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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
TK5Q65W,S1Q MOSFET N-CH 650V 5.2A IPAK Toshiba Semiconductor and Storage	55	RFQ	-	DTMOSIV	TO-251-3 Stub Leads, IPAK	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	5.2A (Ta)	10V	1.22Ohm @ 2.6A, 10V	3.5V @ 170µA	10.5 nC @ 10 V	±30V	380 pF @ 300 V	-	60W (Tc)	150°C (TJ)	-	-	Through Hole	IPAK
TK9A45D(STA4,Q,M) MOSFET N-CH 450V 9A TO220SIS Toshiba Semiconductor and Storage	50	RFQ	Datasheet	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	450 V	9A (Ta)	10V	770mOhm @ 4.5A, 10V	4V @ 1mA	16 nC @ 10 V	±30V	800 pF @ 25 V	-	40W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
PSMN2R6-80YSFX PSMN2R6-80YSF/SOT1023/4 LEADS Nexperia USA Inc.	57	RFQ	Datasheet	-	SOT-1023, 4-LFPAK	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	80 V	231A (Ta)	10V	2.4mOhm @ 25A, 10V	4V @ 1mA	127 nC @ 10 V	±20V	8191 pF @ 40 V	-	294W (Ta)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	LFPAK56, Power-SO8
TK5A53D(STA4,Q,M) MOSFET N-CH 525V 5A TO220SIS Toshiba Semiconductor and Storage	50	RFQ	Datasheet	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	525 V	5A (Ta)	10V	1.5Ohm @ 2.5A, 10V	4.4V @ 1mA	11 nC @ 10 V	±30V	540 pF @ 25 V	-	35W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK6A50D(STA4,Q,M) MOSFET N-CH 500V 6A TO220SIS Toshiba Semiconductor and Storage	30	RFQ	Datasheet	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	6A (Ta)	10V	1.4Ohm @ 3A, 10V	4.4V @ 1mA	11 nC @ 10 V	±30V	540 pF @ 25 V	-	35W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
ISP16DP10LMAXTSA1 ISP16DP10LMAXTSA1 Infineon Technologies	1,000	RFQ	Datasheet	OptiMOS™	TO-261-4, TO-261AA	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	100 V	2.3A (Ta), 3.9A (Tc)	4.5V, 10V	167mOhm @ 2.2A, 10V	2V @ 1.037mA	55 nC @ 10 V	±20V	2100 pF @ 50 V	-	1.8W (Ta), 5W (Tc)	-55°C ~ 150°C (TJ)	Automotive	AEC-Q101	Surface Mount	PG-SOT223-4-21
TK6Q65W,S1Q MOSFET N-CH 650V 5.8A IPAK Toshiba Semiconductor and Storage	74	RFQ	Datasheet	DTMOSIV	TO-251-3 Stub Leads, IPAK	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	5.8A (Ta)	10V	1.05Ohm @ 2.9A, 10V	3.5V @ 180µA	11 nC @ 10 V	±30V	390 pF @ 300 V	-	60W (Tc)	150°C (TJ)	-	-	Through Hole	IPAK
TK3R1E04PL,S1X MOSFET N-CH 40V 100A TO220 Toshiba Semiconductor and Storage	51	RFQ	Datasheet	U-MOSIX-H	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	40 V	100A (Tc)	4.5V, 10V	3.8mOhm @ 30A, 4.5V	2.4V @ 500µA	63.4 nC @ 10 V	±20V	4670 pF @ 20 V	-	87W (Tc)	175°C (TJ)	-	-	Through Hole	TO-220
FK4B01120LE SINGLE NCH MOSFET, 12V, 3.9A 17M Nuvoton Technology Corporation	1,000	RFQ	Datasheet	-	4-XFLGA, CSP	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	12 V	3.9A (Ta)	1.5V, 4.5V	24mOhm @ 1.5A, 4.5V	1V @ 394µA	7 nC @ 4.5 V	±8V	490 pF @ 10 V	-	370mW (Ta)	-40°C ~ 85°C (TA)	Automotive	AEC-Q101	Surface Mount	4-CSP (1x1)
