Toshiba Semiconductor and Storage TK56E12N1,S1X

Overview

TK56E12N1,S1X from Toshiba is a silicon N-channel power MOSFET in the U-MOSⅧ-H series, designed as a high-current switching element in DC-DC converters and motor drives. It delivers 112 A DC drain current at T_c = 25°C, features 5.8 mΩ typ. R_DS(ON) at V_GS = 10 V, and supports 120 V drain-source breakdown voltage - enabling efficient operation in 48 V industrial power rails.

For engineers reviewing the TK56E12N1,S1X datasheet, TK56E12N1,S1X pinout, TK56E12N1,S1X application, or TK56E12N1,S1X equivalent, key selection criteria include its TO-220 package thermal performance (R_th(ch-c) = 0.74°C/W), avalanche ruggedness (E_AS = 110 mJ), and gate threshold range (2.0–4.0 V) for reliable PWM control in high-efficiency SMPS designs.

Technical Context

This MOSFET employs Toshiba's U-MOSⅧ-H trench-gate process to achieve low on-resistance and fast switching with controlled Q_g (69 nC typ.) and low Crss (19 pF). Its internal body diode exhibits t_rr = 86 ns and Q_rr = 210 nC under specified conditions, supporting synchronous rectification and hard-switched topologies.

The device operates in enhancement mode with V_th defined at ID = 1.0 mA, and its safe operating area (SOA) is guaranteed up to 150°C channel temperature. Absolute maximum ratings are limited by silicon capability (e.g., 100 A package limit vs. 112 A silicon limit), requiring heatsink design per R_th(ch-a) = 2.77°C/W condition.

Key Specifications

Pinout & Package

TK56E12N1,S1X is housed in a through-hole TO-220 package (Toshiba designation: 2-10X1A), with the drain connected internally to the metal tab for direct heatsink mounting. The package weighs 1.93 g and provides robust thermal conduction via the case interface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP110N12F7, TK56E12N1,S1X offers marginally better R_DS(ON) and lower Q_g, reducing both conduction and switching losses; versus IRFP4668PBF, it trades 0.6 mΩ R_DS(ON) for 36 nC lower Q_g and TO-220 compatibility - favoring cost-sensitive, space-constrained industrial SMPS over ultra-low-loss designs.

Availability

TK56E12N1,S1X is available at Aetrix Electronics and suitable for industrial DC-DC converters, motor drive inverters, and telecom rectifier modules requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for TK56E12N1,S1X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on energy efficiency, reliability, and industrial-grade performance.

The TK56E12N1,S1X belongs to Toshiba's U-MOSⅧ-H power MOSFET family, engineered specifically for high-current, high-voltage switching in industrial power supplies and motor control systems where thermal robustness and avalanche capability are critical.

FAQ

What is the maximum continuous drain current rating for TK56E12N1,S1X?

The TK56E12N1,S1X is rated for 112 A DC drain current at case temperature T_c = 25°C. This rating assumes ideal heatsinking; actual usable current depends on thermal design - for example, at T_c = 100°C, the derated I_D drops to approximately 65 A per the SOA curve. Always verify channel temperature remains ≤150°C using R_th(ch-c) = 0.74°C/W in thermal calculations.

Does TK56E12N1,S1X have avalanche capability, and how is it specified?

Yes, TK56E12N1,S1X has guaranteed single-pulse avalanche energy of 110 mJ (E_AS) at T_ch = 25°C, tested with V_DD = 80 V, L = 34.4 µH, and I_AR = 56 A. This rating validates ruggedness against inductive switching stress in motor drives and relay loads. Repeated avalanche events are not guaranteed and require system-level analysis per Toshiba's Reliability Handbook.

What is the gate threshold voltage range for TK56E12N1,S1X, and why does it matter?

The TK56E12N1,S1X has a gate threshold voltage (V_th) range of 2.0–4.0 V at V_DS = 10 V and I_D = 1.0 mA. This wide range ensures reliable turn-on across process variation and temperature extremes. Designers must ensure gate drive exceeds 4.0 V to guarantee full enhancement - especially critical in 3.3 V logic-driven applications where marginal bias may cause partial conduction and overheating.

Can TK56E12N1,S1X be used in synchronous rectification topologies?

Yes, TK56E12N1,S1X supports synchronous rectification due to its characterized body diode parameters: reverse recovery time t_rr = 86 ns and reverse recovery charge Q_rr = 210 nC at specified test conditions. These values enable predictable timing control in LLC and forward converters. However, its relatively high Q_rr means careful dead-time optimization is required to avoid cross-conduction losses in high-frequency designs.

Is TK56E12N1,S1X RoHS compliant and lead-free?

Yes, TK56E12N1,S1X is RoHS compliant and lead-free, meeting EU Directive 2011/65/EU requirements. Toshiba confirms this status in its environmental compliance documentation. For full material declarations and exemption details (e.g., lead content in die attach), refer to Toshiba's official product environmental report for TK56E12N1,S1X, accessible via their semiconductor portal.