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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK8A60W,S4VX

Name: TK8A60W,S4VX
Brand: Toshiba Semiconductor and Storage
SKU: TK8A60W,S4VX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK8A60W,S4VX

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: TK8A60W,S4VX.pdf

Description:: MOSFET N-CH 600V 8A TO220SIS

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Product details

Overview

TK8A60W,S4VX from Toshiba is a silicon N-channel super-junction MOSFET designed for high-voltage switching in offline power supplies and DC-DC converters. It delivers 600 V drain-source breakdown voltage, 8.0 A continuous drain current, and low R_DS(ON) of 0.42 Ω (typ.) at V_GS = 10 V, enabling efficient operation in 85–265 VAC input SMPS designs.

For engineers reviewing the TK8A60W,S4VX datasheet, TK8A60W,S4VX pinout, TK8A60W,S4VX application, or TK8A60W,S4VX equivalent, key selection criteria include its TO-220SIS package thermal performance (R_th(ch-c) = 4.17 °C/W), avalanche ruggedness (E_AS = 105 mJ), and gate threshold voltage range (2.7–3.7 V) for reliable drive compatibility with standard PWM controllers.

Technical Context

The TK8A60W,S4VX implements Toshiba's DTMOS™ (Double-diffused Trench MOS) super-junction architecture to achieve high voltage blocking with low conduction loss. Its enhancement-mode operation and 10 V gate drive requirement align with industry-standard PWM ICs like UC384x and TL494.

Dynamic characteristics include C_iss = 570 pF, Q_g = 18.5 nC, and tr/tf = 20/5.5 ns, supporting high-frequency switching up to 100 kHz while maintaining dv/dt ruggedness ≥50 V/ns and reverse recovery robustness (trr = 230 ns, Qrr = 1.9 µC).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - supports universal AC input (85–265 VAC) with sufficient margin for surge and ringing
R_DS(ON)	0.42 Ω (typ.) - reduces conduction loss in primary-side switching, improving efficiency in 65–150 W adapters
I_D (DC)	8.0 A - enables use in single-switch flyback and forward converters up to ~120 W output
E_AS	105 mJ - provides single-pulse avalanche energy handling without external snubbers in clamp-free designs
V_th	2.7–3.7 V - ensures clean turn-on with standard 5 V or 12 V gate drivers, minimizing shoot-through risk
Q_g	18.5 nC - determines gate driver power requirement; compatible with low-cost bipolar or CMOS gate buffers
R_th(ch-c)	4.17 °C/W - allows 30 W dissipation with ≤125 °C case temperature rise, supporting heatsink-free or minimal heatsink designs

Pinout & Package

TK8A60W,S4VX is housed in a TO-220SIS (JEITA SC-67, Toshiba 2-10U1S) package with internal source-isolation - the metal tab is electrically isolated from the drain, enabling direct mounting to heatsinks without insulating pads.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	Receives PWM signal; requires <18.5 nC charge for full enhancement; sensitive to ESD
2 (Drain)	High-voltage power input	Connected to transformer primary or bulk capacitor; rated for 600 V repetitive blocking
3 (Source)	Power return and reference	Common node for current sensing and gate drive return; isolated from metal tab for safe heatsinking

Key Features

Feature	Design Value
Super-junction DTMOS™ structure	Enables 0.42 Ω R_DS(ON) at 600 V, reducing conduction loss by >35% vs. planar MOSFETs in same package
Isolated TO-220SIS package	Eliminates need for insulating washers or silicone pads when mounted to shared heatsinks in multi-MOSFET systems
Avalanche-rated operation	Guarantees 105 mJ single-pulse energy absorption, allowing removal of clamp circuits in cost-sensitive flyback designs
Low Q_gd/Q_g ratio	Q_gd = 9.0 nC of total 18.5 nC Q_g improves hard-switching efficiency and reduces Miller-induced false turn-on

