My Inquiry
My Account
FETs, MOSFETs
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
MSC025SMA120B4NMOSFET SIC 1200 V 25 MOHM TO-247 |
30 | 0.00 |
|
- |
- | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 113A (Tc) | 18V, 20V | 31mOhm @ 40A, 20V | 5V @ 3mA | 232 nC @ 20 V | +23V, -10V | 3633 pF @ 1000 V | - | 577W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
|
|
S3M0040120NMOSFET SILICON CARBIDE SIC 1200V |
36 | 0.00 |
|
Datasheet |
- | SOT-227-4, miniBLOC | Bulk | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 65A (Tc) | 18V | 52mOhm @ 40A, 18V | 4V @ 16mA | 143 nC @ 18 V | +20V, -8V | 2844 pF @ 1000 V | - | 483W (Tc) | -55°C ~ 175°C (TJ) | - | - | Chassis Mount | SOT-227 |
|
IXTH1N300P3HVMOSFET N-CH 3000V 1A TO247HV |
8 | 0.00 |
|
Datasheet |
Polar P3™ | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 3000 V | 1A (Tc) | 10V | 50Ohm @ 500mA, 10V | 4V @ 250µA | 30.6 nC @ 10 V | ±20V | 895 pF @ 25 V | - | 195W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247HV |
|
|
AIMZHN120R020M1TXKSA1SIC_DISCRETE |
30 | 0.00 |
|
Datasheet |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 100A (Tc) | 18V, 20V | 25mOhm @ 43A, 20V | 5.1V @ 13.7mA | 82 nC @ 20 V | +23V, -5V | 2667 pF @ 800 V | - | 429W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO247-4-14 |
|
|
DMWSH120H28SM4QSIC MOSFET BVDSS: >1000V TO247-4 |
38 | 0.00 |
|
Datasheet |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 100A (Tc) | 15V | 28.5mOhm @ 50A, 15V | 3.6V @ 17.7mA | 156.3 nC @ 15 V | +19V, -8V | - | - | 429W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4 |
|
|
S2M0025120NMOSFET SILICON CARBIDE SIC 1200V |
34 | 0.00 |
|
Datasheet |
- | SOT-227-4, miniBLOC | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 104A (Tc) | 20V | 34mOhm @ 50A, 20V | 4V @ 15mA | 165 nC @ 20 V | +20V, -5V | 4054 pF @ 1000 V | - | 535W (Tc) | -55°C ~ 175°C (TJ) | - | - | Chassis Mount | SOT-227 |
|
|
TM3B0020120A1200V 20MOHM SIC MOSFET TO247-4 |
40 | 0.00 |
|
Datasheet |
- | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
S3M0016120NMOSFET SILICON CARBIDE SIC 1200V |
36 | 0.00 |
|
Datasheet |
- | SOT-227-4, miniBLOC | Bulk | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 120A (Tc) | 18V | 23mOhm @ 75A, 18V | 4V @ 30mA | 287 nC @ 18 V | +22V, -8V | 5251 pF @ 1000 V | - | 732W (Tc) | -55°C ~ 175°C (TJ) | - | - | Chassis Mount | SOT-227 |
|
|
MSC080SMA120JS15MOSFET SIC 1200V 80 MOHM 15A SOT |
15 | 0.00 |
|
Datasheet |
- | SOT-227-4, miniBLOC | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 31A (Tc) | 20V | 100mOhm @ 15A, 20V | 2.8V @ 1mA | 64 nC @ 20 V | +23V, -10V | 838 pF @ 1000 V | - | 143W (Tc) | -55°C ~ 175°C (TJ) | - | - | Chassis Mount | SOT-227 (ISOTOP®) |
|
|
TW015Z65C,S1FG3 650V SIC-MOSFET TO-247-4L 15 |
98 | 0.00 |
|
Datasheet |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 100A (Tc) | 18V | 22mOhm @ 50A, 18V | 5V @ 11.7mA | 128 nC @ 18 V | +25V, -10V | 4850 pF @ 400 V | - | 342W (Tc) | 175°C | - | - | Through Hole | TO-247-4L(X) |
|
|
MSC017SMA120BMOSFET SIC 1200V 17 MOHM TO-247 |
38 | 0.00 |
|
Datasheet |
- | TO-247-3 | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 113A (Tc) | 20V | 22mOhm @ 40A, 20V | 2.7V @ 4.5mA (Typ) | 249 nC @ 20 V | +22V, -10V | 5280 pF @ 1000 V | - | 455W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 |
|
|
IDYH50G200C5XKSA1SIC DISCRETE |
75 | 0.00 |
|
- |
- | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
FF100R12W1T7EB11BPSA1EASY STANDARD |
24 | 0.00 |
|
Datasheet |
- | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IXTX6N200P3HVMOSFET N-CH 2000V 6A TO247PLUSHV |
15 | 0.00 |
|
Datasheet |
Polar P3™ | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 2000 V | 6A (Tc) | 10V | 4Ohm @ 3A, 10V | 5V @ 250µA | 143 nC @ 10 V | ±20V | 3700 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247PLUS-HV |
|
APT50M50JVRMOSFET N-CH 500V 77A ISOTOP |
10 | 0.00 |
|
Datasheet |
POWER MOS V® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 77A (Tc) | - | 50mOhm @ 500mA, 10V | 4V @ 5mA | 1000 nC @ 10 V | - | 19600 pF @ 25 V | - | - | - | - | - | Chassis Mount | ISOTOP® |
|
APT20M11JVRMOSFET N-CH 200V 175A ISOTOP |
6 | 0.00 |
|
Datasheet |
POWER MOS V® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 175A (Tc) | 10V | 11mOhm @ 500mA, 10V | 4V @ 5mA | 180 nC @ 10 V | ±30V | 21600 pF @ 25 V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
|
|
APT10025JVRMOSFET N-CH 1000V 34A ISOTOP |
10 | 0.00 |
|
Datasheet |
POWER MOS V® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 34A (Tc) | - | 250mOhm @ 500mA, 10V | 4V @ 5mA | 990 nC @ 10 V | - | 18000 pF @ 25 V | - | - | - | - | - | Chassis Mount | ISOTOP® |
|
|
APT8011JLLMOSFET N-CH 800V 51A ISOTOP |
8 | 0.00 |
|
Datasheet |
POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 51A (Tc) | - | 110mOhm @ 25.5A, 10V | 5V @ 5mA | 650 nC @ 10 V | - | 9480 pF @ 25 V | - | - | - | - | - | Chassis Mount | ISOTOP® |
|
|
APT60M60JLLMOSFET N-CH 600V 70A ISOTOP |
10 | 0.00 |
|
Datasheet |
POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 70A (Tc) | 10V | 60mOhm @ 35A, 10V | 5V @ 5mA | 289 nC @ 10 V | ±30V | 12630 pF @ 25 V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
|
|
APT8011JFLLMOSFET N-CH 800V 51A ISOTOP |
10 | 0.00 |
|
Datasheet |
POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 51A (Tc) | - | 125mOhm @ 25.5A, 10V | 5V @ 5mA | 650 nC @ 10 V | - | 9480 pF @ 25 V | - | - | - | - | - | Chassis Mount | ISOTOP® |
