Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Toshiba Semiconductor and Storage TK5A53D(STA4,Q,M)

Part No.:
TK5A53D(STA4,Q,M)
Manufacturer:
Toshiba Semiconductor and Storage
Category:
FETs, MOSFETs
Package:
TO-220-3 Full Pack
Datasheet:
AetrixTK5A53D(STA4,Q,M).pdf
Description:
MOSFET N-CH 525V 5A TO220SIS
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:50

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

TK5A53D(STA4,Q,M) from Toshiba is a silicon N-channel power MOSFET in the π-MOSⅦ family, designed for high-voltage switching regulator applications. It delivers 5 A continuous drain current, 525 V drain-source breakdown voltage, and low 1.2 Ω (typ.) RDS(ON) at VGS = 10 V, enabling efficient DC-DC conversion in industrial SMPS designs.

For engineers reviewing the TK5A53D(STA4,Q,M) datasheet, TK5A53D(STA4,Q,M) pinout, TK5A53D(STA4,Q,M) application, or TK5A53D(STA4,Q,M) equivalent, key selection criteria include avalanche ruggedness (158 mJ single-pulse), gate threshold range (2.4–4.4 V), thermal resistance (3.57 °C/W channel-to-case), and SC-67 package compatibility with high-power board layouts.

Technical Context

This MOSFET employs enhancement-mode operation with a guaranteed Vth window of 2.4–4.4 V at 1 mA, ensuring reliable turn-on under varied gate drive conditions. Its 540 pF input capacitance and 5 nC Qgd support fast switching in hard-switched topologies while maintaining manageable EMI.

The device features integrated body diode with 1000 ns reverse recovery time and 6 μC Qrr, suitable for freewheeling in flyback and forward converters. Avalanche-rated to 158 mJ (EAS) at Tch = 25°C, it withstands transient overvoltage events without external snubbers in properly derated designs.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS525 V - Supports input stages up to 380 V AC rectified systems with margin
RDS(ON)1.2 Ω (typ.) at VGS = 10 V - Enables <1.5 W conduction loss at 5 A DC
ID (continuous)5 A - Rated for sustained output currents in 60–100 W SMPS designs
EAS158 mJ - Withstands single-event inductive energy spikes without failure
Rth(ch-c)3.57 °C/W - Requires minimum 10 cm² copper pour for thermal management at full load
|Yfs|2.8 S (typ.) - High transconductance improves gate drive efficiency and linearity
Qg11 nC - Determines gate driver current requirement (~1.1 A peak for 10 ns rise)

Pinout & Package

TK5A53D(STA4,Q,M) uses the SC-67 (TOSHIBA 2-10U1B) through-hole package with 3 leads and 1.7 g typical mass. Thermal performance relies on direct case-to-heatsink contact via the drain-connected tab.

Pin/Terminal Circuit Role Design Meaning
1GateControl terminal; requires 10 V min for full enhancement; ±30 V absolute max rating
2DrainHigh-voltage power terminal; electrically connected to metal tab for heatsinking
3SourceReference node for gate drive; connects to power ground in common-source configuration

Key Features

Feature Design Value
Low RDS(ON)1.2 Ω typ. reduces conduction losses in high-current, medium-voltage SMPS
High |Yfs|2.8 S typ. enables stable gain and predictable switching behavior across temperature
Avalanche-rated158 mJ single-pulse energy handling eliminates need for external clamping in many flyback designs
Enhancement-mode Vth2.4–4.4 V range ensures robust turn-on with standard 5 V or 12 V gate drivers
Low IDSS10 μA max at 525 V supports standby leakage compliance in energy-efficient power supplies

Applications

Industrial Switch-Mode Power Supplies AC-DC Adapters for Office Equipment

Use Scenario: 75 W open-frame power supply for PLC I/O modules operating from 85–264 V AC input.

IC Role / Device Role / Timing Role: Primary-side switching transistor in discontinuous conduction mode (DCM) flyback topology.

Use Value: 525 V VDSS and 158 mJ EAS allow safe operation during line surges and transformer reset spikes without snubber redesign.

Use Scenario: Compact 65 W desktop PC adapter with universal input and active PFC front-end.

IC Role / Device Role / Timing Role: Main switch in the PFC boost stage, switching at 65 kHz.

Use Value: 1.2 Ω RDS(ON) minimizes conduction loss at 5 A average current, improving full-load efficiency by ~0.8% versus higher-RDS(ON) alternatives.

LED Driver Power Stages DC-DC Converters for Telecom Systems

Use Scenario: Constant-current 48 V/1.5 A LED driver for outdoor signage with surge immunity requirements.

IC Role / Device Role / Timing Role: Primary switch in isolated forward converter driving synchronous rectification.

Use Value: Low Qgd (5 nC) and fast tf (8 ns) reduce switching loss at 100 kHz, supporting high-frequency operation for compact magnetics.

Use Scenario: 48 V input to 12 V/10 A intermediate bus converter in telecom shelf power system.

IC Role / Device Role / Timing Role: High-side switch in half-bridge configuration with bootstrap gate drive.

Use Value: 3.57 °C/W Rth(ch-c) allows direct mounting to chassis, eliminating dedicated heatsink and reducing BOM cost.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STP5NK50ZFP500 V VDSS, 0.95 Ω RDS(ON), TO-220FP package, Zener-protected gateLower voltage rating limits use in 380 V rectified inputs; shorter EAS (120 mJ)Preferred where lower RDS(ON) outweighs reduced voltage margin and smaller avalanche capability
IRFBC40APBF600 V VDSS, 1.4 Ω RDS(ON), TO-220AB package, higher Qg (22 nC)Higher voltage headroom but slower switching and greater gate drive demandChosen when extended VDSS margin is critical and switching frequency is ≤50 kHz

Compared with STP5NK50ZFP and IRFBC40APBF, TK5A53D(STA4,Q,M) offers balanced trade-offs: sufficient 525 V rating for global mains inputs, moderate 1.2 Ω RDS(ON), and industry-leading 158 mJ avalanche energy-making it optimal for cost-sensitive, reliability-critical industrial SMPS where both voltage margin and ruggedness matter.

