Toshiba Semiconductor and Storage TK560A60Y,S4X

Overview

TK560A60Y from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel super-junction MOSFET designed for high-voltage switching in offline power supplies. It delivers 600 V drain-source breakdown voltage, 0.43 Ω typical R_DS(ON) at V_GS = 10 V and I_D = 3.5 A, 7 A DC drain current (T_c = 25 °C), and operates with 3–4 V gate threshold voltage - enabling direct drive from standard logic-level controllers in AC-DC adapters and industrial SMPS.

For engineers reviewing the TK560A60Y datasheet, TK560A60Y pinout, TK560A60Y application, or TK560A60Y equivalent, key selection criteria include its TO-220SIS package thermal performance (R_th(ch-c) = 4.16 °C/W), avalanche ruggedness (E_AS = 64 mJ), and diode reverse recovery characteristics (t_rr = 240 ns, Q_rr = 1.6 µC) critical for hard-switched PFC and flyback topologies.

Technical Context

This DTMOS™-IV device uses Toshiba's super-junction structure to achieve low conduction loss while maintaining fast switching and robust dv/dt immunity (≥50 V/ns). Its gate charge profile (Q_g = 14.5 nC typ., Q_gd/Q_gs1 = 7.5/2.3 nC) supports efficient operation in 65–100 kHz SMPS designs without requiring complex gate driving.

The integrated body diode exhibits controlled reverse recovery (I_rr = 14.2 A peak, dv/dt ruggedness ≥15 V/ns), making it suitable for quasi-resonant and discontinuous conduction mode (DCM) converters where diode commutation stress is critical. Thermal design is anchored by channel-to-case resistance of 4.16 °C/W and 150 °C maximum channel temperature rating.

Key Specifications

Pinout & Package

TK560A60Y is housed in a TO-220SIS (JEITA SC-67, Toshiba 2-10U1S) package with isolated tab - electrically isolating the drain from the heatsink mounting surface. The package weighs 1.7 g and features screw-mount compatibility with 0.6 N·m maximum torque.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage switching applications.

Compared with STP6NK60ZFP and IPP60R099C7, TK560A60Y offers balanced trade-offs: superior avalanche ruggedness versus ST's part, lower gate drive demand than Infineon's CoolMOS™, and built-in drain isolation eliminating insulator hardware - simplifying BOM and assembly in space-constrained industrial PSUs.

Availability

TK560A60Y is available at Aetrix Electronics and suitable for AC-DC adapters, industrial SMPS, LED drivers, and PFC boost stages requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for TK560A60Y includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with decades of expertise in high-reliability discrete components.

TK560A60Y belongs to Toshiba's DTMOS™-IV super-junction MOSFET product line, engineered specifically for high-efficiency, high-voltage switching in compact offline power supplies and industrial power conversion systems.

FAQ

What is the gate threshold voltage range for TK560A60Y?

The TK560A60Y has a gate threshold voltage (V_th) of 3–4 V, measured at V_DS = 10 V and I_D = 0.24 mA. This enhancement-mode specification ensures reliable turn-on with standard 3.3 V or 5 V logic-level drivers and prevents spurious conduction during power sequencing. The TK560A60Y maintains this V_th stability across its rated temperature range.

Does TK560A60Y have an isolated drain tab?

Yes, TK560A60Y uses the TO-220SIS package with an electrically isolated drain tab - confirmed by Toshiba's package designation "2-10U1S" and JEITA SC-67 standard. This eliminates the need for insulating pads or washers when mounting to a heatsink, reducing thermal resistance and assembly complexity. The TK560A60Y's isolation voltage rating is 2000 V_RMS.

What is the maximum single-pulse avalanche energy rating for TK560A60Y?

The TK560A60Y is rated for 64 mJ of single-pulse avalanche energy (E_AS) under test conditions of V_DD = 90 V, T_ch = 25 °C (initial), L = 34.8 mH, and R_G = 25 Ω. This guaranteed rating allows the TK560A60Y to safely absorb inductive turn-off energy in flyback and forward converters without external snubbers, improving system reliability and reducing component count.

How does the body diode performance of TK560A60Y compare to standard MOSFETs?

The TK560A60Y features a fast, soft-recovery body diode with t_rr = 240 ns and Q_rr = 1.6 µC (at I_DR = 3 A, dI_DR/dt = 100 A/µs), significantly better than standard planar MOSFETs. This reduces reverse recovery loss and voltage overshoot in hard-switched topologies. The TK560A60Y's diode dv/dt ruggedness exceeds 15 V/ns, enhancing noise immunity during commutation.

What thermal resistance values apply to TK560A60Y in its TO-220SIS package?

TK560A60Y specifies R_th(ch-c) = 4.16 °C/W (channel-to-case) and R_th(ch-a) = 62.5 °C/W (channel-to-ambient, no heatsink). These values define thermal design boundaries: with a 30 W power dissipation limit and 30 °C temperature rise above ambient, the TK560A60Y requires a heatsink with ≤2.5 °C/W thermal resistance. The TK560A60Y's low R_th(ch-c) enables efficient heat transfer directly to the heatsink via its isolated tab.