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Toshiba Semiconductor and Storage TK19A45D(STA4,Q,M)

Name: TK19A45D(STA4,Q,M)
Brand: Toshiba Semiconductor and Storage
SKU: TK19A45D(STA4,Q,M)
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK19A45D(STA4,Q,M)

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: TK19A45D(STA4,Q,M).pdf

Description:: MOSFET N-CH 450V 19A TO220SIS

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Product details

Overview

TK19A45D(STA4,Q,M) from Toshiba is a silicon N-channel power MOSFET designed for high-voltage switching regulator applications. It features 450 V drain-source breakdown voltage (V_(BR)DSS), 19 A continuous drain current (I_D), and low R_DS(ON) of 0.19 Ω (typ.) at V_GS = 10 V, enabling efficient DC-DC conversion in industrial SMPS designs.

For engineers reviewing the TK19A45D(STA4,Q,M) datasheet, TK19A45D(STA4,Q,M) pinout, TK19A45D(STA4,Q,M) application, or TK19A45D(STA4,Q,M) equivalent, key selection considerations include avalanche energy rating (E_AS = 513 mJ), gate charge (Q_g = 45 nC), thermal resistance (R_th(ch-c) = 2.5 °C/W), and SC-67 package compatibility with through-hole mounting.

Technical Context

This MOSFET employs π-MOSⅦ process technology to achieve enhanced forward transfer admittance (|Y_fs| = 10 S typ.) and low gate threshold voltage (V_th = 2.0–4.0 V), supporting reliable turn-on with standard logic-level gate drivers. Its enhancement-mode operation ensures safe default-off behavior in power stage control.

The device integrates a built-in body diode with reverse recovery charge Q_rr = 25 μC and t_rr = 1700 ns, making it suitable for hard-switched topologies where diode conduction occurs during dead-time. Avalanche ruggedness is validated per JEITA SC-67 mechanical outline with single-pulse E_AS = 513 mJ at T_ch = 25°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	450 V - Supports input rails up to 380 V AC rectified systems without derating.
R_DS(ON)	0.19 Ω (typ.) - Enables <1.8 W conduction loss at 9.5 A, reducing heatsink requirements.
I_D (continuous)	19 A - Rated for sustained output current in 300–500 W SMPS stages.
Q_g	45 nC - Determines gate drive power requirement; compatible with common 1-A peak drivers.
E_AS	513 mJ - Withstands single-event inductive energy spikes in flyback or forward converters.
R_th(ch-c)	2.5 °C/W - Allows direct mounting to heatsink with minimal thermal interface resistance.
\|Y_fs\|	10 S (typ.) - High transconductance improves small-signal gain and switching speed consistency.

Pinout & Package

TK19A45D(STA4,Q,M) uses the JEITA SC-67 (Toshiba 2-10U1B) through-hole package with 3 pins and 1.7 g typical mass. Thermal performance is optimized for case-mounted heatsinking.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Control terminal requiring ≤±30 V gate-source voltage; 45 nC total charge demands robust driver staging.
2	Drain	High-voltage power node rated for 450 V; connects to transformer primary or bus rail in isolated topologies.
3	Source	Power return path and reference for gate drive; internal diode anode enables synchronous rectification in some configurations.

Key Features

Feature	Design Value
π-MOSⅦ silicon process	Delivers lower R_DS(ON) and higher \|Y_fs\| vs. prior generations, improving efficiency and dynamic response.
Single-pulse avalanche rating	513 mJ at V_DD = 90 V confirms ruggedness against inductive switching stress without external snubbers.
Low gate leakage	IG_SS ≤ ±1 μA at ±30 V ensures stable biasing over temperature and time in high-impedance gate networks.
Enhancement-mode threshold	V_th = 2.0–4.0 V allows clean turn-on with 5 V or 3.3 V microcontroller outputs when combined with gate buffering.
Body diode with defined Q_rr	Q_rr = 25 μC supports predictable timing in discontinuous conduction mode (DCM) flyback designs.

