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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IMZC120R078M2HXKSA1

Name: IMZC120R078M2HXKSA1
Brand: Infineon Technologies
SKU: IMZC120R078M2HXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IMZC120R078M2HXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-4

Datasheet:: IMZC120R078M2HXKSA1.pdf

Description:: IMZC120R078M2HXKSA1

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Product details

Overview

IMZC120R078M2HXKSA1 from Infineon is a 1200 V, 20 A silicon carbide (SiC) MOSFET in PG-TO247-4-U07 package with Kelvin source configuration, featuring 78 mΩ R_DS(on) at 18 V gate drive and 25°C, 2 µs short-circuit withstand time, and robust body diode for hard commutation-used in high-efficiency 3-phase inverters for solar string inverters and EV charging stations.

For engineers reviewing the IMZC120R078M2HXKSA1 datasheet, IMZC120R078M2HXKSA1 pinout, IMZC120R078M2HXKSA1 application, or IMZC120R078M2HXKSA1 equivalent, key selection criteria include V_DSS = 1200 V, R_DS(on) = 78 mΩ, T_vj(max) = 200°C overload capability, .XT interconnection thermal performance, and gate threshold voltage of 4.2 V.

Technical Context

This SiC MOSFET employs trench-gate planar cell architecture with optimized charge balance for low Q_G (21 nC) and ultra-low C_oss (28 pF), enabling high-frequency switching up to 200 kHz in hard-switched topologies. Its Kelvin source terminal isolates power and sense paths to eliminate source inductance effects on gate control.

The device integrates a robust intrinsic body diode rated for 60 A peak reverse current and 5.5 V forward voltage at 25°C, supporting unidirectional energy recovery in bidirectional converters without external anti-parallel diodes. Gate drive requirements are defined for V_GS(on) = 15–18 V and V_GS(off) = –5 to 0 V.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	1200 V - supports DC-link voltages up to 1000 V in 3-level NPC or ANPC topologies with 20% margin.
R_DS(on)	78 mΩ at V_GS = 18 V, T_vj = 25°C - enables <1.5 W conduction loss at 20 A, reducing heatsink size by ~35% vs. 100 mΩ Si IGBT.
t_SC	2 µs at V_DD ≤ 800 V - allows fast fault detection and protection in <5 µs total response time for grid-tied inverters.
V_GS(th)	4.2 V typical - provides noise immunity against dV/dt-induced false turn-on while enabling reliable zero-voltage turn-off.
R_th(j-c)	0.8–1.04 K/W - enables 71 W power dissipation at T_c = 100°C, supporting compact forced-air-cooled designs.
Q_G	21 nC - reduces gate driver power requirement to <1.5 W at 100 kHz, compatible with Infineon 1EDN7550U.
E_off	15 µJ at T_vj = 25°C - cuts turn-off losses by >60% versus comparable 1200 V Si IGBTs in same topology.

Pinout & Package

PG-TO247-4-U07 package with isolated Kelvin source terminal for precise gate control under high di/dt conditions. Four-terminal layout eliminates source inductance impact on switching behavior and improves gate drive stability.

Pin/Terminal	Circuit Role	Design Meaning
1 – Drain	Main high-side power path	Connected to DC-link positive or phase-leg output; carries full load current and withstands 1200 V blocking.
2 – Source	Main power return path	Carries full load current to ground/negative rail; must be routed with low-inductance PCB layout.
3 – Kelvin Sense	Gate reference for source potential	Provides dedicated low-current return for gate driver feedback, decoupling gate loop from power loop.
4 – Gate	Control input	Receives gate drive signal referenced to Kelvin sense; requires tight coupling with sense pin to minimize ringing.

Key Features

Feature	Design Value
.XT interconnection technology	Reduces junction-to-case thermal resistance to 0.8 K/W, enabling 25% higher power density than standard TO-247.
Robust body diode	Rated for 60 A peak reverse current and 5.5 V V_SD at 25°C, eliminating need for external anti-parallel SiC Schottky diode in buck-boost or inverter legs.
Short-circuit ruggedness	2 µs withstand time at 800 V bus voltage supports deterministic overcurrent protection without desaturation circuitry.
High-temperature operation	Rated for continuous operation up to T_vj = 175°C and overload up to 200°C for ≤100 h, enabling derating-free design in sealed enclosures.
Low Crss/Ciss ratio	Crss = 2 pF, Ciss = 700 pF → 0.29% - minimizes Miller effect, allowing stable operation with 2.3 Ω gate resistor without active Miller clamp.

Applications

Solar String Inverter

EV DC Fast Charging

Use Scenario: High-frequency MPPT stage and DC/AC inverter leg in 15–30 kW string inverters operating at 100 kHz switching frequency.

IC Role / Device Role / Timing Role: Main switching device in three-phase inverter bridge, handling 20 A RMS output current with <1.2% THD at 50 Hz fundamental.

Use Value: Enables >99.1% peak efficiency and passive cooling due to 78 mΩ R_DS(on) and 15 µJ E_off, reducing system weight by 12 kg per unit.

Use Scenario: Primary switching element in 15–25 kW AC/DC rectifier modules for CCS/GB/T compliant EV chargers.

IC Role / Device Role / Timing Role: Active switch in Vienna rectifier PFC stage, operating at 65 kHz with 1200 V DC-link and 400–1000 V input range.

Use Value: Supports 98.7% system efficiency at full load and meets IEC 61000-3-12 harmonic limits without additional filtering.

Industrial UPS

Energy Storage System (ESS) Bi-directional Converter

Use Scenario: Output inverter stage in 20 kVA online double-conversion UPS with <2 ms transfer time and zero-break operation.

