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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF1405STRR

Name: IRF1405STRR
Brand: Infineon Technologies
SKU: IRF1405STRR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF1405STRR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF1405STRR.pdf

Description:: MOSFET N-CH 55V 131A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF1405STRR from Infineon Technologies is a 55 V, 131 A N-channel D2Pak (TO-263) HEXFET® Power MOSFET with 4.6 mΩ typical R_DS(on) at V_GS = 10 V, 175 °C maximum junction temperature, and 590 mJ single-pulse avalanche energy - designed for high-current DC motor drives, UPS inverters, and DC-DC synchronous rectification.

For engineers reviewing the IRF1405STRR datasheet, IRF1405STRR pinout, IRF1405STRR application, or IRF1405STRR equivalent, key selection criteria include its 5.3 mΩ max R_DS(on), 680 A pulsed drain current capability, fast 190 ns rise time, and robust 175 °C thermal rating in surface-mount D2Pak packaging.

Technical Context

This N-channel enhancement-mode MOSFET uses Infineon's stripe planar HEXFET process to achieve ultra-low on-resistance per die area and high current density. Its gate threshold voltage (2.0–4.0 V) enables direct TTL/CMOS drive, while its 170–260 nC total gate charge supports efficient switching at moderate frequencies up to ~100 kHz in hard-switched topologies.

The device integrates an intrinsic body diode with 1.3 V forward voltage at 101 A and 88–130 ns reverse recovery time, enabling use in freewheeling and synchronous rectifier roles. Repetitive avalanche operation is permitted up to T_jmax, supported by validated E_AS curves and transient thermal impedance data.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55 V - Maximum blocking voltage in off-state; defines upper limit for DC bus in 48 V systems.
R_DS(on) (typ/max)	4.6 / 5.3 mΩ @ V_GS = 10 V, I_D = 101 A - Directly determines conduction loss and heatsink sizing in high-current paths.
I_D (25°C / 100°C)	131 / 93 A - Continuous current derating reflects thermal limits of D2Pak package on PCB.
E_AS	590 mJ - Single-pulse avalanche energy rating enables reliable unclamped inductive switching without snubbers.
Q_g (typ/max)	170 / 260 nC - Gate drive power requirement impacts driver IC selection and switching loss trade-offs.
t_r / t_f	190 / 110 ns - Fast edge rates reduce switching transition time, lowering dynamic losses in PWM applications.
R_θJC	0.75 °C/W - Junction-to-case thermal resistance enables accurate heatsink thermal design when mounted to copper plane or heatsink.

Pinout & Package

IRF1405STRR is housed in a surface-mount D2Pak (TO-263) package with three terminals: Drain (tab), Source (pins 1 & 2), and Gate (pin 3). The exposed drain pad provides low-inductance, high-current path and primary thermal interface.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current-carrying terminal, electrically connected to package backside	Must be soldered to large copper pour or heatsink for thermal and electrical performance; carries full load current.
Source (Pins 1 & 2)	Reference node for gate drive and current return path	Dual-pin layout reduces source inductance; critical for minimizing voltage spikes during fast switching.
Gate (Pin 3)	Control electrode for channel formation	High-impedance input requiring low-ESR gate resistor (1.1 Ω typical) to damp oscillation and control dV/dt.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	4.6 mΩ typ at 10 V gate drive - reduces conduction loss by >30% vs. legacy 55 V MOSFETs in 100 A applications.
175 °C rated junction temperature	Enables operation in sealed enclosures or high ambient environments without derating beyond datasheet curves.
Repetitive avalanche capability	Validated up to T_jmax per AN-1005 - eliminates need for external clamping in inductive load switching.
Fast body diode recovery	88–130 ns trr with 250–380 nC Q_rr - minimizes reverse recovery loss in synchronous rectifier and half-bridge configurations.
Low gate charge asymmetry	Q_gs/Q_gd ratio ≈ 0.7 - improves controllability during Miller plateau and reduces risk of shoot-through.

Applications

Industrial Motor Drive

Uninterruptible Power Supply (UPS)

Use Scenario: High-current H-bridge for 48 V BLDC motor control in conveyor systems and CNC axes.

IC Role / Device Role / Timing Role: Main switching element in low-side and high-side legs; handles 100+ A peak currents with <100 ns dead-time tolerance.

Use Value: Low R_DS(on) and fast switching reduce I²R losses and thermal stress, extending system MTBF in continuous-duty operation.

Use Scenario: Output stage in online double-conversion UPS delivering clean 230 VAC from 48 VDC battery bank.

