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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
IPU60R1K5CEAKMA2 MOSFET N-CH 600V 3.1A TO251-3 Infineon Technologies	924	RFQ	Datasheet	CoolMOS™ CE	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	3.1A (Tc)	10V	1.5Ohm @ 1.1A, 10V	3.5V @ 90µA	9.4 nC @ 10 V	±20V	200 pF @ 100 V	-	49W (Tc)	-40°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO251-3
XP3NA3R4MT MOSFET N-CH 30V 29.2A 73A PMPAK YAGEO XSEMI	1,000	RFQ	Datasheet	XP3NA3R4	8-PowerLDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	30 V	29.2A (Ta), 73A (Tc)	4.5V, 10V	3.4mOhm @ 19A, 10V	2.3V @ 250µA	36.8 nC @ 4.5 V	±20V	3360 pF @ 15 V	-	5W (Ta), 31.25W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PMPAK® 5 x 6
ZXMP10A17GTA MOSFET P-CH 100V 1.7A SOT223 Diodes Incorporated	1,008	RFQ	Datasheet	-	TO-261-4, TO-261AA	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	100 V	1.7A (Ta)	6V, 10V	350mOhm @ 1.4A, 10V	4V @ 250µA	10.7 nC @ 10 V	±20V	424 pF @ 50 V	-	2W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	SOT-223-3
FK4B01110LE SINGLE NCH MOSFET 12V, 2.3A 57MO Nuvoton Technology Corporation	1,000	RFQ	Datasheet	-	4-XFLGA	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	12 V	2.3A (Ta)	1.5V, 4.5V	64mOhm @ 1.5A, 4.5V	1V @ 118µA	2.55 nC @ 4.5 V	±8V	274 pF @ 10 V	-	340mW (Ta)	-40°C ~ 85°C (TA)	Automotive	AEC-Q101	Surface Mount	ALGA004-W-0606-RA01
TK4A50D(STA4,Q,M) MOSFET N-CH 500V 4A TO220SIS Toshiba Semiconductor and Storage	35	RFQ	Datasheet	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	4A (Ta)	10V	2Ohm @ 2A, 10V	4.4V @ 1mA	9 nC @ 10 V	±30V	380 pF @ 25 V	-	30W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
CSD17507Q5AT IC CLOCK BUFFER Texas Instruments	750	RFQ	Datasheet	NexFET™	8-PowerTDFN	Tape & Reel (TR)	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	30 V	13A (Ta), 65A (Tc)	4.5V, 10V	10.8mOhm @ 11A, 10V	2.1V @ 250µA	3.6 nC @ 4.5 V	±20V	530 pF @ 15 V	-	3W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-VSONP (5x6)
TPH3R003PL,LQ MOSFET N-CH 30V 88A 8SOP Toshiba Semiconductor and Storage	54	RFQ	Datasheet	U-MOSIX-H	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	30 V	88A (Tc)	4.5V, 10V	4.2mOhm @ 44A, 4.5V	2.1V @ 300µA	50 nC @ 10 V	±20V	3825 pF @ 15 V	-	90W (Tc)	175°C (TJ)	-	-	Surface Mount	8-SOP Advance (5x5)
XP202A0003PR-G MOSFET P-CH 30V 5A SOT89 Torex Semiconductor Ltd	100	RFQ	Datasheet	-	TO-243AA	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	30 V	5A (Tj)	4V, 10V	59mOhm @ 3A, 10V	2.6V @ 1mA	-	±20V	450 pF @ 10 V	-	1.5W	150°C	-	-	Surface Mount	SOT-89
XP202A0003MR-G MOSFET P-CH 30V 3A SOT23 Torex Semiconductor Ltd	71	RFQ	Datasheet	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	30 V	5A (Tj)	4V, 10V	45mOhm @ 1.5A, 10V	2.6V @ 1mA	10 nC @ 10 V	±20V	435 pF @ 10 V	-	1W	150°C	-	-	Surface Mount	SOT-23
TK8A25DA,S4X PB-F POWER MOSFET TRANSISTOR TO- Toshiba Semiconductor and Storage	32	RFQ	Datasheet	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	250 V	7.5A (Ta)	10V	500mOhm @ 3.8A, 10V	3.5V @ 1mA	16 nC @ 10 V	±20V	550 pF @ 100 V	-	30W (Tc)	150°C	-	-	Through Hole	TO-220SIS
