Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK7A80W,S4X

Name: TK7A80W,S4X
Brand: Toshiba Semiconductor and Storage
SKU: TK7A80W,S4X
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: TK7A80W,S4X

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: TK7A80W,S4X.pdf

Description:: PB-F POWER MOSFET TRANSISTOR TO-

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:50

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

TK7A80W,S4X from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel super-junction MOSFET designed for high-voltage switching in offline power supplies. It features 800 V drain-source breakdown voltage, 0.795 Ω typical R_DS(ON) at V_GS = 10 V and I_D = 3.3 A, 6.5 A DC drain current, and TO-220SIS package with isolated source terminal - optimized for flyback and LLC resonant converters.

For engineers reviewing the TK7A80W,S4X datasheet, TK7A80W,S4X pinout, TK7A80W,S4X application, or TK7A80W,S4X equivalent, this device is selected for high-efficiency AC-DC adapters, industrial SMPS, and LED drivers requiring rugged 800 V operation, low conduction loss, and avalanche energy rating of 310 mJ.

Technical Context

This DTMOS™-based super-junction MOSFET uses charge compensation technology to achieve low R_DS(ON) while maintaining fast switching and high dv/dt ruggedness (≥50 V/ns). Its enhancement-mode gate threshold (3–4 V) enables direct drive from standard PWM controllers without level-shifting.

The TO-220SIS package provides internal source isolation (2000 V_RMS), enabling high-side configuration in half-bridge topologies. Thermal resistance R_th(ch-c) = 3.57 °C/W supports reliable operation at T_ch ≤ 150 °C under forced-air cooling.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	800 V - supports universal-input AC-DC designs up to 380 V_AC rectified peak.
R_DS(ON) (typ.)	0.795 Ω at V_GS = 10 V, I_D = 3.3 A - reduces conduction loss in 65–100 W SMPS stages.
I_D (DC)	6.5 A - enables continuous output power up to ~85 W with proper heatsinking.
E_AS	310 mJ - withstands single-pulse inductive energy in hard-switched flyback snubbers.
Q_g (typ.)	13 nC - balances gate drive loss and switching speed for 65–135 kHz operation.
dv/dt ruggedness	≥50 V/ns - suppresses false turn-on during high di/dt commutation in bridge circuits.
V_th	3–4 V - compatible with 5 V and 12 V gate drivers without external biasing.

Pinout & Package

TO-220SIS (JEITA SC-67 / Toshiba 2-10U1S) package with electrically isolated source terminal (2000 V_RMS isolation), 1.7 g mass, and screw-mount compatibility. Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Receives PWM signal; threshold voltage 3–4 V ensures TTL/CMOS logic-level compatibility.
2 (Drain)	High-voltage power input	Connected to primary winding or bus rail; rated for 800 V repetitive blocking.
3 (Source)	Current return path	Internally isolated from case; enables floating-source configurations in high-side switches.

Key Features

Feature	Design Value
Super-junction DTMOS™ structure	Reduces R_DS(ON) × area by >40% vs. planar MOSFETs, enabling smaller heatsinks in compact adapters.
Isolated source terminal	Eliminates need for separate isolation components in high-side half-bridge or active clamp circuits.
Low Q_gd/Q_g ratio (4/13 nC)	Improves Miller immunity and enables stable operation under high dv/dt stress in LLC resonant converters.
Enhancement-mode V_th	Ensures fail-safe off-state during power-up, brown-out, or controller reset - critical for safety-compliant SMPS.

Applications

Industrial AC-DC Power Supplies	LED Driver Power Stages
Use Scenario: 75 W open-frame power supply for PLC I/O modules operating from 85–264 V_AC. IC Role / Device Role / Timing Role: Primary-side switch in discontinuous conduction mode (DCM) flyback topology. Use Value: 0.795 Ω R_DS(ON) minimizes conduction loss at full load, improving efficiency to >87% at 230 V_AC.	Use Scenario: Constant-current LED driver for street lighting with surge immunity to 4 kV line-to-line. IC Role / Device Role / Timing Role: Main switching element in buck-boost PFC + isolated flyback architecture. Use Value: 310 mJ avalanche energy rating absorbs line transients without clamping diodes, reducing BOM count.
Telecom Wall Adapters	Appliance SMPS
Use Scenario: 65 W USB-C PD adapter with dual-output (5 V/3 A, 20 V/3.25 A) and no-fan cooling. IC Role / Device Role / Timing Role: Primary-side switch in quasi-resonant (QR) flyback with valley switching. Use Value: Low C_oss (20 pF) and fast t_f (8 ns) enable efficient zero-voltage switching across wide load range.	Use Scenario: 90 W auxiliary power supply in washing machine main control board. IC Role / Device Role / Timing Role: High-side switch in half-bridge configuration driving transformer primary. Use Value: TO-220SIS source isolation eliminates need for bootstrap capacitors or level-shifters in high-side gate drive.

Industrial AC-DC Power Supplies

LED Driver Power Stages

Use Scenario: 75 W open-frame power supply for PLC I/O modules operating from 85–264 V_AC.

IC Role / Device Role / Timing Role: Primary-side switch in discontinuous conduction mode (DCM) flyback topology.

Use Value: 0.795 Ω R_DS(ON) minimizes conduction loss at full load, improving efficiency to >87% at 230 V_AC.

Use Scenario: Constant-current LED driver for street lighting with surge immunity to 4 kV line-to-line.

IC Role / Device Role / Timing Role: Main switching element in buck-boost PFC + isolated flyback architecture.

Use Value: 310 mJ avalanche energy rating absorbs line transients without clamping diodes, reducing BOM count.

