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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN1R1-100CSEJ

Name: PSMN1R1-100CSEJ
Brand: Nexperia USA Inc.
SKU: PSMN1R1-100CSEJ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN1R1-100CSEJ

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: 12-BESOP (0.370", 9.40mm Width), Exposed Pad

Datasheet:: PSMN1R1-100CSEJ.pdf

Description:: PSMN1R1-100CSE/SOT8005A/CCPAK1

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PSMN1R1-100CSEJ from Nexperia is an N-channel enhancement-mode power MOSFET in a CCPAK1212i (SOT8005A) copper-clip package, rated for 100 V V_DS, 1.09 mΩ R_DS(on) at 25 °C, and qualified to 175 °C junction temperature. It delivers 430 A continuous drain current at T_mb = 25 °C and features enhanced Safe Operating Area (SOA) for robust linear-mode operation in hot-swap and soft-start circuits.

For engineers reviewing the PSMN1R1-100CSEJ datasheet, PSMN1R1-100CSEJ pinout, PSMN1R1-100CSEJ application, or PSMN1R1-100CSEJ equivalent, this device is selected for high-current 48 V backplane load switching where low conduction loss, avalanche ruggedness (1630 mJ), and top-side cooling compatibility are critical design requirements.

Technical Context

This MOSFET employs an inverted CCPAK1212i package with drain-connected mounting base for direct thermal coupling to heatsinks, enabling efficient top-side cooling. Its SOA is fully optimized for linear-mode stress during inrush current events-supporting non-repetitive avalanche energy of 1630 mJ at 117 A and sustaining 3142 A peak pulsed drain current (t_p ≤ 10 µs).

Gate drive characteristics include 4.3 V gate plateau voltage and 48.2 nC typical Q_GD, ensuring controlled turn-on/turn-off transitions in high-dV/dt environments. Thermal resistance from junction to mounting base is as low as 0.075 K/W, enabling high-power operation with minimal thermal derating when mounted on copper-clad PCBs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage for 48 V telecom backplane systems with safety margin
R_DS(on)	0.87–1.09 mΩ @ 25 °C - Enables <1 W conduction loss at 300 A, critical for efficiency in high-current load switches
I_D (cont.)	430 A @ T_mb = 25 °C - Validated continuous current capability under real-world thermal mounting conditions
E_AS	1630 mJ - Non-repetitive avalanche energy rating ensures survivability during unclamped inductive turn-off transients
R_th(j-mb)	0.075 K/W - Ultra-low junction-to-mounting-base thermal resistance enables direct heatsink attachment without thermal interface material
Q_GD	14.5–111 nC - Gate-drain charge range supports precise Miller-effect control for stable switching in hot-swap controllers
V_GS(th)	2.0–3.6 V @ 25 °C - Threshold voltage window compatible with standard 3.3 V and 5 V gate drivers
t_r/t_f	91 ns / 131 ns - Fast switching transitions minimize switching losses in high-frequency soft-start applications

Pinout & Package

The PSMN1R1-100CSEJ uses the JEDEC-qualified CCPAK1212i (SOT8005A) surface-mount copper-clip package: 12 mm × 12 mm × 2.5 mm body, 2.0 mm terminal pitch, with exposed drain-connected mounting base for top-side thermal management.

Pin/Terminal	Circuit Role	Design Meaning
1–5	Source	Five parallel source terminals reduce source inductance and improve current sharing in high-di/dt load-switching
6	Gate	Single gate input with 1.27 Ω typical gate resistance-optimized for stability with 5 Ω external gate resistor
7–12	Drain	Six parallel drain terminals plus mounting base provide ultra-low-inductance, high-current drain path to PCB plane
mb	Mounting Base	Drain-connected thermal pad; electrically and thermally ties to all drain terminals for simultaneous conduction and cooling

Key Features

Feature	Design Value
Enhanced SOA for linear mode	Validated safe operation across full V_DS-I_D quadrant up to 175 °C-enables reliable soft-start without external current limiting
CCPAK1212i copper-clip construction	Reduces package parasitic inductance by >50% vs. TO-263; improves EMI performance and dV/dt immunity in hot-swap rails
Inverted top-side cooling	Mounting base faces component side-allows direct heatsink contact without board cutouts or thermal vias
JEDEC SOT8005A standardization	Ensures second-source availability and footprint compatibility across qualified suppliers for supply chain resilience
175 °C qualification	Extended temperature rating supports operation in sealed telecom enclosures and industrial power modules without derating

Applications

Hot Swap Controllers

48 V Telecom Backplanes

Use Scenario: Insertion of line cards into live 48 V backplane without causing bus voltage sag or controller fault.

IC Role / Device Role / Timing Role: Primary power switch handling full system current (up to 430 A), operating in linear mode during controlled ramp-up.

Use Value: Low R_DS(on) minimizes I²R heating during ramp; enhanced SOA prevents thermal runaway during 100–500 ms soft-start windows.

Use Scenario: Isolation and protection of redundant 48 V power feeds in carrier-grade routers and switches.

IC Role / Device Role / Timing Role: Load switch providing bidirectional fault isolation and e-fuse functionality via integrated avalanche ruggedness.

Use Value: 1630 mJ avalanche energy rating allows single-event overvoltage survival without crowbar circuitry or fuses.

