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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK20E60W,S1VX

Name: TK20E60W,S1VX
Brand: Toshiba Semiconductor and Storage
SKU: TK20E60W,S1VX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK20E60W,S1VX

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: TK20E60W,S1VX.pdf

Description:: MOSFET N-CH 600V 20A TO220

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Product details

Overview

TK20E60W,S1VX from Toshiba is a silicon N-channel power MOSFET using DTMOS™ super-junction technology, designed for high-voltage switching in offline AC-DC converters and DC-DC regulators. It delivers 600 V V_DSS, 20 A I_D (DC), R_DS(ON) = 0.13 Ω (typ.), and operates with gate threshold voltage of 2.7–3.7 V - enabling efficient, thermally robust operation in industrial power supplies.

For engineers reviewing the TK20E60W,S1VX datasheet, TK20E60W,S1VX pinout, TK20E60W,S1VX application, or TK20E60W,S1VX equivalent, key selection criteria include avalanche energy rating (E_AS = 200 mJ), channel-to-case thermal resistance (R_th(ch-c) = 0.757 °C/W), diode reverse recovery performance (t_rr = 330 ns), and TO-220 package compatibility with heatsink mounting.

Technical Context

This MOSFET employs Toshiba's DTMOS™ IV super-junction structure to achieve low on-resistance without sacrificing switching speed or ruggedness. Its enhancement-mode gate enables direct microcontroller-level drive with V_GS = 10 V, while built-in body diode supports synchronous rectification and flyback snubberless designs.

The device features guaranteed single-pulse avalanche capability (E_AS = 200 mJ at T_ch = 25°C) and high dv/dt immunity (≥50 V/ns), making it suitable for hard-switched topologies where voltage transients are common. Thermal design is supported by explicit R_th(ch-c) and R_th(ch-a) values under defined test conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - supports universal-input offline SMPS up to 400 V DC bus with margin
R_DS(ON)	0.13 Ω (typ.) - reduces conduction loss in 20 A continuous applications
I_D (DC)	20 A - rated for sustained current in TO-220 package with heatsink
E_AS	200 mJ - enables reliable operation under inductive switching stress without external clamping
t_rr	330 ns - limits diode reverse recovery loss in quasi-resonant and LLC converters
Q_g	48 nC - determines gate drive power requirement and switching speed trade-off
R_th(ch-c)	0.757 °C/W - defines minimum heatsink thermal resistance needed to maintain T_ch ≤ 150°C

Pinout & Package

TK20E60W,S1VX is housed in a standard TO-220 through-hole package (TOSHIBA designation: 2-10X1A), with drain connected to the metal tab for direct heatsink mounting. The package weighs 1.93 g and features creepage/clearance compliant with industrial safety standards.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Control terminal; requires 10 V drive for full enhancement; ESD-sensitive
2	Drain (Heatsink)	High-voltage output node; electrically connected to metal tab; must be isolated from chassis unless referenced
3	Source	Power return path and gate reference; forms common node with driver ground in low-side configuration

Key Features

Feature	Design Value
DTMOS™ super-junction structure	Enables 0.13 Ω R_DS(ON) at 600 V without compromising switching speed or avalanche ruggedness
Guaranteed avalanche energy	200 mJ single-pulse rating ensures reliability in inductive load switching without external snubbers
Low Q_gd/Q_gs ratio	22 nC / 11 nC = 2.0 - improves hard-switching efficiency and reduces Miller-induced shoot-through risk
Body diode with controlled t_rr	330 ns reverse recovery time minimizes commutation loss in flyback and resonant topologies
Enhancement-mode gate	V_th = 2.7–3.7 V allows direct drive from 3.3 V/5 V logic with adequate noise margin

