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Toshiba Semiconductor and Storage TK11A50D(STA4,Q,M)

Name: TK11A50D(STA4,Q,M)
Brand: Toshiba Semiconductor and Storage
SKU: TK11A50D(STA4,Q,M)
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK11A50D(STA4,Q,M)

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: TK11A50D(STA4,Q,M).pdf

Description:: MOSFET N-CH 500V 11A TO220SIS

Quantity:: RFQ Add To RFQ list

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Product details

Overview

TK11A50D(STA4,Q,M) from Toshiba is a silicon N-channel power MOSFET in the π-MOSⅦ family, designed for high-voltage switching regulator applications. It features 500 V drain-source breakdown voltage (V_(BR)DSS), 11 A continuous drain current (I_D), 0.45 Ω typical R_DS(ON) at V_GS = 10 V, 5.5 S typical forward transfer admittance, and 264 mJ single-pulse avalanche energy - enabling robust operation in offline SMPS and DC-DC converters.

For engineers reviewing the TK11A50D(STA4,Q,M) datasheet, TK11A50D(STA4,Q,M) pinout, TK11A50D(STA4,Q,M) application, or TK11A50D(STA4,Q,M) equivalent, key selection considerations include its 500 V rating, low R_DS(ON) at 10 V gate drive, thermal resistance of 2.78 °C/W (ch-to-case), SC-67 package with JEITA-compliant 2-10U1B footprint, and verified avalanche ruggedness for flyback and forward converter primary-side switching.

Technical Context

This N-channel enhancement-mode MOSFET operates with a gate threshold voltage of 2.0–4.0 V (V_DS = 10 V, I_D = 1 mA) and supports fast switching via low gate charges: Q_g = 24 nC, Q_gd = 8 nC, and Q_gs = 16 nC under V_DD ≈ 400 V conditions. Its 1200 pF input capacitance (C_iss) and 6 pF reverse transfer capacitance (C_rss) support stable high-frequency operation up to several hundred kHz.

The device integrates an intrinsic body diode with −1.7 V forward voltage (V_DSF) at I_DR = 11 A and 1300 ns reverse recovery time (t_rr), making it suitable for non-synchronous topologies where diode conduction is brief and controlled. Thermal design is anchored by R_th(ch-c) = 2.78 °C/W and channel temperature limit of 150 °C, requiring heatsinking for sustained >5 A loads.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	500 V - Withstands full mains-referenced DC bus in universal-input offline SMPS without derating.
R_DS(ON)	0.45 Ω (typ.) at V_GS = 10 V - Enables <1 W conduction loss at 11 A, reducing heatsink requirements.
I_D (continuous)	11 A - Supports up to ~250 W output in well-cooled flyback or forward converters.
E_AS	264 mJ - Absorbs inductive energy during hard-switching events, improving reliability in unclamped topologies.
C_iss/C_rss	1200 pF / 6 pF - Low C_rss minimizes Miller-induced turn-on risk; C_iss enables predictable gate drive sizing.
V_th	2.0–4.0 V - Compatible with standard 5 V or 10 V PWM controllers; avoids false turn-on from noise.
Q_g	24 nC - Requires ~0.24 mJ gate drive energy per switch cycle at 10 V, supporting efficient driver IC selection.

Pinout & Package

TK11A50D(STA4,Q,M) is housed in the SC-67 (JEITA) / 2-10U1B (Toshiba) through-hole package - a thermally optimized 3-pin outline with isolated tab, rated for 45 W dissipation at T_c = 25°C. The case is electrically connected to the drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
1: Gate	Control electrode	High-impedance input requiring <24 nC charge for full enhancement; sensitive to ESD (±30 V max).
2: Drain	High-voltage power terminal	Connected to heatsink tab; carries full switched DC bus voltage and load current; electrically tied to case.
3: Source	Power return/reference node	Serves as local ground reference for gate drive; carries same current as drain but at near-ground potential.

Key Features

Feature	Design Value
π-MOSⅦ process technology	Optimized cell layout delivering 0.45 Ω R_DS(ON) at 500 V - 20% lower on-resistance than prior π-MOS VI generation.
Single-pulse avalanche rating	264 mJ at V_DD = 90 V, I_AR = 11 A - Validated for repetitive stress in clampless flyback snubberless designs.
Low C_rss/C_iss ratio	6 pF / 1200 pF = 0.005 - Reduces voltage-dependent gate coupling, improving noise immunity during dV/dt transitions.
Body diode softness	t_rr = 1300 ns, Q_rr = 12 μC - Limits diode reverse recovery dv/dt and associated EMI in discontinuous conduction mode.
Thermal interface	R_th(ch-c) = 2.78 °C/W - Enables direct mounting to aluminum heatsinks without thermal pads, simplifying mechanical design.

