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Vishay Siliconix IRF620STRRPBF

Part No.:
IRF620STRRPBF
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixIRF620STRRPBF.pdf
Description:
MOSFET N-CH 200V 5.2A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:800

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Product details

Overview

IRF620STRRPBF from Vishay Siliconix is a 200 V, 5.2 A N-channel enhancement-mode power MOSFET in D2PAK (TO-263) package, featuring 0.80 Ω RDS(on) at VGS = 10 V, 14 nC total gate charge, and repetitive avalanche rating-designed for high-efficiency DC-DC converters, motor control stages, and industrial power switching.

For engineers reviewing the IRF620STRRPBF datasheet, IRF620STRRPBF pinout, IRF620STRRPBF application, or IRF620STRRPBF equivalent, this part delivers verified surface-mount power switching with dynamic dv/dt immunity, fast 7.2 ns turn-on delay, and PCB-mount thermal dissipation up to 3.0 W-critical for compact, thermally constrained designs.

Technical Context

This third-generation power MOSFET uses planar V-groove silicon technology optimized for ruggedness and low conduction loss. Its 200 V VDS rating supports off-line and intermediate bus applications, while the 5.2 A continuous drain current at TC = 25 °C enables use in medium-power SMPS primary-side switches and half-bridge legs.

The device integrates a fast-recovery body diode (trr = 150–300 ns, Qrr = 0.91–1.8 μC) and exhibits stable RDS(on) temperature coefficient (+0.29 V/°C), enabling predictable thermal performance across -55 to +150 °C junction range without external current sensing.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 200 V - Supports 170 V AC rectified input or 100 V DC bus with 2× safety margin.
RDS(on) @ VGS = 10 V 0.80 Ω - Enables ≤2.0 W conduction loss at 5 A, suitable for <10 W output converters.
Qg 14 nC - Low gate drive energy reduces controller loading and improves efficiency above 100 kHz.
ID (continuous) 5.2 A @ TC = 25 °C - Requires ≥1"² FR-4 copper area for full-rated operation without heatsink.
EAS 110 mJ - Withstands unclamped inductive switching events in relay drivers or solenoid controls.
tr/tf 22 ns / 13 ns - Supports clean edge transitions in hard-switched topologies with minimal EMI.
RthJC 2.5 °C/W - Enables direct thermal coupling to heatsink via exposed drain pad for >30 W pulsed operation.

Pinout & Package

D2PAK (TO-263) surface-mount package with isolated gate, drain-connected thermal pad on underside, and 3-terminal layout optimized for high-current PCB routing and thermal management.

Pin/Terminal Circuit Role Design Meaning
G (Gate) Control electrode Accepts 10 V logic-level drive; 3.0 nC Qgs ensures fast turn-on with standard gate drivers.
D (Drain) High-side power terminal Internally connected to thermal pad; requires soldered copper pour for RthJC = 2.5 °C/W performance.
S (Source) Reference node / return path Low-inductance source loop critical-LS = 7.5 nH limits di/dt-induced shoot-through risk.

Key Features

Feature Design Value
Repetitive avalanche rated 5.0 mJ per pulse-enables robust operation in inductive load switching without snubbers.
Dynamic dv/dt immunity 5.0 V/ns-prevents false turn-on during high-slew-rate transients in bridge configurations.
Fast switching 7.2 ns td(on), 13 ns tf-reduces switching losses in 200–500 kHz SMPS designs.
Low gate charge 14 nC total with 7.9 nC Qgd-minimizes Miller plateau duration and improves controllability.
RoHS-compliant & halogen-free Lead (Pb)-free and halogen-free construction-meets IPC-1752A material declaration requirements.

Applications

AC-DC Adapter Primary Switch Brushed DC Motor Driver

Use Scenario: 12–24 V input, 5–10 W flyback converter operating at 65–132 kHz.

IC Role / Device Role / Timing Role: Main power switch handling primary-side energy transfer and ZVS transition timing.

Use Value: 0.80 Ω RDS(on) and 14 nC Qg reduce conduction and switching losses simultaneously, improving full-load efficiency by ≥1.2% vs. legacy 1.2 Ω alternatives.

Use Scenario: 24 V H-bridge driver for 5–8 A stall-current brushed motors in industrial actuators.

IC Role / Device Role / Timing Role: Low-side switch managing PWM-controlled current flow and freewheeling path via integrated body diode.

Use Value: 150–300 ns trr and 1.8 V VSD minimize reverse recovery loss and heat generation during direction reversal.

LED Constant-Current Driver Industrial Solenoid Control

Use Scenario: Buck-based constant-current driver for 12–24 V, 350–700 mA LED strings in signage and lighting.

IC Role / Device Role / Timing Role: Synchronous rectifier and current regulation element operating in continuous conduction mode.

Use Value: Stable RDS(on) over temperature (+0.29 V/°C coefficient) ensures consistent current regulation across ambient ranges.

Use Scenario: 24–48 V DC solenoid interface with 100–500 ms activation pulses in PLC I/O modules.