Availability

TK5A53D(STA4,Q,M) is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, AC-DC adapters, LED driver power stages, and telecom DC-DC converters requiring stable component supply and long-term manufacturing continuity.

Supply support for TK5A53D(STA4,Q,M) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on industrial reliability and energy efficiency.

The TK5A53D(STA4,Q,M) belongs to Toshiba's π-MOSⅦ high-voltage MOSFET product line, engineered specifically for rugged, high-efficiency switching regulators in industrial and commercial power conversion systems.

FAQ

What is the maximum continuous drain current rating for TK5A53D(STA4,Q,M)?

The TK5A53D(STA4,Q,M) has a maximum continuous drain current (ID) of 5 A at Tc = 25°C. This rating assumes proper heatsinking to maintain channel temperature ≤150°C; derating is required above 25°C case temperature per the PD vs. Tc curve in the datasheet. At 100°C case temperature, the usable ID drops to approximately 3.2 A.

Does TK5A53D(STA4,Q,M) include built-in gate protection?

No, TK5A53D(STA4,Q,M) does not integrate gate Zener protection. Its gate-source voltage rating is ±30 V absolute maximum, and gate leakage current is specified at ±1 μA max. External gate resistors and clamping (e.g., 18 V Zener) are recommended in noisy environments or when using high-speed gate drivers to prevent gate oxide damage.

What is the typical gate threshold voltage range for TK5A53D(STA4,Q,M)?

The TK5A53D(STA4,Q,M) exhibits a gate threshold voltage (Vth) range of 2.4 V to 4.4 V, measured at VDS = 10 V and ID = 1 mA. This wide window ensures consistent turn-on across process variation and temperature, supporting compatibility with both 5 V and 12 V gate drive rails without requiring level-shifting circuitry.

Can TK5A53D(STA4,Q,M) be used in avalanche mode repeatedly?

TK5A53D(STA4,Q,M) is rated for repetitive avalanche energy (EAR) of 3.5 mJ per pulse, limited by channel temperature rise. While single-pulse avalanche is fully characterized at 158 mJ, repeated operation must strictly follow the EAR limit and ensure duty cycle and pulse width remain within the SOA curves to avoid cumulative thermal stress and premature failure.

What package type does TK5A53D(STA4,Q,M) use, and is it RoHS compliant?

TK5A53D(STA4,Q,M) uses the SC-67 package (JEITA designation), also known as Toshiba 2-10U1B, with through-hole mounting and a metal drain tab. Per Toshiba documentation, it is RoHS compliant (marked [[G]]/RoHS COMPATIBLE), meeting Directive 2011/65/EU; lead-free soldering profiles compatible with SnAgCu alloys are supported.

TK5A53D(STA4,Q,M) Specifications

Product attributes
Attribute value
Manufacturer:
Toshiba Semiconductor and Storage
Series:
π-MOSVII
Package/Case:
TO-220-3 Full Pack
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
525 V
Current - Continuous Drain (Id) @ 25°C:
5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
1.5Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id:
4.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
11 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
540 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
35W (Tc)
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220SIS

TK5A53D(STA4,Q,M) FAQ

1.How can I place an order for TK5A53D(STA4,Q,M) through Aetrix?

Please submit a Request for Quotation (RFQ) for TK5A53D(STA4,Q,M) on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK5A53D(STA4,Q,M) reliable?

The price and inventory of TK5A53D(STA4,Q,M) are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK5A53D(STA4,Q,M) is usually 5 days.

3.What payment methods are accepted for TK5A53D(STA4,Q,M)?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK5A53D(STA4,Q,M) transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK5A53D(STA4,Q,M)?

TK5A53D(STA4,Q,M) orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK5A53D(STA4,Q,M) order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK5A53D(STA4,Q,M)?

For technical support, including TK5A53D(STA4,Q,M) datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK5A53D(STA4,Q,M) requirements.

6.How does Aetrix verify that TK5A53D(STA4,Q,M) is sourced from the original manufacturer or authorized distributors?

All TK5A53D(STA4,Q,M) products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK5A53D(STA4,Q,M) meets industry standards.

7.What is the process for return or replacement of TK5A53D(STA4,Q,M)?

All TK5A53D(STA4,Q,M) units undergo pre-shipment inspection (PSI). If there is an issue with TK5A53D(STA4,Q,M), returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK5A53D(STA4,Q,M) part is unused and in its original packaging.

Return procedure for TK5A53D(STA4,Q,M):

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

TK5A53D(STA4,Q,M) Tags

  • TK5A53D(STA4,Q,M)
  • TK5A53D(STA4,Q,M) PDF
  • TK5A53D(STA4,Q,M) Datasheet
  • TK5A53D(STA4,Q,M) Specifications
  • TK5A53D(STA4,Q,M) Images
  • Toshiba Semiconductor and Storage
  • Toshiba Semiconductor and Storage TK5A53D(STA4,Q,M)
  • Buy TK5A53D(STA4,Q,M)
  • TK5A53D(STA4,Q,M) Price
  • TK5A53D(STA4,Q,M) Distributor
  • TK5A53D(STA4,Q,M) Supplier
  • TK5A53D(STA4,Q,M) Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER