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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK5A80E,S4X

Name: TK5A80E,S4X
Brand: Toshiba Semiconductor and Storage
SKU: TK5A80E,S4X
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK5A80E,S4X

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: TK5A80E,S4X.pdf

Description:: PB-F POWER MOSFET TRANSISTOR TO-

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Product details

Overview

TK5A80E from Toshiba is a silicon N-channel power MOSFET in the π-MOSⅢ family, designed for high-voltage switching applications. It delivers 5.0 A DC drain current, 800 V drain-source breakdown voltage, and low on-resistance of 1.9 Ω (typ.) at V_GS = 10 V, enabling efficient operation in offline SMPS and industrial AC-DC converters.

For engineers reviewing the TK5A80E datasheet, TK5A80E pinout, TK5A80E application, or TK5A80E equivalent, key selection considerations include its 800 V V_DSS, TO-220SIS package thermal performance (R_th(ch-c) = 3.125 °C/W), avalanche ruggedness (E_AS = 205 mJ), and gate threshold range (2.5–4.0 V) for reliable drive in high-noise environments.

Technical Context

This MOSFET employs a planar vertical structure optimized for high-voltage blocking and low conduction loss. Its enhancement-mode operation with V_th = 2.5–4.0 V ensures compatibility with standard 5 V or 10 V gate drivers, while the integrated body diode supports freewheeling in flyback and forward topologies.

The device features robust dynamic characteristics: C_iss = 950 pF, Q_g = 20 nC, and dv/dt ruggedness ≥15 V/ns - critical for stable operation under fast-switching, high-dV/dt conditions in isolated power supplies without spurious turn-on.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	800 V - supports primary-side switching in universal-input (85–265 VAC) offline SMPS without derating.
R_DS(ON)	1.9 Ω (typ.) at V_GS = 10 V - enables <10 W conduction loss at 5 A, reducing heatsink requirements.
I_D (DC)	5.0 A - rated for continuous output up to ~60 W in 65–100 kHz flyback designs with adequate heatsinking.
E_AS	205 mJ - withstands single-pulse inductive energy in clamp circuits, eliminating need for external snubbers in many cases.
Q_g	20 nC - determines gate drive power and switching speed; compatible with low-cost bipolar or CMOS gate drivers.
dv/dt Ruggedness	≥15 V/ns - prevents false triggering during high-slew-rate transients in high-frequency, high-isolation designs.
T_ch max	150 °C - defines maximum junction temperature for reliability-limited lifetime calculations per JEDEC JEP47.

Pinout & Package

TK5A80E is housed in a TO-220SIS (TOSHIBA 2-10U1S) package - an insulated variant of TO-220 with electrically isolated tab, enabling direct mounting to heatsinks without insulating washers. Thermal resistance from channel to case is 3.125 °C/W, supporting up to 40 W power dissipation at T_c = 25 °C.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	Receives gate drive signal; requires ≤±30 V rating and low-impedance path to minimize ringing and EMI.
2 (Drain)	High-voltage output node	Connected to transformer primary or bus rail; carries full switching voltage and must be routed with clearance ≥4 mm for 800 V.
3 (Source)	Reference node / return path	Serves as local ground reference for gate driver; layout must minimize inductance to prevent shoot-through during switching.

Key Features

Feature	Design Value
Low R_DS(ON)	1.9 Ω typ. reduces I²R losses in high-current, low-duty-cycle applications like PFC boost stages.
High V_DSS rating	800 V allows use in 400 V DC bus systems with ≥20% voltage margin for surge and ringing.
Enhancement-mode threshold	V_th = 2.5–4.0 V ensures clean turn-on with standard logic-level drivers and avoids accidental conduction at low V_GS.
Integrated body diode	V_DSF ≈ −1.7 V (max) and t_rr = 900 ns support synchronous rectification in secondary-side flyback configurations.
Avalanche-rated	Guaranteed E_AS = 205 mJ enables robust operation in inductive load switching without external protection.