Telecom Wall Adapters

Appliance SMPS

Use Scenario: 65 W USB-C PD adapter with dual-output (5 V/3 A, 20 V/3.25 A) and no-fan cooling.

IC Role / Device Role / Timing Role: Primary-side switch in quasi-resonant (QR) flyback with valley switching.

Use Value: Low C_oss (20 pF) and fast t_f (8 ns) enable efficient zero-voltage switching across wide load range.

Use Scenario: 90 W auxiliary power supply in washing machine main control board.

IC Role / Device Role / Timing Role: High-side switch in half-bridge configuration driving transformer primary.

Use Value: TO-220SIS source isolation eliminates need for bootstrap capacitors or level-shifters in high-side gate drive.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP8NK80ZFP	800 V, 7.5 A, R_DS(ON) = 0.85 Ω, TO-220FP package (non-isolated source)	Lacks source isolation; requires external isolation for high-side use	Select when cost sensitivity outweighs isolation requirement and layout allows ground-referenced source.
IPP65R099C7	650 V, 35 A, R_DS(ON) = 0.099 Ω, TO-220 package, CoolMOS™ C7	Lower voltage rating; higher current but unsuitable for 800 V bus designs	Choose only for 400 V_DC bus systems where lower R_DS(ON) justifies derating V_DSS.

Compared with STP8NK80ZFP and IPP65R099C7, the TK7A80W,S4X uniquely combines 800 V rating, source isolation, and sub-0.8 Ω R_DS(ON) in a single TO-220SIS device - making it irreplaceable in isolated high-side or universal-input flyback designs where voltage margin and layout simplicity are critical.

Availability

TK7A80W,S4X is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, LED driver power stages, and telecom wall adapters requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for TK7A80W,S4X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with over 50 years of power MOSFET innovation.

The TK7A80W,S4X belongs to Toshiba's DTMOS™ IV super-junction MOSFET product line, engineered specifically for high-efficiency, high-reliability offline switching power supplies operating up to 800 V.

FAQ

What is the maximum continuous drain current rating for TK7A80W,S4X?

The TK7A80W,S4X has a DC drain current rating of 6.5 A at T_c = 25 °C. Derating is required above 25 °C case temperature per the R_th(ch-c) = 3.57 °C/W thermal resistance; at T_c = 100 °C, the usable I_D drops to approximately 4.2 A to maintain T_ch ≤ 150 °C. This rating assumes adequate PCB copper area or heatsink mounting.

Does TK7A80W,S4X have an integrated body diode, and what are its reverse recovery characteristics?

Yes, the TK7A80W,S4X includes a built-in fast-recovery body diode. Its reverse recovery time (t_rr) is 330 ns (typ.) at I_DR = 6.5 A and V_GS = 0 V, with reverse recovery charge (Q_rr) of 2.9 µC (typ.). These values are measured under standardized conditions and support moderate-frequency hard-switched topologies without requiring external snubbers.

Can TK7A80W,S4X be used in a high-side switch configuration without additional isolation components?

Yes, the TK7A80W,S4X can be used directly in high-side configurations due to its TO-220SIS package with electrically isolated source terminal (2000 V_RMS). This eliminates the need for optocouplers, pulse transformers, or isolated gate drivers typically required for high-side switching - simplifying design and improving reliability in half-bridge or active-clamp circuits.

What is the gate threshold voltage range for TK7A80W,S4X, and how does it affect drive circuit selection?

The TK7A80W,S4X has a gate threshold voltage (V_th) range of 3–4 V at V_DS = 10 V and I_D = 0.28 mA. This enhancement-mode characteristic allows direct interfacing with 5 V microcontrollers or PWM controllers without gate voltage boosting. However, full enhancement requires V_GS ≥ 10 V to achieve specified R_DS(ON), so gate drivers must deliver sufficient peak current to charge 13 nC total gate charge quickly.

Is TK7A80W,S4X compliant with RoHS and lead-free soldering requirements?

Yes, TK7A80W,S4X is RoHS-compliant and marked with [[G]]/RoHS notation per Toshiba's labeling convention. It supports lead-free reflow soldering profiles (JEDEC J-STD-020) and meets EU Directive 2011/65/EU. The device is manufactured without intentionally added lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls (PBB), or polybrominated diphenyl ethers (PBDE).

TK7A80W,S4X Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: DTMOSIV

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 6.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 950mOhm @ 3.3A, 10V

Vgs(th) (Max) @ Id:: 4V @ 280µA

Gate Charge (Qg) (Max) @ Vgs:: 13 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 700 pF @ 300 V

FET Feature:: -

Power Dissipation (Max):: 35W (Tc)

Operating Temperature:: 150°C

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220SIS

TK7A80W,S4X FAQ

1.How can I place an order for TK7A80W,S4X through Aetrix?

Please submit a Request for Quotation (RFQ) for TK7A80W,S4X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK7A80W,S4X reliable?

The price and inventory of TK7A80W,S4X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK7A80W,S4X is usually 5 days.

3.What payment methods are accepted for TK7A80W,S4X?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK7A80W,S4X transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK7A80W,S4X?

TK7A80W,S4X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK7A80W,S4X order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK7A80W,S4X?

For technical support, including TK7A80W,S4X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK7A80W,S4X requirements.

6.How does Aetrix verify that TK7A80W,S4X is sourced from the original manufacturer or authorized distributors?

All TK7A80W,S4X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK7A80W,S4X meets industry standards.

7.What is the process for return or replacement of TK7A80W,S4X?

All TK7A80W,S4X units undergo pre-shipment inspection (PSI). If there is an issue with TK7A80W,S4X, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK7A80W,S4X part is unused and in its original packaging.

Return procedure for TK7A80W,S4X:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…