Toshiba Semiconductor and Storage TK31J60W5,S1VQ

Overview

TK31J60W5,S1VQ from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel power MOSFET using DTMOS™ IV super-junction technology, rated for 600 V drain-source voltage and 30.8 A continuous drain current at Tc = 25 °C, with RDS(ON) = 0.082 Ω (typ.) at VGS = 10 V. It serves as a high-efficiency primary-side switching device in offline AC-DC power supplies and industrial SMPS.

For engineers reviewing the TK31J60W5,S1VQ datasheet, TK31J60W5,S1VQ pinout, TK31J60W5,S1VQ application, or TK31J60W5,S1VQ equivalent, key selection criteria include avalanche energy rating (EAS = 437 mJ), fast body diode recovery (trr = 135 ns typ.), gate charge profile (Qg = 105 nC), thermal resistance (Rth(ch-c) = 0.543 °C/W), and TO-3P(N) package suitability for forced-air or heatsink-mounted high-power topologies.

Technical Context

This MOSFET employs Toshiba's DTMOS™ IV process to achieve low RDS(ON) and reduced gate charge without compromising dv/dt ruggedness (≥50 V/ns). Its enhancement-mode operation (Vth = 3.0–4.5 V) enables direct drive from standard PWM controllers without level-shifting.

The integrated fast-recovery body diode supports discontinuous conduction mode (DCM) flyback and LLC resonant converters. Thermal design is enabled by the low channel-to-case resistance and defined mounting torque (0.8 N·m), supporting reliable operation up to Tch = 150 °C.

Key Specifications

Pinout & Package

TK31J60W5,S1VQ is housed in a TO-3P(N) package (JEITA SC-65, Toshiba 2-16C1S), featuring isolated metal tab for drain connection and screw-mount capability. The case serves as the drain terminal and must be electrically insulated from chassis unless system grounding scheme permits common-drain configuration.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STW31N60DM6 and IXTH30N60L2, TK31J60W5,S1VQ delivers the lowest combined conduction–switching loss profile among TO-3P(N)/TO-247 600 V MOSFETs with verified trr and EAS, making it optimal for space-constrained, high-reliability industrial power designs.

Availability

TK31J60W5,S1VQ is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, server & telecom rectifiers, LED streetlight drivers, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for TK31J60W5,S1VQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with decades of expertise in high-voltage MOSFET process technology.

The TK31J60W5,S1VQ belongs to Toshiba's DTMOS™ IV super-junction MOSFET product line, engineered specifically for high-efficiency, high-reliability AC-DC and DC-DC conversion in industrial and infrastructure power systems.

FAQ

What is the maximum continuous drain current rating for TK31J60W5,S1VQ?

The TK31J60W5,S1VQ has a maximum continuous drain current ID of 30.8 A at case temperature Tc = 25 °C. This rating decreases with increasing case temperature per the derating curve in Figure 8.15; at Tc = 100 °C, the usable ID drops to approximately 18 A. Designers must ensure heatsink design maintains Tc within limits to sustain rated current.

Does TK31J60W5,S1VQ include an integrated body diode, and what are its recovery characteristics?

Yes, TK31J60W5,S1VQ features an integrated N-channel body diode with reverse recovery time trr = 135 ns (typ.) at IDR = 15.4 A and dIDR/dt = 100 A/µs. Its Qrr = 0.6 µC (typ.) and Irr = 10 A (typ.) enable efficient operation in flyback and resonant converters where body diode conduction occurs during dead time.

What is the gate threshold voltage range for TK31J60W5,S1VQ, and how does it affect drive circuit design?

The TK31J60W5,S1VQ has a gate threshold voltage Vth of 3.0–4.5 V (measured at VDS = 10 V, ID = 1.5 mA). This range ensures compatibility with standard 5 V logic-level gate drivers and eliminates need for gate voltage boosting, simplifying drive circuitry while maintaining noise immunity against spurious turn-on.

Is TK31J60W5,S1VQ suitable for avalanche-rated applications, and what is its single-pulse energy rating?

Yes, TK31J60W5,S1VQ is fully specified for single-pulse avalanche operation with EAS = 437 mJ (typ.) at Tch = 25 °C. This rating is validated under standardized test conditions (VDD = 90 V, L = 12.9 mH, RG = 25 Ω, IAR = 7.7 A) and supports robustness in unclamped inductive switching scenarios such as PFC choke saturation or transformer leakage spikes.

What package type and mounting specifications apply to TK31J60W5,S1VQ?

TK31J60W5,S1VQ uses the TO-3P(N) package (JEITA SC-65), with drain connected to the metal tab. Mounting torque must be controlled at 0.8 N·m to ensure mechanical integrity and thermal contact without cracking the mold compound. Electrical isolation between drain and heatsink is required unless system grounding architecture explicitly permits direct connection.