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Toshiba Semiconductor and Storage TK7A60W,S4VX

Part No.:
TK7A60W,S4VX
Manufacturer:
Toshiba Semiconductor and Storage
Category:
FETs, MOSFETs
Package:
TO-220-3 Full Pack
Datasheet:
AetrixTK7A60W,S4VX.pdf
Description:
MOSFET N-CH 600V 7A TO220SIS
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:40

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Product details

Overview

TK7A60W,S4VX from Toshiba is a silicon N-channel MOSFET using Super Junction DTMOS™ structure, designed for high-voltage switching in offline AC-DC power supplies and DC-DC converters. It delivers 600 V VDSS, 7.0 A continuous drain current (TC = 25 °C), and typ. RDS(ON) = 0.5 Ω at VGS = 10 V - enabling efficient operation in 65–100 W SMPS designs.

For engineers reviewing the TK7A60W,S4VX datasheet, TK7A60W,S4VX pinout, TK7A60W,S4VX application, or TK7A60W,S4VX equivalent, this device is evaluated for high-voltage flyback and PFC stage use where low conduction loss, avalanche ruggedness (EAS = 92 mJ), and gate-drive simplicity are critical selection criteria.

Technical Context

This MOSFET employs Toshiba's DTMOS™ IV process with optimized super junction cell design to achieve low RDS(ON) × Qg figure-of-merit (typ. 15 nC total gate charge). Its enhancement-mode threshold voltage (2.7–3.7 V) ensures reliable turn-on with standard 5 V or 10 V gate drivers.

Thermal performance is defined by Rth(ch-c) = 4.17 °C/W and channel temperature limit of 150 °C. The TO-220SIS package provides internal source-isolation (2000 VRMS isolation voltage), enabling direct mounting on heatsinks without insulating pads in isolated topologies.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 600 V - supports universal-input (85–265 VAC) offline SMPS with sufficient margin against reflected transients.
RDS(ON) (typ.) 0.5 Ω at VGS = 10 V - reduces conduction loss in 7 A continuous applications, e.g., 65 W adapter primary switch.
ID (DC) 7.0 A at TC = 25 °C - defines maximum steady-state current before thermal derating; usable up to ~4.5 A at TC = 100 °C.
EAS 92 mJ - enables robust single-pulse avalanche capability during overvoltage events without external clamping in flyback designs.
Ciss 490 pF at VDS = 300 V - impacts gate drive power and switching speed; compatible with standard 1–2 W gate drivers.
Vth 2.7–3.7 V - ensures clean turn-on with TTL/CMOS-compatible controllers and avoids spurious switching near ground.
Qg 15 nC - determines gate driver current requirement (e.g., 1.5 A peak for 10 ns rise time); balances switching loss vs. drive complexity.

Pinout & Package

TO-220SIS (JEITA SC-67 / Toshiba 2-10U1S) package with internal source-isolation barrier rated at 2000 VRMS. Mounting torque: 0.6 N·m. Weight: 1.7 g (typ.).

Pin/Terminal Circuit Role Design Meaning
1: Gate Control terminal Receives gate drive signal; requires <1 µA leakage (IGSS ≤ ±1 µA) and ESD-safe handling due to MOSFET sensitivity.
2: Drain High-side power terminal Connected to primary winding/high-voltage rail; withstands 600 V blocking and handles avalanche energy up to 92 mJ.
3: Source Reference terminal Internally isolated from case; serves as return path for ID and gate drive reference - eliminates need for insulating hardware in isolated converters.

Key Features

Feature Design Value
Super Junction DTMOS™ structure Enables 0.5 Ω RDS(ON) at 600 V rating - improves efficiency over planar MOSFETs in same package without sacrificing voltage capability.
Source-isolated TO-220SIS package Provides 2000 VRMS isolation between source and heatsink - simplifies mechanical design and reduces BOM count in isolated topologies.
Low Qgd/Qg ratio (8.0/15 nC) Reduces Miller effect and improves hard-switching robustness - supports stable operation in discontinuous conduction mode (DCM) flyback.
Guaranteed avalanche energy (EAS) 92 mJ at Tch = 25 °C - allows safe operation under transient overvoltage without external snubbers in cost-sensitive consumer power supplies.
Enhancement-mode Vth 2.7–3.7 V range - ensures predictable turn-on with standard PWM ICs (e.g., UC384x, VIPer series) and avoids false triggering.

Applications

AC-DC Adapter Primary Switch LED Driver Flyback Stage

Use Scenario: 65 W universal-input offline adapter for laptops and monitors operating in DCM flyback topology.

IC Role / Device Role / Timing Role: Main high-side switching element synchronized to controller PWM; handles 600 V blocking and 7 A peak currents.

Use Value: Low RDS(ON) reduces conduction loss by ~15% vs. comparable 0.65 Ω MOSFETs, improving full-load efficiency to >88%.

Use Scenario: Constant-voltage LED driver powering commercial downlights (24–48 V output, 1–2 A).

IC Role / Device Role / Timing Role: Primary-side power switch in isolated flyback; operates at 65–100 kHz with zero-voltage switching assistance.

Use Value: Source-isolation eliminates need for thermal pad + insulator, reducing assembly cost and thermal resistance by ~1.2 °C/W.

PFC Boost Switch Industrial SMPS Input Stage

Use Scenario: 110 W active PFC front-end in industrial power supply meeting IEC 61000-3-2 Class C.

IC Role / Device Role / Timing Role: Fast-switching boost switch operating in continuous conduction mode (CCM) at 65 kHz.

