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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK11A45D(STA4,Q,M)

Name: TK11A45D(STA4,Q,M)
Brand: Toshiba Semiconductor and Storage
SKU: TK11A45D(STA4,Q,M)
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK11A45D(STA4,Q,M)

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: TK11A45D(STA4,Q,M).pdf

Description:: MOSFET N-CH 450V 11A TO220SIS

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Product details

Overview

TK11A45D(STA4,Q,M) from Toshiba is a silicon N-channel power MOSFET in the π-MOSⅦ family, designed for high-voltage switching regulator applications. It features 450 V drain-source breakdown voltage (V_(BR)DSS), 11 A continuous drain current (I_D), and low on-resistance of 0.5 Ω (typ.) at V_GS = 10 V, enabling efficient DC-DC conversion in industrial SMPS.

For engineers reviewing the TK11A45D(STA4,Q,M) datasheet, TK11A45D(STA4,Q,M) pinout, TK11A45D(STA4,Q,M) application, or TK11A45D(STA4,Q,M) equivalent, key selection criteria include avalanche ruggedness (E_AS = 238 mJ), thermal resistance (R_th(ch-c) = 3.125 °C/W), and gate threshold voltage range (2.0–4.0 V) for reliable turn-on control under varying bias conditions.

Technical Context

This MOSFET employs a planar vertical structure optimized for high-voltage hard-switching operation. Its π-MOSⅦ process delivers enhanced forward transfer admittance (|Y_fs| = 3.2 S typ.) and low output capacitance (C_oss = 100 pF at V_DS = 25 V), supporting fast switching with reduced switching losses in flyback and forward converters.

The device integrates an intrinsic body diode with reverse recovery charge Q_rr = 14 μC and t_rr = 1350 ns, and is rated for repetitive avalanche energy (E_AR = 4.0 mJ), making it suitable for circuits requiring single-pulse robustness and limited repetitive stress handling without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	450 V - Withstands up to 450 V drain-source voltage before breakdown, enabling use in 380 V AC-input SMPS designs.
R_DS(ON)	0.5 Ω (typ.) at V_GS = 10 V - Minimizes conduction loss and junction heating during continuous 11 A operation.
\|Y_fs\|	3.2 S (typ.) at V_DS = 10 V, I_D = 5.5 A - High transconductance enables strong gate drive responsiveness and stable current regulation.
E_AS	238 mJ - Single-pulse avalanche energy rating supports safe operation during transient overvoltage events in unclamped inductive switching.
R_th(ch-c)	3.125 °C/W - Low channel-to-case thermal resistance allows effective heatsinking for 40 W dissipation at T_c = 25°C.
V_th	2.0–4.0 V at V_DS = 10 V, I_D = 1 mA - Ensures clean enhancement-mode turn-on with standard 3.3 V or 5 V logic-level gate drivers.
C_iss	1050 pF - Input capacitance determines gate drive strength requirements and influences switching speed vs. EMI trade-offs.

Pinout & Package

TK11A45D(STA4,Q,M) is housed in the SC-67 (Toshiba 2-10U1B) package - a through-hole, insulated-tab TO-220 variant with isolated drain tab for simplified heatsinking and creepage compliance in high-voltage designs.

Pin/Terminal	Circuit Role	Design Meaning
1: Gate	Control terminal	Receives gate drive voltage; requires ≤±30 V rating and low-impedance drive to minimize switching time (t_on = 60 ns, t_off = 75 ns).
2: Drain	High-side power terminal	Connected to primary-side high-voltage rail (up to 450 V); electrically isolated metal tab enables direct mounting to heatsink.
3: Source	Reference/return terminal	Serves as power ground reference for gate drive; carries full load current (11 A DC) and reverse recovery current of body diode.

Key Features

Feature	Design Value
π-MOSⅦ process technology	Delivers optimized R_DS(ON) × Q_g figure-of-merit for high-efficiency switching at 100 kHz–500 kHz frequencies.
Single-pulse avalanche rating	238 mJ enables operation in non-clamped inductive circuits (e.g., relay drivers, flyback transformers) without external protection.
Intrinsic body diode with low Q_rr	14 μC reverse recovery charge reduces diode-induced switching loss and EMI during freewheeling in buck-derived topologies.
Enhancement-mode threshold	2.0–4.0 V V_th ensures reliable turn-off at 0 V gate bias and compatibility with standard microcontroller GPIO outputs.
JEITA-registered SC-67 footprint	Standardized mechanical outline (15.0 × 13.0 mm) ensures drop-in replacement capability and board-level interchangeability across qualified suppliers.