High-Current Load Switches

Industrial Soft-Start Modules

Use Scenario: Controlled energization of large capacitive loads (e.g., server PSU inputs, motor drives) to limit inrush.

IC Role / Device Role / Timing Role: Main switching element in discrete or controller-assisted soft-start stage, conducting full load current after ramp completion.

Use Value: 0.075 K/W R_th(j-mb) enables sustained 300+ A operation with <25 °C temperature rise using only a 25 mm × 25 mm heatsink.

Use Scenario: Gradual voltage ramp for high-power DC-DC converter inputs in factory automation PLCs.

IC Role / Device Role / Timing Role: Linear-mode pass device regulated by external op-amp or dedicated soft-start IC to control dV/dt.

Use Value: Fully characterized SOA curve (Fig. 3) permits precise thermal design for 1–5 s ramp durations without derating or thermal shutdown.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXTH120N10L2	TO-247 package; higher R_DS(on) (1.2 mΩ); lower I_D (120 A); no top-side cooling	Requires bottom-side heatsinking and larger PCB area; unsuitable for space-constrained 48 V modules	Select only if legacy TO-247 footprint must be retained and thermal budget allows 2× R_DS(on) loss
STW100N10F7	PowerFLAT 8x8 package; 1.1 mΩ R_DS(on); 300 A rating; no avalanche rating published	Lacks documented E_AS specification-requires external clamping for inductive turn-off in hot-swap	Preferable for cost-sensitive designs where avalanche stress is absent, but not for telecom backplane protection

Compared with IXTH120N10L2 and STW100N10F7, the PSMN1R1-100CSEJ uniquely combines ultra-low R_DS(on), JEDEC-standardized top-side cooling, and guaranteed avalanche ruggedness-making it the only option qualified for linear-mode hot-swap in compact 48 V infrastructure.

Availability

PSMN1R1-100CSEJ is available at Aetrix Electronics and suitable for 48 V telecom backplanes, industrial soft-start modules, and high-current e-fuse implementations requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for PSMN1R1-100CSEJ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors-high-performance, reliable components for automotive, industrial, and computing applications.

The PSMN1R1-100CSEJ belongs to Nexperia's Application Specific MOSFETs (ASFETs) portfolio, engineered specifically for hot-swap and soft-start systems demanding extreme SOA, low R_DS(on), and robust thermal performance in copper-clip packages.

FAQ

What is the maximum continuous drain current for PSMN1R1-100CSEJ at 100 °C mounting base temperature?

The datasheet specifies 430 A continuous drain current at T_mb = 25 °C (Fig. 2), but current derates with mounting base temperature. At T_mb = 100 °C, the normalized power dissipation curve (Fig. 1) shows ~65% derating, yielding approximately 280 A continuous current-limited by thermal design, PCB copper area, and heatsink interface quality.

Does PSMN1R1-100CSEJ require a gate driver with negative turn-off capability?

No. The device has a V_GS rating of ±20 V and operates reliably with standard 0 V to 10 V gate drive. Its 4.3 V gate plateau voltage and 1.27 Ω internal gate resistance ensure stable switching with common 5 Ω external gate resistors-no negative bias or active Miller clamp is required for typical hot-swap use cases.

Can PSMN1R1-100CSEJ be used in parallel configurations?

Yes-its positive R_DS(on) temperature coefficient (Fig. 12) and low gate threshold variation enable inherent current sharing. However, layout symmetry (matched trace inductance/resistance to all source/gate terminals) and individual gate resistors are mandatory. Parallel operation beyond two devices requires thermal monitoring due to mounting base thermal coupling.

Is the CCPAK1212i package RoHS and REACH compliant?

Yes. Nexperia confirms full RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006 compliance for the CCPAK1212i package. Lead-free soldering is supported per J-STD-020D.3 reflow profile, with peak temperature up to 260 °C (Table 5, T_sld(M)).

PSMN1R1-100CSEJ Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: 12-BESOP (0.370", 9.40mm Width), Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 430A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.09mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 3.6V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 509 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 36460 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 1.55kW (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: CCPAK1212i

PSMN1R1-100CSEJ FAQ

1.How can I place an order for PSMN1R1-100CSEJ through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN1R1-100CSEJ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN1R1-100CSEJ reliable?

The price and inventory of PSMN1R1-100CSEJ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN1R1-100CSEJ is usually 5 days.

3.What payment methods are accepted for PSMN1R1-100CSEJ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN1R1-100CSEJ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN1R1-100CSEJ?

PSMN1R1-100CSEJ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN1R1-100CSEJ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN1R1-100CSEJ?

For technical support, including PSMN1R1-100CSEJ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN1R1-100CSEJ requirements.

6.How does Aetrix verify that PSMN1R1-100CSEJ is sourced from the original manufacturer or authorized distributors?

All PSMN1R1-100CSEJ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN1R1-100CSEJ meets industry standards.

7.What is the process for return or replacement of PSMN1R1-100CSEJ?

All PSMN1R1-100CSEJ units undergo pre-shipment inspection (PSI). If there is an issue with PSMN1R1-100CSEJ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN1R1-100CSEJ part is unused and in its original packaging.

Return procedure for PSMN1R1-100CSEJ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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