Toshiba Semiconductor and Storage TK12A50W,S5X

Overview

TK12A50W from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel super-junction MOSFET designed for high-voltage switching in offline power supplies. It delivers 500 V drain-source breakdown voltage, 11.5 A DC drain current, and low 0.265 Ω (typ.) R_DS(ON) at V_GS = 10 V, enabling efficient operation in AC-DC adapters and industrial SMPS.

For engineers reviewing the TK12A50W datasheet, TK12A50W pinout, TK12A50W application, or TK12A50W equivalent, key selection factors include its TO-220SIS package thermal performance (R_th(ch-c) = 3.57 °C/W), avalanche ruggedness (E_AS = 215 mJ), and gate threshold range (2.7–3.7 V) for reliable drive compatibility with standard PWM controllers.

Technical Context

This device implements Toshiba's DTMOS™ (Double-diffused Trench MOS) super-junction architecture to achieve high voltage blocking with low conduction loss. Its enhancement-mode operation and 30 V gate-source rating support robust gate drive design across wide input voltage ranges.

Dynamic characteristics include C_iss = 890 pF, Q_g = 25 nC, and dv/dt ruggedness ≥50 V/ns - parameters critical for minimizing switching losses and ensuring noise immunity in hard-switched flyback and PFC stages.

Key Specifications

Pinout & Package

TK12A50W is housed in a TO-220SIS (JEITA SC-67) package with isolated tab, enabling direct heatsinking while maintaining electrical isolation between drain and mounting surface. The 3-pin configuration supports simple PCB layout and thermal management in compact power supplies.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP12NM50N and IPP60R190C7, the TK12A50W offers unique value in thermally demanding, safety-isolation-critical applications due to its TO-220SIS package and optimized Q_g/R_DS(ON) trade-off - not merely a voltage or current substitute.

Availability

TK12A50W is available at Aetrix Electronics and suitable for AC-DC adapters, industrial SMPS, and LED driver power supplies requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for TK12A50W includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with decades of expertise in high-reliability discrete components.

The TK12A50W belongs to Toshiba's DTMOS™ super-junction MOSFET product line, engineered specifically for high-efficiency, high-voltage switching in compact offline power conversion systems.

FAQ

What is the maximum continuous junction temperature for the TK12A50W?

The TK12A50W has a maximum channel temperature (T_ch) rating of 150 °C. This limit must be respected under all operating conditions, including transient loads and ambient temperature extremes. Thermal design must ensure that actual channel temperature - calculated using R_th(ch-c) = 3.57 °C/W and measured case temperature - remains below this threshold to maintain reliability and avoid parametric shift. The TK12A50W datasheet specifies derating curves for power dissipation versus case temperature.

Does the TK12A50W have an integrated body diode, and what are its recovery characteristics?

Yes, the TK12A50W includes a parasitic body diode with reverse recovery time (t_rr) of 250 ns (typ.) and reverse recovery charge (Q_rr) of 2.3 µC (typ.) at I_DR = 5.8 A. These values are measured under standardized conditions (V_DD = 400 V, dI_DR/dt = 100 A/µs) and directly impact EMI and efficiency in synchronous rectification or bidirectional topologies. The TK12A50W's diode dv/dt ruggedness exceeds 15 V/ns, supporting robust operation in fast-switching circuits.

Is the TK12A50W RoHS compliant, and how is compliance indicated on the device marking?

Yes, the TK12A50W is RoHS compliant. Per Toshiba's marking convention, RoHS-compliant units feature an underlined lot number on the package, accompanied by "[G]" or "[G]/RoHS" designation. Non-underlined markings indicate lead-containing versions. The TK12A50W revision 2.0.B documentation confirms RoHS compatibility per Directive 2011/65/EU, and Aetrix Electronics supplies only RoHS-compliant TK12A50W units unless otherwise specified.

Can the TK12A50W be used in avalanche mode, and what is its rated single-pulse energy?

Yes, the TK12A50W is fully rated for single-pulse avalanche operation with guaranteed E_AS = 215 mJ at T_ch = 25 °C. This specification is validated per JEDEC JESD24-1 and applies under defined test conditions (V_DD = 90 V, L = 40.7 mH, R_G = 25 Ω, I_AR = 3.0 A). Engineers may rely on this rating for inductive switching protection in flyback, forward, and resonant converters without adding external clamps - provided peak channel temperature remains within limits during the event. The TK12A50W datasheet includes SOA and avalanche curves for design validation.

What gate drive voltage range is recommended for reliable operation of the TK12A50W?

The TK12A50W is specified for gate-source voltage (V_GS) from ±30 V absolute maximum, with enhancement-mode threshold (V_th) between 2.7 V and 3.7 V. For robust saturation and minimal R_DS(ON), a minimum V_GS of 10 V is recommended - delivering the rated 0.265 Ω (typ.). Driving at 12–15 V further reduces conduction loss but increases gate charge demand. The TK12A50W's low gate leakage (<1 µA) ensures compatibility with standard PWM ICs and microcontroller GPIOs when buffered appropriately.