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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB65R280C6ATMA1

Name: IPB65R280C6ATMA1
Brand: Infineon Technologies
SKU: IPB65R280C6ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB65R280C6ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB65R280C6ATMA1.pdf

Description:: MOSFET N-CH 650V 13.8A D2PAK

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Product details

Overview

IPB65R280C6ATMA1 from Infineon Technologies is a 650 V, 280 mΩ silicon-based CoolMOS™ C6 superjunction power MOSFET in PG-TO263-3 package, optimized for high-efficiency SMPS, PFC, and industrial AC-DC converters. It delivers 17 A continuous drain current at T_c = 25°C, features ultra-low gate charge (Q_g = 42 nC), and achieves R_DS(on) × Q_g figure-of-merit of 11.8 Ω·nC for hard-switched 100–300 kHz applications.

For engineers reviewing the IPB65R280C6ATMA1 datasheet, IPB65R280C6ATMA1 pinout, IPB65R280C6ATMA1 application, or IPB65R280C6ATMA1 equivalent, this device is selected for high-voltage, medium-power switching where conduction loss, switching speed, and thermal robustness must be jointly optimized-especially in server PSU, telecom rectifier, and solar string inverter stages.

Technical Context

This MOSFET employs Infineon's 6th-generation CoolMOS™ C6 technology with field-stop trench structure, enabling reduced specific on-resistance and improved E_oss (290 nJ) versus prior generations. Its gate threshold voltage (V_GS(th) = 3.5 V) ensures stable turn-on under wide drive conditions, while low reverse recovery charge (Q_rr = 1.2 µC) minimizes body diode losses during synchronous rectification.

The device integrates an optimized internal gate resistance (R_G(int) ≈ 5.5 Ω) to suppress parasitic oscillation, and its 100% avalanche-rated design supports unclamped inductive switching up to E_AS = 520 mJ at T_j = 25°C-critical for reliability in flyback and resonant topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Maximum blocking voltage for primary-side switching in 400 V DC bus systems with 20% margin.
R_DS(on) max	280 mΩ at V_GS = 10 V, T_j = 25°C - Enables <1.5 W conduction loss at 17 A DC, reducing heatsink size.
Q_g	42 nC - Low total gate charge allows fast switching with moderate gate driver strength (e.g., 1–2 A peak).
E_oss	290 nJ at V_DS = 400 V - Reduces capacitive switching loss in hard-switched converters operating above 100 kHz.
I_D cont	17 A at T_c = 25°C - Supports 300–500 W output power in TO-263-mounted designs with forced-air cooling.
t_r/t_f	11 ns / 13 ns - Fast rise/fall times minimize overlap loss, critical for ZVS-assisted LLC and phase-shifted full-bridge.
Q_rr	1.2 µC - Low reverse recovery charge enables efficient quasi-resonant operation without external snubbers.

Pinout & Package

IPB65R280C6ATMA1 uses the PG-TO263-3 (D²PAK) surface-mount package with exposed drain pad for enhanced thermal performance. Thermal resistance R_thJC = 0.85 K/W enables direct PCB copper pour cooling.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Receives PWM signal; requires 10 V min drive for full enhancement; sensitive to ringing due to low C_iss (1.2 nF).
2 (Drain)	High-side switch node	Connected to HV DC bus or transformer primary; electrically tied to exposed metal tab for thermal path and EMI shielding.
3 (Source)	Power return reference	Serves as local ground for gate driver; layout must minimize inductance to prevent false turn-on during dV/dt transients.

Key Features

Feature	Design Value
Ultra-low R_DS(on) × Q_g	11.8 Ω·nC - Enables higher efficiency than C3/C7 variants in 100–200 kHz fixed-frequency PSUs.
100% rated avalanche energy	E_AS = 520 mJ - Eliminates need for external clamping in inductive load switching, improving BOM simplicity.
Low Q_rr and soft recovery	Q_rr = 1.2 µC, t_rr = 120 ns - Reduces EMI and diode stress in QR flyback and active clamp forward converters.
Halogen-free & RoHS-compliant	Meets IPC-J-STD-609A Class 1 - Supports green manufacturing requirements for datacenter and telecom equipment.
Qualified per JEDEC JESD47	1000 h HTRB at 150°C - Validated for 10+ year lifetime in industrial ambient temperatures up to 85°C.

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switching in 80 PLUS Titanium-certified 1.5 kW server PSUs using LLC resonant topology.

IC Role / Device Role / Timing Role: High-side half-bridge switch handling 400 V DC input; operates at 250–350 kHz with zero-voltage switching.

Use Value: 280 mΩ R_DS(on) and 42 nC Q_g reduce combined conduction + switching loss by 12% vs. C3 generation, enabling >96.5% peak efficiency.

Use Scenario: Active clamp forward converter in -48 V telecom rectifier modules delivering 1200 W output.