Applications

AC-DC Adapters	LED Driver Power Supplies
Use Scenario: 65 W universal-input adapter for laptops and monitors operating from 85–265 VAC. IC Role / Device Role / Timing Role: Primary-side high-voltage switch in discontinuous conduction mode (DCM) flyback topology. Use Value: Low R_DS(ON) and high V_DSS enable >88% efficiency at full load without active cooling.	Use Scenario: Constant-voltage LED driver powering commercial signage with 36–48 V output. IC Role / Device Role / Timing Role: Main switching element in quasi-resonant (QR) flyback converter with valley-switching control. Use Value: Avalanche ruggedness eliminates need for external RCD clamp, reducing BOM count and board area.
Industrial Power Modules	UPS Battery Chargers
Use Scenario: 120 W auxiliary power supply inside PLC I/O modules requiring long-term reliability. IC Role / Device Role / Timing Role: Primary switch in forward converter with synchronous rectification on secondary side. Use Value: Isolated TO-220SIS package allows direct heatsink mounting in compact enclosures with no insulation derating.	Use Scenario: Onboard battery charger in line-interactive UPS handling 100–240 VAC input and charging 24 V lead-acid banks. IC Role / Device Role / Timing Role: High-side switch in half-bridge configuration driving isolation transformer primary. Use Value: Gate threshold range (2.7–3.7 V) ensures stable turn-on across wide temperature (-40 to +125 °C ambient) and supply voltage variation.

AC-DC Adapters

LED Driver Power Supplies

Use Scenario: 65 W universal-input adapter for laptops and monitors operating from 85–265 VAC.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch in discontinuous conduction mode (DCM) flyback topology.

Use Value: Low R_DS(ON) and high V_DSS enable >88% efficiency at full load without active cooling.

Use Scenario: Constant-voltage LED driver powering commercial signage with 36–48 V output.

IC Role / Device Role / Timing Role: Main switching element in quasi-resonant (QR) flyback converter with valley-switching control.

Use Value: Avalanche ruggedness eliminates need for external RCD clamp, reducing BOM count and board area.

Industrial Power Modules

UPS Battery Chargers

Use Scenario: 120 W auxiliary power supply inside PLC I/O modules requiring long-term reliability.

IC Role / Device Role / Timing Role: Primary switch in forward converter with synchronous rectification on secondary side.

Use Value: Isolated TO-220SIS package allows direct heatsink mounting in compact enclosures with no insulation derating.

Use Scenario: Onboard battery charger in line-interactive UPS handling 100–240 VAC input and charging 24 V lead-acid banks.

IC Role / Device Role / Timing Role: High-side switch in half-bridge configuration driving isolation transformer primary.

Use Value: Gate threshold range (2.7–3.7 V) ensures stable turn-on across wide temperature (-40 to +125 °C ambient) and supply voltage variation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage switching MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP8NK60ZFP	600 V, 8 A, R_DS(ON) = 0.55 Ω (typ.), TO-220FP package (drain-connected tab)	Requires insulated mounting hardware; lower avalanche rating (E_AS = 75 mJ)	Choose if cost sensitivity outweighs thermal advantage and avalanche margin
FQP8N60C	600 V, 8 A, R_DS(ON) = 0.58 Ω (typ.), TO-220 package (drain-connected tab)	No isolation between tab and drain; higher gate charge (Q_g = 22 nC)	Acceptable where heatsink isolation is managed externally and layout permits higher drive loss

Compared with STP8NK60ZFP and FQP8N60C, TK8A60W,S4VX offers superior thermal interface via isolated tab, lower conduction loss, and higher avalanche energy - critical for unclamped flyback and industrial-grade reliability without added components.

Availability

TK8A60W,S4VX is available at Aetrix Electronics and suitable for AC-DC adapters, LED driver power supplies, and industrial power modules requiring stable component supply and long-lifecycle support.

Supply support for TK8A60W,S4VX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions, with decades of expertise in high-reliability discrete components.

