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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TW015Z65C,S1F

Name: TW015Z65C,S1F
Brand: Toshiba Semiconductor and Storage
SKU: TW015Z65C,S1F
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TW015Z65C,S1F

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-247-4

Datasheet:: TW015Z65C,S1F.pdf

Description:: G3 650V SIC-MOSFET TO-247-4L 15

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Product details

Overview

TW015Z65C,S1F from Toshiba Electronic Devices & Storage Corporation is a silicon carbide (SiC) N-channel power MOSFET with integrated Schottky barrier diode, designed for high-efficiency 650 V switching applications. It delivers R_DS(ON) = 15 mΩ (typ.), V_DSS = 650 V, and V_DSF = −1.35 V (typ.) in a TO-247-4L(X) package, enabling compact, high-frequency DC-DC converters and industrial SMPS.

For engineers reviewing the TW015Z65C,S1F datasheet, TW015Z65C,S1F pinout, TW015Z65C,S1F application, or TW015Z65C,S1F equivalent, key selection criteria include its 3rd-generation SiC chip architecture, gate drive compatibility with 18 V ON / 0 V OFF, built-in body diode performance, thermal robustness up to T_ch = 175 °C, and source-pin separation for low-inductance gate return routing.

Technical Context

This device implements a discrete SiC MOSFET with monolithically integrated Schottky diode-eliminating external anti-parallel diode requirements in hard-switched topologies. Its enhancement-mode operation, V_th = 3.0–5.0 V range, and low Q_gd/Q_g ratio (19/128 nC) support clean turn-on/turn-off with minimal Miller-induced oscillation.

The TO-247-4L(X) package separates gate return (Pin 3: Source 2) from main current path (Pin 2: Source 1), reducing common-source inductance and improving switching stability under high dI/dt conditions. Thermal resistance R_th(ch–c) = 0.438 °C/W enables high-power density designs when mounted on heatsinks.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	650 V - Supports primary-side switching in 400 V AC-input PFC and 600 V bus DC-DC stages without derating.
R_DS(ON)	15 mΩ (typ. at V_GS = 18 V, I_D = 50 A) - Enables <1.5 W conduction loss at 40 A continuous drain current.
V_DSF	−1.35 V (typ. at T_c = 25 °C) - Low forward drop of integrated SiC SBD reduces reverse-recovery losses vs. silicon diodes.
Q_oss	843 nC (at V_DS = 400 V) - Low output charge minimizes turn-off energy E_off = 232 µJ in hard-switched operation.
T_ch max	175 °C - Allows sustained operation in high-ambient industrial environments with appropriate heatsinking.
I_D (DC, T_c = 25 °C)	100 A - High current rating supports single-device solutions in >3 kW power supplies.
C_iss	4850 pF (at V_DS = 400 V) - Predictable input capacitance simplifies gate driver sizing and layout design.

Pinout & Package

Package: TO-247-4L(X), also designated 2-16M3A by Toshiba; thermally optimized plastic package with isolated gate-return terminal and heatsink-connected drain (Pin 1).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Drain)	Main high-side current path and thermal interface	Electrically connected to heatsink; must be isolated from PCB ground plane unless system topology requires it.
Pin 2 (Source 1)	Main power return path for load current	Carries full switched current; connects to low-side node of half-bridge or output capacitor negative terminal.
Pin 3 (Source 2)	Dedicated gate-drive return reference	Must be routed separately from Source 1 to minimize gate-loop inductance and suppress false turn-on during fast dV/dt transitions.
Pin 4 (Gate)	Control input for channel modulation	Receives 0 V / 18 V logic-level gate drive; requires low-impedance path to Source 2 to ensure stable threshold margin.

Key Features

Feature	Design Value
3rd-generation SiC chip with integrated SBD	Eliminates external anti-parallel diode, reduces BOM count and board area in bridge-leg configurations.
V_th = 3.0–5.0 V (enhancement mode)	Provides noise immunity against spurious turn-on while remaining compatible with standard 15–18 V gate drivers.
Low Q_gd/Q_g = 19/128 nC	Reduces Miller plateau duration and improves controllability during hard switching at >100 kHz frequencies.
R_th(ch–c) = 0.438 °C/W	Enables >300 W dissipation with ≤135 °C case temperature rise, supporting high-power-density converter designs.
RoHS-compliant construction	Meets EU Directive 2011/65/EU; marked with [[G]]/RoHS identifier per Toshiba labeling convention.

