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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRL2910L

Name: IRL2910L
Brand: Infineon Technologies
SKU: IRL2910L
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRL2910L

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IRL2910L.pdf

Description:: MOSFET N-CH 100V 55A TO262

Quantity:: RFQ Add To RFQ list

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Inventory:7,195

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Product details

Overview

IRL2910L from Infineon Technologies (formerly International Rectifier) is a logic-level N-channel enhancement-mode Power MOSFET in TO-262 (I²PAK) through-hole package, rated for 100V V_DSS, 55A I_D @ T_C = 25°C, and 0.026Ω R_DS(on) @ V_GS = 10V. It delivers ultra-low on-resistance, fast switching, and full avalanche rating for high-efficiency DC-DC converters and motor drive half-bridges.

For engineers reviewing the IRL2910L datasheet, IRL2910L pinout, IRL2910L application, or IRL2910L equivalent, this device is selected for high-current, logic-level gate-driven power switching where thermal robustness, pulsed current capability (190A), and body diode recovery performance (t_rr = 240–350 ns) are critical design constraints.

Technical Context

This fifth-generation HEXFET® uses advanced silicon processing to minimize R_DS(on) per die area while maintaining rugged unclamped inductive switching capability. Its gate threshold voltage (1.0–2.0V) ensures reliable turn-on with 3.3V/5V microcontroller outputs, and its low Q_gd/Q_gs ratio (81/20 nC) supports clean, controllable hard-switching transitions.

The device features fully rated single-pulse avalanche energy (520 mJ), dynamic dv/dt immunity (5.0 V/ns), and a thermally optimized TO-262 package with 0.75°C/W junction-to-case resistance - enabling stable operation up to 175°C junction temperature in conduction-limited industrial loads.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Maximum blocking voltage before avalanche onset; sets upper limit for bus voltage in buck converters and H-bridge motor drivers.
R_DS(on) @ V_GS = 10V	0.026 Ω - Confirmed static on-resistance at standard gate drive; determines conduction loss (P_cond ≈ I² × 0.026) at 29A DC load.
I_D @ T_C = 25°C	55 A - Continuous drain current under ideal heatsink conditions; defines maximum steady-state power delivery capacity.
E_AS	520 mJ - Single-pulse avalanche energy rating; enables safe operation during inductive turn-off transients without external snubbers.
t_rr	240–350 ns - Body diode reverse recovery time; directly impacts switching loss and EMI in synchronous rectification and freewheeling paths.
Q_g	140 nC - Total gate charge required for full enhancement; determines driver strength requirement and switching speed trade-off.
dv/dt Rating	5.0 V/ns - Peak diode recovery dv/dt immunity; prevents spurious turn-on during high-slew-rate commutation events.

Pinout & Package

IRL2910L uses the TO-262 (I²PAK) through-hole package - a thermally enhanced variant of TO-220 with isolated mounting tab and reduced profile for low-height PCB assemblies. The package provides mechanical stability, direct heatsink interface, and 0.75°C/W junction-to-case thermal resistance.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path from source to load	Electrically connected to metal tab; must be electrically isolated from heatsink unless circuit requires common-drain topology.
Source	Reference node for gate drive and current return	Low-inductance connection point for sense resistor placement and gate driver ground reference.
Gate	Control terminal for channel modulation	High-impedance input requiring <20 nC charge; sensitive to ringing - needs local RC damping and short trace routing.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 4.0V (R_DS(on) = 0.040Ω), enabling direct interface with 3.3V/5V MCUs without level-shifting.
Ultra-low R_DS(on)	0.026Ω @ 10V ensures <40W conduction loss at 55A - critical for high-efficiency 12–48V industrial power stages.
Full avalanche rating	520 mJ single-pulse and 20 mJ repetitive avalanche energy allow reliable operation in unclamped inductive switching without derating.
Fast body diode	240–350 ns t_rr and 1.3V V_SD at 29A support efficient freewheeling in synchronous buck and half-bridge topologies.
Thermal robustness	Rated for −55°C to +175°C operation with 1.3 W/°C linear derating above 25°C case temperature - suitable for sealed enclosures.

Applications

Brushless DC Motor Drive

Industrial DC-DC Converter

Use Scenario: Half-bridge phase-leg switching in 24–48V BLDC inverters driving fans, pumps, or compressors.

IC Role / Device Role / Timing Role: High-side and low-side power switch with logic-level gate compatibility and fast body diode recovery for PWM commutation.

Use Value: Enables >96% efficiency at 30A continuous due to 0.026Ω R_DS(on) and reduces EMI via controlled dv/dt (5.0 V/ns) and low Q_gd.

Use Scenario: Primary-side synchronous rectifier or secondary-side switch in isolated 400W telecom or PLC power supplies.

IC Role / Device Role / Timing Role: High-current, low-loss switching element in active clamp forward or LLC resonant converter output stage.

