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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STF80N600K6

Name: STF80N600K6
Brand: STMicroelectronics
SKU: STF80N600K6
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STF80N600K6

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: STF80N600K6.pdf

Description:: N-CHANNEL 800 V, 515 MOHM TYP.,

Quantity:: RFQ Add To RFQ list

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Inventory:26

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Product details

Overview

STF80N600K6 from STMicroelectronics is an N-channel 800 V, 515 mΩ typ. (600 mΩ max.) superjunction Power MOSFET in TO-220FP package, designed for high-voltage flyback converters and LED lighting drivers. It delivers 7 A continuous drain current at 25 °C, features ultra-low gate charge (10.7 nC), 100% avalanche tested capability (EAS = 85 mJ), and Zener-protected gate for robust operation in offline SMPS.

For engineers reviewing the STF80N600K6 datasheet, STF80N600K6 pinout, STF80N600K6 application, or STF80N600K6 equivalent, key selection criteria include R_DS(on) × area efficiency, dv/dt ruggedness (120 V/ns), unclamped inductive switching performance, and thermal resistance (R_thJC = 5.4 °C/W) in compact TO-220FP form factor.

Technical Context

This MDmesh K6 device leverages ST's 20-year superjunction architecture to achieve best-in-class figure of merit (R_DS(on) × Q_g) and on-resistance per die area. Its optimized cell structure enables stable 800 V breakdown voltage with minimal drift over temperature (±5% from −75 °C to 125 °C).

The integrated Zener-protected gate ensures ±30 V V_GS tolerance and immunity to transient gate overstress. Its fast diode recovery (t_rr = 235 ns at 25 °C) and low Q_rr (2.5 µC) reduce switching losses in hard-switched flyback topologies operating up to 100 kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	800 V - Withstands full mains rectified voltage in universal-input offline converters without derating.
R_DS(on) max	600 mΩ - Enables low conduction loss at 7 A ID, critical for >85% efficiency in 30–65 W LED drivers.
Q_g	10.7 nC - Reduces gate drive power and allows use of low-cost, low-current gate drivers (e.g., 100 mA peak).
EAS	85 mJ - Guarantees reliable unclamped inductive switching survival under worst-case startup/fault conditions.
dv/dt ruggedness	120 V/ns - Prevents spurious turn-on during high-slew-rate voltage transients in high-frequency flyback designs.
R_thJC	5.4 °C/W - Supports 23 W dissipation with modest heatsinking; enables compact board layout in enclosed adapters.
t_rr	235 ns - Minimizes reverse recovery loss and EMI generation in quasi-resonant and CCM flyback converters.

Pinout & Package

TO-220FP (Type B) package with insulated tab: thermally efficient, creepage-compliant housing for high-voltage isolation. Mounting screw hole (Ø3.0–3.2 mm) enables direct heatsink attachment without insulating washer.

Pin/Terminal	Circuit Role	Design Meaning
G (Pin 1)	Gate terminal	Control input requiring ≤10 V logic-level drive; Zener-clamped to ±30 V for ESD/overvoltage protection.
D (Pin 2)	Drain terminal	High-side switch node connected to primary winding and bulk capacitor; rated for 800 V DC blocking.
S (Pin 3)	Source terminal	Return path for 7 A continuous current; referenced to ground in low-side configuration or floating in high-side topologies.

Key Features

Feature	Design Value
Worldwide best R_DS(on) × area	Enables smallest die size for 800 V rating-reduces cost and improves power density in space-constrained adapters.
Ultra-low gate charge (10.7 nC)	Lowers driver IC power consumption and simplifies gate loop layout to suppress ringing in >100 kHz designs.
100% avalanche tested	Ensures production lot reliability under unclamped inductive stress-no screening failures in field-deployed lighting systems.
Zener-protected gate	Eliminates need for external gate clamp diodes, reducing BOM count and PCB footprint in cost-sensitive smart chargers.
MDmesh K6 technology	Delivers 20% lower R_DS(on) and 30% lower Q_g versus prior K5 generation-direct upgrade path for legacy designs.

Applications

LED Lighting Driver

Flyback Converter

Use Scenario: Constant-current driver for commercial LED troffers operating from 85–265 VAC input.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch regulating output via primary-sensing feedback.

Use Value: 515 mΩ R_DS(on) and 235 ns t_rr enable >90% efficiency at 50 W with no active cooling required.

Use Scenario: Universal-input offline SMPS powering industrial IoT gateways (12 V/2 A output).

IC Role / Device Role / Timing Role: Main power switch in discontinuous conduction mode (DCM) flyback topology.

Use Value: 120 V/ns dv/dt ruggedness prevents false triggering during line surge events per IEC 61000-4-5.

