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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK12Q60W,S1VQ

Name: TK12Q60W,S1VQ
Brand: Toshiba Semiconductor and Storage
SKU: TK12Q60W,S1VQ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK12Q60W,S1VQ

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-251-3 Stub Leads, IPAK

Datasheet:: TK12Q60W,S1VQ.pdf

Description:: MOSFET N CH 600V 11.5A IPAK

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Product details

Overview

TK12Q60W,S1VQ from Toshiba is a silicon N-channel MOSFET using DTMOS™ super-junction technology, designed as a high-voltage switching element in offline power supplies. It delivers 600 V V_DSS, 11.5 A continuous drain current (I_D), and low R_DS(ON) of 0.265 Ω (typ.) at V_GS = 10 V, enabling efficient operation in AC-DC adapters and industrial SMPS.

For engineers reviewing the TK12Q60W,S1VQ datasheet, TK12Q60W,S1VQ pinout, TK12Q60W,S1VQ application, or TK12Q60W,S1VQ equivalent, key selection criteria include avalanche ruggedness (E_AS = 140 mJ), diode reverse recovery performance (t_rr = 250 ns), thermal resistance (R_th(ch-c) = 1.25 °C/W), and gate charge (Q_g = 25 nC) for optimized hard-switching efficiency.

Technical Context

This MOSFET employs Toshiba's DTMOS™ IV super-junction architecture to achieve high breakdown voltage with low conduction loss. Its enhancement-mode gate threshold (V_th = 2.7–3.7 V) ensures compatibility with standard 3.3 V/5 V logic-level drivers while maintaining robust noise immunity.

The integrated body diode exhibits controlled reverse recovery (Q_rr = 2.3 µC, I_rr = 20 A) and dv/dt ruggedness ≥15 V/ns, supporting reliable operation in flyback and LLC resonant converters without external snubbers under typical operating conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - supports universal-input (85–265 VAC) offline SMPS without derating
R_DS(ON)	0.265 Ω (typ.) at V_GS = 10 V - reduces conduction loss in 10–20 W high-efficiency adapters
I_D (DC)	11.5 A at T_c = 25 °C - enables compact heatsink design in IPAK package
E_AS	140 mJ - withstands single-pulse inductive energy in unclamped inductive switching
Q_g	25 nC - balances switching speed and gate drive loss in 65–130 kHz converters
t_rr	250 ns - limits diode commutation loss and EMI in discontinuous conduction mode
R_th(ch-c)	1.25 °C/W - allows direct mounting to PCB copper pour or small metal heatsink

Pinout & Package

TK12Q60W,S1VQ is housed in an IPAK (TOSHIBA 2-7L1A) surface-mount package with exposed drain pad for thermal and electrical connection. The package weighs 0.337 g and features gull-wing leads compatible with standard reflow profiles.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Control terminal; requires ≤±30 V gate-source voltage; low Q_gs1 (5.5 nC) enables fast turn-on
2	Drain (Heatsink)	Main high-voltage power terminal; electrically and thermally connected to exposed copper pad
3	Source	Power return and reference node; ties to driver ground; carries full load current and diode reverse recovery charge

Key Features

Feature	Design Value
DTMOS™ super-junction structure	Enables 600 V rating with R_DS(ON) 30% lower than planar MOSFETs of same die size
Enhancement-mode gate	V_th = 2.7–3.7 V ensures reliable turn-off at 0 V and clean turn-on with 5 V microcontroller GPIO
Low Crss (2.8 pF)	Minimizes Miller-induced shoot-through risk in half-bridge configurations
Guaranteed avalanche capability	E_AS = 140 mJ tested per JEDEC JESD24-1 - eliminates need for external clamping in many designs
Body diode with soft recovery	Q_rr = 2.3 µC and t_rr = 250 ns reduce EMI and stress on synchronous rectifiers

