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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK4R9E15Q5,S1X

Name: TK4R9E15Q5,S1X
Brand: Toshiba Semiconductor and Storage
SKU: TK4R9E15Q5,S1X
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK4R9E15Q5,S1X

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: TK4R9E15Q5,S1X.pdf

Description:: 150V UMOS10-HSD TO-220 4.9MOHM

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Product details

Overview

TK4R9E15Q5,S1X from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel U-MOS-H power MOSFET designed for high-current, high-efficiency switching applications. It delivers R_DS(ON) = 4.1 mΩ (typ.) at V_GS = 10 V, supports 120 A DC drain current, and features fast reverse recovery (t_rr = 50 ns typ.) for use in synchronous rectification stages of DC-DC converters.

For engineers reviewing the TK4R9E15Q5,S1X datasheet, TK4R9E15Q5,S1X pinout, TK4R9E15Q5,S1X application, or TK4R9E15Q5,S1X equivalent, key selection considerations include its 150 V V_DSS, low Q_SW = 26 nC (typ.), TO-220 package with heatsink-connected drain, and guaranteed single-pulse avalanche energy of 81 mJ - all critical for motor drive and voltage regulator design validation.

Technical Context

This MOSFET employs Toshiba's U-MOS-H trench-gate structure to achieve low on-resistance and minimized gate charge. Its enhancement-mode operation (V_th = 3.1–4.5 V) ensures reliable turn-on control, while the integrated body diode exhibits low Q_rr = 50 nC (typ.) and t_rr = 50 ns (typ.), enabling efficient hard-switching and synchronous rectification without external Schottky diodes.

The device is rated for 150 V drain-source breakdown voltage and operates up to T_ch = 175 °C. Thermal resistance R_th(ch-c) = 0.5 °C/W enables high-power dissipation when mounted on a heatsink, and its 480 A pulsed drain current rating supports peak-load handling in motor drive inverters and transient-heavy DC-DC topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	150 V - Withstands DC bus voltages up to 150 V in industrial and automotive auxiliary power supplies.
R_DS(ON)	4.1 mΩ (typ. at V_GS = 10 V) - Enables <1 W conduction loss at 50 A, reducing thermal load in high-current regulators.
Q_SW	26 nC (typ.) - Low switching gate charge minimizes driver power demand and improves efficiency at 100–500 kHz switching frequencies.
t_rr	50 ns (typ.) - Fast body diode recovery reduces cross-conduction losses and EMI in synchronous buck and half-bridge circuits.
E_AS	81 mJ (typ.) - Supports robust single-pulse avalanche capability during inductive load switching transients without failure.
I_D (DC)	120 A - Sustains continuous output current in high-power motor drivers and server VRMs when properly heatsinked.
R_th(ch-c)	0.5 °C/W - Allows >200 W power dissipation with ≤100 °C temperature rise from channel to case under forced cooling.

Pinout & Package

TK4R9E15Q5,S1X is housed in a standard TO-220 package (TOSHIBA designation: 2-10X1A), with the drain terminal electrically connected to the metal tab for direct heatsinking. The package weighs 1.96 g and is RoHS-compliant.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Control input requiring ~10 V for full enhancement; low C_iss = 7820 pF eases driver selection.
2	Drain (heatsink)	Main high-side or low-side current path; electrically tied to metal tab for thermal and electrical grounding to heatsink.
3	Source	Reference node for gate drive and current sensing; connects to PCB ground plane or shunt resistor in low-side configurations.

Key Features

Feature	Design Value
U-MOS-H trench structure	Enables 4.1 mΩ R_DS(ON) at 150 V rating - superior conduction efficiency vs. planar MOSFETs in same voltage class.
Low Q_rr and t_rr	50 nC / 50 ns body diode specs reduce switching loss and voltage overshoot during freewheeling in hard-switched topologies.
High avalanche ruggedness	81 mJ single-pulse E_AS allows safe operation under inductive switching stress without snubber networks.
Enhancement-mode threshold	V_th = 3.1–4.5 V ensures clean turn-on with standard 5 V or 3.3 V logic-level gate drivers when used with level-shifting.

