Toshiba Semiconductor and Storage TK10E80W,S1X

Overview

TK10E80W from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel Super Junction MOSFET (DTMOS™) designed for high-voltage switching in offline AC-DC power supplies and industrial SMPS. It delivers 800 V drain-source breakdown voltage, 9.5 A DC drain current, and low R_DS(ON) of 0.46 Ω (typ.) at V_GS = 10 V, enabling efficient operation in 400–640 V bus applications such as server PSUs and telecom rectifiers.

For engineers reviewing the TK10E80W datasheet, TK10E80W pinout, TK10E80W application, or TK10E80W equivalent, key selection considerations include its TO-220 package thermal performance (R_th(ch-c) = 0.962 °C/W), gate threshold range (3.0–4.0 V), avalanche energy rating (306 mJ), and diode reverse recovery characteristics (t_rr = 300 ns, Q_rr = 3.2 µC) critical for hard-switched PFC and LLC resonant stages.

Technical Context

This device implements Toshiba's DTMOS™ IV process with a super junction structure to achieve high voltage blocking and low conduction loss simultaneously. Its enhancement-mode operation (V_th = 3.0–4.0 V) ensures reliable turn-on with standard 10 V gate drivers, while the integrated body diode supports freewheeling in flyback and forward converters.

The TK10E80W features optimized dynamic parameters for high-frequency switching: C_iss = 1150 pF, C_oss = 27 pF, and Q_g = 19 nC (typ.), supporting operation up to 100 kHz in hard-switched topologies and enabling reduced gate drive loss in high-efficiency designs.

Key Specifications

Pinout & Package

TK10E80W is housed in a through-hole TO-220 package (TOSHIBA designation: 2-10X1A), with the drain connected internally to the metal tab for direct heatsink attachment and thermal dissipation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Compared with STP10NK80ZFP and IPP65R190CFD7, the TK10E80W offers superior R_DS(ON) and avalanche capability for 800 V applications, while maintaining compatibility with legacy TO-220 heatsink footprints and standard gate drive voltages.

Availability

TK10E80W is available at Aetrix Electronics and suitable for server power supplies, industrial AC-DC adapters, and telecom rectifiers requiring stable component supply, long-term lifecycle support, and traceable sourcing for production programs.

Supply support for TK10E80W includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, analog ICs, and storage solutions, with decades of expertise in high-reliability power MOSFET design.

The TK10E80W belongs to Toshiba's DTMOS™ IV super junction MOSFET product line, engineered specifically for high-efficiency, high-voltage switching in industrial and communications power supplies operating above 400 V DC.

FAQ

What is the maximum continuous drain current rating for TK10E80W at 100°C case temperature?

The TK10E80W has a DC drain current rating of 9.5 A at T_c = 25 °C. At T_c = 100 °C, derating applies per the Safe Operating Area curve (Fig. 8.17); the practical continuous current drops to approximately 5.2 A due to thermal limitations and R_DS(ON) increase. Always verify channel temperature remains ≤150 °C using R_th(ch-c) = 0.962 °C/W in thermal calculations.

Does TK10E80W have a built-in body diode, and what are its key recovery parameters?

Yes, the TK10E80W includes an integrated N-channel body diode. Its key recovery parameters are reverse recovery time t_rr = 300 ns (typ.), reverse recovery charge Q_rr = 3.2 µC (typ.), and peak reverse recovery current I_rr = 22 A (typ.), measured at V_DD ≈ 640 V, I_DR = 4.8 A, and -dI_DR/dt = 100 A/µs. These values are critical for minimizing loss in hard-switched PFC stages.

Can TK10E80W be used as a direct replacement for older Toshiba TK10E80D in existing designs?

No, TK10E80W is not a direct replacement for TK10E80D. While both share the same 800 V rating and TO-220 package, the TK10E80W uses DTMOS™ IV technology with lower R_DS(ON) (0.46 Ω vs. 0.55 Ω typ.) and improved Q_g/C_oss ratio. Layout and gate drive may remain compatible, but thermal and switching behavior differences require validation in the target application.

What is the recommended gate resistor value for optimal switching performance of TK10E80W?

A gate resistor of 10 Ω is specified in the datasheet for switching time measurements (tr = 35 ns, tf = 10 ns). For most 65–100 kHz applications, R_G = 10–22 Ω balances switching loss, EMI, and gate driver stress. Lower values (≤5 Ω) risk overshoot and ringing; higher values (>33 Ω) increase switching losses and heat generation in the driver stage.

Is TK10E80W RoHS compliant and halogen-free?

Yes, TK10E80W complies with the EU RoHS Directive and is halogen-free per Toshiba's environmental specifications. The device carries the RoHS marking on its package and meets JEDEC J-STD-70B requirements. Full compliance documentation, including material declarations and test reports, is available upon request from Toshiba or authorized distributors.