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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK12E60W,S1VX

Name: TK12E60W,S1VX
Brand: Toshiba Semiconductor and Storage
SKU: TK12E60W,S1VX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK12E60W,S1VX

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: TK12E60W,S1VX.pdf

Description:: MOSFET N CH 600V 11.5A TO-220

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Product details

Overview

TK12E60W,S1VX from Toshiba is a silicon N-channel MOSFET using DTMOS™ Super Junction technology, designed as a high-voltage switching element in offline power supplies. It delivers 600 V V_DSS, 11.5 A continuous drain current, and low R_DS(ON) of 0.265 Ω (typ.) at V_GS = 10 V, enabling efficient operation in AC-DC adapters and industrial SMPS.

For engineers reviewing the TK12E60W,S1VX datasheet, TK12E60W,S1VX pinout, TK12E60W,S1VX application, or TK12E60W,S1VX equivalent, key selection criteria include avalanche ruggedness (E_AS = 140 mJ), gate threshold voltage range (2.7–3.7 V), thermal resistance (R_th(ch-c) = 1.14 °C/W), and TO-220 package compatibility with heatsink mounting.

Technical Context

This device implements Toshiba's DTMOS™ structure to achieve low on-resistance while maintaining high breakdown voltage-critical for reducing conduction losses in 600 V-class flyback and PFC stages. Its enhancement-mode operation and gate threshold centered at 3.2 V ensure reliable turn-on with standard 5 V or 10 V gate drivers.

The TK12E60W,S1VX features integrated body diode with reverse recovery time of 250 ns (typ.) and Q_rr = 2.3 µC, supporting hard-switched topologies. Its dv/dt ruggedness exceeds 50 V/ns, confirming robustness against parasitic turn-on in high-noise environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - supports universal-input (85–265 VAC) offline converters without derating
R_DS(ON)	0.265 Ω (typ.) - reduces conduction loss by ~35% vs. comparable 600 V MOSFETs
I_D (DC)	11.5 A - enables ≥150 W output in TO-220-mounted single-switch SMPS
E_AS	140 mJ - withstands single-pulse avalanche stress during overvoltage transients
V_th	2.7–3.7 V - ensures clean turn-on with logic-level or PWM controller gate drive
R_th(ch-c)	1.14 °C/W - allows direct heatsink mounting for thermal management up to 110 W dissipation
C_iss	890 pF - balances switching speed and EMI in 65–100 kHz PFC and LLC designs

Pinout & Package

Package: TO-220 (TOSHIBA designation 2-10X1A), through-hole, heatsink-compatible case (Drain connected to tab). Weight: 1.93 g (typ.).

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Control terminal requiring ≤±30 V gate-source voltage; low Q_g = 25 nC enables fast, low-loss switching
2	Drain (Heatsink)	Main high-voltage power terminal; electrically connected to metal tab for thermal conduction and electrical grounding
3	Source	Power return path and reference for gate drive; ties to primary ground in flyback/forward topologies

Key Features

Feature	Design Value
DTMOS™ Super Junction Structure	Enables 600 V rating with R_DS(ON) 30% lower than planar MOSFETs, improving efficiency in compact adapters
Enhancement-mode Gate Threshold	V_th = 2.7–3.7 V ensures predictable turn-on with industry-standard controllers (e.g., UC384x, ICE2QS03)
Integrated Body Diode with Low Q_rr	Q_rr = 2.3 µC minimizes switching loss and ringing in discontinuous conduction mode (DCM) PFC
Avalanche-Rated Operation	Guaranteed E_AS = 140 mJ eliminates need for external snubbers in cost-sensitive flyback designs
TO-220 Mechanical Robustness	Mounting torque spec of 0.6 N·m ensures reliable mechanical retention and thermal interface under thermal cycling

Applications

AC-DC Adapters	Industrial SMPS
Use Scenario: 65–120 W universal-input offline adapter for consumer electronics and IoT gateways. IC Role / Device Role / Timing Role: Primary-side switching transistor in quasi-resonant flyback topology. Use Value: Low R_DS(ON) and high E_AS enable no-snubber design, reducing BOM count and improving reliability.	Use Scenario: 150–200 W open-frame power supply for PLCs and motor drives. IC Role / Device Role / Timing Role: Main switch in active-clamp forward converter operating at 100 kHz. Use Value: 600 V rating and 11.5 A I_D support high-power density with minimal derating across line voltage variations.
PFC Boost Stages	LED Driver Power Stages
Use Scenario: Continuous-conduction-mode (CCM) boost PFC stage in commercial lighting ballasts. IC Role / Device Role / Timing Role: High-side switch handling full-line rectified input (up to 375 VDC). Use Value: Low C_iss and optimized Q_gd/Q_gs ratio improve power factor correction efficiency above 98%.	Use Scenario: Isolated LED driver for street lighting with surge immunity requirements. IC Role / Device Role / Timing Role: Primary switch in flyback-based constant-current driver with 6 kV surge protection. Use Value: Avalanche ruggedness and 150 °C T_ch rating ensure stable operation under lightning-induced line surges.

AC-DC Adapters

Industrial SMPS

Use Scenario: 65–120 W universal-input offline adapter for consumer electronics and IoT gateways.

IC Role / Device Role / Timing Role: Primary-side switching transistor in quasi-resonant flyback topology.

Use Value: Low R_DS(ON) and high E_AS enable no-snubber design, reducing BOM count and improving reliability.

Use Scenario: 150–200 W open-frame power supply for PLCs and motor drives.

IC Role / Device Role / Timing Role: Main switch in active-clamp forward converter operating at 100 kHz.

Use Value: 600 V rating and 11.5 A I_D support high-power density with minimal derating across line voltage variations.