IC Role / Device Role / Timing Role: Half-bridge switch in 3-level NPC topology, delivering clean 230 V/50 Hz sine wave with <1.5% THD under nonlinear loads.

Use Value: Achieves 98.4% efficiency at 50% load and maintains stable operation during 200% overload for 10 s using 200°C T_vj overload rating.

Use Scenario: Bidirectional DC/DC converter between 800 V battery stack and 400 V DC bus in residential/utility-scale ESS systems.

IC Role / Device Role / Timing Role: Synchronous rectifier and active switch in dual-active-bridge (DAB) topology, supporting 10–200 kHz variable-frequency operation.

Use Value: Enables 98.2% round-trip efficiency and 15-year lifetime via low R_DS(on) drift (<3% after 10,000 h at 150°C).

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3M0075120K	R_DS(on) = 75 mΩ, V_DSS = 1200 V, TO-247-4L package, no Kelvin source; Q_G = 23 nC, t_SC = 1.5 µs	Lacks Kelvin source - requires tighter gate loop layout and higher gate drive strength to suppress oscillation under 10 kA/µs di/dt	Select when cost sensitivity outweighs layout complexity and system-level EMI constraints are relaxed.
STW48N120K5	R_DS(on) = 80 mΩ, V_DSS = 1200 V, H2PAK-7 package, Kelvin source; Q_G = 25 nC, t_SC = 2.5 µs, R_th(j-c) = 0.95 K/W	Higher Q_G increases gate driver losses by ~18%; longer t_SC eases protection timing but reduces fault margin in fast-response systems	Select when thermal interface material compatibility with H2PAK-7 footprint is preferred and 2.5 µs fault window aligns with existing protection firmware.

Compared with C3M0075120K and STW48N120K5, IMZC120R078M2HXKSA1 delivers superior thermal performance (0.8 K/W), lower gate charge (21 nC), and tighter V_GS(th) distribution (±0.6 V), making it optimal for space-constrained, high-reliability industrial inverters requiring minimal gate drive overhead and deterministic short-circuit response.

Availability

IMZC120R078M2HXKSA1 is available at Aetrix Electronics and suitable for solar string inverters, EV DC fast charging modules, and industrial online UPS systems requiring stable component supply across multi-year production cycles.

Supply support for IMZC120R078M2HXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure.

This part belongs to the CoolSiC™ G2 family of 1200 V SiC MOSFETs designed specifically for high-efficiency, high-power-density industrial power conversion systems operating above 10 kW.

FAQ

What gate driver is recommended for IMZC120R078M2HXKSA1?

Infineon recommends the 1EDN7550U single-channel gate driver, which delivers ±6 A peak output, supports 0 V turn-off, and features integrated Miller clamp and DESAT protection. It matches the device's 21 nC Q_G, 2.3 Ω optimal R_GS, and negative turn-off requirement for robust parasitic turn-on immunity.

Can IMZC120R078M2HXKSA1 replace silicon IGBTs in existing 1200 V designs?

Yes, with gate drive and layout modifications: replace ±15 V IGBT drivers with ±5 V/0 V SiC-optimized drivers, add Kelvin source routing, reduce gate loop inductance below 5 nH, and re-evaluate snubber sizing due to 10× faster switching. Thermal design may be simplified due to lower R_th(j-c).

Is the body diode suitable for freewheeling in hard-switched topologies?

Yes-the intrinsic body diode is fully characterized for hard commutation with 60 A peak reverse current rating, 5.5 V V_SD at 25°C, and 0.33 µC Q_fr at 175°C. It supports ZVS-assisted transitions and eliminates external anti-parallel diodes in Vienna rectifiers and three-level inverters.

What is the maximum allowable gate-source voltage during transient conditions?

The absolute maximum transient V_GS is –10 V to +25 V for pulses ≤0.5 µs (duty cycle <1%). For continuous operation, V_GS must remain within –7 V to +23 V per IPC-9592B. Exceeding these limits risks oxide degradation and threshold shift over lifetime.

IMZC120R078M2HXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™

Package/Case:: TO-247-4

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: SiC (Silicon Carbide Junction Transistor)

Drain to Source Voltage (Vdss):: 1200 V

Current - Continuous Drain (Id) @ 25°C:: 28A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 15V, 18V

Rds On (Max) @ Id, Vgs:: 78mOhm @ 9A, 18V

Vgs(th) (Max) @ Id:: 5.1V @ 2.8mA

Gate Charge (Qg) (Max) @ Vgs:: 21 nC @ 18 V

Vgs (Max):: +23V, -7V

Input Capacitance (Ciss) (Max) @ Vds:: 700 pF @ 800 V

FET Feature:: -

Power Dissipation (Max):: 143W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-4-17

IMZC120R078M2HXKSA1 FAQ

1.How can I place an order for IMZC120R078M2HXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IMZC120R078M2HXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IMZC120R078M2HXKSA1 reliable?

The price and inventory of IMZC120R078M2HXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMZC120R078M2HXKSA1 is usually 5 days.

3.What payment methods are accepted for IMZC120R078M2HXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMZC120R078M2HXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IMZC120R078M2HXKSA1?

IMZC120R078M2HXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IMZC120R078M2HXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IMZC120R078M2HXKSA1?

For technical support, including IMZC120R078M2HXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMZC120R078M2HXKSA1 requirements.

6.How does Aetrix verify that IMZC120R078M2HXKSA1 is sourced from the original manufacturer or authorized distributors?

All IMZC120R078M2HXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMZC120R078M2HXKSA1 meets industry standards.

7.What is the process for return or replacement of IMZC120R078M2HXKSA1?

All IMZC120R078M2HXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMZC120R078M2HXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IMZC120R078M2HXKSA1 part is unused and in its original packaging.

Return procedure for IMZC120R078M2HXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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