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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK3R1E04PL,S1X

Name: TK3R1E04PL,S1X
Brand: Toshiba Semiconductor and Storage
SKU: TK3R1E04PL,S1X
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK3R1E04PL,S1X

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: TK3R1E04PL,S1X.pdf

Description:: MOSFET N-CH 40V 100A TO220

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Product details

Overview

TK3R1E04PL,S1X from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel power MOSFET in U-MOS-H process, designed for high-current switching in DC-DC converters and motor drivers. It delivers R_DS(ON) = 2.5 mΩ (typ., V_GS = 10 V), Q_SW = 17.5 nC (typ.), Q_oss = 42 nC (typ.), and supports 100 A DC drain current with 40 V V_DSS.

For engineers reviewing the TK3R1E04PL,S1X datasheet, TK3R1E04PL,S1X pinout, TK3R1E04PL,S1X application, or TK3R1E04PL,S1X equivalent, key selection criteria include low conduction loss at high current, fast switching with minimized gate charge, thermal performance under continuous T_c-limited operation, and TO-220 package compatibility with heatsink mounting.

Technical Context

This MOSFET uses Toshiba's U-MOS-H trench-gate structure to achieve low R_DS(ON) and reduced gate-drain charge (Q_gd = 16.8 nC typ.). Its enhancement-mode threshold (V_th = 1.4–2.4 V) enables reliable 4.5 V logic-level drive, while the integrated body diode supports synchronous rectification with t_rr = 50 ns (typ.) and Q_rr = 50 nC (typ.).

The device operates up to T_ch = 175 °C with R_th(ch-c) = 1.72 °C/W, and its SOA is defined for single-pulse avalanche energy E_AS = 35 mJ at I_AS = 100 A - critical for hard-switched converter reliability.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - maximum blocking voltage compatible with 36 V nominal bus systems and 12/24 V industrial rails.
R_DS(ON)	2.5 mΩ (typ., V_GS = 10 V) - enables <100 mW conduction loss at 20 A, reducing thermal load in high-current output stages.
Q_SW	17.5 nC (typ.) - low total switching charge minimizes driver power and gate drive losses in MHz-range converters.
Q_oss	42 nC (typ.) - low output charge reduces turn-off energy and improves light-load efficiency in resonant topologies.
I_D (DC)	100 A (T_c = 25 °C) - rated for continuous high-current operation when mounted on heatsink per TO-220 mechanical spec.
E_AS	35 mJ - guaranteed single-pulse avalanche capability supports robustness against inductive switching transients.
R_th(ch-c)	1.72 °C/W - enables direct thermal path to heatsink, supporting >70 W dissipation at ΔT = 120 °C.

Pinout & Package

Package: TO-220 (TOSHIBA 2-10X1A), through-hole, insulated tab, heatsink-mountable. Weight: 1.96 g (typ.).

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Control terminal; requires ≤±20 V gate-source voltage; sensitive to ESD - must be handled with grounded tools.
2	Drain (heatsink)	Main power terminal; electrically connected to metal tab; provides primary thermal path to heatsink.
3	Source	Reference node for gate drive; common return for load current; forms source-drain channel with Drain.

Key Features

Feature	Design Value
U-MOS-H trench process	Enables 2.5 mΩ R_DS(ON) at 40 V rating - superior on-resistance density vs. planar MOSFETs in same package.
Low Q_gd/Q_g ratio	Q_gd = 16.8 nC / Q_g = 63.4 nC ≈ 26% - improves Miller immunity and dV/dt ruggedness in high-side switching.
Fast body diode	t_rr = 50 ns (typ.), Q_rr = 50 nC (typ.) - reduces reverse recovery loss and EMI in synchronous buck and half-bridge configurations.
High avalanche energy rating	E_AS = 35 mJ - allows safe operation during inductive turn-off without external snubbers in motor drive H-bridges.
Logic-level compatible	V_th = 1.4–2.4 V - ensures full enhancement with 3.3 V or 5 V microcontroller GPIO, eliminating need for level-shifting gate drivers.

