Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK6A60W,S4VX

Name: TK6A60W,S4VX
Brand: Toshiba Semiconductor and Storage
SKU: TK6A60W,S4VX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: TK6A60W,S4VX

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: TK6A60W,S4VX.pdf

Description:: MOSFET N-CH 600V 6.2A TO220SIS

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:40

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

TK6A60W,S4VX from Toshiba is a silicon N-channel MOSFET using DTMOS™ Super Junction structure, designed for high-voltage switching in offline power supplies. It delivers 600 V V_DSS, 6.2 A continuous drain current, and low R_DS(ON) of 0.68 Ω (typ.) at V_GS = 10 V, enabling efficient operation in AC-DC adapters and industrial SMPS.

For engineers reviewing the TK6A60W,S4VX datasheet, TK6A60W,S4VX pinout, TK6A60W,S4VX application, or TK6A60W,S4VX equivalent, key selection criteria include avalanche ruggedness (E_AS = 84 mJ), gate threshold voltage range (2.7–3.7 V), thermal resistance (R_th(ch-c) = 4.17 °C/W), and TO-220SIS package compatibility with heatsink mounting.

Technical Context

This MOSFET employs Toshiba's DTMOS™ IV process to achieve low conduction loss while maintaining robust switching performance. Its enhancement-mode operation, combined with 30 V gate-source rating and 150 °C max channel temperature, supports reliable gate drive in isolated flyback and PFC stages.

The device features integrated body diode with 220 ns reverse recovery time and 1.6 µC Q_rr, optimized for hard-switched topologies. Dynamic parameters-including C_iss = 390 pF, C_oss = 12 pF, and Q_g = 12 nC-enable predictable turn-on/turn-off timing under 400 V bus conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - Withstands full rectified 400 VAC input with margin for surge and ringing
R_DS(ON)	0.68 Ω (typ.) - Minimizes conduction loss in 6.2 A continuous switching applications
I_D (DC)	6.2 A - Supports mid-power SMPS up to ~150 W with appropriate heatsinking
E_AS	84 mJ - Enables single-pulse avalanche capability without external snubbers
Q_g	12 nC - Allows fast, low-loss switching with standard 10 V gate drivers
R_th(ch-c)	4.17 °C/W - Permits direct heatsink mounting for thermal management in compact designs
V_th	2.7–3.7 V - Ensures clean logic-level turn-on with standard PWM controllers

Pinout & Package

TK6A60W,S4VX is housed in a TO-220SIS (JEITA SC-67) package with insulated tab, enabling direct heatsink mounting without electrical isolation hardware. The package weighs 1.7 g and features three terminals arranged in standard vertical lead configuration.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Control terminal accepting 10 V logic-level drive; sensitive to ESD (±30 V max)
2	Drain	High-side switch node connected to primary-side HV rail; electrically tied to metal tab
3	Source	Power return path and reference for gate drive; forms common node with driver IC ground

Key Features

Feature	Design Value
DTMOS™ Super Junction Structure	Enables 600 V rating with sub-0.7 Ω R_DS(ON), reducing conduction loss vs. planar MOSFETs
Low Gate Charge (Q_g = 12 nC)	Reduces driver power loss and enables higher-frequency operation up to 100 kHz
Robust Avalanche Rating (E_AS = 84 mJ)	Eliminates need for external clamping in inductive load switching and PFC circuits
Body Diode with Low Q_rr (1.6 µC)	Minimizes reverse recovery loss during hard commutation in flyback and LLC converters
Isolated Tab (V_ISO(RMS) = 2000 V)	Permits direct mechanical attachment to grounded heatsinks without insulating pads

Applications

AC-DC Power Adapters	Industrial SMPS
Use Scenario: 65–120 W universal-input offline adapter for consumer electronics. IC Role / Device Role / Timing Role: Primary-side high-voltage switch in quasi-resonant flyback topology. Use Value: Low R_DS(ON) and fast switching reduce no-load power and improve efficiency across load range.	Use Scenario: 150 W open-frame power supply for factory automation controllers. IC Role / Device Role / Timing Role: Main switch in active clamp forward converter operating at 65 kHz. Use Value: Avalanche ruggedness ensures reliability during line transients and short-circuit events.
PFC Boost Stages	LED Driver Power Supplies
Use Scenario: Continuous conduction mode (CCM) boost PFC stage in commercial lighting ballasts. IC Role / Device Role / Timing Role: High-side switch handling 6.2 A average current at 100 kHz switching frequency. Use Value: Low Q_g and optimized C_oss minimize switching loss and EMI generation.	Use Scenario: Isolated constant-current LED driver for streetlighting systems. IC Role / Device Role / Timing Role: Primary switch in dual-switch forward topology driving 48 V/3 A output. Use Value: TO-220SIS insulated tab simplifies thermal design while meeting reinforced isolation requirements.

AC-DC Power Adapters

Industrial SMPS

Use Scenario: 65–120 W universal-input offline adapter for consumer electronics.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch in quasi-resonant flyback topology.

Use Value: Low R_DS(ON) and fast switching reduce no-load power and improve efficiency across load range.

Use Scenario: 150 W open-frame power supply for factory automation controllers.

IC Role / Device Role / Timing Role: Main switch in active clamp forward converter operating at 65 kHz.

Use Value: Avalanche ruggedness ensures reliability during line transients and short-circuit events.

PFC Boost Stages

LED Driver Power Supplies

Use Scenario: Continuous conduction mode (CCM) boost PFC stage in commercial lighting ballasts.

IC Role / Device Role / Timing Role: High-side switch handling 6.2 A average current at 100 kHz switching frequency.

Use Value: Low Q_g and optimized C_oss minimize switching loss and EMI generation.

Use Scenario: Isolated constant-current LED driver for streetlighting systems.

IC Role / Device Role / Timing Role: Primary switch in dual-switch forward topology driving 48 V/3 A output.

Use Value: TO-220SIS insulated tab simplifies thermal design while meeting reinforced isolation requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP6NK60ZFP	600 V, 6 A, R_DS(ON) = 0.75 Ω (typ.), TO-220FP package (non-isolated tab)	Requires insulating pad for heatsink mounting; lower avalanche energy (E_AS = 40 mJ)	Preferred where cost sensitivity outweighs thermal/mechanical integration needs
IPP60R099C7	600 V, 6.2 A, R_DS(ON) = 0.099 Ω (typ.), TO-220 package, CoolMOS™ C7 technology	Lower R_DS(ON) but higher Q_g (35 nC); requires gate driver optimization	Selected when ultra-low conduction loss justifies added gate drive complexity

Compared with STP6NK60ZFP and IPP60R099C7, TK6A60W,S4VX offers balanced trade-offs: superior avalanche ruggedness over STMicro's part and simpler gate drive than Infineon's CoolMOS™, making it ideal for cost-constrained yet reliability-critical industrial SMPS.

Availability

TK6A60W,S4VX is available at Aetrix Electronics and suitable for AC-DC adapters, industrial SMPS, and PFC boost stages requiring stable component supply and long-term manufacturing continuity.

Supply support for TK6A60W,S4VX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on energy efficiency and reliability.

The TK6A60W,S4VX belongs to Toshiba's DTMOS™ IV high-voltage MOSFET product line, engineered specifically for high-efficiency, high-reliability switching power supplies in industrial and consumer applications.

FAQ

What is the maximum continuous drain current rating for TK6A60W,S4VX?

The TK6A60W,S4VX has a maximum continuous drain current (I_D) of 6.2 A at T_c = 25 °C. This rating assumes proper heatsinking and derating per the R_th(ch-c) = 4.17 °C/W specification. At elevated case temperatures, the current must be reduced linearly to maintain channel temperature ≤150 °C. The TK6A60W,S4VX datasheet provides the full derating curve in Figure 8.15.

Does TK6A60W,S4VX have an insulated tab, and what is its isolation rating?

Yes, TK6A60W,S4VX uses the TO-220SIS package with an electrically insulated metal tab. Its isolation voltage rating is 2000 V RMS, verified per safety standards. This allows direct mounting to a grounded heatsink without additional insulating hardware-reducing thermal resistance and assembly cost. The TK6A60W,S4VX insulation integrity is maintained under specified mounting torque (0.6 N·m).

What is the typical gate threshold voltage range for TK6A60W,S4VX?

The TK6A60W,S4VX exhibits a gate threshold voltage (V_th) range of 2.7 V to 3.7 V, measured at V_DS = 10 V and I_D = 0.31 mA. This range ensures reliable turn-on with standard 5 V or 10 V PWM controllers while avoiding false triggering from noise. The TK6A60W,S4VX V_th variation with temperature is characterized in Figure 8.11 of the official datasheet.

Can TK6A60W,S4VX be used in avalanche mode, and what is its rated single-pulse energy?

Yes, TK6A60W,S4VX is rated for single-pulse avalanche operation with E_AS = 84 mJ (T_ch = 25 °C). This capability supports robustness in inductive switching applications such as PFC and flyback converters during transient overloads or short circuits. The TK6A60W,S4VX avalanche performance is guaranteed per test condition V_DD = 90 V, L = 57.6 mH, R_G = 25 Ω, and I_AR = 1.6 A (Note 2).

What is the typical reverse recovery charge (Q_rr) of the body diode in TK6A60W,S4VX?

The TK6A60W,S4VX body diode has a typical reverse recovery charge (Q_rr) of 1.6 µC, measured at I_DR = 3.1 A, V_DD = 400 V, and −dI_DR/dt = 100 A/µs. This low Q_rr value reduces switching losses and EMI in hard-commutated topologies. The TK6A60W,S4VX Q_rr is documented in Section 6.4 of the datasheet and supported by Figure 8.8 and 8.9.

TK6A60W,S4VX Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: DTMOSIV

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 6.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 750mOhm @ 3.1A, 10V

Vgs(th) (Max) @ Id:: 3.7V @ 310µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 390 pF @ 300 V

FET Feature:: -

Power Dissipation (Max):: 30W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220SIS

TK6A60W,S4VX FAQ

1.How can I place an order for TK6A60W,S4VX through Aetrix?

Please submit a Request for Quotation (RFQ) for TK6A60W,S4VX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK6A60W,S4VX reliable?

The price and inventory of TK6A60W,S4VX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK6A60W,S4VX is usually 5 days.

3.What payment methods are accepted for TK6A60W,S4VX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK6A60W,S4VX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK6A60W,S4VX?

TK6A60W,S4VX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK6A60W,S4VX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK6A60W,S4VX?

For technical support, including TK6A60W,S4VX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK6A60W,S4VX requirements.

6.How does Aetrix verify that TK6A60W,S4VX is sourced from the original manufacturer or authorized distributors?

All TK6A60W,S4VX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK6A60W,S4VX meets industry standards.

7.What is the process for return or replacement of TK6A60W,S4VX?

All TK6A60W,S4VX units undergo pre-shipment inspection (PSI). If there is an issue with TK6A60W,S4VX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK6A60W,S4VX part is unused and in its original packaging.

Return procedure for TK6A60W,S4VX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…