Applications

Offline AC-DC Adapters	Industrial DC-DC Converters
Use Scenario: Universal-input (90–264 VAC) 65 W adapter using quasi-resonant flyback topology. IC Role / Device Role / Timing Role: Primary-side high-voltage switch handling 400 V DC bus, driven by QR controller with valley-switching timing. Use Value: 500 V rating eliminates need for series-connected MOSFETs; 0.45 Ω R_DS(ON) maintains >88% efficiency at full load without forced air cooling.	Use Scenario: 48 V input, 12 V/10 A isolated forward converter in factory automation power supply. IC Role / Device Role / Timing Role: Main power switch operating at 200 kHz with synchronous rectification on secondary side. Use Value: 264 mJ E_AS withstands transformer leakage inductance spikes during MOSFET turn-off, eliminating external RCD clamp.
LED Driver Power Stages	UPS Inverter Half-Bridge
Use Scenario: Constant-current 150 W LED driver for street lighting, using two-switch forward configuration. IC Role / Device Role / Timing Role: High-side switch controlling bulk DC link feeding resonant tank; gated at 100 kHz. Use Value: Low Q_gd/Q_g ratio (8/24 nC) ensures clean turn-off even with moderate gate resistor values, minimizing switching losses.	Use Scenario: 1 kVA online UPS with 350 V DC bus and 50 Hz SPWM inverter stage. IC Role / Device Role / Timing Role: Upper-leg switch in half-bridge driving LC filter into 230 VAC grid. Use Value: 150 °C max channel temperature and 2.78 °C/W R_th(ch-c) allow reliable operation under 100% duty-cycle surge conditions with passive heatsinking.

Offline AC-DC Adapters

Industrial DC-DC Converters

Use Scenario: Universal-input (90–264 VAC) 65 W adapter using quasi-resonant flyback topology.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch handling 400 V DC bus, driven by QR controller with valley-switching timing.

Use Value: 500 V rating eliminates need for series-connected MOSFETs; 0.45 Ω R_DS(ON) maintains >88% efficiency at full load without forced air cooling.

Use Scenario: 48 V input, 12 V/10 A isolated forward converter in factory automation power supply.

IC Role / Device Role / Timing Role: Main power switch operating at 200 kHz with synchronous rectification on secondary side.

Use Value: 264 mJ E_AS withstands transformer leakage inductance spikes during MOSFET turn-off, eliminating external RCD clamp.

LED Driver Power Stages

UPS Inverter Half-Bridge

Use Scenario: Constant-current 150 W LED driver for street lighting, using two-switch forward configuration.

IC Role / Device Role / Timing Role: High-side switch controlling bulk DC link feeding resonant tank; gated at 100 kHz.

Use Value: Low Q_gd/Q_g ratio (8/24 nC) ensures clean turn-off even with moderate gate resistor values, minimizing switching losses.

Use Scenario: 1 kVA online UPS with 350 V DC bus and 50 Hz SPWM inverter stage.

IC Role / Device Role / Timing Role: Upper-leg switch in half-bridge driving LC filter into 230 VAC grid.

Use Value: 150 °C max channel temperature and 2.78 °C/W R_th(ch-c) allow reliable operation under 100% duty-cycle surge conditions with passive heatsinking.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage switching MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12NK50ZFP	500 V, 12 A, R_DS(ON) = 0.52 Ω (typ.), Zener-protected gate, TO-220FP package	Higher R_DS(ON) increases conduction loss by ~15%; integrated gate Zener improves ESD robustness but adds capacitance	Preferred where gate protection is critical and board space allows larger TO-220FP footprint.
IXTP12N50L2	500 V, 12 A, R_DS(ON) = 0.48 Ω (typ.), logic-level gate (V_th = 1.5–2.5 V), TO-220AB	Lower V_th enables direct 3.3 V MCU drive but reduces noise margin; higher C_iss (1400 pF) demands stronger gate driver	Selected when low-voltage gate drive is mandatory and system-level noise filtering is implemented.

Compared with STP12NK50ZFP and IXTP12N50L2, TK11A50D(STA4,Q,M) offers the lowest R_DS(ON) among 500 V/11 A devices in SC-67, best thermal resistance for through-hole mounting, and validated avalanche performance - making it optimal for space-constrained, thermally demanding offline SMPS where gate drive voltage is ≥10 V.