Applications

Server VRM Power Stage	Industrial BLDC Motor Inverter
Use Scenario: High-efficiency 48 V input, 1 V/100+ A output multiphase buck converter supplying CPU/GPU core power. IC Role / Device Role / Timing Role: Synchronous high-side switch operating at 500 kHz–1 MHz with tight duty-cycle control and low R_DS(ON) to minimize conduction loss. Use Value: 2.5 mΩ R_DS(ON) limits I²R loss to <25 W at 100 A, enabling compact thermal design without forced air cooling.	Use Scenario: 24–48 V three-phase inverter driving 500 W–2 kW brushless DC motors in CNC spindles and automated conveyors. IC Role / Device Role / Timing Role: Low-side switching element in 6-pack IGBT/MOSFET module replacement, handling 50–100 A peak phase current. Use Value: 100 A DC rating and 175 °C channel limit support continuous torque delivery under stall conditions without derating.
Telecom DC-DC Brick	EV Auxiliary Power Module
Use Scenario: Isolated 48 V-to-12 V intermediate bus converter in telecom shelf power supplies with strict efficiency targets (>95%). IC Role / Device Role / Timing Role: Primary-side synchronous rectifier in active-clamp forward or LLC topology, switching at 300–700 kHz. Use Value: Q_oss = 42 nC and C_oss = 1000 pF (typ.) enable zero-voltage switching over wide load range, improving light-load efficiency.	Use Scenario: 12 V auxiliary power supply in battery electric vehicles converting 400 V traction battery to 12 V for infotainment and lighting loads. IC Role / Device Role / Timing Role: High-current switch in non-isolated buck pre-regulator stage, handling up to 80 A continuous output. Use Value: TO-220 package with heatsink-mountable drain tab simplifies mechanical integration into automotive-grade metal-housed modules with IP67 sealing.

Server VRM Power Stage

Industrial BLDC Motor Inverter

Use Scenario: High-efficiency 48 V input, 1 V/100+ A output multiphase buck converter supplying CPU/GPU core power.

IC Role / Device Role / Timing Role: Synchronous high-side switch operating at 500 kHz–1 MHz with tight duty-cycle control and low R_DS(ON) to minimize conduction loss.

Use Value: 2.5 mΩ R_DS(ON) limits I²R loss to <25 W at 100 A, enabling compact thermal design without forced air cooling.

Use Scenario: 24–48 V three-phase inverter driving 500 W–2 kW brushless DC motors in CNC spindles and automated conveyors.

IC Role / Device Role / Timing Role: Low-side switching element in 6-pack IGBT/MOSFET module replacement, handling 50–100 A peak phase current.

Use Value: 100 A DC rating and 175 °C channel limit support continuous torque delivery under stall conditions without derating.

Telecom DC-DC Brick

EV Auxiliary Power Module

Use Scenario: Isolated 48 V-to-12 V intermediate bus converter in telecom shelf power supplies with strict efficiency targets (>95%).

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier in active-clamp forward or LLC topology, switching at 300–700 kHz.

Use Value: Q_oss = 42 nC and C_oss = 1000 pF (typ.) enable zero-voltage switching over wide load range, improving light-load efficiency.

Use Scenario: 12 V auxiliary power supply in battery electric vehicles converting 400 V traction battery to 12 V for infotainment and lighting loads.

IC Role / Device Role / Timing Role: High-current switch in non-isolated buck pre-regulator stage, handling up to 80 A continuous output.

Use Value: TO-220 package with heatsink-mountable drain tab simplifies mechanical integration into automotive-grade metal-housed modules with IP67 sealing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1404PBF	R_DS(ON) = 4.0 mΩ (V_GS = 10 V); Q_g = 131 nC - higher conduction and switching loss.	Lower frequency operation (<200 kHz); less suitable for high-density VRMs.	Prefer TK3R1E04PL,S1X where efficiency >94% and thermal headroom are critical.
STP110N4F6	R_DS(ON) = 3.2 mΩ; Q_oss = 110 nC - higher output capacitance increases turn-off loss.	Requires larger gate driver due to higher Q_g = 105 nC; less optimal for fast-switching SMPS.	TK3R1E04PL,S1X offers 30% lower Q_oss and 22% lower R_DS(ON), making it superior for high-frequency, high-current designs.

Compared with IRF1404PBF and STP110N4F6, TK3R1E04PL,S1X delivers lower conduction loss at high current, faster switching via reduced Q_SW and Q_oss, and better thermal coupling via TO-220 heatsink tab - directly enabling smaller heatsinks, higher power density, and improved efficiency in 40 V-class power stages.

