Toshiba Semiconductor and Storage TK7E80W,S1X

Overview

TK7E80W,S1X from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel super-junction MOSFET designed for high-voltage switching in offline AC-DC power supplies. It features 800 V drain-source breakdown voltage, 0.795 Ω typical R_DS(ON) at V_GS = 10 V and I_D = 3.3 A, 6.5 A DC drain current, and TO-220 package with isolated heatsink-connected drain terminal - used in primary-side switching of 100–300 W flyback and LLC resonant converters.

For engineers reviewing the TK7E80W,S1X datasheet, TK7E80W,S1X pinout, TK7E80W,S1X application, or TK7E80W,S1X equivalent, this device is selected for high-efficiency, high-reliability 800 V-class SMPS where low conduction loss, avalanche ruggedness (242 mJ), and gate drive simplicity (3–4 V V_th) are critical design requirements.

Technical Context

This DTMOS™-structured MOSFET employs a super-junction architecture to achieve low R_DS(ON) without sacrificing voltage rating, enabling efficient operation in hard-switched and resonant topologies up to 800 V bus voltage. Its enhancement-mode gate threshold (3–4 V) ensures compatibility with standard 10 V gate drivers and avoids unintended turn-on during startup or transient conditions.

Thermal performance is optimized via direct-drain-to-heatsink mounting (R_th(ch-c) = 1.13 °C/W), while dynamic characteristics-including 700 pF input capacitance, 13 nC total gate charge, and 50 V/ns dv/dt ruggedness-support stable high-frequency switching up to 100 kHz in well-designed layouts.

Key Specifications

Pinout & Package

TK7E80W,S1X is housed in a TO-220 package (Toshiba designation: 2-10X1A), with the drain terminal electrically connected to the metal tab for direct heatsink mounting. The plastic body provides electrical isolation between drain and leads, and the device weighs 1.93 g (typ.).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Compared with STP8NK80ZFP and IXTH8N80L2, the TK7E80W,S1X delivers the lowest R_DS(ON) in TO-220, making it optimal for space-constrained 100–150 W SMPS where thermal resistance and conduction loss are dominant constraints - though neither alternative shares its exact pinout or thermal interface geometry.

Availability

TK7E80W,S1X is available at Aetrix Electronics and suitable for AC-DC adapters, industrial flyback power supplies, and LED drivers requiring stable component supply and long-term manufacturability.

Supply support for TK7E80W,S1X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with decades of expertise in high-voltage MOSFET technology.

The TK7E80W,S1X belongs to Toshiba's DTMOS™ IV super-junction MOSFET product line, engineered specifically for high-efficiency, high-reliability offline switching power supplies operating at 800 V class.

FAQ

What is the maximum continuous drain current rating for TK7E80W,S1X?

The TK7E80W,S1X has a DC drain current rating of 6.5 A at T_c = 25 °C. This value decreases with increasing case temperature - for example, it drops to approximately 4.2 A at T_c = 100 °C - and must be applied with proper heatsinking to maintain channel temperature ≤150 °C. Derating curves are provided in Figure 8.15 of the official datasheet.

Does TK7E80W,S1X include integrated gate protection?

No, the TK7E80W,S1X does not integrate gate Zener protection. It specifies ±20 V absolute maximum gate-source voltage and requires external gate clamping (e.g., 15 V TVS diode) in noisy environments. Its gate oxide is sensitive to ESD, so handling per JEDEC STD-20 must be observed during assembly and testing.

Can TK7E80W,S1X be used in zero-voltage switching (ZVS) topologies?

Yes, the TK7E80W,S1X supports ZVS operation due to its low C_oss (20 pF) and favorable C_iss/C_oss ratio. In LLC resonant converters, its 13 nC Q_g and 50 V/ns dv/dt ruggedness enable reliable soft-switching up to 300 kHz when paired with appropriate resonant tank design and gate timing control.

What is the safe operating area (SOA) limitation for TK7E80W,S1X in linear mode?

The TK7E80W,S1X is not rated for linear (ohmic) operation. Its SOA curve (Figure 8.17) defines only pulsed, non-repetitive limits - e.g., 6.5 A at 400 V for ≤10 µs. Continuous linear use risks thermal runaway; it must be operated in switching mode only, with adequate dead time and voltage/current limiting in all applications.

Is TK7E80W,S1X RoHS compliant and halogen-free?

Yes, TK7E80W,S1X complies with EU RoHS Directive 2011/65/EU and is halogen-free per Toshiba's environmental specifications. Full compliance documentation, including substance declarations and test reports, is available upon request from Toshiba or authorized distributors such as Digi-Key and Mouser.