IC Role / Device Role / Timing Role: Synchronous rectifier in LLC resonant converter secondary; operates at 100–200 kHz with zero-voltage switching assist.

Use Value: Body diode softness and low Q_rr minimize reverse recovery spikes, improving EMI profile and reducing snubber losses.

DC-DC Synchronous Rectifier

Automotive Starter-Solenoide Replacement

Use Scenario: 12 V to 1 V, 150 A point-of-load converter in server VRM using multiphase buck topology.

IC Role / Device Role / Timing Role: Low-side switch with gate driven by dedicated controller; duty cycle >90% in light-load CCM mode.

Use Value: 4.6 mΩ R_DS(on) cuts conduction loss below 1 W at full load, enabling compact thermal design without forced air.

Use Scenario: Solid-state replacement for mechanical starter solenoid in 24 V commercial vehicle engine cranking circuits.

IC Role / Device Role / Timing Role: High-side switch controlling 300 A inrush current to starter motor; activated for <2 s per start cycle.

Use Value: 680 A pulsed current rating and 590 mJ avalanche energy ensure robustness against load dump and inductive kickback.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP130N5F6	55 V, 130 A, R_DS(on) = 4.8 mΩ, D²PAK, lower Q_g (140 nC)	Slightly faster switching but reduced avalanche rating (E_AS = 420 mJ)	Preferred where gate drive power is constrained and inductive energy is limited.
IXTH120N50L2	500 V, 120 A, R_DS(on) = 12.5 mΩ, TO-247, higher voltage class	Not a drop-in replacement; suited for 400 V bus applications like solar inverters	Select only when system requires higher V_DSS margin and can accept higher conduction loss.

Compared with STP130N5F6 and IXTH120N50L2, IRF1405STRR delivers superior avalanche ruggedness and lower on-resistance at 55 V, making it optimal for high-reliability, high-current 48 V industrial systems where thermal and transient robustness are prioritized over minimal gate drive loss.

Availability

IRF1405STRR is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, and DC-DC synchronous rectifiers requiring stable component supply and long-term production continuity.

Supply support for IRF1405STRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRF1405STRR belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, high-current switching in industrial power conversion and motor control systems.

FAQ

Is IRF1405STRR RoHS-compliant and lead-free?

Yes. IRF1405STRR is RoHS-compliant and manufactured with lead-free terminations per JEDEC J-STD-609. The "PbF" suffix in related part numbers (e.g., IRF1405SPbF) confirms this compliance, and the STRR tape-and-reel variant meets all applicable EU and global environmental directives.

What is the recommended PCB layout for thermal performance?

For optimal thermal performance, the D2Pak drain tab must be soldered to a minimum 400 mm² copper area (2 oz Cu, ≥2 layers) with ≥8 thermal vias (0.3 mm diameter, spaced ≤2 mm apart) connecting to internal ground or power planes. Source pins require short, wide traces to minimize loop inductance.

Can IRF1405STRR be used in parallel configurations?

Yes - its positive R_DS(on) temperature coefficient enables stable current sharing. Use matched gate resistors (≤1 Ω), symmetrical layout, and individual Kelvin-source connections to ensure balanced dynamic current distribution across paralleled devices.

Does IRF1405STRR require a gate driver IC, or can it be driven directly from a microcontroller?

A dedicated gate driver IC is strongly recommended. While the 2–4 V V_GS(th) allows basic turn-on from 3.3 V or 5 V logic, the 170–260 nC gate charge demands >1 A peak current for fast switching - exceeding GPIO capabilities and risking shoot-through or excessive switching loss.

IRF1405STRR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 131A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 5.3mOhm @ 101A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 260 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5480 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 200W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF1405STRR FAQ

1.How can I place an order for IRF1405STRR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF1405STRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF1405STRR reliable?

The price and inventory of IRF1405STRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF1405STRR is usually 5 days.

3.What payment methods are accepted for IRF1405STRR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF1405STRR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF1405STRR?

IRF1405STRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF1405STRR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF1405STRR?

For technical support, including IRF1405STRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF1405STRR requirements.

6.How does Aetrix verify that IRF1405STRR is sourced from the original manufacturer or authorized distributors?

All IRF1405STRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF1405STRR meets industry standards.

7.What is the process for return or replacement of IRF1405STRR?

All IRF1405STRR units undergo pre-shipment inspection (PSI). If there is an issue with IRF1405STRR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF1405STRR part is unused and in its original packaging.

Return procedure for IRF1405STRR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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