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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK35N65W5,S1F

Name: TK35N65W5,S1F
Brand: Toshiba Semiconductor and Storage
SKU: TK35N65W5,S1F
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK35N65W5,S1F

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: TK35N65W5,S1F.pdf

Description:: MOSFET N-CH 650V 35A TO247

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Product details

Overview

TK35N65W5,S1F from Toshiba is a silicon N-channel super-junction MOSFET designed for high-voltage switching in offline SMPS and PFC stages. It delivers 650 V V_DSS, 35 A I_D (DC), R_DS(ON) = 0.08 Ω (typ.), and fast reverse recovery (t_rr = 130 ns) - enabling efficient, compact 65–100 W AC/DC adapters and industrial power supplies.

For engineers reviewing the TK35N65W5,S1F datasheet, TK35N65W5,S1F pinout, TK35N65W5,S1F application, or TK35N65W5,S1F equivalent, key selection criteria include avalanche ruggedness (E_AS = 614 mJ), gate threshold voltage range (3–4.5 V), thermal resistance (R_th(ch-c) = 0.463 °C/W), and TO-247 package compatibility with high-power heatsinking requirements.

Technical Context

This DTMOS™-based device uses a super-junction structure to achieve low conduction loss while maintaining high voltage blocking capability. Its enhancement-mode operation (V_th = 3–4.5 V) ensures reliable gate drive with standard 10 V logic-level controllers, and its low Q_gd/Q_g ratio (57/115 nC) supports high-frequency ZVS/ZCS soft-switching topologies.

The integrated body diode features controlled reverse recovery (t_rr = 130 ns typ., Q_rr = 0.78 µC) and dv/dt ruggedness ≥50 V/ns - critical for reducing EMI and preventing false turn-on in bridge-leg configurations used in LLC resonant converters and active clamp forward designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	650 V - supports universal-input (85–265 VAC) offline converters without derating
R_DS(ON)	0.08 Ω (typ.) - reduces conduction loss in 35 A continuous primary-side switching
I_D (DC)	35 A - enables single-device implementation in mid-power PFC and main switch applications
t_rr	130 ns (typ.) - minimizes diode recovery loss and associated ringing in hard-switched topologies
E_AS	614 mJ - provides robust single-pulse avalanche capability for surge and transient handling
R_th(ch-c)	0.463 °C/W - allows direct mounting to heatsink for thermal management in >100 W designs
Q_g	115 nC - determines gate driver power requirement and switching loss at 100 kHz+ frequencies

Pinout & Package

TK35N65W5,S1F is housed in a TO-247 (JEITA SC-65 / Toshiba 2-16L1A) package with isolated tab (Drain-connected heatsink surface). The three-terminal configuration supports high-current, high-voltage PCB layouts with minimal parasitic inductance.

Pin/Terminal	Circuit Role	Design Meaning
1: Gate	Control input	Receives 10 V gate drive; V_th = 3–4.5 V ensures clean turn-on with standard PWM ICs
2: Drain (Heatsink)	High-voltage output node	Tab is electrically connected to Drain - requires insulated mounting in non-isolated heatsink designs
3: Source	Reference return path	Serves as local ground reference for gate drive and current sensing; low-inductance layout essential

Key Features

Feature	Design Value
Super-junction DTMOS™ structure	Enables 650 V rating with R_DS(ON) 30% lower than planar MOSFETs of same die size
Fast body diode recovery	t_rr = 130 ns (typ.) reduces switching loss and EMI in bridge and totem-pole PFC circuits
Low gate charge ratio	Q_gd/Q_g = 50% improves controllability during Miller plateau and enables higher f_SW
Enhancement-mode gate	V_th = 3–4.5 V ensures safe off-state with 0 V gate bias and stable turn-on at 10 V drive
Avalanche-rated design	E_AS = 614 mJ supports unclamped inductive switching in flyback and forward converters