IC Role / Device Role / Timing Role: High-energy switching element absorbing inductive kickback via controlled avalanche.

Use Value: 110 mJ single-pulse EAS eliminates need for external TVS/clamp diodes in cost-sensitive designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STP20NM50FP 500 V VDS, 20 A ID, 0.23 Ω RDS(on), TO-220FP package Higher voltage/current rating but larger footprint and higher Qg (45 nC); requires heatsink for same power level Select when system requires >200 V isolation or >5 A continuous current with through-hole assembly.
IRFZ44NPBF 55 V VDS, 49 A ID, 0.028 Ω RDS(on), TO-220 package Lower voltage rating prevents use in 100+ V bus applications; superior RDS(on) only beneficial below 60 V Select only for low-voltage (<60 V), high-current motor drives where IRF620STRRPBF's 200 V rating is excessive.

Compared with STP20NM50FP and IRFZ44NPBF, IRF620STRRPBF offers optimal balance of voltage headroom, surface-mount compatibility, and thermal performance in 10–25 W industrial power stages-without requiring layout changes or additional thermal mass.

Availability

IRF620STRRPBF is available at Aetrix Electronics and suitable for AC-DC adapters, brushed DC motor drivers, LED constant-current drivers, and industrial solenoid control requiring stable component supply and long-term production continuity.

Supply support for IRF620STRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRF620STRRPBF belongs to Vishay's third-generation D2PAK power MOSFET family, engineered for ruggedized switching in space-constrained, thermally demanding applications such as offline SMPS and motor control.

FAQ

What is the maximum continuous drain current for IRF620STRRPBF at 100 °C case temperature?

The IRF620STRRPBF supports 3.3 A continuous drain current at TC = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package under sustained high-temperature operation-designers must ensure adequate PCB copper area or heatsinking to maintain safe junction temperatures below 150 °C. The IRF620STRRPBF's linear derating factor is 0.40 W/°C above 25 °C case temperature.

Does IRF620STRRPBF have a built-in body diode, and what are its key parameters?

Yes, the IRF620STRRPBF integrates a monolithic body diode with 5.2 A continuous forward current rating (IS) and 18 A pulsed capability (ISM). Key parameters include VSD = 1.8 V at IS = 5.2 A and TJ = 25 °C, reverse recovery time trr = 150–300 ns, and Qrr = 0.91–1.8 μC. These values are measured under standardized conditions (TJ = 25 °C, IF = 4.8 A, di/dt = 100 A/μs) and directly impact freewheeling efficiency in synchronous rectifiers and H-bridges.

Is IRF620STRRPBF RoHS-compliant and halogen-free?

Yes, IRF620STRRPBF is both RoHS-compliant and halogen-free, as confirmed in Vishay's official documentation (Document Number: 91028, Rev. E). It carries the "-GE3" suffix designation indicating lead (Pb)-free and halogen-free construction, meeting IPC-1752A material compliance requirements. No exemptions apply-the device contains no intentionally added brominated flame retardants or chlorine-based compounds.

What is the thermal resistance from junction to case (RthJC) for IRF620STRRPBF?

The IRF620STRRPBF has a maximum junction-to-case (drain) thermal resistance RthJC of 2.5 °C/W, measured from the silicon die to the exposed drain pad. This value assumes proper soldering of the thermal pad to ≥1"² of 2-oz copper on FR-4 PCB. Effective thermal design using this RthJC enables the IRF620STRRPBF to dissipate up to 50 W in heatsink-mounted configurations-critical for high-duty-cycle industrial switching applications.

Can IRF620STRRPBF be used in avalanche mode, and what are its rated energy limits?

Yes, IRF620STRRPBF is explicitly rated for repetitive avalanche operation with 5.0 mJ per pulse (EAR) and single-pulse avalanche energy of 110 mJ (EAS). These ratings are validated per test condition: VDD = 50 V, starting TJ = 25 °C, L = 6.1 mH, Rg = 25 Ω, IAS = 5.2 A. Use within these limits avoids permanent degradation-making the IRF620STRRPBF suitable for inductive load switching without external clamping components.

IRF620STRRPBF Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
200 V
Current - Continuous Drain (Id) @ 25°C:
5.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
800mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
14 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
260 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
3W (Ta), 50W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK

IRF620STRRPBF FAQ

1.How can I place an order for IRF620STRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF620STRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF620STRRPBF reliable?

The price and inventory of IRF620STRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF620STRRPBF is usually 5 days.

3.What payment methods are accepted for IRF620STRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF620STRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF620STRRPBF?

IRF620STRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF620STRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF620STRRPBF?

For technical support, including IRF620STRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF620STRRPBF requirements.

6.How does Aetrix verify that IRF620STRRPBF is sourced from the original manufacturer or authorized distributors?

All IRF620STRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF620STRRPBF meets industry standards.

7.What is the process for return or replacement of IRF620STRRPBF?

All IRF620STRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF620STRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF620STRRPBF part is unused and in its original packaging.

Return procedure for IRF620STRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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