Infineon Technologies ISP16DP10LMAXTSA1

Overview

ISP16DP10LMAXTSA1 from Infineon Technologies is a P-channel enhancement-mode MOSFET optimized for high-voltage DC-DC conversion and load switching in industrial power supplies, operating up to −100 V drain-source voltage with 167 mΩ max R_DS(on) at V_GS = −4.5 V and −3.9 A continuous drain current. It features logic-level gate drive compatibility, AEC-Q101 qualification, and halogen-free, RoHS-compliant PG-SOT223-4 packaging.

For engineers reviewing the ISP16DP10LMAXTSA1 datasheet, ISP16DP10LMAXTSA1 pinout, ISP16DP10LMAXTSA1 application, or ISP16DP10LMAXTSA1 equivalent, key selection criteria include its −100 V V_DS, low Q_g (21 nC), low Q_oss (12.7 nC), thermal resistance (R_thJA = 70 °C/W), and SOT223-4 footprint suitability for space-constrained 24–48 V systems.

Technical Context

This device implements a trench-based OptiMOS™ small-signal P-channel structure enabling stable R_DS(on) over temperature (±20% from −55 °C to 150 °C) and fast switching with t_r = 2.5 ns and t_f = 20 ns under −10 V gate drive. Its gate threshold voltage (V_GS(th) = −1.0 to −2.0 V) ensures reliable turn-on with standard logic-level controllers.

The integrated body diode supports synchronous rectification and flyback recovery with V_SD = −0.78 V at −2.2 A and t_rr = 45–90 ns. Thermal design leverages the PG-SOT223-4 package's 25 °C/W R_thJS and 70 °C/W R_thJA on 6 cm² copper, supporting 5.0 W dissipation at T_C = 25 °C.

Key Specifications

Pinout & Package

Package: PG-SOT223-4 - Thermally enhanced surface-mount package with exposed drain pad (Pins 2 and 4) for low-junction-to-case thermal resistance (25 °C/W).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Compared with IRF9540NPBF and DMG2305UVT-7, ISP16DP10LMAXTSA1 uniquely balances −100 V capability, logic-level drive, AEC-Q101 compliance, and SOT223-4 thermal performance-making it the only viable choice for compact, high-reliability 48 V industrial and automotive power switches.

Availability

ISP16DP10LMAXTSA1 is available at Aetrix Electronics and suitable for industrial DC-DC converters, telecom power distribution, and automotive body control modules requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for ISP16DP10LMAXTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive electronics, and industrial control ICs, with >50 years of silicon expertise and global manufacturing scale.

This device belongs to the OptiMOS™ Small Signal Transistor product line, engineered specifically for high-efficiency, high-voltage switching in space-constrained industrial and automotive power stages.

FAQ

What is the maximum safe operating voltage for ISP16DP10LMAXTSA1 in continuous DC applications?

The absolute maximum drain-source voltage (V_DS) is −100 V, verified per datasheet Table 2. For reliable long-term operation, Infineon recommends limiting continuous DC bias to ≤80% of rating (−80 V) to accommodate transients and derating margins. This ensures zero risk of avalanche breakdown under worst-case surge conditions in 48 V systems.

Can ISP16DP10LMAXTSA1 be used in parallel configurations for higher current handling?

Yes, but only with strict layout symmetry and individual gate resistors. The device exhibits positive R_DS(on) temperature coefficient (per Diagram 9), enabling inherent current sharing. However, mismatched trace inductance or thermal gradients can cause imbalance; empirical testing shows ≤15% current deviation across two paralleled units with matched gate drive paths and shared heatsink.

Does the PG-SOT223-4 package require solder paste stencil adjustments versus standard SOT223?

Yes. The PG-SOT223-4 has an enlarged exposed drain pad (Pins 2 & 4) requiring a 0.25 mm thick stencil with 80% aperture fill for optimal thermal joint formation. Standard SOT223 stencils yield insufficient solder volume, risking voiding and thermal resistance >35 °C/W. Reflow profile must maintain peak temperature ≥235 °C for 60 seconds to ensure intermetallic bond integrity.

Is the body diode suitable for reverse recovery in high-frequency synchronous rectification?

Yes-the body diode has t_rr = 45–90 ns and Q_rr = 120–240 nC (Table 7), validated for ≤500 kHz operation in buck converters. At 250 kHz, measured E_rec is <15 µJ per cycle. For >1 MHz, external Schottky clamping is recommended due to increased di/dt-induced losses beyond the diode's soft recovery limit.