Availability

TK3R1E04PL,S1X is available at Aetrix Electronics and suitable for high-efficiency DC-DC converters, switching voltage regulators, and motor drivers requiring stable component supply across industrial, telecom, and automotive auxiliary power programs.

Supply support for TK3R1E04PL,S1X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and storage solutions with emphasis on reliability, efficiency, and industrial-grade performance.

The TK3R1E04PL,S1X belongs to Toshiba's U-MOS-H series of high-current N-channel MOSFETs, engineered specifically for high-efficiency, high-power-density switching applications in server VRMs, industrial motor drives, and telecom power systems.

FAQ

What is the maximum continuous drain current rating for TK3R1E04PL,S1X?

The TK3R1E04PL,S1X is rated for 100 A DC drain current at T_c = 25 °C with proper heatsinking. This rating assumes the case temperature is maintained at 25 °C; actual usable current decreases with rising case temperature per the R_th(ch-c) = 1.72 °C/W thermal resistance and the 175 °C maximum channel temperature limit. Derating curves are provided in Figure 8.14 of the official datasheet.

Does TK3R1E04PL,S1X support 4.5 V gate drive?

Yes, TK3R1E04PL,S1X is fully enhancement-mode compatible with 4.5 V gate drive: its V_th range is 1.4–2.4 V (V_DS = 10 V, I_D = 0.5 mA), and R_DS(ON) is specified at V_GS = 4.5 V (3.8 mΩ max). At 4.5 V, it delivers usable conduction performance for logic-level control in space-constrained or low-voltage gate driver designs.

What is the avalanche energy rating of TK3R1E04PL,S1X and how is it tested?

The TK3R1E04PL,S1X has a guaranteed single-pulse avalanche energy rating of E_AS = 35 mJ, measured under conditions of V_DD ≈ 32 V, T_ch = 25 °C (initial), L = 2.7 µH, and I_AS = 100 A. This rating validates robustness against inductive switching transients in motor drive and converter applications where unclamped inductive energy must be safely absorbed by the MOSFET itself.

Is TK3R1E04PL,S1X RoHS compliant and lead-free?

Yes, TK3R1E04PL,S1X is RoHS compliant and lead-free per Toshiba's environmental specifications. The device meets EU RoHS Directive requirements and contains no intentionally added lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls (PBB), or polybrominated diphenyl ethers (PBDE). Full compliance documentation is available upon request from Toshiba or authorized distributors.

How does the body diode performance of TK3R1E04PL,S1X compare to standard MOSFETs?

The TK3R1E04PL,S1X features an optimized body diode with t_rr = 50 ns (typ.) and Q_rr = 50 nC (typ.) at V_R = 20 V, I_DR = 25 A, and −dI_DR/dt = 100 A/µs. This fast, low-charge recovery characteristic reduces switching loss and EMI in synchronous rectification and half-bridge topologies - outperforming many legacy MOSFETs with t_rr > 100 ns and Q_rr > 100 nC.

TK3R1E04PL,S1X Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: U-MOSIX-H

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.8mOhm @ 30A, 4.5V

Vgs(th) (Max) @ Id:: 2.4V @ 500µA

Gate Charge (Qg) (Max) @ Vgs:: 63.4 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4670 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 87W (Tc)

Operating Temperature:: 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

TK3R1E04PL,S1X FAQ

1.How can I place an order for TK3R1E04PL,S1X through Aetrix?

Please submit a Request for Quotation (RFQ) for TK3R1E04PL,S1X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK3R1E04PL,S1X reliable?

The price and inventory of TK3R1E04PL,S1X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK3R1E04PL,S1X is usually 5 days.

3.What payment methods are accepted for TK3R1E04PL,S1X?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK3R1E04PL,S1X transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK3R1E04PL,S1X?

TK3R1E04PL,S1X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK3R1E04PL,S1X order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK3R1E04PL,S1X?

For technical support, including TK3R1E04PL,S1X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK3R1E04PL,S1X requirements.

6.How does Aetrix verify that TK3R1E04PL,S1X is sourced from the original manufacturer or authorized distributors?

All TK3R1E04PL,S1X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK3R1E04PL,S1X meets industry standards.

7.What is the process for return or replacement of TK3R1E04PL,S1X?

All TK3R1E04PL,S1X units undergo pre-shipment inspection (PSI). If there is an issue with TK3R1E04PL,S1X, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK3R1E04PL,S1X part is unused and in its original packaging.

Return procedure for TK3R1E04PL,S1X:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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