Availability

TK11A50D(STA4,Q,M) is available at Aetrix Electronics and suitable for offline AC-DC adapters, industrial DC-DC converters, and LED driver power stages requiring stable component supply, long-lifecycle assurance, and traceable sourcing.

Supply support for TK11A50D(STA4,Q,M) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power ICs, and memory solutions, with global manufacturing and quality systems certified to ISO 9001 and IATF 16949.

The TK11A50D(STA4,Q,M) belongs to Toshiba's π-MOSⅦ high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching power supplies in consumer, industrial, and lighting applications.

FAQ

What is the maximum continuous drain current for TK11A50D(STA4,Q,M) at 25°C case temperature?

The TK11A50D(STA4,Q,M) supports 11 A continuous drain current (I_D) at T_c = 25°C, as specified in its Absolute Maximum Ratings table. This rating assumes proper heatsinking to maintain case temperature at or below 25°C; actual usable current decreases with rising case temperature per the PD–T_c derating curve, reaching ~5 A at T_c = 100°C.

Does TK11A50D(STA4,Q,M) have avalanche capability, and how is it rated?

Yes, TK11A50D(STA4,Q,M) is fully rated for single-pulse avalanche with E_AS = 264 mJ under defined test conditions (V_DD = 90 V, I_AR = 11 A, L = 3.7 mH, R_G = 25 Ω). It also supports repetitive avalanche energy of 4.5 mJ per pulse, limited by channel temperature rise - confirming suitability for unclamped inductive switching in flyback and forward converters.

What is the gate threshold voltage range for TK11A50D(STA4,Q,M), and how does it affect drive requirements?

The TK11A50D(STA4,Q,M) has a gate threshold voltage (V_th) range of 2.0–4.0 V at V_DS = 10 V and I_D = 1 mA. This ensures reliable turn-on with standard 5 V or 10 V gate drivers while maintaining sufficient noise margin against spurious turn-on. Full enhancement requires V_GS ≥ 10 V to achieve the specified 0.45 Ω R_DS(ON).

Is TK11A50D(STA4,Q,M) RoHS compliant, and what marking indicates this?

Yes, TK11A50D(STA4,Q,M) is RoHS compliant, indicated by the [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] marking on the device body per Toshiba's labeling convention. Compliance aligns with EU Directive 2011/65/EU; full environmental documentation is available through Toshiba's official sales channels.

What package type and pin configuration does TK11A50D(STA4,Q,M) use?

TK11A50D(STA4,Q,M) uses the SC-67 (JEITA) / 2-10U1B (Toshiba) through-hole package with three leads: Pin 1 = Gate, Pin 2 = Drain (connected to isolated metal tab), Pin 3 = Source. The package provides 2.78 °C/W channel-to-case thermal resistance and is optimized for manual or wave soldering in high-power applications.

TK11A50D(STA4,Q,M) Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: π-MOSVII

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 600mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 24 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 45W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220SIS

TK11A50D(STA4,Q,M) FAQ

1.How can I place an order for TK11A50D(STA4,Q,M) through Aetrix?

Please submit a Request for Quotation (RFQ) for TK11A50D(STA4,Q,M) on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK11A50D(STA4,Q,M) reliable?

The price and inventory of TK11A50D(STA4,Q,M) are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK11A50D(STA4,Q,M) is usually 5 days.

3.What payment methods are accepted for TK11A50D(STA4,Q,M)?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK11A50D(STA4,Q,M) transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK11A50D(STA4,Q,M)?

TK11A50D(STA4,Q,M) orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK11A50D(STA4,Q,M) order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK11A50D(STA4,Q,M)?

For technical support, including TK11A50D(STA4,Q,M) datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK11A50D(STA4,Q,M) requirements.

6.How does Aetrix verify that TK11A50D(STA4,Q,M) is sourced from the original manufacturer or authorized distributors?

All TK11A50D(STA4,Q,M) products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK11A50D(STA4,Q,M) meets industry standards.

7.What is the process for return or replacement of TK11A50D(STA4,Q,M)?

All TK11A50D(STA4,Q,M) units undergo pre-shipment inspection (PSI). If there is an issue with TK11A50D(STA4,Q,M), returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK11A50D(STA4,Q,M) part is unused and in its original packaging.

Return procedure for TK11A50D(STA4,Q,M):

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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