Toshiba Semiconductor and Storage TK28N65W,S1F

Overview

TK28N65W,S1F from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel super-junction MOSFET designed for high-voltage switching in offline power supplies. It delivers 650 V V_DSS, 27.6 A I_D (DC), and ultra-low R_DS(ON) of 0.094 Ω (typ.) at V_GS = 10 V, enabling high-efficiency operation in 65–100 W AC-DC adapters and industrial SMPS.

For engineers reviewing the TK28N65W,S1F datasheet, TK28N65W,S1F pinout, TK28N65W,S1F application, or TK28N65W,S1F equivalent, key selection criteria include avalanche ruggedness (E_AS = 444 mJ), fast switching (t_on = 60 ns, t_off = 130 ns), and gate threshold voltage range (2.5–3.5 V) compatible with standard 10 V gate drivers.

Technical Context

This DTMOS™ IV-generation device uses a charge-balanced super-junction structure to achieve low conduction loss without sacrificing switching speed. Its optimized cell layout reduces Q_gd/Q_g ratio (32/75 nC), improving dv/dt immunity and reducing Miller-induced turn-on risk in hard-switched topologies.

The TO-247 package provides low R_th(ch-c) (0.543 °C/W) and integrated heatsink-connected drain terminal, supporting continuous operation at T_ch ≤ 150 °C under forced-air cooling. Diode reverse recovery characteristics (t_rr = 410 ns, Q_rr = 3.5 µC) are specified for synchronous rectification evaluation in LLC resonant converters.

Key Specifications

Pinout & Package

TK28N65W,S1F is housed in a TO-247 (JEITA SC-65, Toshiba 2-16L1A) package with isolated mounting hole and heatsink-connected drain terminal. The 3-pin configuration supports direct thermal coupling to external heatsinks via the drain tab.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Compared with STP28N65M5 and IPP65R110CFD7, the TK28N65W,S1F offers the lowest R_DS(ON) and best Q_gd/Q_g ratio among 650 V TO-247 MOSFETs, making it optimal for high-efficiency, high-frequency primary-side switching where thermal headroom is constrained.

Availability

TK28N65W,S1F is available at Aetrix Electronics and suitable for server auxiliary power supplies, industrial AC-DC adapters, and LED streetlight drivers requiring stable component supply across multi-year production cycles.

Supply support for TK28N65W,S1F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs for industrial, automotive, and consumer applications.

The TK28N65W,S1F belongs to Toshiba's DTMOS™ IV super-junction MOSFET product line, engineered specifically for high-efficiency, high-reliability offline power conversion in compact form factors.

FAQ

What is the maximum continuous drain current rating for TK28N65W,S1F at case temperature 100°C?

The TK28N65W,S1F has a DC drain current rating of 27.6 A at T_c = 25 °C. At T_c = 100 °C, derating applies per the Safe Operating Area curve (Fig. 8.17); the maximum continuous I_D is approximately 16.5 A, based on linear derating from 27.6 A at 25 °C to zero at 150 °C channel temperature with R_th(ch-c) = 0.543 °C/W.

Does TK28N65W,S1F have an integrated body diode, and what are its reverse recovery characteristics?

Yes, TK28N65W,S1F includes a parasitic body diode inherent to its vertical N-channel structure. Its reverse recovery time t_rr is 410 ns (typ.) at I_DR = 13.8 A and dI_DR/dt = 50 A/µs, with Q_rr = 3.5 µC and peak I_rr = 17 A. These values are measured under standardized conditions and support use in quasi-resonant flyback and LLC secondary-side synchronous rectification.

Is TK28N65W,S1F suitable for use in avalanche mode, and what is its guaranteed single-pulse energy rating?

Yes, TK28N65W,S1F is rated for single-pulse avalanche operation with guaranteed E_AS = 444 mJ at T_ch = 25 °C (V_DD = 90 V, L = 16 mH, R_G = 25 Ω, I_AR = 7 A). This allows robust operation in inductive switching circuits like PFC boost stages without external clamping components, provided channel temperature remains within 150 °C.

What is the gate threshold voltage range for TK28N65W,S1F, and how does it affect drive compatibility?

The TK28N65W,S1F has a gate threshold voltage V_th of 2.5–3.5 V (V_DS = 10 V, I_D = 1.6 mA), ensuring reliable turn-on with standard 3.3 V or 5 V logic-level controllers. This range avoids unintended conduction at low gate voltages while remaining fully enhanced at 10 V drive, matching industry-standard gate drivers such as the TC4420 or UCC27611.

How does the TO-247 package of TK28N65W,S1F impact thermal performance in high-power applications?

The TO-247 package of TK28N65W,S1F delivers R_th(ch-c) = 0.543 °C/W, enabling efficient heat transfer from the silicon die to an external heatsink. When mounted with thermal paste and 0.8 N·m torque, it supports continuous 27.6 A operation at T_c = 25 °C. For ambient-cooled designs, R_th(ch-a) = 50 °C/W limits usable power to ~4.6 W without forced air, confirming necessity of heatsinking above 5 W dissipation.