Infineon Technologies BSC016N04LSGATMA1

Overview

BSC016N04LSGATMA1 from Infineon Technologies is an N-channel logic-level OptiMOS™ 3 power MOSFET in SuperSO8 (PG-TDSON-8) package, rated for 40 V V_DS, 1.6 mΩ R_DS(on) at V_GS = 4.5 V, and 100 A continuous drain current at T_C = 25 °C. It delivers ultra-low conduction loss and fast switching for high-efficiency DC/DC converters and synchronous rectification in server VRMs and telecom power supplies.

For engineers reviewing the BSC016N04LSGATMA1 datasheet, BSC016N04LSGATMA1 pinout, BSC016N04LSGATMA1 application, or BSC016N04LSGATMA1 equivalent, key selection criteria include its 1.6 mΩ on-resistance at 4.5 V gate drive, 150 nC total gate charge, 100% avalanche-tested ruggedness, JEDEC-qualified reliability, and thermal resistance of 0.9 K/W (junction-to-case).

Technical Context

This MOSFET employs Infineon's OptiMOS™ 3 silicon process optimized for low-voltage, high-current switching. Its gate threshold voltage (1.2–2.0 V) ensures robust logic-level drive compatibility with 3.3 V and 5 V controllers, while the 113–150 nC Q_g supports efficient high-frequency operation up to 1 MHz in multiphase buck converters.

The device integrates a co-packaged body diode with 125 nC reverse recovery charge (Q_rr) and 0.8–1.2 V forward voltage (V_SD), enabling reliable synchronous FET operation without external Schottky replacement. Its 0.9 K/W R_thJC enables direct thermal coupling to PCB copper planes for high-power density designs.

Key Specifications

Pinout & Package

Package: SuperSO8 (PG-TDSON-8), surface-mount, exposed drain pad for thermal and electrical connection. Dimensions: 5.15 mm × 6.20 mm × 1.27 mm (L × W × H). Drain pad occupies bottom-side center area and must be soldered to large PCB copper pour.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with IRL1404ZPBF and STL220N4F7AG, BSC016N04LSGATMA1 offers the optimal balance of ultra-low R_DS(on), moderate Q_g, JEDEC qualification, and SuperSO8 thermal performance-making it the preferred choice for high-efficiency, high-power-density 40 V-class DC/DC conversion where both conduction and switching losses must be minimized.

Availability

BSC016N04LSGATMA1 is available at Aetrix Electronics and suitable for server VRMs, telecom DC/DC converters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for BSC016N04LSGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

BSC016N04LSGATMA1 belongs to the OptiMOS™ 3 family, engineered specifically for high-current, low-voltage power conversion in datacenter, telecom, and industrial systems where efficiency, thermal performance, and reliability are non-negotiable.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

At T_C = 100 °C, the maximum continuous drain current is 31 A with V_GS = 10 V, as specified in Table 2 of the datasheet. This derating reflects thermal limitations of the SuperSO8 package under real-world PCB cooling conditions and must be applied in thermal design calculations.

Is BSC016N04LSGATMA1 suitable for synchronous rectification in LLC resonant converters?

Yes-the device's low 1.6 mΩ R_DS(on) at 4.5 V, 125 nC Q_rr, and 0.8 V V_SD make it well-suited for secondary-side synchronous rectification in 40 V-class LLC converters. Its fast body diode recovery and low gate charge reduce timing-critical dead-time requirements and improve light-load efficiency.

Does this MOSFET require a gate resistor for stability in high-speed switching?

A gate resistor (typically 1–5 Ω) is recommended to dampen ringing caused by parasitic inductance in the gate loop. The datasheet specifies switching times (e.g., t_r = 7.6 ns) measured with R_G = 1.6 Ω; omitting it risks overshoot, shoot-through, and EMI compliance failure in >300 kHz applications.

How does the exposed drain pad affect PCB layout and thermal design?

The exposed drain pad must be connected to a minimum 6 cm² copper area on the PCB's inner or bottom layer using multiple thermal vias (≥8 × 0.3 mm diameter). This achieves the specified 0.9 K/W R_thJC; insufficient copper or via count raises junction temperature and triggers premature thermal shutdown or parametric drift.