TK8A65W,S5X MOSFET N-CH 650V 7.8A TO220SIS Toshiba Semiconductor and Storage	40	RFQ	Datasheet	DTMOSIV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	7.8A (Ta)	10V	650mOhm @ 3.9A, 10V	3.5V @ 300µA	16 nC @ 10 V	±30V	570 pF @ 300 V	-	30W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK560A60Y,S4X MOSFET N-CH 600V 7A TO220SIS Toshiba Semiconductor and Storage	50	RFQ	Datasheet	DTMOSV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	7A (Tc)	10V	560mOhm @ 3.5A, 10V	4V @ 240µA	14.5 nC @ 10 V	±30V	380 pF @ 300 V	-	30W	150°C (TJ)	-	-	Through Hole	TO-220SIS
DMT4003SCT MOSFET N-CH 40V 205A TO220AB Diodes Incorporated	46	RFQ	Datasheet	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	40 V	205A (Tc)	10V	3mOhm @ 90A, 10V	4V @ 250µA	75.6 nC @ 10 V	±20V	6865 pF @ 20 V	-	156W	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220-3
TK5A60D(STA4,Q,M) MOSFET N-CH 600V 5A TO220SIS Toshiba Semiconductor and Storage	41	RFQ	Datasheet	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	5A (Ta)	10V	1.43Ohm @ 2.5A, 10V	4.4V @ 1mA	16 nC @ 10 V	±30V	700 pF @ 25 V	-	35W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK8A45D(STA4,Q,M) MOSFET N-CH 450V 8A TO220SIS Toshiba Semiconductor and Storage	50	RFQ	Datasheet	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	450 V	8A (Ta)	10V	900mOhm @ 4A, 10V	4.4V @ 1mA	16 nC @ 10 V	±30V	700 pF @ 25 V	-	35W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK7A55D(STA4,Q,M) MOSFET N-CH 550V 7A TO220SIS Toshiba Semiconductor and Storage	45	RFQ	Datasheet	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	550 V	7A (Ta)	10V	1.25Ohm @ 3.5A, 10V	4.4V @ 1mA	16 nC @ 10 V	±30V	700 pF @ 25 V	-	35W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK3A65D(STA4,Q,M) MOSFET N-CH 650V 3A TO220SIS Toshiba Semiconductor and Storage	26	RFQ	Datasheet	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	3A (Ta)	10V	2.25Ohm @ 1.5A, 10V	4.4V @ 1mA	11 nC @ 10 V	±30V	540 pF @ 25 V	-	35W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK5A65DA(STA4,Q,M) MOSFET N-CH 650V 4.5A TO220SIS Toshiba Semiconductor and Storage	32	RFQ	Datasheet	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	4.5A (Ta)	10V	1.67Ohm @ 2.3A, 10V	4.4V @ 1mA	16 nC @ 10 V	±30V	700 pF @ 25 V	-	35W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK5A65D(STA4,Q,M) MOSFET N-CH 650V 5A TO220SIS Toshiba Semiconductor and Storage	28	RFQ	-	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	5A (Ta)	10V	1.43Ohm @ 2.5A, 10V	4V @ 1mA	16 nC @ 10 V	±30V	800 pF @ 25 V	-	40W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
STF80N600K6 N-CHANNEL 800 V, 515 MOHM TYP., STMicroelectronics	26	RFQ	Datasheet	ECOPACK®	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	7A (Tc)	10V	600mOhm @ 3A, 10V	4V @ 100µA	10.7 nC @ 10 V	±30V	540 pF @ 400 V	-	23W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220FP
DMTH4005SCT MOSFET N-CH 40V 100A TO220AB Diodes Incorporated	50	RFQ	Datasheet	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	40 V	100A (Tc)	10V	4.7mOhm @ 50A, 10V	4V @ 250µA	49.1 nC @ 10 V	±20V	3062 pF @ 20 V	-	2.8W (Ta), 125W (Tc)	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-220-3

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