Applications

Server PSU Primary Switch	Industrial PFC Boost Stage
Use Scenario: High-efficiency 1 kW server power supply operating at 100 kHz with active clamp forward topology. IC Role / Device Role / Timing Role: Main switching FET in primary power stage, handling 35 A DC current at 650 V bus. Use Value: Low R_DS(ON) (0.08 Ω) and low Q_g (115 nC) reduce both conduction and switching losses, improving full-load efficiency by ≥0.8% over prior-generation MOSFETs.	Use Scenario: Three-phase 3 kW industrial motor drive with boost-type active PFC front-end. IC Role / Device Role / Timing Role: Boost switch in continuous conduction mode (CCM), switching at 65 kHz with 35 A peak current. Use Value: Fast t_rr (130 ns) and low Q_rr (0.78 µC) suppress diode-induced voltage spikes, reducing snubber losses and enabling smaller EMI filters.
Telecom Rectifier Module	EV Onboard Charger PFC
Use Scenario: -48 V telecom rectifier with universal AC input and digital control. IC Role / Device Role / Timing Role: Primary-side switch in LLC resonant converter, operating in ZVS region above 200 kHz. Use Value: Low C_oss (90 pF) and Co(er) (130 pF) minimize dead-time losses and improve light-load efficiency.	Use Scenario: 6.6 kW bidirectional OBC using totem-pole PFC with 650 V bus. IC Role / Device Role / Timing Role: High-side switch in totem-pole configuration, requiring controlled body diode conduction during zero-crossing. Use Value: Controlled trr and dv/dt ruggedness (≥50 V/ns) prevent shoot-through and ensure reliable commutation without external SiC diodes.

Server PSU Primary Switch

Industrial PFC Boost Stage

Use Scenario: High-efficiency 1 kW server power supply operating at 100 kHz with active clamp forward topology.

IC Role / Device Role / Timing Role: Main switching FET in primary power stage, handling 35 A DC current at 650 V bus.

Use Value: Low R_DS(ON) (0.08 Ω) and low Q_g (115 nC) reduce both conduction and switching losses, improving full-load efficiency by ≥0.8% over prior-generation MOSFETs.

Use Scenario: Three-phase 3 kW industrial motor drive with boost-type active PFC front-end.

IC Role / Device Role / Timing Role: Boost switch in continuous conduction mode (CCM), switching at 65 kHz with 35 A peak current.

Use Value: Fast t_rr (130 ns) and low Q_rr (0.78 µC) suppress diode-induced voltage spikes, reducing snubber losses and enabling smaller EMI filters.

Telecom Rectifier Module

EV Onboard Charger PFC

Use Scenario: -48 V telecom rectifier with universal AC input and digital control.

IC Role / Device Role / Timing Role: Primary-side switch in LLC resonant converter, operating in ZVS region above 200 kHz.

Use Value: Low C_oss (90 pF) and Co(er) (130 pF) minimize dead-time losses and improve light-load efficiency.

Use Scenario: 6.6 kW bidirectional OBC using totem-pole PFC with 650 V bus.

IC Role / Device Role / Timing Role: High-side switch in totem-pole configuration, requiring controlled body diode conduction during zero-crossing.

Use Value: Controlled trr and dv/dt ruggedness (≥50 V/ns) prevent shoot-through and ensure reliable commutation without external SiC diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW35N65M5	R_DS(ON) = 0.075 Ω (typ.), t_rr = 110 ns, but Q_g = 132 nC - higher gate drive loss	Better diode recovery but less suitable for high-f_SW due to higher Q_g	Prefer when minimizing EMI dominates over gate drive efficiency
IPP65R099C7	R_DS(ON) = 0.099 Ω, E_AS = 420 mJ, TO-247 package - lower avalanche margin	Lower cost but requires additional clamping in high-surge environments	Acceptable where line transients are well-filtered and layout-controlled

Compared with STW35N65M5 and IPP65R099C7, the TK35N65W5,S1F offers superior balance of low R_DS(ON), moderate Q_g, and high E_AS - making it optimal for industrial-grade 650 V SMPS where reliability under overload and surge conditions is prioritized.