Applications

AC-DC Power Adapters	Industrial DC-DC Converters
Use Scenario: 65–150 W universal-input offline flyback converter for medical or industrial equipment. IC Role / Device Role / Timing Role: Primary-side high-voltage switch handling 600 V DC bus and delivering 20 A peak current. Use Value: Low R_DS(ON) reduces conduction loss; avalanche rating eliminates need for TVS clamping on transformer leakage inductance.	Use Scenario: Isolated 48 V input to 12 V/20 A output half-bridge DC-DC converter in factory automation PLCs. IC Role / Device Role / Timing Role: High-side or low-side switching element operating at 100–300 kHz with hard-switched gate drive. Use Value: 0.757 °C/W R_th(ch-c) enables compact heatsinking; 50 V/ns dv/dt immunity prevents false turn-on during cross-conduction.
LED Streetlight Drivers	Telecom Rectifier Modules
Use Scenario: Constant-current 300 W buck-boost LED driver operating from 277 V AC line with PFC front-end. IC Role / Device Role / Timing Role: Secondary-stage switching MOSFET controlling LED string current in high-efficiency topology. Use Value: Body diode t_rr = 330 ns reduces switching loss during freewheeling; TO-220 mechanical robustness supports high-vibration outdoor environments.	Use Scenario: 48 V telecom rectifier module converting -48 V DC input to 12 V/15 A output using active clamp forward topology. IC Role / Device Role / Timing Role: Clamp switch managing reset energy and limiting voltage overshoot across main transformer. Use Value: Guaranteed E_AS = 200 mJ absorbs clamp energy reliably; V_GSS = ±30 V withstands gate drive transients in noisy telecom backplanes.

AC-DC Power Adapters

Industrial DC-DC Converters

Use Scenario: 65–150 W universal-input offline flyback converter for medical or industrial equipment.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch handling 600 V DC bus and delivering 20 A peak current.

Use Value: Low R_DS(ON) reduces conduction loss; avalanche rating eliminates need for TVS clamping on transformer leakage inductance.

Use Scenario: Isolated 48 V input to 12 V/20 A output half-bridge DC-DC converter in factory automation PLCs.

IC Role / Device Role / Timing Role: High-side or low-side switching element operating at 100–300 kHz with hard-switched gate drive.

Use Value: 0.757 °C/W R_th(ch-c) enables compact heatsinking; 50 V/ns dv/dt immunity prevents false turn-on during cross-conduction.

LED Streetlight Drivers

Telecom Rectifier Modules

Use Scenario: Constant-current 300 W buck-boost LED driver operating from 277 V AC line with PFC front-end.

IC Role / Device Role / Timing Role: Secondary-stage switching MOSFET controlling LED string current in high-efficiency topology.

Use Value: Body diode t_rr = 330 ns reduces switching loss during freewheeling; TO-220 mechanical robustness supports high-vibration outdoor environments.

Use Scenario: 48 V telecom rectifier module converting -48 V DC input to 12 V/15 A output using active clamp forward topology.

IC Role / Device Role / Timing Role: Clamp switch managing reset energy and limiting voltage overshoot across main transformer.

Use Value: Guaranteed E_AS = 200 mJ absorbs clamp energy reliably; V_GSS = ±30 V withstands gate drive transients in noisy telecom backplanes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM60FD	R_DS(ON) = 0.22 Ω (typ.), lower avalanche rating (E_AS = 120 mJ), faster t_rr (250 ns)	Better suited for higher-frequency ZVS designs where conduction loss is secondary to switching loss	Select when prioritizing reduced gate charge over conduction loss in <200 kHz operation
IPP60R190C7	R_DS(ON) = 0.19 Ω (typ.), CoolMOS™ C7 process, higher Q_g (53 nC), no specified E_AS rating	Optimized for resonant LLC and PFC stages requiring soft-switching behavior	Prefer for designs with zero-voltage switching; avoid in hard-switched flyback where avalanche stress is present

Compared with STP20NM60FD and IPP60R190C7, TK20E60W,S1VX offers superior conduction efficiency and proven avalanche ruggedness for hard-switched industrial power supplies, at the cost of slightly higher gate charge and slower diode recovery - making it optimal for 50–150 kHz offline SMPS where thermal management and reliability dominate.

