Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK35E08N1,S1X

Name: TK35E08N1,S1X
Brand: Toshiba Semiconductor and Storage
SKU: TK35E08N1,S1X
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: TK35E08N1,S1X

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: TK35E08N1,S1X.pdf

Description:: MOSFET N-CH 80V 55A TO220

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:41

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

TK35E08N1,S1X from Toshiba is a silicon N-channel power MOSFET in the U-MOSⅧ-H series, designed for high-efficiency switching in DC-DC converters and motor drives. It delivers 80 V V_DSS, 55 A continuous drain current (T_C = 25 °C), and ultra-low R_DS(ON) of 10.0 mΩ (typ.) at V_GS = 10 V, enabling reduced conduction loss in high-current 48 V industrial power supplies.

For engineers reviewing the TK35E08N1,S1X datasheet, TK35E08N1,S1X pinout, TK35E08N1,S1X application, or TK35E08N1,S1X equivalent, key selection criteria include its TO-220 package thermal performance (R_th(ch-c) = 1.72 °C/W), avalanche ruggedness (E_AS = 38 mJ), and gate charge profile (Q_g = 25 nC) for optimized hard-switching efficiency.

Technical Context

This MOSFET employs Toshiba's U-MOSⅧ-H trench-gate process to achieve low on-resistance while maintaining robust safe operating area (SOA) and single-pulse avalanche capability. Its enhancement-mode threshold voltage (2.0–4.0 V) ensures reliable turn-on with standard 5 V or 10 V gate drivers.

The device integrates a fast-recovery body diode (t_rr = 52 ns, Q_rr = 82 nC) and exhibits low dynamic capacitances (C_iss = 1700 pF, C_rss = 18 pF), supporting high-frequency operation up to several hundred kHz in synchronous buck topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	80 V - Maximum blocking voltage for use in 48 V bus systems with margin against transients
R_DS(ON)	10.0 mΩ (typ.) at V_GS = 10 V - Enables <1.8 W conduction loss at 17.5 A DC, reducing heatsink requirements
I_D (DC)	55 A at T_C = 25 °C - Supports high-current output stages in server VRMs and telecom rectifiers
E_AS	38 mJ - Withstands single-pulse inductive energy without failure, critical for relay/snubberless designs
Q_g	25 nC - Low total gate charge enables efficient 100–300 kHz switching with moderate gate driver strength
t_rr	52 ns - Fast body diode recovery minimizes shoot-through risk and switching loss in synchronous rectification
R_th(ch-c)	1.72 °C/W - Allows direct mounting to heatsink for >50 W continuous power dissipation in compact enclosures

Pinout & Package

TK35E08N1,S1X is housed in a through-hole TO-220 package (TOSHIBA designation: 2-10X1A), with the drain electrically connected to the metal tab for thermal and electrical integration with heatsinks.

Pin/Terminal	Circuit Role	Design Meaning
1 (Lead)	Gate	High-impedance control input requiring <25 nC charge for full enhancement; sensitive to ESD
2 (Tab)	Drain	Main high-side switching node; electrically tied to heatsink-requires isolation if heatsink is grounded
3 (Lead)	Source	Power return path and gate reference; forms common node with driver ground in low-side configurations

Key Features

Feature	Design Value
U-MOSⅧ-H trench structure	Delivers 10 mΩ R_DS(ON) in TO-220 without die size penalty, improving power density vs. planar predecessors
Guaranteed avalanche rating	38 mJ single-pulse energy handling enables elimination of external snubbers in inductive load switching
Low Crss (18 pF)	Minimizes Miller-induced false turn-on during high dV/dt commutation, enhancing noise immunity
V_th range (2.0–4.0 V)	Ensures clean logic-level compatibility with 3.3 V/5 V microcontrollers while preventing accidental turn-on
Body diode Q_rr = 82 nC	Reduces reverse recovery loss in synchronous rectifier mode, improving efficiency over discrete diode solutions

