Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN2R6-80YSFX

Name: PSMN2R6-80YSFX
Brand: Nexperia USA Inc.
SKU: PSMN2R6-80YSFX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: PSMN2R6-80YSFX

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: SOT-1023, 4-LFPAK

Datasheet:: PSMN2R6-80YSFX.pdf

Description:: PSMN2R6-80YSF/SOT1023/4 LEADS

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:57

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

PSMN2R6-80YSFX from Nexperia is an N-channel NextPower 80 V MOSFET in LFPAK56E (SOT1023) package, rated for 231 A continuous drain current at T_mb = 25 °C, with R_DS(on) = 1.9–2.4 mΩ at V_GS = 10 V and T_j = 25 °C, qualified to 175 °C junction temperature, and used as a primary-side switch or synchronous rectifier in high-efficiency DC-DC converters.

For engineers reviewing the PSMN2R6-80YSFX datasheet, PSMN2R6-80YSFX pinout, PSMN2R6-80YSFX application, or PSMN2R6-80YSFX equivalent, key selection criteria include its low Q_G × R_DS(on) figure-of-merit (85 nC × 2.4 mΩ), strong unclamped avalanche rating (383 mJ), 0.45 K/W junction-to-mounting-base thermal resistance, and LFPAK56E package compatibility with high-current PCB layouts.

Technical Context

This MOSFET employs a trench-gated superjunction structure optimized for high-current switching with minimized conduction and switching losses. Its gate threshold voltage (V_GS(th)) ranges from 2 V to 4 V at T_j = 25 °C, and exhibits -7 mV/K temperature coefficient, enabling stable turn-on behavior across industrial temperature ranges.

The device integrates a robust body diode with Q_r = 33 nC and t_rr = 38 ns under specified conditions, supporting fast-recovery operation in synchronous rectification. Its avalanche ruggedness is 100% production-tested, and it meets Ha-free and RoHS compliance in the LFPAK56E package.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V maximum - supports 48 V input bus designs with 20 % margin for transients in telecom and server power supplies.
R_DS(on) @ 10 V / 25 °C	1.9–2.4 mΩ - enables <1.2 W conduction loss at 25 A, critical for high-current synchronous rectifiers.
I_D(max) @ T_mb = 25 °C	231 A - validated continuous current rating using mounting base temperature measurement, not ambient.
Q_G(tot)	42.5–127 nC - low gate charge reduces driver power and enables efficient 100–500 kHz switching in LLC resonant converters.
E_AS	383 mJ - non-repetitive avalanche energy at I_D = 58 A, V_sup ≤ 80 V, enabling robustness against inductive switching faults.
R_th(j-mb)	0.45–0.51 K/W - allows direct thermal coupling to heatsink via exposed mounting base, supporting >200 W dissipation with minimal ΔT.
Q_r (diode)	33 nC - low recovered charge minimizes reverse recovery losses and EMI in hard-switched topologies.

Pinout & Package

PSMN2R6-80YSFX uses the LFPAK56E (SOT1023) package - a 4-lead, single-ended surface-mount plastic package with an exposed copper mounting base electrically connected to the drain, optimized for high-current, low-inductance, and low-thermal-resistance applications.

Pin/Terminal	Circuit Role	Design Meaning
1	Source	Primary source connection; three pins (1, 2, 3) are internally paralleled for low-inductance, high-current return path.
2	Source	Redundant source terminal - reduces package inductance and improves current sharing in parallel configurations.
3	Source	Third source terminal - enhances thermal spreading and lowers effective R_DS(on) in high-frequency PWM operation.
4	Gate	Control input; isolated from drain and source; requires 10 V drive for full enhancement and minimal R_DS(on).
Mounting Base (mb)	Drain	Exposed copper pad electrically tied to drain; serves as primary thermal and high-current power path to PCB copper plane.

Key Features

Feature	Design Value
Low Q_rr	33 nC - reduces voltage spiking and EMI during diode commutation in synchronous rectification.
High I_D(max)	231 A continuous - verified at mounting base temperature, enabling single-device replacement of multi-MOSFET paralleled solutions.
Low Q_G × R_DS(on)	~200 pC·Ω - benchmark FoM for high-efficiency switching in 100–300 kHz DC-DC stages.
Avalanche-rated & 100% tested	383 mJ E_AS - ensures reliability in flyback and hard-switched converters without external snubbers.
LFPAK56E package	0.45 K/W R_th(j-mb) - delivers 2.5× better thermal performance than standard SO-8 for same footprint.

Applications

AC-DC Synchronous Rectification

Primary-Side Switch in Isolated DC-DC

Use Scenario: Secondary-side rectification in 65–200 W USB-PD adapters and laptop power supplies.

IC Role / Device Role / Timing Role: N-channel MOSFET replacing Schottky diode, driven by controller IC with adaptive gate timing.

Use Value: Reduces conduction loss by >40 % vs. 40 V Schottky, enabling >95 % efficiency at full load with lower thermal stress.

Use Scenario: High-current primary switch in 300–600 W LLC resonant converters for datacenter PSUs.

IC Role / Device Role / Timing Role: Main power switch operating at 200–350 kHz with ZVS, requiring low Q_G and robust dV/dt immunity.

Use Value: Enables ZVS over wider load range due to low Q_GD (16.5 nC typ) and fast t_f (29 ns), reducing switching loss by ~18 %.