FK4B01100LE SINGLE NCH MOSFET 12V, 3.4A, 27M Nuvoton Technology Corporation	1,000	RFQ	Datasheet	-	4-XFLGA, CSP	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	12 V	3.4A (Ta)	1.5V, 4.5V	30mOhm @ 1.5A, 4.5V	1V @ 236µA	5.8 nC @ 4.5 V	±8V	275 pF @ 10 V	-	360mW (Ta)	-40°C ~ 85°C (TA)	Automotive	AEC-Q101	Surface Mount	4-CSP (0.8x0.8)
TK46A08N1,S4X MOSFET N-CH 80V 46A TO220SIS Toshiba Semiconductor and Storage	50	RFQ	Datasheet	U-MOSVIII-H	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	80 V	46A (Tc)	10V	8.4mOhm @ 23A, 10V	4V @ 500µA	37 nC @ 10 V	±20V	2500 pF @ 40 V	-	35W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK5A45DA(STA4,Q,M) MOSFET N-CH 450V 4.5A TO220SIS Toshiba Semiconductor and Storage	28	RFQ	Datasheet	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	450 V	4.5A (Ta)	10V	1.75Ohm @ 2.3A, 10V	4.4V @ 1mA	9 nC @ 10 V	±30V	380 pF @ 25 V	-	30W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK5A80E,S4X PB-F POWER MOSFET TRANSISTOR TO- Toshiba Semiconductor and Storage	45	RFQ	Datasheet	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	5A (Ta)	10V	2.4Ohm @ 2.5A, 10V	4V @ 500µA	20 nC @ 10 V	±30V	950 pF @ 25 V	-	40W (Tc)	150°C	-	-	Through Hole	TO-220SIS
TK2A65D(STA4,Q,M) MOSFET N-CH 650V 2A TO220SIS Toshiba Semiconductor and Storage	99	RFQ	Datasheet	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	650 V	2A (Ta)	10V	3.26Ohm @ 1A, 10V	4.4V @ 1mA	9 nC @ 10 V	±30V	380 pF @ 25 V	-	30W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK35E08N1,S1X MOSFET N-CH 80V 55A TO220 Toshiba Semiconductor and Storage	41	RFQ	Datasheet	U-MOSVIII-H	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	80 V	55A (Tc)	10V	12.2mOhm @ 17.5A, 10V	4V @ 300µA	25 nC @ 10 V	±20V	1700 pF @ 40 V	-	72W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220
TK3A60DA(STA4,Q,M) MOSFET N-CH 600V 2.5A TO220SIS Toshiba Semiconductor and Storage	42	RFQ	Datasheet	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	2.5A (Ta)	10V	2.8Ohm @ 1.3A, 10V	4.4V @ 1mA	9 nC @ 10 V	±30V	380 pF @ 25 V	-	30W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS
TK4A80E,S4X PB-FPOWERMOSFETTRANSISTORTO-220S Toshiba Semiconductor and Storage	30	RFQ	Datasheet	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	4A (Ta)	10V	3.5Ohm @ 2A, 10V	4V @ 400µA	15 nC @ 10 V	±30V	650 pF @ 25 V	-	35W (Tc)	150°C	-	-	Through Hole	TO-220SIS
TK46E08N1,S1X MOSFET N-CH 80V 80A TO220 Toshiba Semiconductor and Storage	58	RFQ	Datasheet	U-MOSVIII-H	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	80 V	80A (Tc)	10V	8.4mOhm @ 23A, 10V	4V @ 500µA	37 nC @ 10 V	±20V	2500 pF @ 40 V	-	103W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220
TK5A50D(STA4,Q,M) MOSFET N-CH 500V 5A TO220SIS Toshiba Semiconductor and Storage	55	RFQ	Datasheet	π-MOSVII	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	500 V	5A (Ta)	10V	1.5Ohm @ 2.5A, 10V	4.4V @ 1mA	11 nC @ 10 V	±30V	490 pF @ 25 V	-	35W (Tc)	150°C (TJ)	-	-	Through Hole	TO-220SIS

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