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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
TK12A60W,S4VX MOSFET N-CH 600V 11.5A TO220SIS Toshiba Semiconductor and Storage	79	RFQ	Datasheet	DTMOSIV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	11.5A (Ta)	10V	300mOhm @ 5.8A, 10V	3.7V @ 600µA	25 nC @ 10 V	±30V	890 pF @ 300 V	-	35W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK28E65W,S1X PB-F POWER MOSFET TRANSISTOR TO- Toshiba Semiconductor and Storage	50	RFQ	Datasheet	DTMOSIV	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	27.6A (Ta)	10V	110mOhm @ 13.8A, 10V	3.5V @ 1.6mA	75 nC @ 10 V	±30V	3000 pF @ 300 V	-	230W (Tc)	150°C	-	-	Through Hole	TO-220
TK25E60X5,S1X MOSFET N-CH 600V 25A TO220 Toshiba Semiconductor and Storage	100	RFQ	Datasheet	DTMOSIV-H	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	25A (Ta)	10V	140mOhm @ 7.5A, 10V	4.5V @ 1.2mA	60 nC @ 10 V	±30V	2400 pF @ 300 V	-	180W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220
TK25N60X5,S1F MOSFET N-CH 600V 25A TO247 Toshiba Semiconductor and Storage	76	RFQ	Datasheet	DTMOSIV-H	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	25A (Ta)	10V	140mOhm @ 7.5A, 10V	4.5V @ 1.2mA	60 nC @ 10 V	±30V	2400 pF @ 300 V	-	180W (Tc)	150°C (TJ)	-	-	Through Hole	TO-247
TK20E60W,S1VX MOSFET N-CH 600V 20A TO220 Toshiba Semiconductor and Storage	58	RFQ	Datasheet	DTMOSIV	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	20A (Ta)	10V	155mOhm @ 10A, 10V	3.7V @ 1mA	48 nC @ 10 V	±30V	1680 pF @ 300 V	-	165W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220
TK110N65Z,S1F POWER MOSFET TRANSISTOR TO-247(O Toshiba Semiconductor and Storage	35	RFQ	Datasheet	DTMOSVI	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	24A (Ta)	10V	110mOhm @ 12A, 10V	4V @ 1.02mA	40 nC @ 10 V	±30V	2250 pF @ 300 V	-	190W (Tc)	150°C	-	-	Through Hole	TO-247
IPA65R110CFDXKSA2 MOSFET N-CH 650V 31.2A TO220 Infineon Technologies	50	RFQ	Datasheet	CoolMOS™ CFD2	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	31.2A (Tc)	10V	110mOhm @ 12.7A, 10V	4.5V @ 1.3mA	118 nC @ 10 V	±20V	3240 pF @ 100 V	-	34.7W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-FP
TK28N65W,S1F MOSFET N-CH 650V 27.6A TO247 Toshiba Semiconductor and Storage	70	RFQ	Datasheet	DTMOSIV	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	27.6A (Ta)	10V	110mOhm @ 13.8A, 10V	3.5V @ 1.6mA	75 nC @ 10 V	±30V	3000 pF @ 300 V	-	230W (Tc)	150°C (TJ)	-	-	Through Hole	TO-247
TK20N60W,S1VF MOSFET N-CH 600V 20A TO247 Toshiba Semiconductor and Storage	36	RFQ	Datasheet	DTMOSIV	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	20A (Ta)	10V	155mOhm @ 10A, 10V	3.7V @ 1mA	48 nC @ 10 V	±30V	1680 pF @ 300 V	-	165W (Tc)	150°C (TJ)	-	-	Through Hole	TO-247
AIMCQ120R160M1TXTMA1 SIC_DISCRETE Infineon Technologies	100	RFQ	-	CoolSiC™	22-PowerBSOP Module	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	18.6A (Tc)	18V, 20V	200mOhm @ 5A, 20V	5.1V @ 1.5mA	14 nC @ 20 V	+25V, -10V	350 pF @ 800 V	-	125W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-HDSOP-22