BLDC Motor Control (Inverter Leg)

Flyback Converter Primary Switch

Use Scenario: High-power 3-phase inverter leg in 500–1000 W cordless power tools and e-bike controllers.

IC Role / Device Role / Timing Role: Low-side switch in 60–100 V battery-fed half-bridge, handling 150+ A peak phase current.

Use Value: Withstands repetitive avalanche events during motor phase commutation; 923 A pulsed I_DM supports short-circuit robustness.

Use Scenario: Primary switch in universal-input (90–264 VAC) 30–65 W flyback converters for smart home devices.

IC Role / Device Role / Timing Role: Hard-switched 80 V-rated transistor handling reflected output voltage + leakage spike.

Use Value: 80 V V_DS rating plus 383 mJ E_AS eliminates need for clamping circuits in cost-sensitive consumer designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 80 V N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IPP026N08N	R_DS(on) = 2.6 mΩ @ 10 V / 25 °C; Q_G(tot) = 95 nC; TO-220FP package	Higher thermal resistance (R_th(j-c) ≈ 1.2 K/W); requires heatsink; no integrated mounting base	Prefer when legacy through-hole layout or higher surge current tolerance is required; avoid in space-constrained SMT designs.
Vishay SiR626DP	R_DS(on) = 2.7 mΩ @ 10 V / 25 °C; Q_G(tot) = 79 nC; PowerPAK® 8x8 package	Larger footprint (8×8 mm); R_th(j-mb) = 0.65 K/W; no 100 % avalanche test	Choose when board area permits larger package and lower gate charge is prioritized over absolute R_DS(on) minimum.

Compared with IPP026N08N and SiR626DP, PSMN2R6-80YSFX delivers the lowest R_DS(on) in a compact LFPAK56E footprint, best-in-class R_th(j-mb), and production-verified avalanche ruggedness-making it optimal for thermally dense, high-efficiency SMT power stages where mounting base thermal coupling is leveraged.

Availability

PSMN2R6-80YSFX is available at Aetrix Electronics and suitable for high-current DC-DC converters, USB-PD adapter designs, and BLDC motor inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing for volume production.

Supply support for PSMN2R6-80YSFX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors, delivering high-performance, reliable discrete, logic, and MOSFET solutions for automotive, industrial, and consumer markets.

This device belongs to the NextPower series - engineered specifically for high-efficiency, high-current switching applications demanding low R_DS(on), low gate charge, and robust avalanche capability in compact surface-mount packages.

FAQ

What is the maximum continuous drain current rating for PSMN2R6-80YSFX, and under what condition is it specified?

The maximum continuous drain current is 231 A, specified at mounting base temperature (T_mb) = 25 °C with V_GS = 10 V. This rating reflects real-world thermal mounting performance-not ambient temperature-and drops to 163 A at T_mb = 100 °C per Figure 2 in the datasheet.

Does PSMN2R6-80YSFX require a negative gate voltage for safe turn-off in high-dV/dt environments?

No. The device has a gate-source voltage rating of ±20 V and is designed for standard 0 V/10 V gate drive. Its V_GS(th) (2–4 V) and low C_iss/C_rss ratio provide inherent noise immunity; no negative bias is needed for reliable operation in typical 48 V or 60 V bus applications.

How is the mounting base (drain) electrically isolated from the PCB in standard layout practices?

The mounting base is the drain terminal and must be electrically connected to the high-side DC node (e.g., primary rail in flyback). It is not isolated-it is soldered directly to a large copper pour tied to that net. Thermal isolation is achieved only via dielectric layers beneath the copper; electrical connection is mandatory and intentional.

Can PSMN2R6-80YSFX be paralleled with identical units without external gate resistors?

Yes-its matched threshold voltage (±0.5 V typical spread) and low gate resistance (0.4–1.6 Ω) enable stable current sharing. However, individual 5–10 Ω gate resistors are still recommended to damp ringing and ensure simultaneous turn-on/turn-off across paralleled devices in high-di/dt applications.

PSMN2R6-80YSFX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SOT-1023, 4-LFPAK

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 231A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.4mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 127 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 8191 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 294W (Ta)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: LFPAK56, Power-SO8

PSMN2R6-80YSFX FAQ

1.How can I place an order for PSMN2R6-80YSFX through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN2R6-80YSFX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN2R6-80YSFX reliable?

The price and inventory of PSMN2R6-80YSFX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN2R6-80YSFX is usually 5 days.

3.What payment methods are accepted for PSMN2R6-80YSFX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN2R6-80YSFX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN2R6-80YSFX?

PSMN2R6-80YSFX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN2R6-80YSFX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN2R6-80YSFX?

For technical support, including PSMN2R6-80YSFX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN2R6-80YSFX requirements.

6.How does Aetrix verify that PSMN2R6-80YSFX is sourced from the original manufacturer or authorized distributors?

All PSMN2R6-80YSFX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN2R6-80YSFX meets industry standards.

7.What is the process for return or replacement of PSMN2R6-80YSFX?

All PSMN2R6-80YSFX units undergo pre-shipment inspection (PSI). If there is an issue with PSMN2R6-80YSFX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN2R6-80YSFX part is unused and in its original packaging.

Return procedure for PSMN2R6-80YSFX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-03 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-01 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…