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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
TK11A50D(STA4,Q,M) MOSFET N-CH 500V 11A TO220SIS Toshiba Semiconductor and Storage	50	RFQ	Datasheet	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	11A (Ta)	10V	600mOhm @ 5.5A, 10V	4V @ 1mA	24 nC @ 10 V	±30V	1200 pF @ 25 V	-	45W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK56E12N1,S1X MOSFET N CH 120V 56A TO-220 Toshiba Semiconductor and Storage	52	RFQ	Datasheet	U-MOSVIII-H	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	120 V	56A (Ta)	10V	7mOhm @ 28A, 10V	4V @ 1mA	69 nC @ 10 V	±20V	4200 pF @ 60 V	-	168W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220
TK8Q65W,S1Q MOSFET N-CH 650V 7.8A IPAK Toshiba Semiconductor and Storage	75	RFQ	Datasheet	DTMOSIV	TO-251-3 Stub Leads, IPAK	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	7.8A (Ta)	10V	670mOhm @ 3.9A, 10V	3.5V @ 300µA	16 nC @ 10 V	±30V	570 pF @ 300 V	-	80W (Tc)	150°C (TJ)	-	-	Through Hole	IPAK
TK8A55DA(STA4,Q,M) MOSFET N-CH 550V 7.5A TO220SIS Toshiba Semiconductor and Storage	48	RFQ	Datasheet	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	550 V	7.5A (Ta)	10V	1.07Ohm @ 3.8A, 10V	4V @ 1mA	16 nC @ 10 V	±30V	800 pF @ 25 V	-	40W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK18A30D,S5X PB-F POWER MOSFET TRANSISTOR TO- Toshiba Semiconductor and Storage	48	RFQ	Datasheet	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	300 V	18A (Ta)	10V	139mOhm @ 9A, 10V	3.5V @ 1mA	60 nC @ 10 V	±20V	2600 pF @ 100 V	-	45W (Tc)	150°C	-	-	Through Hole	TO-220SIS
TK11A45D(STA4,Q,M) MOSFET N-CH 450V 11A TO220SIS Toshiba Semiconductor and Storage	43	RFQ	Datasheet	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	450 V	11A (Ta)	10V	620mOhm @ 5.5A, 10V	4V @ 1mA	20 nC @ 10 V	±30V	1050 pF @ 25 V	-	40W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK5Q60W,S1VQ MOSFET N CH 600V 5.4A IPAK Toshiba Semiconductor and Storage	75	RFQ	-	DTMOSIV	TO-251-3 Stub Leads, IPAK	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	5.4A (Ta)	10V	900mOhm @ 2.7A, 10V	3.7V @ 270µA	10.5 nC @ 10 V	±30V	380 pF @ 300 V	-	60W (Tc)	150°C (TJ)	-	-	Through Hole	IPAK
TK7A60W,S4VX MOSFET N-CH 600V 7A TO220SIS Toshiba Semiconductor and Storage	40	RFQ	Datasheet	DTMOSIV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	7A (Ta)	10V	600mOhm @ 3.5A, 10V	3.7V @ 350µA	15 nC @ 10 V	±30V	490 pF @ 300 V	-	30W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK9A55DA(STA4,Q,M) MOSFET N-CH 550V 8.5A TO220SIS Toshiba Semiconductor and Storage	50	RFQ	Datasheet	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	550 V	8.5A (Ta)	10V	860mOhm @ 4.3A, 10V	4V @ 1mA	20 nC @ 10 V	±30V	1050 pF @ 25 V	-	40W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK9A60D(STA4,Q,M) MOSFET N-CH 600V 9A TO220SIS Toshiba Semiconductor and Storage	36	RFQ	Datasheet	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	9A (Ta)	10V	830mOhm @ 4.5A, 10V	4V @ 1mA	24 nC @ 10 V	±30V	1200 pF @ 25 V	-	45W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK12Q60W,S1VQ MOSFET N CH 600V 11.5A IPAK Toshiba Semiconductor and Storage	59	RFQ	Datasheet	DTMOSIV	TO-251-3 Stub Leads, IPAK	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	11.5A (Ta)	10V	340mOhm @ 5.8A, 10V	3.7V @ 600µA	25 nC @ 10 V	±30V	890 pF @ 300 V	-	100W (Tc)	150°C (TJ)	-	-	Through Hole	IPAK