Availability

TK20E60W,S1VX is available at Aetrix Electronics and suitable for AC-DC power adapters, industrial DC-DC converters, and LED streetlight drivers requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for TK20E60W,S1VX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions, with decades of expertise in high-reliability discrete components.

The TK20E60W,S1VX belongs to Toshiba's DTMOS™ IV super-junction MOSFET product line, engineered specifically for high-efficiency, high-voltage switching in industrial and commercial power conversion systems.

FAQ

What is the maximum continuous drain current rating for TK20E60W,S1VX?

The TK20E60W,S1VX has a maximum continuous drain current (I_D) of 20 A at T_c = 25°C. This rating assumes proper heatsinking to maintain channel temperature ≤150°C. Derating is required above 25°C case temperature per the R_th(ch-c) = 0.757 °C/W specification. At T_c = 100°C, the usable I_D drops to approximately 11 A.

Does TK20E60W,S1VX have an integrated body diode, and what are its key parameters?

Yes, TK20E60W,S1VX includes a monolithic body diode with V_DSF = −1.7 V (max) at I_DR = 20 A and reverse recovery time t_rr = 330 ns (typ.) at I_DR = 10 A. Its Q_rr is 2.9 µC (typ.), and it supports dv/dt ruggedness ≥15 V/ns - critical for minimizing commutation loss in flyback and forward converters.

What gate drive voltage is required to fully enhance TK20E60W,S1VX?

TK20E60W,S1VX is an enhancement-mode MOSFET with V_th = 2.7–3.7 V. To achieve R_DS(ON) = 0.13 Ω (typ.), a V_GS of 10 V is specified in the datasheet. While it conducts at 5 V, full enhancement and minimal on-resistance require 10 V drive - compatible with standard gate drivers like TC4420 or UCC27324.

Is TK20E60W,S1VX suitable for avalanche-prone circuits like flyback converters?

Yes, TK20E60W,S1VX is explicitly rated for single-pulse avalanche energy E_AS = 200 mJ at T_ch = 25°C. This makes it suitable for flyback converters where transformer leakage inductance causes voltage spikes exceeding V_DSS. Its guaranteed avalanche capability eliminates the need for external clamping in many designs, improving reliability and reducing BOM count.

What is the thermal resistance from channel to case for TK20E60W,S1VX, and how does it impact heatsink selection?

The channel-to-case thermal resistance R_th(ch-c) of TK20E60W,S1VX is 0.757 °C/W. For a 20 A load at 0.13 Ω R_DS(ON), conduction loss is ~52 W - requiring a heatsink with R_th(c-s) + R_th(s-a) ≤ 1.4 °C/W to hold T_ch ≤ 150°C. This value directly determines minimum heatsink size and interface material requirements.

TK20E60W,S1VX Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: DTMOSIV

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 155mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 3.7V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 48 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1680 pF @ 300 V

FET Feature:: -

Power Dissipation (Max):: 165W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

TK20E60W,S1VX FAQ

1.How can I place an order for TK20E60W,S1VX through Aetrix?

Please submit a Request for Quotation (RFQ) for TK20E60W,S1VX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK20E60W,S1VX reliable?

The price and inventory of TK20E60W,S1VX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK20E60W,S1VX is usually 5 days.

3.What payment methods are accepted for TK20E60W,S1VX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK20E60W,S1VX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK20E60W,S1VX?

TK20E60W,S1VX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK20E60W,S1VX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK20E60W,S1VX?

For technical support, including TK20E60W,S1VX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK20E60W,S1VX requirements.

6.How does Aetrix verify that TK20E60W,S1VX is sourced from the original manufacturer or authorized distributors?

All TK20E60W,S1VX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK20E60W,S1VX meets industry standards.

7.What is the process for return or replacement of TK20E60W,S1VX?

All TK20E60W,S1VX units undergo pre-shipment inspection (PSI). If there is an issue with TK20E60W,S1VX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK20E60W,S1VX part is unused and in its original packaging.

Return procedure for TK20E60W,S1VX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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