Applications

Industrial Motor Drives	Telecom DC-DC Converters
Use Scenario: Half-bridge inverter stage for 200–500 W BLDC fans and pumps in HVAC systems. IC Role / Device Role / Timing Role: High-side and low-side switching element controlling phase current with 20–100 kHz PWM. Use Value: 10 mΩ R_DS(ON) reduces I²R losses by >30% vs. legacy 20 mΩ MOSFETs, lowering thermal stress on PCB-mounted heatsinks.	Use Scenario: Primary-side switch in isolated 48 V-to-12 V forward converter for base station power modules. IC Role / Device Role / Timing Role: Main power switch operating at 250 kHz with synchronous rectification on secondary side. Use Value: 52 ns t_rr and low Q_rr suppress body diode conduction loss, increasing full-load efficiency from 92.1% to 93.4%.
Server Voltage Regulators	Automotive Auxiliary Power Supplies
Use Scenario: High-current phase leg in multiphase buck VRM supplying CPU core voltage (0.8–1.2 V @ up to 200 A). IC Role / Device Role / Timing Role: Synchronous rectifier in interleaved 3-phase topology, driven by dedicated gate controller. Use Value: 1.72 °C/W R_th(ch-c) allows direct heatsink mounting, sustaining 55 A DC with <45 °C temperature rise at 25 °C ambient.	Use Scenario: 24 V-to-5 V DC-DC supply for infotainment ECUs in commercial vehicles. IC Role / Device Role / Timing Role: Primary switch in non-isolated buck regulator meeting ISO 7637-2 pulse 5a surge immunity. Use Value: 80 V V_DSS provides 2× margin over 24 V nominal bus, surviving load-dump transients up to 60 V without clamping.

Industrial Motor Drives

Telecom DC-DC Converters

Use Scenario: Half-bridge inverter stage for 200–500 W BLDC fans and pumps in HVAC systems.

IC Role / Device Role / Timing Role: High-side and low-side switching element controlling phase current with 20–100 kHz PWM.

Use Value: 10 mΩ R_DS(ON) reduces I²R losses by >30% vs. legacy 20 mΩ MOSFETs, lowering thermal stress on PCB-mounted heatsinks.

Use Scenario: Primary-side switch in isolated 48 V-to-12 V forward converter for base station power modules.

IC Role / Device Role / Timing Role: Main power switch operating at 250 kHz with synchronous rectification on secondary side.

Use Value: 52 ns t_rr and low Q_rr suppress body diode conduction loss, increasing full-load efficiency from 92.1% to 93.4%.

Server Voltage Regulators

Automotive Auxiliary Power Supplies

Use Scenario: High-current phase leg in multiphase buck VRM supplying CPU core voltage (0.8–1.2 V @ up to 200 A).

IC Role / Device Role / Timing Role: Synchronous rectifier in interleaved 3-phase topology, driven by dedicated gate controller.

Use Value: 1.72 °C/W R_th(ch-c) allows direct heatsink mounting, sustaining 55 A DC with <45 °C temperature rise at 25 °C ambient.

Use Scenario: 24 V-to-5 V DC-DC supply for infotainment ECUs in commercial vehicles.

IC Role / Device Role / Timing Role: Primary switch in non-isolated buck regulator meeting ISO 7637-2 pulse 5a surge immunity.

Use Value: 80 V V_DSS provides 2× margin over 24 V nominal bus, surviving load-dump transients up to 60 V without clamping.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP55NF06L	60 V V_DSS, 55 A, R_DS(ON) = 14 mΩ (V_GS = 10 V); TO-220 package	Limited to ≤48 V systems; higher conduction loss increases thermal design burden	Acceptable where bus voltage stays below 40 V and efficiency targets are relaxed
IRFZ44NPBF	55 V V_DSS, 49 A, R_DS(ON) = 28 mΩ (V_GS = 10 V); TO-220	Lower voltage rating and higher R_DS(ON) restrict use to ≤24 V, <30 A applications	Suitable only for cost-sensitive, low-power auxiliary rails-not for primary switching in 48 V systems

Compared with STP55NF06L and IRFZ44NPBF, TK35E08N1,S1X offers superior voltage margin (80 V), lower on-resistance (10 mΩ), and higher avalanche energy (38 mJ), making it the preferred choice for industrial 48 V power conversion where reliability under transient stress is critical.

