Tc) | 4V, 10V | 26mOhm @ 29A, 10V | 2V @ 250µA | 140 nC @ 5 V | ±16V | 3700 pF @ 25 V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
