Toshiba Semiconductor and Storage TK7Q60W,S1VQ
- Part No.:
- TK7Q60W,S1VQ
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FETs, MOSFETs
- Package:
- TO-251-3 Stub Leads, IPAK
- Datasheet:
-
TK7Q60W,S1VQ.pdf
- Description:
- MOSFET N-CH 600V 7A IPAK
- Quantity:
- Payment:

- Shipping:

Inventory:75
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Product details
Overview
TK7Q60W,S1VQ from Toshiba is a silicon N-channel MOSFET using Super Junction DTMOS™ structure, designed as a high-voltage switching element in offline power supplies. It delivers 600 V VDSS, 7.0 A continuous drain current, and low RDS(ON) of 0.5 Ω (typ.) at VGS = 10 V, enabling efficient operation in AC-DC adapters and industrial SMPS.
For engineers reviewing the TK7Q60W,S1VQ datasheet, TK7Q60W,S1VQ pinout, TK7Q60W,S1VQ application, or TK7Q60W,S1VQ equivalent, key selection criteria include avalanche ruggedness (EAS = 92 mJ), diode reverse recovery performance (trr = 230 ns), thermal resistance (Rth(ch-c) = 2.09 °C/W), and gate charge (Qg = 15 nC) for optimized hard-switching efficiency.
Technical Context
This device implements Toshiba's DTMOS™ (Double-diffused Trench MOS) architecture to achieve low on-resistance and fast switching with controlled dv/dt ruggedness (≥25 V/ns). Its enhancement-mode threshold voltage (2.7–3.7 V) ensures reliable gate drive compatibility with standard 5 V and 15 V controllers.
The integrated body diode supports synchronous rectification and flyback operation, with characterized Qrr = 1.7 µC and Irr = 16 A, enabling predictable snubber design in quasi-resonant converters. Thermal design is anchored by a low channel-to-case resistance and IPAK package heatsink-integrated drain terminal.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 600 V - Supports universal-input (85–265 VAC) offline topologies without derating |
| RDS(ON) | 0.5 Ω (typ.) at VGS = 10 V - Reduces conduction loss in 7 A continuous applications |
| ID (DC) | 7.0 A - Enables compact designs for <100 W SMPS with minimal heatsinking |
| EAS | 92 mJ - Withstands single-pulse inductive energy in clamp circuits and PFC stages |
| trr | 230 ns - Limits diode recovery loss and EMI in high-frequency flyback converters |
| Qg | 15 nC - Balances switching speed and gate driver stress in 65–130 kHz operation |
| Rth(ch-c) | 2.09 °C/W - Allows direct mounting to PCB copper pour or heatsink for thermal management |
Pinout & Package
TK7Q60W,S1VQ is housed in an IPAK (TOSHIBA 2-7L1A) surface-mount package with integral heatsink tab on the drain terminal. The package weighs 0.337 g and features three external terminals: Gate (pin 1), Drain/Heatsink (pin 2), Source (pin 3).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1: Gate | Control input | Receives PWM signal; threshold voltage 2.7–3.7 V enables direct drive from UC384x or similar controllers |
| 2: Drain (Heatsink) | High-side power node | Exposed metal pad serves as both drain connection and primary thermal path to PCB/heatsink |
| 3: Source | Power return / reference | Common node for gate drive return and current sensing; connects to ground plane or shunt resistor |
Key Features
| Feature | Design Value |
|---|---|
| DTMOS™ Super Junction Structure | Enables 0.5 Ω RDS(ON) at 600 V while maintaining fast switching and low Coss (13 pF) |
| Low Qgd/Qg ratio | Qgd = 8.0 nC of total Qg = 15 nC - Improves Miller immunity and hard-switching robustness |
| Body diode with soft recovery | trr = 230 ns, Qrr = 1.7 µC - Reduces voltage overshoot and EMI during turn-off |
| Avalanche-rated operation | EAS = 92 mJ (Tch = 25 °C) - Supports unclamped inductive switching in PFC and resonant converters |
| ESD-sensitive handling | Class 1B per JESD22-A114 - Requires grounded workstations and anti-static packaging during assembly |
Applications
| AC-DC Power Adapters | Industrial SMPS |
|---|---|
Use Scenario: 65 W laptop adapter operating from 85–265 VAC input with active clamp flyback topology. IC Role / Device Role / Timing Role: Primary-side high-voltage switch controlling energy transfer into transformer; operates at 65–100 kHz with zero-voltage switching assistance. Use Value: Low RDS(ON) reduces conduction loss at full load; 92 mJ EAS withstands leakage inductance spikes during clamp reset. | Use Scenario: 100 W industrial control power supply with universal input and reinforced isolation requirements. IC Role / Device Role / Timing Role: Main switching transistor in discontinuous conduction mode (DCM) flyback converter; gate driven by TL494-based controller. Use Value: 600 V rating eliminates need for series stacking; IPAK package allows direct heatsink attachment for ambient temperatures up to 70 °C. |
| PFC Boost Converters | LED Driver Power Stages |
Use Scenario: 75 W active PFC front-end for commercial lighting ballast with THD <10%. IC Role / Device Role / Timing Role: Boost switch operating in continuous conduction mode (CCM); switched at 65 kHz with average current mode control. Use Value: Low Qg (15 nC) minimizes gate drive loss; soft-recovery body diode reduces boost diode stress during zero-current switching transitions. | Use Scenario: Constant-current LED driver for street lighting with 300–400 V DC bus and analog dimming interface. IC Role / Device Role / Timing Role: High-side buck switch regulating output current via peak-current-mode control loop. Use Value: 7.0 A ID supports >10 A LED strings with margin; Rth(ch-c) = 2.09 °C/W enables thermally stable operation on aluminum-core PCB. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP7NK60ZFP | 600 V, 7 A, RDS(ON) = 0.7 Ω (typ.), TO-220FP package, no specified EAS | Higher conduction loss; lacks guaranteed avalanche rating; through-hole mounting only | Prefer TK7Q60W,S1VQ where surface-mount layout, avalanche safety, or lower RDS(ON) is critical |
| FQP7N60C | 600 V, 7 A, RDS(ON) = 0.75 Ω (typ.), TO-220 package, EAS = 50 mJ (typ.) | Lower avalanche capability; larger footprint; higher thermal resistance (Rth(ch-a) = 62 °C/W vs. 125 °C/W for TK7Q60W,S1VQ) | TK7Q60W,S1VQ offers superior thermal performance and reliability in space-constrained, high-temperature environments |
Compared with STP7NK60ZFP and FQP7N60C, TK7Q60W,S1VQ provides lower on-resistance, guaranteed single-pulse avalanche energy, and surface-mount IPAK packaging with integrated heatsink - delivering higher power density and thermal margin in compact offline power designs.