Availability

TK35E08N1,S1X is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC-DC converters, and server voltage regulators requiring stable component supply across multi-year production cycles.

Supply support for TK35E08N1,S1X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions, with decades of expertise in silicon power MOSFET innovation.

The TK35E08N1,S1X belongs to Toshiba's U-MOSⅧ-H power MOSFET family, engineered for high-efficiency, high-reliability switching in industrial and telecom power supplies where low R_DS(ON), rugged avalanche performance, and thermal manageability are essential.

FAQ

What is the maximum continuous drain current rating for TK35E08N1,S1X?

The TK35E08N1,S1X has a maximum continuous drain current (I_D) of 55 A when case temperature (T_C) is maintained at 25 °C. At higher case temperatures, derating applies per the SOA curve; for example, at T_C = 100 °C, the usable I_D drops to approximately 28 A. This rating assumes proper heatsinking with R_th(ch-c) ≤ 1.72 °C/W.

Does TK35E08N1,S1X have avalanche capability, and how is it specified?

Yes, TK35E08N1,S1X is rated for single-pulse avalanche energy (E_AS) of 38 mJ under defined test conditions (V_DD = 64 V, T_ch = 25 °C, L = 24.1 µH, I_AR = 35 A). This specification confirms its ability to absorb inductive energy without failure during switching events, eliminating need for external snubbers in many relay or solenoid drive circuits.

What is the gate threshold voltage range for TK35E08N1,S1X, and why does it matter?

The gate threshold voltage (V_th) for TK35E08N1,S1X is specified from 2.0 V to 4.0 V at V_DS = 10 V and I_D = 0.3 mA. This range ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers while preventing unintended conduction due to noise or leakage-critical for stable operation in noisy industrial environments.

Can TK35E08N1,S1X be used in synchronous rectification applications?

Yes, TK35E08N1,S1X supports synchronous rectification thanks to its integrated body diode with characterized reverse recovery parameters: t_rr = 52 ns and Q_rr = 82 nC (typ.). These values enable predictable timing control and low recovery loss when the MOSFET is actively driven during freewheeling, improving efficiency over Schottky diode solutions in buck and LLC topologies.

What thermal resistance values apply to TK35E08N1,S1X in TO-220 package?

TK35E08N1,S1X specifies R_th(ch-c) = 1.72 °C/W (max) from channel to case, and R_th(ch-a) = 83.3 °C/W (max) from channel to ambient (unmounted). When mounted on a heatsink with thermal interface material, effective R_th(ch-a) can reach ~4.16 °C/W, enabling >50 W continuous power dissipation with modest heatsink size.

TK35E08N1,S1X Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: U-MOSVIII-H

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 55A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 12.2mOhm @ 17.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 300µA

Gate Charge (Qg) (Max) @ Vgs:: 25 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1700 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 72W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

TK35E08N1,S1X FAQ

1.How can I place an order for TK35E08N1,S1X through Aetrix?

Please submit a Request for Quotation (RFQ) for TK35E08N1,S1X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK35E08N1,S1X reliable?

The price and inventory of TK35E08N1,S1X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK35E08N1,S1X is usually 5 days.

3.What payment methods are accepted for TK35E08N1,S1X?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK35E08N1,S1X transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK35E08N1,S1X?

TK35E08N1,S1X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK35E08N1,S1X order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK35E08N1,S1X?

For technical support, including TK35E08N1,S1X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK35E08N1,S1X requirements.

6.How does Aetrix verify that TK35E08N1,S1X is sourced from the original manufacturer or authorized distributors?

All TK35E08N1,S1X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK35E08N1,S1X meets industry standards.

7.What is the process for return or replacement of TK35E08N1,S1X?

All TK35E08N1,S1X units undergo pre-shipment inspection (PSI). If there is an issue with TK35E08N1,S1X, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK35E08N1,S1X part is unused and in its original packaging.

Return procedure for TK35E08N1,S1X:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…