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Toshiba Semiconductor and Storage TK46A08N1,S4X
- Part No.:
- TK46A08N1,S4X
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack
- Datasheet:
-
TK46A08N1,S4X.pdf
- Description:
- MOSFET N-CH 80V 46A TO220SIS
- Quantity:
- Payment:
- Shipping:
Inventory:50
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Product details
Overview
TK46A08N1,S4X from Toshiba is an N-channel silicon power MOSFET in the U-MOSⅧ-H series, designed for high-efficiency switching in DC-DC converters and motor drives. It delivers 80 V VDSS, 46 A continuous drain current (TC = 25 °C), and ultra-low RDS(ON) of 6.9 mΩ (typ.) at VGS = 10 V - enabling reduced conduction loss in high-current 48 V industrial power supplies.
For engineers reviewing the TK46A08N1,S4X datasheet, TK46A08N1,S4X pinout, TK46A08N1,S4X application, or TK46A08N1,S4X equivalent, key selection criteria include avalanche ruggedness (EAS = 59 mJ), fast switching (ton = 30 ns, toff = 51 ns), gate charge (Qg = 37 nC), thermal resistance (Rth(ch-c) = 3.57 °C/W), and TO-220SIS package compatibility with heatsink mounting.
Technical Context
This MOSFET employs Toshiba's U-MOSⅧ-H trench-gate process to achieve low on-resistance while maintaining robust avalanche capability and fast dynamic performance. Its enhancement-mode operation (Vth = 2.0–4.0 V) ensures reliable gate drive compatibility with standard 10 V logic-level controllers.
The device integrates a built-in body diode with reverse recovery time (trr = 59 ns) and Qrr = 97 nC, supporting synchronous rectification and hard-switched topologies. Thermal design is enabled by its channel-to-case thermal resistance of 3.57 °C/W and 150 °C maximum channel temperature rating.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 80 V - supports 48 V bus systems with 25 % voltage margin for transients and ripple. |
| RDS(ON) (typ.) | 6.9 mΩ at VGS = 10 V - reduces I²R conduction loss to ≤14.8 W at 60 A, easing thermal management. |
| ID (DC) | 46 A at TC = 25 °C - enables high-current output stages without parallel devices in compact designs. |
| EAS | 59 mJ - withstands single-pulse inductive energy in motor drive or converter freewheeling without failure. |
| ton/toff | 30 ns / 51 ns - supports >500 kHz switching frequencies with minimal dead-time penalty. |
| Qg | 37 nC - determines gate driver power requirement (~3.7 mW per MHz at 10 V drive). |
| Ciss | 2500 pF - influences Miller effect and gate drive stability in high-dV/dt environments. |
Pinout & Package
TK46A08N1,S4X is housed in a TO-220SIS (JEITA SC-67, Toshiba 2-10U1S) package with isolated tab - enabling direct heatsink mounting without insulating hardware. The package weighs 1.7 g and features a 3-pin through-hole configuration optimized for high-power dissipation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate (G) | Controls channel conduction; requires ≤±20 V gate-source voltage and low-impedance drive to minimize switching loss. |
| 2 | Drain (D) | High-side connection point; electrically tied to metal tab - must be isolated from heatsink unless using isolated mounting. |
| 3 | Source (S) | Reference node for gate drive and current sensing; common return path for load current and body diode conduction. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(ON) | 6.9 mΩ typ. at VGS = 10 V - directly lowers conduction loss and improves full-load efficiency in buck regulators. |
| Avalanche-rated | Single-pulse EAS = 59 mJ - eliminates need for external snubbers in inductive switching applications like motor control. |
| Fast body diode | trr = 59 ns, Qrr = 97 nC - minimizes reverse recovery loss and EMI in synchronous rectifier and LLC resonant designs. |
| Thermally optimized | Rth(ch-c) = 3.57 °C/W - allows ≥10 W higher power dissipation than comparable TO-220AB parts under identical heatsinking. |
| Enhancement-mode threshold | Vth = 2.0–4.0 V - ensures clean turn-on with standard 3.3 V/5 V microcontroller GPIO or dedicated gate drivers. |
Applications
| Industrial DC-DC Converters | Brushless DC Motor Drives |
|---|---|
Use Scenario: 48 V input, 12 V/30 A output synchronous buck converter in programmable logic controller (PLC) power modules. IC Role / Device Role / Timing Role: High-side main switch handling continuous 46 A current with <100 ns switching transitions. Use Value: 6.9 mΩ RDS(ON) limits conduction loss to 6.4 W at full load, reducing heatsink size by 35 % versus 12 mΩ alternatives. |
Use Scenario: Half-bridge leg in 750 W BLDC inverter for HVAC fan control, operating at 20 kHz PWM. IC Role / Device Role / Timing Role: Low-side switching element managing phase current commutation with integrated body diode freewheeling. Use Value: 59 ns trr and 97 nC Qrr cut diode recovery loss by 42 % compared to standard 100 ns/150 nC MOSFETs, lowering junction temperature rise. |
| Server VRM Power Stages | Telecom Rectifier Modules |
Use Scenario: Multiphase buck stage in 12 V server VRM delivering up to 120 A per phase to CPU/GPU rails. IC Role / Device Role / Timing Role: Synchronous rectifier switch operating in continuous conduction mode with 500 kHz switching frequency. Use Value: 37 nC total gate charge enables efficient drive with low-power gate drivers (e.g., TI UCC27531), reducing driver supply loading. |
Use Scenario: Primary-side switch in 48 V telecom rectifier with active clamp forward topology, handling 80 V transient surges. IC Role / Device Role / Timing Role: Main power switch rated for 80 V VDSS with guaranteed avalanche immunity during line transients. Use Value: 59 mJ EAS rating ensures no failure during 64 V, 46 A single-pulse avalanche events defined per JEDEC JESD24-11. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP46NF80 | Higher RDS(ON) (10.5 mΩ), larger Ciss (3200 pF), same TO-220 package but non-isolated tab. | Requires insulating pad for heatsink mounting; less suitable for high-density layouts needing tab isolation. | Prefer TK46A08N1,S4X where thermal interface simplicity and lower conduction loss are critical. |
| IRFP4668PBF | Lower VDSS (75 V), higher Qg (54 nC), TO-247 package - larger footprint and higher gate drive power demand. | Not drop-in compatible due to different pinout and mounting hole pattern; needs PCB redesign. | Choose TK46A08N1,S4X when board space, thermal performance, and gate drive efficiency outweigh raw voltage margin needs. |
Compared with STP46NF80 and IRFP4668PBF, TK46A08N1,S4X offers superior conduction efficiency (6.9 mΩ vs. ≥10 mΩ), lower gate charge (37 nC vs. ≥54 nC), and TO-220SIS isolation - making it optimal for compact, thermally constrained 48 V industrial and telecom power stages where layout density and heatsink integration are prioritized.