Applications

AC-DC Power Adapters	Industrial SMPS
Use Scenario: 36 W universal-input offline flyback converter for medical-grade wall adapters. IC Role / Device Role / Timing Role: Primary-side high-voltage switch controlling energy transfer to isolated secondary winding. Use Value: 800 V rating accommodates 340 V peak line plus 100 V ringing; 1.9 Ω R_DS(ON) keeps conduction loss below 4.8 W at full load.	Use Scenario: 75 W open-frame power supply for PLC I/O modules operating in 0–60 °C ambient. IC Role / Device Role / Timing Role: Main switching element in active-clamp forward topology with 100 kHz switching frequency. Use Value: 205 mJ single-pulse avalanche energy absorbs clamp circuit transients; TO-220SIS isolation eliminates need for mica washers.
LED Driver Power Stages	Motor Control Pre-Drivers
Use Scenario: Constant-current LED driver for street lighting using buck-boost topology with 300 V DC input. IC Role / Device Role / Timing Role: High-side switch regulating average LED current via PWM dimming at 1–10 kHz. Use Value: Low Q_g (20 nC) enables fast, low-loss switching at dimming frequencies; 15 V/ns dv/dt rating suppresses false turn-on.	Use Scenario: Half-bridge pre-driver stage for 24 V BLDC motor control in HVAC blowers. IC Role / Device Role / Timing Role: High-side switch in discrete gate driver circuit driving N-channel MOSFET half-bridge. Use Value: V_th range ensures reliable turn-on with bootstrap-supplied 10 V gate drive; TO-220SIS allows direct heatsink mounting in compact enclosures.

AC-DC Power Adapters

Industrial SMPS

Use Scenario: 36 W universal-input offline flyback converter for medical-grade wall adapters.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch controlling energy transfer to isolated secondary winding.

Use Value: 800 V rating accommodates 340 V peak line plus 100 V ringing; 1.9 Ω R_DS(ON) keeps conduction loss below 4.8 W at full load.

Use Scenario: 75 W open-frame power supply for PLC I/O modules operating in 0–60 °C ambient.

IC Role / Device Role / Timing Role: Main switching element in active-clamp forward topology with 100 kHz switching frequency.

Use Value: 205 mJ single-pulse avalanche energy absorbs clamp circuit transients; TO-220SIS isolation eliminates need for mica washers.

LED Driver Power Stages

Motor Control Pre-Drivers

Use Scenario: Constant-current LED driver for street lighting using buck-boost topology with 300 V DC input.

IC Role / Device Role / Timing Role: High-side switch regulating average LED current via PWM dimming at 1–10 kHz.

Use Value: Low Q_g (20 nC) enables fast, low-loss switching at dimming frequencies; 15 V/ns dv/dt rating suppresses false turn-on.

Use Scenario: Half-bridge pre-driver stage for 24 V BLDC motor control in HVAC blowers.

IC Role / Device Role / Timing Role: High-side switch in discrete gate driver circuit driving N-channel MOSFET half-bridge.

Use Value: V_th range ensures reliable turn-on with bootstrap-supplied 10 V gate drive; TO-220SIS allows direct heatsink mounting in compact enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5NK80ZFP	800 V V_DSS, R_DS(ON) = 1.6 Ω (typ.), but higher Q_g = 32 nC and no guaranteed E_AS spec.	Less suitable for avalanche-prone clamp circuits; better for low-Q_g-sensitive high-frequency designs where conduction loss dominates.	Prefer when gate drive strength is limited and avalanche stress is minimal.
FQP8N80C	800 V V_DSS, R_DS(ON) = 1.4 Ω (typ.), but only rated for 4.5 A DC and lacks published dv/dt ruggedness data.	Not recommended for 5 A continuous or high-dv/dt environments; best for lower-power, cost-sensitive consumer SMPS.	Choose only if thermal budget permits higher R_DS(ON) derating and system dv/dt is controlled.

Compared with STP5NK80ZFP and FQP8N80C, the TK5A80E offers balanced trade-offs: superior avalanche capability (205 mJ vs. unspecified), verified dv/dt immunity (≥15 V/ns), and tighter V_th control (2.5–4.0 V), making it preferred for industrial-grade, reliability-critical offline power conversion.