SCT055TO65G3 SILICON CARBIDE POWER MOSFET 650 STMicroelectronics	88	RFQ	Datasheet	*	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AIMCQ120R120M1TXTMA1 SIC_DISCRETE Infineon Technologies	100	RFQ	-	CoolSiC™	22-PowerBSOP Module	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	24A (Tc)	18V, 20V	150mOhm @ 7A, 20V	5.1V @ 2.2mA	18 nC @ 20 V	+25V, -10V	458 pF @ 800 V	-	161W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-HDSOP-22
IMZC120R078M2HXKSA1 IMZC120R078M2HXKSA1 Infineon Technologies	90	RFQ	Datasheet	CoolSiC™	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	1200 V	28A (Tc)	15V, 18V	78mOhm @ 9A, 18V	5.1V @ 2.8mA	21 nC @ 18 V	+23V, -7V	700 pF @ 800 V	-	143W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO247-4-17
TK31E60W,S1VX MOSFET N-CH 600V 30.8A TO220 Toshiba Semiconductor and Storage	42	RFQ	Datasheet	DTMOSIV	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	30.8A (Ta)	10V	88mOhm @ 15.4A, 10V	3.7V @ 1.5mA	86 nC @ 10 V	±30V	3000 pF @ 300 V	-	230W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220
PSMN1R1-100CSEJ PSMN1R1-100CSE/SOT8005A/CCPAK1 Nexperia USA Inc.	46	RFQ	Datasheet	-	12-BESOP (0.370", 9.40mm Width), Exposed Pad	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	100 V	430A (Tc)	10V	1.09mOhm @ 25A, 10V	3.6V @ 1mA	509 nC @ 10 V	±20V	36460 pF @ 50 V	-	1.55kW (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	CCPAK1212i
IPQC60T040S7AXTMA1 AUTOMOTIVE_COOLMOS Infineon Technologies	75	RFQ	-	CoolMOS™	22-PowerBSOP Module	Box	Active	N-Channel	MOSFET (Metal Oxide)	600 V	54A (Tc)	12V	40mOhm @ 13A, 12V	4.5V @ 780µA	83 nC @ 12 V	±20V	3128 pF @ 300 V	-	272W (Tc)	-40°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-HDSOP-22
TK35N65W5,S1F MOSFET N-CH 650V 35A TO247 Toshiba Semiconductor and Storage	30	RFQ	Datasheet	DTMOSIV	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	35A (Ta)	10V	95mOhm @ 17.5A, 10V	4.5V @ 2.1mA	115 nC @ 10 V	±30V	4100 pF @ 300 V	-	270W (Tc)	150°C (TJ)	-	-	Through Hole	TO-247
TW107Z65C,S1F G3 650V SIC-MOSFET TO-247-4L 10 Toshiba Semiconductor and Storage	90	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	20A (Tc)	18V	152mOhm @ 10A, 18V	5V @ 1.2mA	21 nC @ 18 V	+25V, -10V	600 pF @ 400 V	-	76W (Tc)	175°C	-	-	Through Hole	TO-247-4L(X)
TK31J60W5,S1VQ MOSFET N-CH 600V 30.8A TO3P Toshiba Semiconductor and Storage	30	RFQ	Datasheet	DTMOSIV	TO-3P-3, SC-65-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	30.8A (Ta)	10V	88mOhm @ 15.4A, 10V	3.7V @ 1.5mA	105 nC @ 10 V	±30V	3000 pF @ 300 V	-	230W (Tc)	150°C (TJ)	-	-	Through Hole	TO-3P(N)
STW65N045M9-4 N-CHANNEL 650 V, 39 MOHM TYP., 5 STMicroelectronics	90	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	54A (Tc)	10V	45mOhm @ 28A, 10V	4.2V @ 250µA	80 nC @ 10 V	±30V	4610 pF @ 400 V	-	312W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247-4

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