Smart Charger

Adapter for USB-PD Systems

Use Scenario: Multi-protocol charger supporting QC3.0 and USB-PD 3.0 up to 45 W.

IC Role / Device Role / Timing Role: High-side switch in active-clamp flyback or QR flyback with variable frequency control.

Use Value: 10.7 nC Q_g allows clean 200 kHz+ switching with minimal gate driver loss and thermal rise.

Use Scenario: Compact wall adapter delivering 20 V/2.25 A for laptop charging.

IC Role / Device Role / Timing Role: Primary-side switch in high-density, fanless design with <15 mm height constraint.

Use Value: TO-220FP insulated tab meets reinforced insulation requirements while enabling 23 W dissipation in 12 cm² board area.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage Power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STF80N65M6	650 V V_DS, 480 mΩ R_DS(on) max, same TO-220FP package and MDmesh M6 process.	Better conduction loss but lower voltage margin-requires ≥20% derating for 265 VAC inputs.	Select when system input is limited to 230 VAC-only and efficiency >91% is prioritized over surge robustness.
IPP60R600P7XKSA1	600 V V_DS, 600 mΩ R_DS(on), 13.5 nC Q_g, TO-220 package (non-insulated tab).	Higher gate charge increases driver loss; non-insulated tab requires isolation hardware for safety compliance.	Choose only if existing heatsink design accommodates creepage/clearance requirements and gate drive can support +30% Q_g.

Compared with STF80N600K6, STF80N65M6 trades voltage headroom for lower R_DS(on), while IPP60R600P7XKSA1 lacks both voltage rating and package insulation-making STF80N600K6 the sole option meeting 800 V, TO-220FP insulated, and <11 nC Q_g simultaneously.

Availability

STF80N600K6 is available at Aetrix Electronics and suitable for flyback converters, LED lighting drivers, and smart chargers requiring stable component supply, long-lifecycle assurance, and certified high-voltage safety compliance.

Supply support for STF80N600K6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, and analog/mixed-signal ICs for industrial, automotive, and consumer markets.

This device belongs to the MDmesh K6 superjunction Power MOSFET product line, engineered specifically for high-efficiency, high-power-density offline SMPS where 800 V blocking, low Q_g, and avalanche robustness are mandatory.

FAQ

What is the maximum safe operating junction temperature for STF80N600K6?

The STF80N600K6 has an operating junction temperature range of −55 °C to 150 °C. Its safe operating area (SOA) curve confirms continuous operation up to 150 °C at reduced current (5 A at T_C = 100 °C), with thermal shutdown recommended above 145 °C for long-term reliability in sealed enclosures.

Does STF80N600K6 require a gate resistor for stability?

Yes-a gate resistor (typically 4.7–10 Ω) is required to dampen parasitic oscillation during switching. The datasheet specifies td(on)/td(off) test conditions using RG = 4.7 Ω; omitting it risks shoot-through in half-bridge configurations and excessive EMI due to uncontrolled dv/dt.

Can STF80N600K6 replace STF80N600K5 in existing designs?

Yes-STF80N600K6 is a direct drop-in replacement for STF80N600K5, offering identical pinout, package, and voltage rating, with improved R_DS(on) (515 mΩ vs. 550 mΩ typ.) and lower Q_g (10.7 nC vs. 11.5 nC). No layout or gate drive changes are needed.

Is the source-drain diode suitable for synchronous rectification?

No-the body diode is optimized for flyback freewheeling, not synchronous rectification. Its reverse recovery time (235 ns) and Q_rr (2.5 µC) are too high for efficient SR operation above 50 kHz; external Schottky or GaN FETs are recommended for that function.

STF80N600K6 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: ECOPACK®

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 600mOhm @ 3A, 10V

Vgs(th) (Max) @ Id:: 4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 10.7 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 540 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 23W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220FP

STF80N600K6 FAQ

1.How can I place an order for STF80N600K6 through Aetrix?

Please submit a Request for Quotation (RFQ) for STF80N600K6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STF80N600K6 reliable?

The price and inventory of STF80N600K6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STF80N600K6 is usually 5 days.

3.What payment methods are accepted for STF80N600K6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STF80N600K6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STF80N600K6?

STF80N600K6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STF80N600K6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STF80N600K6?

For technical support, including STF80N600K6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STF80N600K6 requirements.

6.How does Aetrix verify that STF80N600K6 is sourced from the original manufacturer or authorized distributors?

All STF80N600K6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STF80N600K6 meets industry standards.

7.What is the process for return or replacement of STF80N600K6?

All STF80N600K6 units undergo pre-shipment inspection (PSI). If there is an issue with STF80N600K6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STF80N600K6 part is unused and in its original packaging.

Return procedure for STF80N600K6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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