Availability

TK5A80E is available at Aetrix Electronics and suitable for AC-DC power adapters, industrial SMPS, and LED driver power stages requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for TK5A80E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions, with decades of expertise in high-reliability discrete components.

The TK5A80E belongs to Toshiba's π-MOSⅢ high-voltage MOSFET product line, engineered specifically for efficiency and ruggedness in offline switching power supplies and industrial power conversion systems.

FAQ

What is the maximum continuous drain current rating for TK5A80E?

The TK5A80E is rated for 5.0 A DC drain current at T_c = 25 °C. This value assumes proper heatsinking and derating per the R_th(ch-c) = 3.125 °C/W specification. At elevated case temperatures, the current must be reduced linearly to maintain T_ch ≤ 150 °C - for example, to ~3.5 A at T_c = 70 °C. The TK5A80E datasheet provides the full derating curve in Figure 8.12.

Does TK5A80E have avalanche capability, and is it specified in the datasheet?

Yes, the TK5A80E has fully specified single-pulse avalanche capability: E_AS = 205 mJ (tested per Note 1, V_DD = 90 V, T_ch = 25 °C, L = 14.9 mH). This rating is guaranteed and published in the Absolute Maximum Ratings table. Unlike many MOSFETs, the TK5A80E datasheet explicitly guarantees this parameter, confirming its suitability for inductive switching without external clamping in many designs.

What is the gate threshold voltage range for TK5A80E, and how does it affect drive design?

The TK5A80E has a gate threshold voltage V_th of 2.5–4.0 V (measured at V_DS = 10 V, I_D = 0.5 mA). This range ensures reliable turn-on with standard 5 V logic or 10 V gate drivers while avoiding unintended conduction from noise. For robust operation, gate drive should exceed 6 V minimum to ensure full enhancement; the TK5A80E achieves R_DS(ON) = 1.9 Ω typ. at V_GS = 10 V.

Is TK5A80E RoHS compliant, and what marking indicates compliance?

Yes, the TK5A80E is RoHS compliant. Per the datasheet marking note, RoHS-compliant units are marked with an underlined lot number and carry [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] labeling. Non-RoHS versions show [[Pb]]/INCLUDES > MCV. All TK5A80E units supplied by Aetrix Electronics meet EU Directive 2011/65/EU requirements, and full compliance documentation is available upon request.

What is the thermal resistance from channel to case (R_th(ch-c)) for TK5A80E, and how is it used in thermal design?

The TK5A80E has a maximum channel-to-case thermal resistance R_th(ch-c) of 3.125 °C/W, measured under specified test conditions (Note 1). This value is used to calculate junction temperature rise above case temperature: ΔT = P_D × R_th(ch-c). For example, at 20 W dissipation, ΔT = 62.5 °C - so with T_c = 70 °C, T_ch = 132.5 °C, staying within the 150 °C limit. This R_th(ch-c) applies only when mounted per JEDEC standards with proper torque (0.6 N·m).

TK5A80E,S4X Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: -

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.4Ohm @ 2.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 500µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 950 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 40W (Tc)

Operating Temperature:: 150°C

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220SIS

TK5A80E,S4X FAQ

1.How can I place an order for TK5A80E,S4X through Aetrix?

Please submit a Request for Quotation (RFQ) for TK5A80E,S4X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK5A80E,S4X reliable?

The price and inventory of TK5A80E,S4X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK5A80E,S4X is usually 5 days.

3.What payment methods are accepted for TK5A80E,S4X?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK5A80E,S4X transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK5A80E,S4X?

TK5A80E,S4X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK5A80E,S4X order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK5A80E,S4X?

For technical support, including TK5A80E,S4X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK5A80E,S4X requirements.

6.How does Aetrix verify that TK5A80E,S4X is sourced from the original manufacturer or authorized distributors?

All TK5A80E,S4X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK5A80E,S4X meets industry standards.

7.What is the process for return or replacement of TK5A80E,S4X?

All TK5A80E,S4X units undergo pre-shipment inspection (PSI). If there is an issue with TK5A80E,S4X, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK5A80E,S4X part is unused and in its original packaging.

Return procedure for TK5A80E,S4X:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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