Applications

High-Efficiency DC-DC Converters	Switching Voltage Regulators
Use Scenario: Used as primary switch or synchronous rectifier in isolated/non-isolated 48 V–12 V buck converters for telecom and datacom power supplies. IC Role / Device Role / Timing Role: Power switching element operating at 200–400 kHz with low R_DS(ON) and fast t_rr to minimize conduction and recovery losses. Use Value: Achieves >95% efficiency at 50 A output by reducing both I²R losses and diode reverse-recovery energy dissipation.	Use Scenario: Integrated into multiphase VRMs supplying CPUs/FPGAs in industrial servers and edge AI accelerators. IC Role / Device Role / Timing Role: High-current low-side switch in interleaved buck stages, driven by dedicated gate drivers with 4.7 Ω series resistance. Use Value: 120 A DC rating and 0.5 °C/W R_th(ch-c) support sustained high-current delivery without thermal throttling under burst loads.
Motor Drivers	Industrial Power Inverters
Use Scenario: Half-bridge leg in 3-phase BLDC motor controllers for HVAC compressors and industrial pumps. IC Role / Device Role / Timing Role: Low-side switching device with fast t_rr and low Q_SW, synchronized to PWM carrier for precise torque control. Use Value: 480 A pulsed IDP rating handles motor startup surges; low Q_gd = 44 nC suppresses Miller-induced shoot-through risk.	Use Scenario: Output stage switch in 150 V-class AC/DC PFC boost converters and UPS inverter modules. IC Role / Device Role / Timing Role: Main switching transistor in continuous conduction mode (CCM) PFC, stressed by high V_DS and di/dt. Use Value: 150 V V_DSS margin and 81 mJ E_AS ensure reliability against line surges and inductive kickback in grid-tied systems.

High-Efficiency DC-DC Converters

Switching Voltage Regulators

Use Scenario: Used as primary switch or synchronous rectifier in isolated/non-isolated 48 V–12 V buck converters for telecom and datacom power supplies.

IC Role / Device Role / Timing Role: Power switching element operating at 200–400 kHz with low R_DS(ON) and fast t_rr to minimize conduction and recovery losses.

Use Value: Achieves >95% efficiency at 50 A output by reducing both I²R losses and diode reverse-recovery energy dissipation.

Use Scenario: Integrated into multiphase VRMs supplying CPUs/FPGAs in industrial servers and edge AI accelerators.

IC Role / Device Role / Timing Role: High-current low-side switch in interleaved buck stages, driven by dedicated gate drivers with 4.7 Ω series resistance.

Use Value: 120 A DC rating and 0.5 °C/W R_th(ch-c) support sustained high-current delivery without thermal throttling under burst loads.

Motor Drivers

Industrial Power Inverters

Use Scenario: Half-bridge leg in 3-phase BLDC motor controllers for HVAC compressors and industrial pumps.

IC Role / Device Role / Timing Role: Low-side switching device with fast t_rr and low Q_SW, synchronized to PWM carrier for precise torque control.

Use Value: 480 A pulsed IDP rating handles motor startup surges; low Q_gd = 44 nC suppresses Miller-induced shoot-through risk.

Use Scenario: Output stage switch in 150 V-class AC/DC PFC boost converters and UPS inverter modules.

IC Role / Device Role / Timing Role: Main switching transistor in continuous conduction mode (CCM) PFC, stressed by high V_DS and di/dt.

Use Value: 150 V V_DSS margin and 81 mJ E_AS ensure reliability against line surges and inductive kickback in grid-tied systems.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP110N15F7	R_DS(ON) = 4.5 mΩ (typ., V_GS = 10 V); higher Q_g = 115 nC; TO-220FP package (isolated tab)	Lower thermal conductivity due to plastic isolation; requires additional thermal interface for heatsink mounting.	Prefer TK4R9E15Q5,S1X where direct-drain-to-heatsink conduction and lower Q_SW are critical for efficiency.
IRFP4468PBF	R_DS(ON) = 4.2 mΩ (typ., V_GS = 10 V); higher t_rr = 120 ns; legacy TrenchFET Gen 2 process	Higher body diode recovery loss limits suitability in high-frequency synchronous rectification.	TK4R9E15Q5,S1X offers 58% lower t_rr and 30% lower Q_SW, making it preferable for >200 kHz designs demanding minimal recovery loss.

Compared with STP110N15F7 and IRFP4468PBF, TK4R9E15Q5,S1X provides superior switching efficiency via lower Q_SW and t_rr, tighter V_th distribution, and a thermally optimized TO-220 variant with direct-drain heatsinking - critical for space-constrained, high-power-density industrial power stages.

