Toshiba Semiconductor and Storage TK16E60W,S1VX

Overview

TK16E60W,S1VX from Toshiba is a silicon N-channel super-junction MOSFET designed for high-voltage switching in offline power supplies and DC-DC converters. It features 600 V V_DSS, 15.8 A I_D (DC), R_DS(ON) = 0.16 Ω (typ.), and TO-220 package with heatsink-connected drain - enabling efficient operation in AC/DC adapters and industrial SMPS.

For engineers reviewing the TK16E60W,S1VX datasheet, TK16E60W,S1VX pinout, TK16E60W,S1VX application, or TK16E60W,S1VX equivalent, key selection criteria include avalanche ruggedness (E_AS = 194 mJ), gate threshold voltage range (2.7–3.7 V), MOSFET dv/dt immunity (≥50 V/ns), and thermal resistance (R_th(ch-c) = 0.962 °C/W) under conduction-limited designs.

Technical Context

This device implements Toshiba's DTMOS™ IV super-junction architecture to achieve low R_DS(ON) while maintaining fast switching and robust avalanche capability. Its enhancement-mode operation with V_th = 2.7–3.7 V ensures compatibility with standard 10 V gate drivers and enables reliable turn-on without external bias circuitry.

The TO-220 package integrates the drain terminal directly to the heatsink tab, supporting high-power dissipation (P_D = 130 W at T_c = 25 °C) and simplifying thermal design in compact power stages. Dynamic parameters - including C_iss = 1350 pF, Q_g = 38 nC, and t_on/t_off = 50/100 ns - reflect optimized trade-offs between switching loss and EMI control.

Key Specifications

Pinout & Package

TK16E60W,S1VX is housed in a TO-220 package (TOSHIBA designation: 2-10X1A), with the drain terminal electrically and thermally connected to the metal tab for direct heatsink attachment. The package weighs 1.93 g and supports mounting torque of 0.6 N·m.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP16NF60FD and IXTH16N60L2, TK16E60W,S1VX delivers the lowest R_DS(ON) in TO-220 form factor and optimal balance of avalanche ruggedness, switching speed, and gate drive simplicity for 150–250 W industrial and lighting power supplies.

Availability

TK16E60W,S1VX is available at Aetrix Electronics and suitable for AC/DC adapters, industrial SMPS, LED drivers, and server PFC modules requiring stable component supply, long-term lifecycle support, and traceable sourcing from authorized channels.

Supply support for TK16E60W,S1VX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with decades of expertise in high-voltage MOSFET technology.

The TK16E60W,S1VX belongs to Toshiba's DTMOS™ IV super-junction MOSFET product line, engineered specifically for high-efficiency, high-reliability switching power supplies operating at 600 V class with reduced conduction and switching losses.

FAQ

What is the maximum continuous drain current for TK16E60W,S1VX at 100°C case temperature?

The TK16E60W,S1VX datasheet specifies I_D = 15.8 A at T_c = 25 °C. At T_c = 100 °C, derating applies: using the guaranteed maximum P_D curve (Fig. 8.15), the allowable power dissipation drops to ~55 W. With R_DS(ON) ≈ 0.18 Ω (max) at elevated temperature, the corresponding I_D is approximately 17.5 A, but thermal limits constrain practical continuous current to ~11.5 A for reliable long-term operation. Always verify with actual board thermal performance.

Does TK16E60W,S1VX have a built-in body diode, and what are its key recovery characteristics?

Yes, TK16E60W,S1VX includes an integrated body diode. Per datasheet Section 6.4, it exhibits V_DSF = −1.7 V (max) at I_DR = 15.8 A, t_rr = 280 ns (typ.), Q_rr = 2.9 µC (typ.), and I_rr = 23 A (typ.). These values indicate moderate reverse recovery performance suitable for discontinuous conduction mode (DCM) flyback and critical conduction mode (CrCM) PFC, but not ideal for high-frequency ZVS resonant topologies without external optimization.

Can TK16E60W,S1VX be used in avalanche mode repeatedly, or is E_AS only for single-pulse stress?

The TK16E60W,S1VX is rated for single-pulse avalanche energy E_AS = 194 mJ (T_ch = 25 °C), as defined in Absolute Maximum Ratings Note 1. Repetitive avalanche operation is not characterized or guaranteed. Continuous exposure to avalanche conditions accelerates wear-out and may cause premature failure. Designers must ensure circuit conditions avoid repeated avalanche - e.g., via proper snubber design, clamp circuits, or topology selection - even if individual events remain below E_AS.

What is the gate threshold voltage range for TK16E60W,S1VX, and how does it affect drive circuit design?

The TK16E60W,S1VX has a gate threshold voltage V_th of 2.7–3.7 V (V_DS = 10 V, I_D = 0.79 mA). This range ensures reliable turn-on with standard 5 V or 10 V gate drivers while providing noise margin against spurious triggering. For robust operation, gate drive should deliver ≥10 V to achieve full enhancement (R_DS(ON) = 0.16 Ω typ.) and minimize Miller-induced shoot-through risk in half-bridge configurations.

Is TK16E60W,S1VX RoHS compliant and lead-free?

Yes, TK16E60W,S1VX is RoHS compliant and lead-free. Toshiba confirms compliance with EU Directive 2011/65/EU (RoHS 2) and related amendments. The device uses lead-free terminations and meets JEDEC J-STD-609 Category 1 marking requirements. Full material declarations and test reports are available upon request through authorized Toshiba distributors or Aetrix Electronics' technical support team.