Applications

Industrial Switch-Mode Power Supplies	AC-DC Adapters for Office Equipment
Use Scenario: Primary-side switch in 65–150 W offline flyback converters powering PLCs, HMIs, and industrial sensors. IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer from AC rectified bus to transformer primary. Use Value: 450 V V_(BR)DSS and 238 mJ E_AS tolerate line surges and transformer leakage spikes without failure.	Use Scenario: Main switching transistor in universal-input (90–264 V AC) adapters for printers, monitors, and network switches. IC Role / Device Role / Timing Role: Hard-switched power FET operating at 65–130 kHz with zero-voltage switching assist. Use Value: 0.5 Ω R_DS(ON) and 3.2 S \|Y_fs\| maintain >88% efficiency at full load while minimizing thermal derating.
LED Driver Power Stages	DC-DC Boost Converters for Telecom
Use Scenario: Switching element in isolated LED drivers delivering constant current to high-bay and street lighting arrays. IC Role / Device Role / Timing Role: Primary-side switch regulating power delivery via optocoupled feedback loop. Use Value: Low IDSS (≤10 μA at 450 V) prevents standby power leakage and meets Energy Star Level VI requirements.	Use Scenario: Boost switch in 48 V input telecom power modules generating ±12 V or 24 V intermediate rails. IC Role / Device Role / Timing Role: High-duty-cycle power switch handling 11 A continuous current with minimal conduction loss. Use Value: R_th(ch-c) = 3.125 °C/W supports compact heatsink design while maintaining T_ch ≤ 150°C at full load.

Industrial Switch-Mode Power Supplies

AC-DC Adapters for Office Equipment

Use Scenario: Primary-side switch in 65–150 W offline flyback converters powering PLCs, HMIs, and industrial sensors.

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer from AC rectified bus to transformer primary.

Use Value: 450 V V_(BR)DSS and 238 mJ E_AS tolerate line surges and transformer leakage spikes without failure.

Use Scenario: Main switching transistor in universal-input (90–264 V AC) adapters for printers, monitors, and network switches.

IC Role / Device Role / Timing Role: Hard-switched power FET operating at 65–130 kHz with zero-voltage switching assist.

Use Value: 0.5 Ω R_DS(ON) and 3.2 S |Y_fs| maintain >88% efficiency at full load while minimizing thermal derating.

LED Driver Power Stages

DC-DC Boost Converters for Telecom

Use Scenario: Switching element in isolated LED drivers delivering constant current to high-bay and street lighting arrays.

IC Role / Device Role / Timing Role: Primary-side switch regulating power delivery via optocoupled feedback loop.

Use Value: Low IDSS (≤10 μA at 450 V) prevents standby power leakage and meets Energy Star Level VI requirements.

Use Scenario: Boost switch in 48 V input telecom power modules generating ±12 V or 24 V intermediate rails.

IC Role / Device Role / Timing Role: High-duty-cycle power switch handling 11 A continuous current with minimal conduction loss.

Use Value: R_th(ch-c) = 3.125 °C/W supports compact heatsink design while maintaining T_ch ≤ 150°C at full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12NK45Z	450 V V_(BR)DSS, 12 A I_D, R_DS(ON) = 0.48 Ω (typ.), Zener-protected gate, higher C_iss (1400 pF)	Includes integrated gate protection; better suited for noisy industrial environments but requires stronger gate drive.	Select when gate robustness against ESD/transients is prioritized over minimal gate charge.
IRF840APBF	500 V V_(BR)DSS, 8 A I_D, R_DS(ON) = 0.85 Ω (typ.), no avalanche rating specified, TO-220AB package	Higher voltage margin but lower current and no guaranteed E_AS; not recommended for unclamped inductive loads.	Choose only for lower-current (<8 A), non-avalanche-critical applications where 500 V headroom is essential.

Compared with STP12NK45Z and IRF840APBF, TK11A45D(STA4,Q,M) offers the best balance of avalanche ruggedness, low R_DS(ON), and proven π-MOSⅦ reliability for 11 A switching regulator designs - especially where thermal management and single-pulse fault tolerance are critical.

Availability

TK11A45D(STA4,Q,M) is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, AC-DC adapters for office equipment, and LED driver power stages requiring stable component supply and long-term manufacturing continuity.