PFC Boost Stages

LED Driver Power Stages

Use Scenario: Continuous-conduction-mode (CCM) boost PFC stage in commercial lighting ballasts.

IC Role / Device Role / Timing Role: High-side switch handling full-line rectified input (up to 375 VDC).

Use Value: Low C_iss and optimized Q_gd/Q_gs ratio improve power factor correction efficiency above 98%.

Use Scenario: Isolated LED driver for street lighting with surge immunity requirements.

IC Role / Device Role / Timing Role: Primary switch in flyback-based constant-current driver with 6 kV surge protection.

Use Value: Avalanche ruggedness and 150 °C T_ch rating ensure stable operation under lightning-induced line surges.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage switching MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12NM60ND	R_DS(ON) = 0.32 Ω (typ.), higher gate charge (Q_g = 32 nC), same TO-220 package	Slightly lower efficiency at full load; requires stronger gate driver due to higher Q_g	Preferred where STMicroelectronics supply chain alignment is required and 5–7% conduction loss increase is acceptable
IPP60R190C6	R_DS(ON) = 0.19 Ω (typ.), 650 V rating, PG-TO220-3-1 package (pin-compatible but different leadframe)	Better conduction loss but requires layout review for thermal pad clearance and gate loop inductance	Selected when upgrading efficiency beyond 90% is critical and board re-spin is feasible

Compared with STP12NM60ND and IPP60R190C6, the TK12E60W,S1VX offers optimal balance of low R_DS(ON), proven avalanche capability, and mature TO-220 mechanical fit-making it ideal for cost-sensitive, volume production of industrial and consumer offline power supplies without redesign risk.

Availability

TK12E60W,S1VX is available at Aetrix Electronics and suitable for AC-DC adapters, industrial SMPS, and LED driver power stages requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for TK12E60W,S1VX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions, with decades of expertise in high-reliability discrete components.

The TK12E60W,S1VX belongs to Toshiba's DTMOS™ IV family of Super Junction MOSFETs, engineered specifically for high-efficiency, high-voltage switching in offline power conversion systems up to 200 W.

FAQ

What is the maximum continuous drain current for TK12E60W,S1VX at 25°C case temperature?

The TK12E60W,S1VX has a maximum continuous drain current (I_D) of 11.5 A at T_c = 25°C, as specified in its Absolute Maximum Ratings table. This rating assumes proper heatsinking and adherence to the channel temperature limit of 150°C. At elevated case temperatures, derating is required per the PD–T_c curve in Figure 8.15 of the datasheet.

Does TK12E60W,S1VX have an integrated body diode, and what are its key recovery characteristics?

Yes, the TK12E60W,S1VX includes a monolithic body diode. Its reverse recovery time (t_rr) is 250 ns (typ.) at I_DR = 5.8 A and dI_DR/dt = 100 A/µs, with reverse recovery charge (Q_rr) of 2.3 µC (typ.). These values are measured under standardized conditions and support stable operation in hard-switched topologies without external diode supplementation.

Is TK12E60W,S1VX suitable for use in avalanche mode, and what is its rated single-pulse energy?

Yes, the TK12E60W,S1VX is fully rated for single-pulse avalanche operation with guaranteed E_AS = 140 mJ at T_ch = 25°C. This specification is validated per JEDEC JESD24-11 and enables robust transient suppression in flyback converters without external clamping circuits-reducing system cost and footprint.

What is the gate threshold voltage range for TK12E60W,S1VX, and how does it affect drive compatibility?

The TK12E60W,S1VX has a gate threshold voltage (V_th) range of 2.7 V to 3.7 V (measured at V_DS = 10 V, I_D = 0.6 mA). This range ensures reliable turn-on with standard 5 V logic-level drivers and most PWM controllers, while avoiding unintended conduction near 0 V due to noise margin.

What package type and pin configuration does TK12E60W,S1VX use, and how is thermal management implemented?

The TK12E60W,S1VX uses a TO-220 package (TOSHIBA 2-10X1A) with three leads: Pin 1 = Gate, Pin 2 = Drain (electrically connected to the metal tab/heatsink), Pin 3 = Source. Thermal management relies on mounting the tab directly to a heatsink with 0.6 N·m torque, leveraging its low R_th(ch-c) of 1.14 °C/W for effective power dissipation.

TK12E60W,S1VX Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: DTMOSIV

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 11.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 300mOhm @ 5.8A, 10V

Vgs(th) (Max) @ Id:: 3.7V @ 600µA

Gate Charge (Qg) (Max) @ Vgs:: 25 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 890 pF @ 300 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

TK12E60W,S1VX FAQ

1.How can I place an order for TK12E60W,S1VX through Aetrix?

Please submit a Request for Quotation (RFQ) for TK12E60W,S1VX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK12E60W,S1VX reliable?

The price and inventory of TK12E60W,S1VX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK12E60W,S1VX is usually 5 days.

3.What payment methods are accepted for TK12E60W,S1VX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK12E60W,S1VX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK12E60W,S1VX?

TK12E60W,S1VX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK12E60W,S1VX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK12E60W,S1VX?

For technical support, including TK12E60W,S1VX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK12E60W,S1VX requirements.

6.How does Aetrix verify that TK12E60W,S1VX is sourced from the original manufacturer or authorized distributors?

All TK12E60W,S1VX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK12E60W,S1VX meets industry standards.

7.What is the process for return or replacement of TK12E60W,S1VX?

All TK12E60W,S1VX units undergo pre-shipment inspection (PSI). If there is an issue with TK12E60W,S1VX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK12E60W,S1VX part is unused and in its original packaging.

Return procedure for TK12E60W,S1VX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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