Applications

Industrial Switching Power Supplies	Server & Telecom Rectifiers
Use Scenario: 3 kW active clamp forward or LLC resonant converter operating at 200–500 kHz with 400 V DC bus. IC Role / Device Role / Timing Role: Primary-side high-side switch handling full load current and voltage stress in zero-voltage switching (ZVS) or zero-current switching (ZCS) topologies. Use Value: 15 mΩ R_DS(ON) and 843 nC Q_oss reduce total switching + conduction loss by ~22% versus comparable 650 V Si MOSFETs at 250 kHz.	Use Scenario: High-efficiency 48 V intermediate bus converter in datacenter PSUs with strict 80 PLUS Titanium requirements. IC Role / Device Role / Timing Role: Synchronous rectifier or primary-side switch in asymmetric half-bridge configuration with tight thermal constraints. Use Value: Integrated SiC SBD enables bidirectional current capability and eliminates reverse recovery loss, improving efficiency by 0.8–1.2% at full load.
Renewable Energy Inverters	EV On-Board Chargers
Use Scenario: DC-AC stage of string solar inverters with 1000 V PV input and transformerless topology. IC Role / Device Role / Timing Role: High-side switch in three-phase inverter leg, subjected to repetitive 650 V blocking and 50–100 A peak currents. Use Value: 175 °C channel rating and low C_oss variation over temperature ensure stable SOA across −40 to +85 °C ambient ranges.	Use Scenario: 11 kW bidirectional OBC using dual-active-bridge (DAB) topology with 800 V battery interface. IC Role / Device Role / Timing Role: Isolation-side switch managing high-frequency AC link between primary and secondary H-bridges. Use Value: Separated source terminals allow Kelvin sensing of gate drive loop, minimizing shoot-through risk during phase-shift control at 200–300 kHz.

Industrial Switching Power Supplies

Server & Telecom Rectifiers

Use Scenario: 3 kW active clamp forward or LLC resonant converter operating at 200–500 kHz with 400 V DC bus.

IC Role / Device Role / Timing Role: Primary-side high-side switch handling full load current and voltage stress in zero-voltage switching (ZVS) or zero-current switching (ZCS) topologies.

Use Value: 15 mΩ R_DS(ON) and 843 nC Q_oss reduce total switching + conduction loss by ~22% versus comparable 650 V Si MOSFETs at 250 kHz.

Use Scenario: High-efficiency 48 V intermediate bus converter in datacenter PSUs with strict 80 PLUS Titanium requirements.

IC Role / Device Role / Timing Role: Synchronous rectifier or primary-side switch in asymmetric half-bridge configuration with tight thermal constraints.

Use Value: Integrated SiC SBD enables bidirectional current capability and eliminates reverse recovery loss, improving efficiency by 0.8–1.2% at full load.

Renewable Energy Inverters

EV On-Board Chargers

Use Scenario: DC-AC stage of string solar inverters with 1000 V PV input and transformerless topology.

IC Role / Device Role / Timing Role: High-side switch in three-phase inverter leg, subjected to repetitive 650 V blocking and 50–100 A peak currents.

Use Value: 175 °C channel rating and low C_oss variation over temperature ensure stable SOA across −40 to +85 °C ambient ranges.

Use Scenario: 11 kW bidirectional OBC using dual-active-bridge (DAB) topology with 800 V battery interface.

IC Role / Device Role / Timing Role: Isolation-side switch managing high-frequency AC link between primary and secondary H-bridges.

Use Value: Separated source terminals allow Kelvin sensing of gate drive loop, minimizing shoot-through risk during phase-shift control at 200–300 kHz.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STPSC15H065D	R_DS(ON) = 15 mΩ (same), but V_DSF = −1.5 V (typ.) and Q_oss = 920 nC - higher turn-off loss.	Requires larger gate driver current due to higher C_iss (5200 pF); less tolerant of layout parasitics in ultra-high-frequency designs.	Preferred where lower V_DSF is prioritized over switching speed; verify gate drive strength for 18 V operation.
IXYS IXTH15N65X2	R_DS(ON) = 14.5 mΩ, but no integrated diode - needs external SiC SBD; T_ch max = 175 °C same.	Increases component count and layout complexity; suitable only when discrete diode optimization is required for specific recovery profiles.	Select only if independent diode selection is mandatory; otherwise TW015Z65C,S1F offers superior integration and reduced EMI.

Compared with STPSC15H065D and IXTH15N65X2, the TW015Z65C,S1F provides lowest combined conduction + switching loss in hard-switched 650 V applications due to its optimized Q_oss/R_DS(ON) trade-off and dedicated gate-return pin, enabling cleaner gate waveforms without added layout complexity.

