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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
TK8Q60W,S1VQ MOSFET N-CH 600V 8A IPAK Toshiba Semiconductor and Storage	72	RFQ	Datasheet	DTMOSIV	TO-251-3 Stub Leads, IPAK	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	8A (Ta)	10V	500mOhm @ 4A, 10V	3.7V @ 400µA	18.5 nC @ 10 V	±30V	570 pF @ 300 V	-	80W (Tc)	150°C (TJ)	-	-	Through Hole	IPAK
DMTH10H005LCT MOSFET N-CH 100V 140A TO220AB Diodes Incorporated	57	RFQ	Datasheet	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	140A (Tc)	10V	5mOhm @ 13A, 10V	3.5V @ 250µA	114 nC @ 10 V	±20V	3688 pF @ 50 V	-	187W (Tc)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-220AB
TK8A60W,S4VX MOSFET N-CH 600V 8A TO220SIS Toshiba Semiconductor and Storage	39	RFQ	Datasheet	DTMOSIV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	8A (Ta)	10V	500mOhm @ 4A, 10V	3.7V @ 400µA	18.5 nC @ 10 V	±30V	570 pF @ 300 V	-	30W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
IPP339N20NM6AKSA1 MOSFET Infineon Technologies	88	RFQ	Datasheet	OptiMOS™ 6	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	200 V	6.8A (Ta), 39A (Tc)	10V, 15V	31.8mOhm @ 26A, 15V	4.5V @ 52µA	24 nC @ 10 V	±20V	1600 pF @ 100 V	-	3.8W (Ta), 125W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO220-3-1
DMTH10H005SCT MOSFET N-CH 100V 140A TO220AB Diodes Incorporated	71	RFQ	Datasheet	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	140A (Tc)	10V	5mOhm @ 13A, 10V	4V @ 250µA	111.7 nC @ 10 V	±20V	8474 pF @ 50 V	-	187W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB
TK16E60W,S1VX MOSFET N-CH 600V 15.8A TO220 Toshiba Semiconductor and Storage	68	RFQ	Datasheet	DTMOSIV	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	15.8A (Ta)	10V	190mOhm @ 7.9A, 10V	3.7V @ 790µA	38 nC @ 10 V	±30V	1350 pF @ 300 V	-	130W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220
TK12E60W,S1VX MOSFET N CH 600V 11.5A TO-220 Toshiba Semiconductor and Storage	50	RFQ	Datasheet	DTMOSIV	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	11.5A (Ta)	10V	300mOhm @ 5.8A, 10V	3.7V @ 600µA	25 nC @ 10 V	±30V	890 pF @ 300 V	-	110W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220
TK12A60D(STA4,Q,M) MOSFET N-CH 600V 12A TO220SIS Toshiba Semiconductor and Storage	88	RFQ	Datasheet	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	12A (Ta)	10V	550mOhm @ 6A, 10V	4V @ 1mA	38 nC @ 10 V	±30V	1800 pF @ 25 V	-	45W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK10E80W,S1X PB-F POWER MOSFET TRANSISTOR TO- Toshiba Semiconductor and Storage	50	RFQ	Datasheet	DTMOSIV	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	9.5A (Ta)	10V	550mOhm @ 4.8A, 10V	4V @ 450µA	19 nC @ 10 V	±20V	1150 pF @ 300 V	-	130W (Tc)	150°C	-	-	Through Hole	TO-220
TK10A60W,S4VX MOSFET N-CH 600V 9.7A TO220SIS Toshiba Semiconductor and Storage	28	RFQ	Datasheet	DTMOSIV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	9.7A (Ta)	10V	380mOhm @ 4.9A, 10V	3.7V @ 500µA	20 nC @ 10 V	±30V	700 pF @ 300 V	-	30W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK10A80W,S4X MOSFET N-CH 800V 9.5A TO220SIS Toshiba Semiconductor and Storage	49	RFQ	Datasheet	DTMOSIV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	9.5A (Ta)	10V	550mOhm @ 4.8A, 10V	4V @ 450µA	19 nC @ 10 V	±20V	1150 pF @ 300 V	-	40W (Tc)	150°C	-	-	Through Hole	TO-220SIS
TK7E80W,S1X MOSFET N-CH 800V 6.5A TO220 Toshiba Semiconductor and Storage	70	RFQ	Datasheet	DTMOSIV	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	6.5A (Ta)	10V	950mOhm @ 3.3A, 10V	4V @ 280µA	13 nC @ 10 V	±20V	700 pF @ 300 V	-	110W (Tc)	150°C	-	-	Through Hole	TO-220
TK14E65W,S1X MOSFET N-CH 650V 13.7A TO220 Toshiba Semiconductor and Storage	48	RFQ	Datasheet	DTMOSIV	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	13.7A (Ta)	10V	250mOhm @ 6.9A, 10V	3.5V @ 690µA	35 nC @ 10 V	±30V	1300 pF @ 300 V	-	130W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220
TK20A60W5,S5VX MOSFET N-CH 600V 20A TO220SIS Toshiba Semiconductor and Storage	31	RFQ	Datasheet	DTMOSIV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	20A (Ta)	10V	175mOhm @ 10A, 10V	4.5V @ 1mA	55 nC @ 10 V	±30V	1800 pF @ 300 V	-	45W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK4R9E15Q5,S1X 150V UMOS10-HSD TO-220 4.9MOHM Toshiba Semiconductor and Storage	89	RFQ	Datasheet	U-MOSX-H	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	150 V	120A (Tc)	8V, 10V	4.9mOhm @ 50A, 10V	4.5V @ 2.2mA	96 nC @ 10 V	±20V	7820 pF @ 75 V	-	300W (Tc)	175°C	-	-	Through Hole	TO-220
TK18A50D(STA4,Q,M) MOSFET N-CH 500V 18A TO220SIS Toshiba Semiconductor and Storage	46	RFQ	Datasheet	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	18A (Ta)	10V	270mOhm @ 9A, 10V	4V @ 1mA	45 nC @ 10 V	±30V	2600 pF @ 25 V	-	50W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
IPB240N04S41R0ATMA1 MOSFET N-CH 40V 240A TO263-7 Infineon Technologies	43	RFQ	Datasheet	OptiMOS™	TO-263-7, D2PAK (6 Leads + Tab)	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	40 V	240A (Tc)	10V	1mOhm @ 100A, 10V	4V @ 180µA	221 nC @ 10 V	±20V	17682 pF @ 25 V	-	231W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-TO263-7-3
IPI90R500C3XKSA2 MOSFET N-CH 900V 11A TO262-3 Infineon Technologies	83	RFQ	Datasheet	CoolMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	900 V	11A (Tc)	10V	500mOhm @ 6.6A, 10V	3.5V @ 740µA	68 nC @ 10 V	±20V	1700 pF @ 100 V	-	156W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO262-3-1
TK19A45D(STA4,Q,M) MOSFET N-CH 450V 19A TO220SIS Toshiba Semiconductor and Storage	31	RFQ	Datasheet	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	450 V	19A (Ta)	10V	250mOhm @ 9.5A, 10V	4V @ 1mA	45 nC @ 10 V	±30V	2600 pF @ 25 V	-	50W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK080N60Z1,S1F 600V DTMOS6 TO-247 80MOHM Toshiba Semiconductor and Storage	30	RFQ	Datasheet	DTMOSVI	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	30A (Ta)	10V	80mOhm @ 10.3A, 10V	4V @ 1.17mA	43 nC @ 10 V	±30V	2510 pF @ 300 V	-	211W (Tc)	150°C	-	-	Through Hole	TO-247

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