Availability
TK7Q60W,S1VQ is available at Aetrix Electronics and suitable for AC-DC adapters, industrial SMPS, and LED driver power stages requiring stable component supply across extended production lifecycles.
Supply support for TK7Q60W,S1VQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions, with global manufacturing and quality systems certified to ISO 9001 and IATF 16949.
The TK7Q60W,S1VQ belongs to Toshiba's DTMOS™ IV family of high-voltage super junction MOSFETs, engineered for high-efficiency, high-reliability offline power conversion in consumer, industrial, and lighting applications.
FAQ
What is the maximum continuous drain current rating for TK7Q60W,S1VQ?
The TK7Q60W,S1VQ has a maximum continuous drain current (ID) of 7.0 A at Tc = 25 °C. This rating assumes proper heatsinking via the drain-connected metal tab. At higher case temperatures or without forced cooling, derating is required per the Safe Operating Area curve in the datasheet. For sustained 7 A operation, thermal design must maintain channel temperature ≤150 °C.
Does TK7Q60W,S1VQ have a guaranteed avalanche rating?
Yes, TK7Q60W,S1VQ is fully specified for single-pulse avalanche energy (EAS) at 92 mJ with Tch = 25 °C, VDD = 90 V, L = 49.9 mH, RG = 25 Ω, and IAR = 1.8 A. This rating is guaranteed per datasheet Rev. 2.0 and enables use in unclamped inductive switching applications such as PFC boost stages and flyback snubbers without external protection.
What is the gate threshold voltage range for TK7Q60W,S1VQ?
The gate threshold voltage (Vth) for TK7Q60W,S1VQ is specified from 2.7 V to 3.7 V at VDS = 10 V and ID = 0.35 mA. This enhancement-mode range ensures reliable turn-on with standard 5 V logic-level drivers and compatibility with UC384x, TL494, and other PWM controllers without level-shifting circuitry.
Can TK7Q60W,S1VQ be used in place of a TO-220 MOSFET in existing designs?
TK7Q60W,S1VQ uses an IPAK (2-7L1A) surface-mount package, not TO-220. While electrical specs align closely with many TO-220 600 V MOSFETs, direct replacement requires PCB layout revision due to different footprint, thermal pad placement, and soldering profile. Its drain-connected heatsink tab must be soldered to a large copper area for thermal performance equivalent to TO-220 mounting.
What is the typical reverse recovery time of the body diode in TK7Q60W,S1VQ?
The typical reverse recovery time (trr) of the integrated body diode in TK7Q60W,S1VQ is 230 ns under test conditions of IDR = 3.5 A, VGS = 0 V, and –dIDR/dt = 100 A/µs. This soft-recovery characteristic helps reduce switching noise and voltage overshoot in flyback and LLC resonant converters where the body diode conducts during dead-time intervals.
TK7Q60W,S1VQ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- DTMOSIV
- Package/Case:
- TO-251-3 Stub Leads, IPAK
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 600mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id:
- 3.7V @ 350µA
- Gate Charge (Qg) (Max) @ Vgs:
- 15 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 490 pF @ 300 V
- FET Feature:
- -
- Power Dissipation (Max):
- 60W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- IPAK
TK7Q60W,S1VQ FAQ
1.How can I place an order for TK7Q60W,S1VQ through Aetrix?
Please submit a Request for Quotation (RFQ) for TK7Q60W,S1VQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TK7Q60W,S1VQ reliable?
The price and inventory of TK7Q60W,S1VQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK7Q60W,S1VQ is usually 5 days.
3.What payment methods are accepted for TK7Q60W,S1VQ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK7Q60W,S1VQ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TK7Q60W,S1VQ?
TK7Q60W,S1VQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TK7Q60W,S1VQ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TK7Q60W,S1VQ?
For technical support, including TK7Q60W,S1VQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK7Q60W,S1VQ requirements.
6.How does Aetrix verify that TK7Q60W,S1VQ is sourced from the original manufacturer or authorized distributors?
All TK7Q60W,S1VQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK7Q60W,S1VQ meets industry standards.
7.What is the process for return or replacement of TK7Q60W,S1VQ?
All TK7Q60W,S1VQ units undergo pre-shipment inspection (PSI). If there is an issue with TK7Q60W,S1VQ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TK7Q60W,S1VQ part is unused and in its original packaging.
Return procedure for TK7Q60W,S1VQ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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