TK12A50W,S5X PB-F POWER MOSFET TRANSISTOR TO- Toshiba Semiconductor and Storage	44	RFQ	Datasheet	DTMOSIV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	11.5A (Ta)	10V	300mOhm @ 5.8A, 10V	3.7V @ 600µA	25 nC @ 10 V	±30V	890 pF @ 300 V	-	35W (Tc)	150°C	-	-	Through Hole	TO-220SIS
TK7Q60W,S1VQ MOSFET N-CH 600V 7A IPAK Toshiba Semiconductor and Storage	75	RFQ	Datasheet	DTMOSIV	TO-251-3 Stub Leads, IPAK	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	7A (Ta)	10V	600mOhm @ 3.5A, 10V	3.7V @ 350µA	15 nC @ 10 V	±30V	490 pF @ 300 V	-	60W (Tc)	150°C (TJ)	-	-	Through Hole	IPAK
IRF620STRRPBF MOSFET N-CH 200V 5.2A D2PAK Vishay Siliconix	800	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	200 V	5.2A (Tc)	10V	800mOhm @ 3.1A, 10V	4V @ 250µA	14 nC @ 10 V	±20V	260 pF @ 25 V	-	3W (Ta), 50W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	D2PAK
TK7A65D(STA4,Q,M) MOSFET N-CH 650V 7A TO220SIS Toshiba Semiconductor and Storage	40	RFQ	Datasheet	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	7A (Ta)	10V	980mOhm @ 3.5A, 10V	4V @ 1mA	24 nC @ 10 V	±30V	1200 pF @ 25 V	-	45W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK7A80W,S4X PB-F POWER MOSFET TRANSISTOR TO- Toshiba Semiconductor and Storage	50	RFQ	Datasheet	DTMOSIV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	6.5A (Ta)	10V	950mOhm @ 3.3A, 10V	4V @ 280µA	13 nC @ 10 V	±20V	700 pF @ 300 V	-	35W (Tc)	150°C	-	-	Through Hole	TO-220SIS
TK6A60W,S4VX MOSFET N-CH 600V 6.2A TO220SIS Toshiba Semiconductor and Storage	40	RFQ	Datasheet	DTMOSIV	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	6.2A (Ta)	10V	750mOhm @ 3.1A, 10V	3.7V @ 310µA	12 nC @ 10 V	±30V	390 pF @ 300 V	-	30W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK10Q60W,S1VQ MOSFET N-CH 600V 9.7A IPAK Toshiba Semiconductor and Storage	75	RFQ	Datasheet	DTMOSIV	TO-251-3 Stub Leads, IPAK	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	9.7A (Ta)	10V	430mOhm @ 4.9A, 10V	3.7V @ 500µA	20 nC @ 10 V	±30V	700 pF @ 300 V	-	80W (Tc)	150°C (TJ)	-	-	Through Hole	IPAK
DMNH4005SCT MOSFET N-CH 40V 150A TO220AB Diodes Incorporated	30	RFQ	Datasheet	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	40 V	150A (Tc)	10V	4mOhm @ 20A, 10V	3V @ 250µA	48 nC @ 10 V	20V	2846 pF @ 20 V	-	165W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB
TK13A45D(STA4,Q,M) MOSFET N-CH 450V 13A TO220SIS Toshiba Semiconductor and Storage	32	RFQ	Datasheet	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	450 V	13A (Ta)	10V	460mOhm @ 6.5A, 10V	4V @ 1mA	25 nC @ 10 V	±30V	1350 pF @ 25 V	-	45W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS

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