Applications

Industrial SMPS	AC-DC Adapters
Use Scenario: 400 W open-frame power supply for PLC I/O modules operating from 85–264 V AC input. IC Role / Device Role / Timing Role: Primary-side switching transistor in quasi-resonant flyback topology, switching at 65 kHz with ZVS-assisted turn-on. Use Value: 0.19 Ω R_DS(ON) reduces conduction loss by 35% vs. comparable 0.28 Ω devices, lowering thermal load on chassis-mounted heatsink.	Use Scenario: Universal-input 90 W laptop adapter with active PFC front-end and LLC resonant secondary stage. IC Role / Device Role / Timing Role: PFC boost switch handling 1.2 A RMS current at 100 kHz, operating in continuous conduction mode. Use Value: 513 mJ avalanche energy rating eliminates need for external clamping circuits during line surge events per IEC 61000-4-5.
Motor Drive Inverters	UPS DC-DC Stages
Use Scenario: 3-phase inverter stage in 1.5 kW HVAC blower drive with 12 V gate drive and 400 V DC bus. IC Role / Device Role / Timing Role: Low-side switch in IGBT/MOSFET hybrid half-bridge, commutated at 8 kHz with 100 ns dead-time. Use Value: 10 S \|Y_fs\| ensures consistent gate drive current delivery across temperature, minimizing shoot-through risk.	Use Scenario: Bidirectional DC-DC converter in online UPS linking 48 V battery bank to 380 V DC link. IC Role / Device Role / Timing Role: Synchronous rectifier in buck-boost stage, conducting reverse current during battery discharge phase. Use Value: Body diode V_DSF = −1.7 V at 19 A enables low-loss freewheeling without external Schottky diodes.

Industrial SMPS

AC-DC Adapters

Use Scenario: 400 W open-frame power supply for PLC I/O modules operating from 85–264 V AC input.

IC Role / Device Role / Timing Role: Primary-side switching transistor in quasi-resonant flyback topology, switching at 65 kHz with ZVS-assisted turn-on.

Use Value: 0.19 Ω R_DS(ON) reduces conduction loss by 35% vs. comparable 0.28 Ω devices, lowering thermal load on chassis-mounted heatsink.

Use Scenario: Universal-input 90 W laptop adapter with active PFC front-end and LLC resonant secondary stage.

IC Role / Device Role / Timing Role: PFC boost switch handling 1.2 A RMS current at 100 kHz, operating in continuous conduction mode.

Use Value: 513 mJ avalanche energy rating eliminates need for external clamping circuits during line surge events per IEC 61000-4-5.

Motor Drive Inverters

UPS DC-DC Stages

Use Scenario: 3-phase inverter stage in 1.5 kW HVAC blower drive with 12 V gate drive and 400 V DC bus.

IC Role / Device Role / Timing Role: Low-side switch in IGBT/MOSFET hybrid half-bridge, commutated at 8 kHz with 100 ns dead-time.

Use Value: 10 S |Y_fs| ensures consistent gate drive current delivery across temperature, minimizing shoot-through risk.

Use Scenario: Bidirectional DC-DC converter in online UPS linking 48 V battery bank to 380 V DC link.

IC Role / Device Role / Timing Role: Synchronous rectifier in buck-boost stage, conducting reverse current during battery discharge phase.

Use Value: Body diode V_DSF = −1.7 V at 19 A enables low-loss freewheeling without external Schottky diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP19NF45	R_DS(ON) = 0.22 Ω (typ.), Q_g = 48 nC, E_AS = 420 mJ, TO-220FP package	Higher conduction loss and lower avalanche margin; requires larger heatsink footprint	Preferred where legacy TO-220FP board space exists and 450 V rating suffices
IRF740BPBF	R_DS(ON) = 0.55 Ω (max), Q_g = 63 nC, E_AS = 250 mJ, TO-220AB package	Lower voltage rating (400 V), higher R_DS(ON), and reduced ruggedness limit use to <300 W designs	Suitable only for cost-sensitive, non-avalanche-critical 200 W supplies with conservative derating

Compared with STP19NF45 and IRF740BPBF, TK19A45D(STA4,Q,M) delivers superior conduction efficiency, higher single-pulse avalanche immunity, and tighter V_th distribution-critical for stable gate drive in high-reliability industrial power systems.