The TK8A60W,S4VX belongs to Toshiba's DTMOS™ IV super-junction MOSFET product line, engineered specifically for high-efficiency, high-voltage switching in offline SMPS applications demanding low R_DS(ON), robust avalanche capability, and thermally optimized packaging.

FAQ

What is the maximum continuous drain current for TK8A60W,S4VX at 100°C case temperature?

The TK8A60W,S4VX has a rated continuous drain current (I_D) of 8.0 A at T_c = 25°C. At T_c = 100°C, derating applies per the Safe Operating Area curve (Fig. 8.17); the practical limit is approximately 4.5 A to maintain channel temperature ≤150°C with R_th(ch-c) = 4.17 °C/W. Always verify thermal design using actual PCB copper area and airflow conditions.

Does TK8A60W,S4VX have an integrated body diode, and what are its reverse recovery characteristics?

Yes, TK8A60W,S4VX includes a parasitic body diode with V_DSF = −1.7 V (max) at I_DR = 8.0 A and t_rr = 230 ns (typ.) at I_DR = 4.0 A. Its Q_rr = 1.9 µC (typ.) and I_rr = 17 A (typ.) support moderate-frequency hard-switching but recommend soft-switching topologies for optimal efficiency.

Can TK8A60W,S4VX be used in zero-voltage switching (ZVS) resonant converters?

TK8A60W,S4VX supports ZVS operation due to its low C_oss (16 pF typ.) and Co(er) (26 pF typ.), enabling efficient resonant tank tuning. However, its Q_gd/Q_g ratio (9.0/18.5) and dv/dt ruggedness (≥50 V/ns) make it more suited to QR flyback than high-frequency LLC; verify ZVS boundary with actual circuit parasitics and gate drive strength.

What is the gate threshold voltage range of TK8A60W,S4VX, and how does it affect drive circuit design?

The gate threshold voltage (V_th) of TK8A60W,S4VX is specified as 2.7–3.7 V at V_DS = 10 V and I_D = 0.4 mA. This range ensures reliable turn-on with 5 V logic-level drivers and compatibility with 12 V gate supplies, while avoiding unintended conduction during noise transients - no level-shifting required in standard PWM-based gate drive circuits.

Is TK8A60W,S4VX RoHS compliant, and what marking indicates compliance?

Yes, TK8A60W,S4VX is RoHS compliant. Per Toshiba documentation, underlined lot numbers on the device marking indicate [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] status. Non-underlined markings denote standard Pb-containing versions. Always confirm RoHS status via the specific date code and consult Toshiba's environmental compliance database for your batch.

TK8A60W,S4VX Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: DTMOSIV

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 8A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 500mOhm @ 4A, 10V

Vgs(th) (Max) @ Id:: 3.7V @ 400µA

Gate Charge (Qg) (Max) @ Vgs:: 18.5 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 570 pF @ 300 V

FET Feature:: -

Power Dissipation (Max):: 30W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220SIS

TK8A60W,S4VX FAQ

1.How can I place an order for TK8A60W,S4VX through Aetrix?

Please submit a Request for Quotation (RFQ) for TK8A60W,S4VX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK8A60W,S4VX reliable?

The price and inventory of TK8A60W,S4VX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK8A60W,S4VX is usually 5 days.

3.What payment methods are accepted for TK8A60W,S4VX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK8A60W,S4VX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK8A60W,S4VX?

TK8A60W,S4VX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK8A60W,S4VX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK8A60W,S4VX?

For technical support, including TK8A60W,S4VX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK8A60W,S4VX requirements.

6.How does Aetrix verify that TK8A60W,S4VX is sourced from the original manufacturer or authorized distributors?

All TK8A60W,S4VX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK8A60W,S4VX meets industry standards.

7.What is the process for return or replacement of TK8A60W,S4VX?

All TK8A60W,S4VX units undergo pre-shipment inspection (PSI). If there is an issue with TK8A60W,S4VX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK8A60W,S4VX part is unused and in its original packaging.

Return procedure for TK8A60W,S4VX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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