Availability

TK35N65W5,S1F is available at Aetrix Electronics and suitable for industrial power supplies, telecom rectifiers, and EV onboard chargers requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for TK35N65W5,S1F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions, with core expertise in silicon power MOSFETs and IGBTs.

The TK35N65W5,S1F belongs to Toshiba's DTMOS™ V super-junction MOSFET product line, engineered specifically for high-efficiency, high-reliability 650 V switching applications in industrial and communications power systems.

FAQ

What is the maximum continuous drain current rating for TK35N65W5,S1F?

The TK35N65W5,S1F has a maximum continuous drain current (I_D) of 35 A at T_c = 25 °C. This rating assumes proper heatsinking - actual usable current decreases with increasing case temperature per the R_th(ch-c) = 0.463 °C/W specification. At T_c = 100 °C, the derated I_D is approximately 22 A.

Does TK35N65W5,S1F have avalanche capability, and how is it specified?

Yes, TK35N65W5,S1F is fully rated for single-pulse avalanche energy: E_AS = 614 mJ (tested per JEDEC JESD24-1). This value is guaranteed under defined conditions (V_DD = 90 V, T_ch = 25 °C, L = 14 mH, R_G = 25 Ω, I_AR = 8.8 A) and supports robust operation during inductive switching events in flyback and forward converters.

What is the gate threshold voltage range for TK35N65W5,S1F, and why does it matter?

The gate threshold voltage (V_th) for TK35N65W5,S1F is specified as 3.0–4.5 V (V_DS = 10 V, I_D = 2.1 mA). This range ensures reliable turn-on with standard 10 V gate drivers while providing noise immunity against spurious turn-on - critical in high-dv/dt power converter environments where gate bounce could cause shoot-through.

Is TK35N65W5,S1F RoHS compliant, and how is compliance indicated on the device marking?

Yes, TK35N65W5,S1F is RoHS compliant. Per Toshiba documentation, an underlined lot number on the device marking indicates [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]. Non-underlined markings indicate lead-containing versions. Customers should verify the specific reel or tray label and consult their Toshiba sales representative for environmental certification documentation.

How does the body diode performance of TK35N65W5,S1F compare to standard MOSFETs in PFC applications?

The TK35N65W5,S1F body diode delivers t_rr = 130 ns (typ.) and Q_rr = 0.78 µC - significantly faster and lower charge than conventional planar MOSFETs. In totem-pole PFC, this reduces reverse recovery loss and associated voltage overshoot, enabling higher efficiency and smaller passive filtering components compared to alternatives without optimized diode characteristics.

TK35N65W5,S1F Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: DTMOSIV

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 35A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 95mOhm @ 17.5A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 2.1mA

Gate Charge (Qg) (Max) @ Vgs:: 115 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 4100 pF @ 300 V

FET Feature:: -

Power Dissipation (Max):: 270W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247

TK35N65W5,S1F FAQ

1.How can I place an order for TK35N65W5,S1F through Aetrix?

Please submit a Request for Quotation (RFQ) for TK35N65W5,S1F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK35N65W5,S1F reliable?

The price and inventory of TK35N65W5,S1F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK35N65W5,S1F is usually 5 days.

3.What payment methods are accepted for TK35N65W5,S1F?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK35N65W5,S1F transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK35N65W5,S1F?

TK35N65W5,S1F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK35N65W5,S1F order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK35N65W5,S1F?

For technical support, including TK35N65W5,S1F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK35N65W5,S1F requirements.

6.How does Aetrix verify that TK35N65W5,S1F is sourced from the original manufacturer or authorized distributors?

All TK35N65W5,S1F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK35N65W5,S1F meets industry standards.

7.What is the process for return or replacement of TK35N65W5,S1F?

All TK35N65W5,S1F units undergo pre-shipment inspection (PSI). If there is an issue with TK35N65W5,S1F, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK35N65W5,S1F part is unused and in its original packaging.

Return procedure for TK35N65W5,S1F:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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