Availability

TK19A45D(STA4,Q,M) is available at Aetrix Electronics and suitable for industrial SMPS, AC-DC adapters, motor drive inverters, and UPS DC-DC stages requiring stable component supply and long-term lifecycle support.

Supply support for TK19A45D(STA4,Q,M) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with global manufacturing and quality certification to ISO/TS 16949.

TK19A45D(STA4,Q,M) belongs to Toshiba's π-MOSⅦ high-voltage power MOSFET family, engineered for high-efficiency, high-reliability switching in industrial and infrastructure power conversion systems.

FAQ

What is the maximum continuous drain current rating for TK19A45D(STA4,Q,M) at 25°C case temperature?

The TK19A45D(STA4,Q,M) is rated for 19 A continuous drain current (I_D) at T_c = 25°C, as specified in its Absolute Maximum Ratings table. This rating assumes proper heatsinking to maintain channel temperature below 150°C. Derating is required above 25°C case temperature per the PD–T_c curve in the datasheet.

Does TK19A45D(STA4,Q,M) support gate drive from a 3.3 V microcontroller?

No-TK19A45D(STA4,Q,M) has a gate threshold voltage range of 2.0–4.0 V, but full enhancement requires V_GS ≥ 10 V to achieve its specified R_DS(ON) of 0.19 Ω. A 3.3 V signal cannot reliably turn the device fully on; a gate driver with ≥10 V output is required for optimal conduction performance.

What is the safe operating area (SOA) limitation for TK19A45D(STA4,Q,M) in linear mode?

The TK19A45D(STA4,Q,M) SOA graph shows DC operation limited to 19 A at V_DS ≤ 25 V. At higher V_DS, current must be reduced to stay within the 50 W power dissipation limit and avoid thermal runaway. Linear-mode use is not recommended beyond brief transient conditions due to low thermal inertia.

Is TK19A45D(STA4,Q,M) RoHS compliant?

Yes-TK19A45D(STA4,Q,M) is marked [[G]]/RoHS COMPATIBLE per Toshiba documentation, confirming compliance with Directive 2011/65/EU. Lead-free soldering profiles are supported, and the device contains no restricted substances above allowable thresholds.

What is the meaning of "STA4" in TK19A45D(STA4,Q,M)?

"STA4" is Toshiba's internal tape-and-reel packaging code indicating that TK19A45D(STA4,Q,M) is supplied in embossed carrier tape (8 mm width) with 1,000 units per reel, meeting JEDEC standard J-STD-033 for moisture sensitivity level (MSL) 1 handling. "Q,M" denotes quality grade and manufacturing lot traceability.

TK19A45D(STA4,Q,M) Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: π-MOSVII

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 450 V

Current - Continuous Drain (Id) @ 25°C:: 19A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 250mOhm @ 9.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 45 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2600 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 50W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220SIS

TK19A45D(STA4,Q,M) FAQ

1.How can I place an order for TK19A45D(STA4,Q,M) through Aetrix?

Please submit a Request for Quotation (RFQ) for TK19A45D(STA4,Q,M) on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK19A45D(STA4,Q,M) reliable?

The price and inventory of TK19A45D(STA4,Q,M) are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK19A45D(STA4,Q,M) is usually 5 days.

3.What payment methods are accepted for TK19A45D(STA4,Q,M)?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK19A45D(STA4,Q,M) transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK19A45D(STA4,Q,M)?

TK19A45D(STA4,Q,M) orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK19A45D(STA4,Q,M) order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK19A45D(STA4,Q,M)?

For technical support, including TK19A45D(STA4,Q,M) datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK19A45D(STA4,Q,M) requirements.

6.How does Aetrix verify that TK19A45D(STA4,Q,M) is sourced from the original manufacturer or authorized distributors?

All TK19A45D(STA4,Q,M) products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK19A45D(STA4,Q,M) meets industry standards.

7.What is the process for return or replacement of TK19A45D(STA4,Q,M)?

All TK19A45D(STA4,Q,M) units undergo pre-shipment inspection (PSI). If there is an issue with TK19A45D(STA4,Q,M), returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK19A45D(STA4,Q,M) part is unused and in its original packaging.

Return procedure for TK19A45D(STA4,Q,M):

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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