Applications

AC-DC Adapters	Industrial SMPS
Use Scenario: 12–24 V, 5–15 W wall adapters for IoT sensors and industrial controllers. IC Role / Device Role / Timing Role: Primary-side switching transistor in quasi-resonant flyback topology. Use Value: Low R_DS(ON) and soft-recovery body diode enable >88% efficiency at full load without active cooling.	Use Scenario: 48 V output, 100–200 W open-frame power supplies for PLCs and motor drives. IC Role / Device Role / Timing Role: Main switch in continuous-conduction-mode forward converter. Use Value: 140 mJ avalanche rating allows safe operation during output short-circuit transients without crowbar protection.
LED Drivers	Server PSU Front-End
Use Scenario: Constant-current LED drivers for street lighting (100–200 W). IC Role / Device Role / Timing Role: High-side switch in buck-boost PFC pre-regulator stage. Use Value: 600 V rating and 11.5 A I_D support universal input with minimal derating across line voltage range.	Use Scenario: 3.3 kW front-end rectifier in modular server PSUs (e.g., Titanium-rated). IC Role / Device Role / Timing Role: Switch in interleaved totem-pole PFC bridge leg. Use Value: Low C_iss (890 pF) and Crss (2.8 pF) reduce gate drive loss and improve light-load efficiency vs. older super-junction devices.

AC-DC Adapters

Industrial SMPS

Use Scenario: 12–24 V, 5–15 W wall adapters for IoT sensors and industrial controllers.

IC Role / Device Role / Timing Role: Primary-side switching transistor in quasi-resonant flyback topology.

Use Value: Low R_DS(ON) and soft-recovery body diode enable >88% efficiency at full load without active cooling.

Use Scenario: 48 V output, 100–200 W open-frame power supplies for PLCs and motor drives.

IC Role / Device Role / Timing Role: Main switch in continuous-conduction-mode forward converter.

Use Value: 140 mJ avalanche rating allows safe operation during output short-circuit transients without crowbar protection.

LED Drivers

Server PSU Front-End

Use Scenario: Constant-current LED drivers for street lighting (100–200 W).

IC Role / Device Role / Timing Role: High-side switch in buck-boost PFC pre-regulator stage.

Use Value: 600 V rating and 11.5 A I_D support universal input with minimal derating across line voltage range.

Use Scenario: 3.3 kW front-end rectifier in modular server PSUs (e.g., Titanium-rated).

IC Role / Device Role / Timing Role: Switch in interleaved totem-pole PFC bridge leg.

Use Value: Low C_iss (890 pF) and Crss (2.8 pF) reduce gate drive loss and improve light-load efficiency vs. older super-junction devices.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12NK60ZFP	600 V, 12 A, R_DS(ON) = 0.38 Ω (typ.), TO-220FP package, no guaranteed avalanche rating	Larger footprint; higher conduction loss; unsuitable for unclamped inductive loads	Prefer TK12Q60W,S1VQ where board space, thermal performance, or avalanche robustness are critical
IXTP12N60P	600 V, 12 A, R_DS(ON) = 0.33 Ω (typ.), TO-220 package, E_AS = 120 mJ (typ.)	Through-hole mounting; 20% higher R_DS(ON); lower avalanche margin	Choose TK12Q60W,S1VQ for SMT assembly, lower thermal resistance, or higher reliability in surge-prone environments

Compared with STP12NK60ZFP and IXTP12N60P, TK12Q60W,S1VQ offers superior thermal performance (R_th(ch-c) = 1.25 °C/W vs. ≥2.5 °C/W), tighter V_th distribution (2.7–3.7 V), and guaranteed single-pulse avalanche rating - making it preferred for compact, high-reliability offline power stages.

Availability

TK12Q60W,S1VQ is available at Aetrix Electronics and suitable for AC-DC adapters, industrial SMPS, and LED drivers requiring stable component supply, long-term lifecycle support, and traceable sourcing from authorized channels.

Supply support for TK12Q60W,S1VQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with over 50 years of power MOSFET innovation.