Supply support for TK11A45D(STA4,Q,M) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with decades of expertise in high-reliability discrete components.

The π-MOSⅦ series, including TK11A45D(STA4,Q,M), was engineered specifically for high-efficiency, high-voltage switching regulators in industrial and commercial power conversion - emphasizing avalanche capability, thermal stability, and consistent parametric performance across temperature.

FAQ

What is the maximum continuous drain current rating for TK11A45D(STA4,Q,M) at 25°C case temperature?

The TK11A45D(STA4,Q,M) is rated for 11 A continuous drain current (I_D) at T_c = 25°C, as specified in its Absolute Maximum Ratings table. This rating assumes proper heatsinking to maintain channel temperature ≤150°C and accounts for R_th(ch-c) = 3.125 °C/W. Derating is required above 25°C case temperature per the PD–T_c curve in the datasheet.

Does TK11A45D(STA4,Q,M) have a specified avalanche energy rating, and under what test conditions?

Yes, TK11A45D(STA4,Q,M) has a single-pulse avalanche energy rating of 238 mJ (E_AS). This value is measured under defined conditions: V_DD = 90 V, initial channel temperature T_ch = 25°C, inductance L = 3.27 mH, gate resistance R_G = 25 Ω, and avalanche current I_AR = 11 A. It is not rated for unlimited repetitive avalanche operation.

What is the gate threshold voltage range for TK11A45D(STA4,Q,M), and how does it affect drive circuit design?

The gate threshold voltage (V_th) for TK11A45D(STA4,Q,M) is specified as 2.0–4.0 V at V_DS = 10 V and I_D = 1 mA. This range confirms reliable enhancement-mode behavior and ensures full turn-on with standard 5 V logic-level gate drivers, while allowing safe turn-off with 0 V gate bias - critical for stable operation in isolated SMPS feedback loops.

Can TK11A45D(STA4,Q,M) be used in place of a MOSFET with a different package, such as TO-220AB?

TK11A45D(STA4,Q,M) uses the SC-67 (2-10U1B) package, which differs mechanically from standard TO-220AB: it features an insulated drain tab and distinct lead spacing. While both are through-hole, direct PCB footprint substitution is not possible without layout revision. Thermal and electrical performance must also be re-validated due to differences in R_th(ch-a) and mounting interface.

What is the typical reverse recovery charge (Q_rr) of the body diode in TK11A45D(STA4,Q,M), and why does it matter in converter design?

The typical reverse recovery charge (Q_rr) of the intrinsic body diode in TK11A45D(STA4,Q,M) is 14 μC, measured at I_DR = 11 A, V_GS = 0 V, and dI_DR/dt = 100 A/μs. This parameter directly impacts switching loss and EMI in topologies where the body diode conducts (e.g., synchronous rectification, freewheeling), making Q_rr a key factor in selecting snubber components and optimizing dead-time control.

TK11A45D(STA4,Q,M) Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: π-MOSVII

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 450 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 620mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1050 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 40W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220SIS

TK11A45D(STA4,Q,M) FAQ

1.How can I place an order for TK11A45D(STA4,Q,M) through Aetrix?

Please submit a Request for Quotation (RFQ) for TK11A45D(STA4,Q,M) on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK11A45D(STA4,Q,M) reliable?

The price and inventory of TK11A45D(STA4,Q,M) are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK11A45D(STA4,Q,M) is usually 5 days.

3.What payment methods are accepted for TK11A45D(STA4,Q,M)?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK11A45D(STA4,Q,M) transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK11A45D(STA4,Q,M)?

TK11A45D(STA4,Q,M) orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK11A45D(STA4,Q,M) order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK11A45D(STA4,Q,M)?

For technical support, including TK11A45D(STA4,Q,M) datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK11A45D(STA4,Q,M) requirements.

6.How does Aetrix verify that TK11A45D(STA4,Q,M) is sourced from the original manufacturer or authorized distributors?

All TK11A45D(STA4,Q,M) products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK11A45D(STA4,Q,M) meets industry standards.

7.What is the process for return or replacement of TK11A45D(STA4,Q,M)?

All TK11A45D(STA4,Q,M) units undergo pre-shipment inspection (PSI). If there is an issue with TK11A45D(STA4,Q,M), returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK11A45D(STA4,Q,M) part is unused and in its original packaging.

Return procedure for TK11A45D(STA4,Q,M):

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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