Use Value: Supports 55A continuous conduction mode operation with minimal thermal rise (0.75°C/W θ_JC) and withstands 190A pulsed loads during transient surges.

Uninterruptible Power Supply (UPS)

Automotive Auxiliary Power Module

Use Scenario: Bidirectional battery isolation and inverter switching in 12V/24V line-interactive UPS systems.

IC Role / Device Role / Timing Role: Avalanche-rated power switch handling regenerative energy and line transients during AC/DC switchover.

Use Value: Eliminates need for external avalanche protection with 520 mJ E_AS, reducing BOM count and improving reliability under grid fault conditions.

Use Scenario: Load dump protection and high-side switching in 12V automotive auxiliary modules (e.g., seat control, HVAC actuators).

IC Role / Device Role / Timing Role: Logic-level controlled high-side switch with integrated avalanche ruggedness and thermal margin for under-hood environments.

Use Value: Operates reliably at 175°C junction temperature and withstands ISO 7637-2 pulse 5a (load dump) without failure due to full avalanche rating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF2807PbF	V_DSS = 75V, R_DS(on) = 0.018Ω @ 10V, TO-220 package, lower voltage rating	Not suitable for 100V bus designs; better for 48V systems where lower R_DS(on) improves efficiency	Select when system bus voltage ≤ 60V and thermal budget allows TO-220 mounting.
STP55NF06L	V_DSS = 60V, R_DS(on) = 0.014Ω @ 10V, logic-level, TO-220, no avalanche rating specified	Lacks documented avalanche capability; requires external clamping in inductive switching	Prefer only in non-inductive or snubber-protected low-voltage (<45V) applications with strict R_DS(on) targets.

Compared with IRL2910L, IRF2807PbF trades voltage headroom for lower conduction loss in sub-60V systems, while STP55NF06L offers superior R_DS(on) but omits avalanche ruggedness - making IRL2910L the only choice for unclamped 100V inductive switching with logic-level drive.

Availability

IRL2910L is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, and automotive auxiliary power modules requiring stable component supply, long-term lifecycle support, and traceable lead-free sourcing.

Supply support for IRL2910L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon-based power devices and system-level solutions.

The IRL2910L belongs to Infineon's legacy HEXFET® logic-level Power MOSFET product line, engineered for high-current, high-reliability switching in industrial and transportation applications where avalanche tolerance and thermal resilience are mandatory.

FAQ

What is the maximum continuous drain current for IRL2910L at 100°C case temperature?

The maximum continuous drain current is 39 A at T_C = 100°C and V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This reflects thermal derating due to reduced channel conductivity and increased R_DS(on) at elevated temperatures - designers must verify heatsink design meets 1.3 W/°C linear derating slope beyond 25°C.

Does IRL2910L require a gate resistor for safe operation?

Yes - a gate resistor (typically 10–47 Ω) is required to dampen ringing caused by gate loop inductance and prevent oscillation or false triggering. With 140 nC total gate charge and fast Miller plateau transition, uncontrolled gate drive can exceed dV/dt limits and induce shoot-through in bridge configurations.

Can IRL2910L be used in synchronous rectification applications?

Yes - its fast body diode (t_rr = 240–350 ns) and low forward voltage (V_SD = 1.3 V at 29 A) make it suitable for synchronous rectification in DC-DC converters up to ~100 kHz. However, optimal performance requires precise timing control to avoid cross-conduction, especially given its 81 nC Q_gd and 20 nC Q_gs ratio.

Is the TO-262 package of IRL2910L electrically isolated?

No - the drain is internally connected to the metal tab, which is electrically active. For isolation, the tab must be mounted to a heatsink using an insulating pad or shoulder washer. PCB layout must maintain clearance between the tab and any grounded copper pour, as confirmed by the package outline and thermal test conditions in AN-994.

IRL2910L Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 55A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 10V

Rds On (Max) @ Id, Vgs:: 26mOhm @ 29A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 140 nC @ 5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 3700 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 200W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262

IRL2910L FAQ

1.How can I place an order for IRL2910L through Aetrix?

Please submit a Request for Quotation (RFQ) for IRL2910L on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRL2910L reliable?

The price and inventory of IRL2910L are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL2910L is usually 5 days.

3.What payment methods are accepted for IRL2910L?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL2910L transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRL2910L?

IRL2910L orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRL2910L order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRL2910L?

For technical support, including IRL2910L datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL2910L requirements.

6.How does Aetrix verify that IRL2910L is sourced from the original manufacturer or authorized distributors?

All IRL2910L products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL2910L meets industry standards.

7.What is the process for return or replacement of IRL2910L?

All IRL2910L units undergo pre-shipment inspection (PSI). If there is an issue with IRL2910L, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRL2910L part is unused and in its original packaging.

Return procedure for IRL2910L:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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