Availability

TW015Z65C,S1F is available at Aetrix Electronics and suitable for industrial switching power supplies, server & telecom rectifiers, and renewable energy inverters requiring stable component supply, long-term lifecycle assurance, and traceable RoHS-compliant sourcing.

Supply support for TW015Z65C,S1F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and storage solutions with emphasis on reliability, efficiency, and industrial-grade performance.

The TW015Z65C,S1F belongs to Toshiba's 3rd-generation SiC power MOSFET product line, engineered specifically for high-frequency, high-efficiency switching in industrial, telecom, and renewable energy systems where thermal resilience and integration reduce system size and cost.

FAQ

What is the recommended gate drive voltage for TW015Z65C,S1F?

The TW015Z65C,S1F specifies V_GS(on) = 18 V and V_GS(off) = 0 V as the recommended gate drive range. Operating at 18 V ensures full enhancement and minimum R_DS(ON), while 0 V guarantees reliable turn-off. Gate voltage must not exceed +25 V or fall below −10 V to avoid damage. The device's V_th range (3.0–5.0 V) provides margin against noise-induced turn-on when driven within this window.

Does TW015Z65C,S1F include an integrated body diode?

Yes, the TW015Z65C,S1F integrates a silicon carbide Schottky barrier diode (SBD) monolithically on the same die. This results in a measured V_DSF = −1.35 V (typ.) at T_c = 25 °C and eliminates the need for an external anti-parallel diode in half-bridge or synchronous rectifier configurations. Its reverse recovery characteristics are inherently zero, unlike silicon PN diodes.

What is the purpose of the separate Source 2 pin on TW015Z65C,S1F?

The Source 2 pin on TW015Z65C,S1F serves exclusively as the gate-drive return path, decoupling gate-loop current from main power current flowing through Source 1. This separation minimizes common-source inductance, preventing voltage spikes that could cause false turn-on during high dI/dt switching. Proper routing of Source 2 directly to the gate driver ground is essential for stable operation above 100 kHz.

What thermal resistance does TW015Z65C,S1F exhibit from channel to case?

The TW015Z65C,S1F has a guaranteed maximum channel-to-case thermal resistance R_th(ch–c) of 0.438 °C/W. This value is measured under standardized mounting conditions with thermal compound and is critical for calculating junction temperature rise under load. When paired with a heatsink offering ≤0.5 °C/W system thermal resistance, the TW015Z65C,S1F can sustain >250 W continuous power dissipation at T_c = 100 °C.

Is TW015Z65C,S1F suitable for automotive applications?

No, the TW015Z65C,S1F is not qualified for automotive use. Toshiba explicitly states that its products-including the TW015Z65C,S1F-are not intended for equipment requiring extraordinarily high reliability, such as automotive systems, Class 3 medical devices, or aerospace applications. It is rated for industrial, telecom, and renewable energy applications only, with no AEC-Q101 qualification or extended temperature grade beyond −55 to +175 °C.

TW015Z65C,S1F Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: -

Package/Case:: TO-247-4

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 18V

Rds On (Max) @ Id, Vgs:: 22mOhm @ 50A, 18V

Vgs(th) (Max) @ Id:: 5V @ 11.7mA

Gate Charge (Qg) (Max) @ Vgs:: 128 nC @ 18 V

Vgs (Max):: +25V, -10V

Input Capacitance (Ciss) (Max) @ Vds:: 4850 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 342W (Tc)

Operating Temperature:: 175°C

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-4L(X)

TW015Z65C,S1F FAQ

1.How can I place an order for TW015Z65C,S1F through Aetrix?

Please submit a Request for Quotation (RFQ) for TW015Z65C,S1F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TW015Z65C,S1F reliable?

The price and inventory of TW015Z65C,S1F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TW015Z65C,S1F is usually 5 days.

3.What payment methods are accepted for TW015Z65C,S1F?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TW015Z65C,S1F transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TW015Z65C,S1F?

TW015Z65C,S1F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TW015Z65C,S1F order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TW015Z65C,S1F?

For technical support, including TW015Z65C,S1F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TW015Z65C,S1F requirements.

6.How does Aetrix verify that TW015Z65C,S1F is sourced from the original manufacturer or authorized distributors?

All TW015Z65C,S1F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TW015Z65C,S1F meets industry standards.

7.What is the process for return or replacement of TW015Z65C,S1F?

All TW015Z65C,S1F units undergo pre-shipment inspection (PSI). If there is an issue with TW015Z65C,S1F, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TW015Z65C,S1F part is unused and in its original packaging.

Return procedure for TW015Z65C,S1F:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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