Availability
TK46A08N1,S4X is available at Aetrix Electronics and suitable for industrial DC-DC converters, brushless DC motor drives, and telecom rectifier modules requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for TK46A08N1,S4X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation is a global semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions, with decades of expertise in silicon power MOSFET innovation.
The TK46A08N1,S4X belongs to Toshiba's U-MOSⅧ-H power MOSFET family, engineered specifically for high-efficiency, high-reliability switching in industrial and telecom power conversion systems demanding low RDS(ON), fast switching, and rugged avalanche performance.
FAQ
What is the maximum continuous drain current rating for TK46A08N1,S4X?
The TK46A08N1,S4X is rated for 46 A continuous drain current (ID) at case temperature TC = 25 °C. At elevated case temperatures, derating applies per the Safe Operating Area curve (Fig. 8.13); for example, at TC = 100 °C, the usable ID drops to approximately 28 A. This rating assumes proper heatsinking and adherence to the 3.57 °C/W channel-to-case thermal resistance.
Does TK46A08N1,S4X have an isolated drain tab?
Yes, TK46A08N1,S4X uses the TO-220SIS package with an electrically isolated drain tab - meaning the metal tab (Pin 2) is not internally connected to the drain terminal. This allows direct mounting to a grounded heatsink without requiring insulating pads or hardware, simplifying thermal design and improving reliability in high-voltage industrial systems.
What is the gate threshold voltage range for TK46A08N1,S4X?
The TK46A08N1,S4X has a gate threshold voltage (Vth) range of 2.0 V to 4.0 V, specified at VDS = 10 V and ID = 0.5 mA. This enhancement-mode characteristic ensures predictable turn-on behavior with standard 3.3 V or 5 V logic-level gate drivers, while providing noise immunity against spurious turn-on in noisy industrial environments.
Is TK46A08N1,S4X suitable for avalanche operation?
Yes, TK46A08N1,S4X is fully rated for single-pulse avalanche operation with EAS = 59 mJ (at VDD = 64 V, Tch = 25 °C, L = 21.7 µH, IAR = 46 A). This ruggedness enables reliable use in inductive switching applications such as motor drives and flyback converters without external clamping components - provided avalanche energy remains within the specified limit and channel temperature stays ≤150 °C.
What are the key thermal parameters of TK46A08N1,S4X?
TK46A08N1,S4X features Rth(ch-c) = 3.57 °C/W (max) and Rth(ch-a) = 62.5 °C/W (max). The low channel-to-case resistance enables efficient heat transfer to an external heatsink, supporting up to ~35 W power dissipation with modest heatsinking. The 150 °C maximum channel temperature and -55 to +150 °C storage temperature range confirm suitability for extended industrial ambient conditions.
TK46A08N1,S4X Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- U-MOSVIII-H
- Package/Case:
- TO-220-3 Full Pack
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 46A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 8.4mOhm @ 23A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs:
- 37 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2500 pF @ 40 V
- FET Feature:
- -
- Power Dissipation (Max):
- 35W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220SIS
TK46A08N1,S4X FAQ
1.How can I place an order for TK46A08N1,S4X through Aetrix?
Please submit a Request for Quotation (RFQ) for TK46A08N1,S4X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TK46A08N1,S4X reliable?
The price and inventory of TK46A08N1,S4X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK46A08N1,S4X is usually 5 days.
3.What payment methods are accepted for TK46A08N1,S4X?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK46A08N1,S4X transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TK46A08N1,S4X?
TK46A08N1,S4X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TK46A08N1,S4X order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TK46A08N1,S4X?
For technical support, including TK46A08N1,S4X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK46A08N1,S4X requirements.
6.How does Aetrix verify that TK46A08N1,S4X is sourced from the original manufacturer or authorized distributors?
All TK46A08N1,S4X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK46A08N1,S4X meets industry standards.
7.What is the process for return or replacement of TK46A08N1,S4X?
All TK46A08N1,S4X units undergo pre-shipment inspection (PSI). If there is an issue with TK46A08N1,S4X, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TK46A08N1,S4X part is unused and in its original packaging.
Return procedure for TK46A08N1,S4X:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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