Toshiba Semiconductor and Storage TK8A55DA(STA4,Q,M)

Overview

TK8A55DA(STA4,Q,M) from TOSHIBA is a silicon N-channel power MOSFET in the π-MOSⅦ family, designed for high-voltage switching regulator applications. It features 550 V drain-source breakdown voltage, 0.9 Ω typical R_DS(ON), 3.0 S typical forward transfer admittance, and 7.5 A continuous drain current - enabling efficient DC-DC conversion in industrial SMPS.

For engineers reviewing the TK8A55DA(STA4,Q,M) datasheet, TK8A55DA(STA4,Q,M) pinout, TK8A55DA(STA4,Q,M) application, or TK8A55DA(STA4,Q,M) equivalent, key selection criteria include avalanche ruggedness (163 mJ single-pulse), gate threshold range (2.0–4.0 V), thermal resistance (3.125 °C/W channel-to-case), and SC-67 package compatibility with through-hole PCB layouts.

Technical Context

This MOSFET employs a planar vertical structure optimized for high-voltage hard-switching operation. Its enhancement-mode gate enables direct microcontroller drive without level-shifting, while low Crss (4 pF) and Qgd (6 nC) support fast, low-loss turn-off in flyback and forward converters.

The device integrates an intrinsic body diode with 1200 ns reverse recovery time and 10 μC Qrr, making it suitable for discontinuous conduction mode (DCM) topologies where diode conduction occurs during dead-time. Avalanche-rated design allows reliable operation under inductive load switching stress without external snubbers.

Key Specifications

Pinout & Package

TK8A55DA(STA4,Q,M) is housed in the JEITA SC-67 package (TOSHIBA designation 2-10U1B), a through-hole, 3-pin outline with isolated tab (drain-connected). The package provides mechanical robustness and thermal path via copper leadframe and exposed metal tab.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP8NK50ZFP and IRFBC40APBF, TK8A55DA(STA4,Q,M) uniquely balances 550 V rating, 163 mJ avalanche capability, and SC-67 through-hole compatibility - making it optimal for cost-sensitive, high-reliability industrial SMPS where voltage margin and ruggedness outweigh minimal R_DS(ON) advantage.

Availability

TK8A55DA(STA4,Q,M) is available at Aetrix Electronics and suitable for industrial SMPS, AC-DC adapters, LED street lighting, and telecom rectifiers requiring stable component supply across multi-year production cycles.

Supply support for TK8A55DA(STA4,Q,M) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on reliability, efficiency, and industrial-grade performance.

The π-MOSⅦ series - including TK8A55DA(STA4,Q,M) - was developed specifically for high-voltage switching regulators and offline power supplies demanding low conduction loss, robust avalanche behavior, and long-term thermal stability.

FAQ

What is the maximum continuous drain current for TK8A55DA(STA4,Q,M) at 25°C case temperature?

The TK8A55DA(STA4,Q,M) supports 7.5 A continuous drain current (I_D) at T_c = 25°C, as specified in its Absolute Maximum Ratings table. This rating assumes proper heatsinking to maintain channel temperature ≤150°C. At elevated case temperatures, derating is required per the PD–T_c curve in the datasheet - e.g., ~4.5 A at T_c = 100°C.

Does TK8A55DA(STA4,Q,M) have a built-in body diode, and what are its key parameters?

Yes, TK8A55DA(STA4,Q,M) includes an integrated body diode. Its key parameters include forward voltage V_DSF = −1.7 V at I_DR = 7.5 A and V_GS = 0 V, reverse recovery time t_rr = 1200 ns, and reverse recovery charge Q_rr = 10 μC under specified test conditions. These values indicate suitability for DCM operation but require careful layout to manage diode switching noise.

Is TK8A55DA(STA4,Q,M) suitable for use in a 400 VDC bus application?

Yes, TK8A55DA(STA4,Q,M) is suitable for 400 VDC bus applications. With a guaranteed V_(BR)DSS of 550 V minimum and 163 mJ single-pulse avalanche energy, it provides 37.5% voltage margin above 400 V - sufficient to absorb transient overvoltages and switching spikes common in industrial DC bus environments.

What is the gate threshold voltage range for TK8A55DA(STA4,Q,M), and how does it affect drive requirements?

The gate threshold voltage V_th for TK8A55DA(STA4,Q,M) is 2.0–4.0 V at V_DS = 10 V and I_D = 1 mA. This range ensures reliable turn-on with standard 3.3 V or 5 V logic outputs, but full enhancement (to achieve 0.9 Ω R_DS(ON)) requires V_GS ≥ 10 V. A gate driver capable of sourcing/sinking ≥16 nC is recommended for fast switching.

What package type does TK8A55DA(STA4,Q,M) use, and is it RoHS-compliant?

TK8A55DA(STA4,Q,M) uses the JEITA SC-67 package (TOSHIBA 2-10U1B), a through-hole 3-pin outline with drain-connected metal tab. It is RoHS-compliant, as confirmed by the [[G]]/RoHS [[Pb]] marking on the device body and compliance with EU Directive 2011/65/EU - verified in Toshiba's official product documentation and environmental declarations.