Availability

TK4R9E15Q5,S1X is available at Aetrix Electronics and suitable for high-efficiency DC-DC converters, switching voltage regulators, and motor drivers requiring stable component supply and long-term production continuity.

Supply support for TK4R9E15Q5,S1X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a global semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with core expertise in silicon power MOSFETs and IGBTs.

The TK4R9E15Q5,S1X belongs to Toshiba's U-MOS-H high-efficiency power MOSFET product line, engineered specifically for high-current, high-frequency switching in industrial power conversion and motor control systems.

FAQ

What is the maximum continuous drain current rating for TK4R9E15Q5,S1X?

The TK4R9E15Q5,S1X is rated for 120 A DC drain current at T_c = 25 °C with proper heatsinking. This rating is limited by package capability (Note 2), not silicon limits. At elevated case temperatures, derating applies per the PD–Tc curve in the datasheet. For sustained 100 A operation, thermal design must maintain T_c ≤ 65 °C to avoid exceeding safe channel temperature limits.

Does TK4R9E15Q5,S1X support logic-level gate drive?

TK4R9E15Q5,S1X has an enhancement-mode threshold voltage range of 3.1–4.5 V, making it compatible with 5 V logic-level gate drivers. However, full R_DS(ON) performance (4.1 mΩ) requires V_GS ≥ 10 V. For 3.3 V systems, external level-shifting or gate boosting is recommended to ensure reliable saturation and minimize conduction loss.

What is the significance of the "Q5" suffix in TK4R9E15Q5,S1X?

The "Q5" suffix in TK4R9E15Q5,S1X denotes Toshiba's U-MOS-H generation and specific process revision - indicating optimized gate charge (Q_g = 96 nC typ.), reduced R_DS(ON), and improved body diode performance over earlier U-MOS-IV or U-MOS-V variants. It is not a package code but a process and performance identifier tied to the 150 V, 4.1 mΩ specification.

Can TK4R9E15Q5,S1X be used in avalanche mode during normal operation?

TK4R9E15Q5,S1X is characterized for single-pulse avalanche energy (E_AS = 81 mJ), intended for occasional transient protection - not repetitive avalanche operation. Continuous avalanche stresses degrade reliability. Designers must ensure SOA compliance and use snubbers or clamp circuits to avoid entering avalanche during regular switching cycles in inductive applications.

Is TK4R9E15Q5,S1X RoHS-compliant and lead-free?

Yes, TK4R9E15Q5,S1X is RoHS-compliant and lead-free, as confirmed in Toshiba's official documentation and packaging data. The TO-220 package (2-10X1A) uses lead-free matte tin plating on leads and meets JEDEC J-STD-020 moisture sensitivity level (MSL) requirements. No exemptions apply, and the device is suitable for lead-free reflow soldering processes.

TK4R9E15Q5,S1X Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: U-MOSX-H

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 8V, 10V

Rds On (Max) @ Id, Vgs:: 4.9mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 2.2mA

Gate Charge (Qg) (Max) @ Vgs:: 96 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7820 pF @ 75 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: 175°C

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

TK4R9E15Q5,S1X FAQ

1.How can I place an order for TK4R9E15Q5,S1X through Aetrix?

Please submit a Request for Quotation (RFQ) for TK4R9E15Q5,S1X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK4R9E15Q5,S1X reliable?

The price and inventory of TK4R9E15Q5,S1X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK4R9E15Q5,S1X is usually 5 days.

3.What payment methods are accepted for TK4R9E15Q5,S1X?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK4R9E15Q5,S1X transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK4R9E15Q5,S1X?

TK4R9E15Q5,S1X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK4R9E15Q5,S1X order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK4R9E15Q5,S1X?

For technical support, including TK4R9E15Q5,S1X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK4R9E15Q5,S1X requirements.

6.How does Aetrix verify that TK4R9E15Q5,S1X is sourced from the original manufacturer or authorized distributors?

All TK4R9E15Q5,S1X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK4R9E15Q5,S1X meets industry standards.

7.What is the process for return or replacement of TK4R9E15Q5,S1X?

All TK4R9E15Q5,S1X units undergo pre-shipment inspection (PSI). If there is an issue with TK4R9E15Q5,S1X, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK4R9E15Q5,S1X part is unused and in its original packaging.

Return procedure for TK4R9E15Q5,S1X:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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