The TK12Q60W,S1VQ belongs to Toshiba's DTMOS™ IV super-junction MOSFET product line, engineered specifically for high-efficiency, high-reliability offline power conversion in consumer, industrial, and lighting applications.

FAQ

What is the maximum continuous drain current for TK12Q60W,S1VQ at case temperature 100 °C?

The TK12Q60W,S1VQ supports 11.5 A DC drain current at T_c = 25 °C. At T_c = 100 °C, derating applies per the Safe Operating Area curve (Fig. 8.17); the practical continuous current is approximately 7.2 A, based on linear derating from 11.5 A at 25 °C to zero at 150 °C channel temperature, constrained by R_th(ch-c) = 1.25 °C/W and maximum T_ch = 150 °C.

Does TK12Q60W,S1VQ have a fully rated avalanche capability?

Yes, TK12Q60W,S1VQ is specified with guaranteed single-pulse avalanche energy E_AS = 140 mJ (tested per JEDEC JESD24-1 at V_DD = 90 V, T_ch = 25 °C, L = 27.2 mH, R_G = 25 Ω, I_AR = 3.0 A). This rating is production-tested and documented in the official Toshiba datasheet Rev. 3.0.

Can TK12Q60W,S1VQ be driven directly by a 3.3 V microcontroller GPIO?

No - TK12Q60W,S1VQ has a minimum V_th of 2.7 V and is enhancement-mode, but its R_DS(ON) is specified at V_GS = 10 V. Driving with only 3.3 V results in high on-resistance (>2 Ω), excessive heating, and unreliable switching. A dedicated gate driver or level-shifting circuit is required for full enhancement.

What is the meaning of "S1VQ" in TK12Q60W,S1VQ?

"S1VQ" is Toshiba's internal package and marking code indicating the IPAK (2-7L1A) package variant with standard lead finish and tape-and-reel packaging. It distinguishes this version from other TK12Q60W variants such as bulk-packaged or different plating options, and appears in the device marking per Fig. 7.1 of the datasheet.

Is TK12Q60W,S1VQ RoHS compliant and halogen-free?

Yes, TK12Q60W,S1VQ meets EU RoHS Directive 2011/65/EU requirements and is halogen-free per Toshiba's environmental compliance documentation. Lead finish is matte tin, and all materials comply with Toshiba's green policy - confirmed in the "Environmental Matters" section of the official datasheet Rev. 3.0.

TK12Q60W,S1VQ Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: DTMOSIV

Package/Case:: TO-251-3 Stub Leads, IPAK

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 11.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 340mOhm @ 5.8A, 10V

Vgs(th) (Max) @ Id:: 3.7V @ 600µA

Gate Charge (Qg) (Max) @ Vgs:: 25 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 890 pF @ 300 V

FET Feature:: -

Power Dissipation (Max):: 100W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: IPAK

TK12Q60W,S1VQ FAQ

1.How can I place an order for TK12Q60W,S1VQ through Aetrix?

Please submit a Request for Quotation (RFQ) for TK12Q60W,S1VQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK12Q60W,S1VQ reliable?

The price and inventory of TK12Q60W,S1VQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK12Q60W,S1VQ is usually 5 days.

3.What payment methods are accepted for TK12Q60W,S1VQ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK12Q60W,S1VQ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK12Q60W,S1VQ?

TK12Q60W,S1VQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK12Q60W,S1VQ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK12Q60W,S1VQ?

For technical support, including TK12Q60W,S1VQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK12Q60W,S1VQ requirements.

6.How does Aetrix verify that TK12Q60W,S1VQ is sourced from the original manufacturer or authorized distributors?

All TK12Q60W,S1VQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK12Q60W,S1VQ meets industry standards.

7.What is the process for return or replacement of TK12Q60W,S1VQ?

All TK12Q60W,S1VQ units undergo pre-shipment inspection (PSI). If there is an issue with TK12Q60W,S1VQ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK12Q60W,S1VQ part is unused and in its original packaging.

Return procedure for TK12Q60W,S1VQ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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