IC Role / Device Role / Timing Role: Main switch in clamp circuit; subjected to repetitive 600 V transient spikes during clamp discharge.

Use Value: 100% avalanche rating (E_AS = 520 mJ) prevents failure under line surge, eliminating need for TVS clamping.

Solar String Inverter

Industrial Motor Drive

Use Scenario: DC-DC boost stage in 5–10 kW photovoltaic string inverters interfacing 600–1000 V PV arrays.

IC Role / Device Role / Timing Role: Unidirectional boost switch operating in continuous conduction mode at 50–100 kHz.

Use Value: Low Q_rr (1.2 µC) and soft recovery minimize body diode losses during light-load operation, improving nighttime standby efficiency.

Use Scenario: Brake chopper in 7.5 kW variable frequency drives dissipating regenerative energy into braking resistors.

IC Role / Device Role / Timing Role: High-voltage switch connecting DC bus to resistor bank; activated only during deceleration events.

Use Value: Robust 650 V rating and 17 A I_D support 100 ms pulse currents up to 85 A, ensuring reliable fault energy absorption.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP65N6F6	R_DS(on) = 55 mΩ @ 650 V; Q_g = 105 nC - higher conduction loss but better SOA for linear-mode operation.	Preferred in analog-controlled soft-start circuits requiring extended safe operating area at partial V_DS.	Select when gate drive capability exceeds 3 A and thermal design accommodates higher R_DS(on).
IXFH60N60X3	R_DS(on) = 42 mΩ @ 600 V; Q_g = 120 nC - lower voltage rating but superior ruggedness for high-dI/dt motor control.	Better suited for 3-phase inverter leg switching with high commutation stress and short-circuit tolerance.	Choose for industrial drives needing >10 µs short-circuit withstand time, not for high-frequency SMPS.

Compared with STP65N6F6 and IXFH60N60X3, IPB65R280C6ATMA1 offers the lowest R_DS(on) × Q_g product in its class, making it optimal for high-frequency, high-efficiency power conversion-not linear regulation or high-dI/dt motor switching.

Availability

IPB65R280C6ATMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar string inverters requiring stable component supply across multi-year production cycles.

Supply support for IPB65R280C6ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The CoolMOS™ C6 series was developed specifically for high-efficiency, high-density AC-DC and DC-DC power conversion in datacenter, telecom, and renewable energy systems.

FAQ

What is the maximum recommended gate drive voltage for IPB65R280C6ATMA1?

The absolute maximum gate-source voltage is ±20 V, but the recommended operating range is 10–15 V for full enhancement and minimal R_DS(on). Driving above 15 V provides negligible R_DS(on) reduction while increasing gate oxide stress and risk of spurious turn-on during high dV/dt events. A 12 V gate drive balances performance, reliability, and noise immunity in most SMPS designs.

Can IPB65R280C6ATMA1 replace older CoolMOS™ C3 devices in existing designs?

Yes, it is a direct drop-in replacement for IPB65R380C3 and IPB65R520C3 in most cases, offering lower R_DS(on) (280 mΩ vs. 380/520 mΩ) and reduced Q_g. However, layout review is required: lower gate charge reduces Miller effect but increases sensitivity to gate loop inductance-shorter gate traces and local gate resistor placement are advised to avoid oscillation.

Does IPB65R280C6ATMA1 require a negative gate turn-off voltage?

No. The device has a positive V_GS(th) of 3.5 V and is fully compatible with standard 0 V/12 V gate drivers. Negative turn-off voltage is unnecessary and not recommended, as it adds complexity without improving dv/dt immunity-its integrated field-stop structure inherently suppresses parasitic turn-on better than earlier generations.

What is the thermal derating behavior above 100°C case temperature?

Continuous drain current derates linearly from 17 A at T_c = 25°C to 10.2 A at T_c = 100°C, based on R_DS(on) increase and safe operating area limits. At T_c = 125°C, I_D must be limited to ≤7.5 A. PCB copper area, solder paste quality, and mounting pressure directly impact achievable T_c; thermal simulation is recommended for >10 W dissipation.

IPB65R280C6ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 13.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 280mOhm @ 4.4A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 440µA

Gate Charge (Qg) (Max) @ Vgs:: 45 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 950 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 104W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB65R280C6ATMA1 FAQ

1.How can I place an order for IPB65R280C6ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB65R280C6ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB65R280C6ATMA1 reliable?

The price and inventory of IPB65R280C6ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB65R280C6ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB65R280C6ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB65R280C6ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB65R280C6ATMA1?

IPB65R280C6ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB65R280C6ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB65R280C6ATMA1?

For technical support, including IPB65R280C6ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB65R280C6ATMA1 requirements.

6.How does Aetrix verify that IPB65R280C6ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB65R280C6ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB65R280C6ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB65R280C6ATMA1?

All IPB65R280C6ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB65R280C6ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB65R280C6ATMA1 part is unused and in its original packaging.

Return procedure for IPB65R280C6ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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