Use Value: Low Ciss (490 pF) and Qg (15 nC) minimize gate drive loss and enable >95% PFC efficiency at 230 VAC.

Use Scenario: 100 W open-frame power supply for factory automation controllers requiring long-term reliability.

IC Role / Device Role / Timing Role: Primary-side switching transistor in dual-switch forward converter with synchronous rectification.

Use Value: Guaranteed EAS (92 mJ) and 150 °C Tch rating support operation under brownout and surge conditions per IEC 61000-4-5.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STP7NK60ZFP RDS(ON) = 0.75 Ω (typ.), TO-220FP package without source isolation, EAS = 60 mJ. Lacks internal source-isolation; requires external insulator for heatsink mounting in isolated topologies. Lower cost alternative where isolation is implemented externally and higher RDS(ON) is acceptable.
FQP6N60C RDS(ON) = 0.7 Ω (typ.), TO-220 package (non-isolated), Qg = 18 nC, no guaranteed EAS spec. No isolation rating or specified avalanche capability - unsuitable for unclamped inductive switching. Suitable only in non-isolated or clamped topologies with conservative voltage derating.

Compared with STP7NK60ZFP and FQP6N60C, the TK7A60W,S4VX offers lower conduction loss, certified source-isolation, and guaranteed avalanche ruggedness - making it preferred for compact, isolated, and reliability-critical 60–100 W power supplies where layout space and thermal management are constrained.

Availability

TK7A60W,S4VX is available at Aetrix Electronics and suitable for AC-DC adapters, LED drivers, and industrial SMPS requiring stable component supply, long-lifecycle support, and RoHS-compliant sourcing.

Supply support for TK7A60W,S4VX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions, with decades of expertise in high-voltage MOSFET technology.

The TK7A60W,S4VX belongs to Toshiba's DTMOS™ IV super junction MOSFET product line, engineered specifically for high-efficiency, high-reliability offline power conversion in consumer and industrial applications.

FAQ

What is the maximum continuous drain current rating for TK7A60W,S4VX?

The TK7A60W,S4VX has a maximum continuous drain current (ID) of 7.0 A at case temperature TC = 25 °C. This rating decreases with rising case temperature - for example, it drops to approximately 4.5 A at TC = 100 °C - and must be applied with proper heatsinking and thermal derating per the datasheet's Safe Operating Area curves.

Does TK7A60W,S4VX require an insulating pad when mounted to a heatsink?

No, the TK7A60W,S4VX uses a TO-220SIS package with internal source-isolation rated at 2000 VRMS. This eliminates the need for external insulating pads or shoulder washers when mounting directly to a grounded heatsink - a key advantage in isolated flyback and PFC designs where creepage/clearance and thermal resistance are critical.

What is the typical gate threshold voltage (Vth) range for TK7A60W,S4VX?

The TK7A60W,S4VX has a guaranteed gate threshold voltage range of 2.7 V to 3.7 V (measured at VDS = 10 V, ID = 0.35 mA). This enhancement-mode specification ensures reliable turn-on with standard 5 V logic-level gate drivers and avoids unintended conduction near 0 V, supporting stable operation in noisy industrial environments.

Is TK7A60W,S4VX suitable for avalanche-prone circuits like flyback converters?

Yes, the TK7A60W,S4VX is fully characterized for single-pulse avalanche operation with a guaranteed EAS of 92 mJ (Tch = 25 °C). This makes it suitable for unclamped inductive switching in flyback topologies, reducing or eliminating the need for external RCD snubbers and improving system reliability under transient overvoltage conditions.

What package type does TK7A60W,S4VX use, and what are its key mechanical identifiers?

The TK7A60W,S4VX uses the TO-220SIS package (JEITA SC-67 / Toshiba 2-10U1S), identifiable by three leads (Gate, Drain, Source), a metal tab with isolated source connection, and marking "TK7A60W" followed by date code and lot traceability. Its weight is 1.7 g (typ.), and recommended mounting torque is 0.6 N·m.

TK7A60W,S4VX Specifications

Product attributes
Attribute value
Manufacturer:
Toshiba Semiconductor and Storage
Series:
DTMOSIV
Package/Case:
TO-220-3 Full Pack
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
600mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id:
3.7V @ 350µA
Gate Charge (Qg) (Max) @ Vgs:
15 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
490 pF @ 300 V
FET Feature:
-
Power Dissipation (Max):
30W (Tc)
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220SIS

TK7A60W,S4VX FAQ

1.How can I place an order for TK7A60W,S4VX through Aetrix?

Please submit a Request for Quotation (RFQ) for TK7A60W,S4VX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK7A60W,S4VX reliable?

The price and inventory of TK7A60W,S4VX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK7A60W,S4VX is usually 5 days.

3.What payment methods are accepted for TK7A60W,S4VX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK7A60W,S4VX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK7A60W,S4VX?

TK7A60W,S4VX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK7A60W,S4VX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK7A60W,S4VX?

For technical support, including TK7A60W,S4VX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK7A60W,S4VX requirements.

6.How does Aetrix verify that TK7A60W,S4VX is sourced from the original manufacturer or authorized distributors?

All TK7A60W,S4VX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK7A60W,S4VX meets industry standards.

7.What is the process for return or replacement of TK7A60W,S4VX?

All TK7A60W,S4VX units undergo pre-shipment inspection (PSI). If there is an issue with TK7A60W,S4VX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK7A60W,S4VX part is unused and in its original packaging.

Return procedure for TK7A60W,S4VX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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