Toshiba Semiconductor and Storage TK5A45DA(STA4,Q,M)

Overview

TK5A45DA(STA4,Q,M) from Toshiba is a silicon N-channel power MOSFET in the π-MOSⅡ family, designed for high-voltage switching in offline DC-DC converters and AC-DC power supplies. It delivers 450 V drain-source breakdown voltage, 4.5 A continuous drain current, and 1.52 Ω typical R_DS(ON) at V_GS = 10 V, enabling efficient operation in flyback and forward regulator topologies.

For engineers reviewing the TK5A45DA(STA4,Q,M) datasheet, TK5A45DA(STA4,Q,M) pinout, TK5A45DA(STA4,Q,M) application, or TK5A45DA(STA4,Q,M) equivalent, key selection criteria include avalanche ruggedness (122 mJ single-pulse), gate threshold range (2.4–4.4 V), thermal resistance (4.17 °C/W channel-to-case), and TO-220SIS package compatibility with heatsink mounting.

Technical Context

This MOSFET employs a planar vertical structure optimized for high-voltage blocking and low conduction loss. Its enhancement-mode operation requires positive gate drive only, with gate threshold voltage specified between 2.4 V and 4.4 V at V_DS = 10 V and I_D = 1 mA - ensuring reliable turn-on under standard 10 V gate drive while avoiding spurious activation near ground.

It supports repetitive avalanche operation up to 3.0 mJ per pulse and features low input capacitance (380 pF typ.) and fast switching (rise time 18 ns, fall time 7 ns), making it suitable for fixed-frequency PWM controllers operating below 100 kHz in industrial and consumer SMPS designs.

Key Specifications

Pinout & Package

TK5A45DA(STA4,Q,M) uses the TO-220SIS (JEITA SC-67) package - a through-hole, isolated-tab variant with internal source-drain isolation, enabling direct heatsink mounting without insulating washers. The package weighs 1.7 g and features a standardized footprint compatible with automated insertion equipment.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP5NK50ZFP and IRFBC40APBF, TK5A45DA(STA4,Q,M) offers optimal balance of 450 V rating, low R_DS(ON), certified avalanche ruggedness, and isolated-tab packaging - simplifying thermal design and improving long-term reliability in regulated offline power supplies.

Availability

TK5A45DA(STA4,Q,M) is available at Aetrix Electronics and suitable for switching power supplies, flyback converters, DC-DC converters, and LED drivers requiring stable component supply, consistent parametric performance, and long-lifecycle availability.

Supply support for TK5A45DA(STA4,Q,M) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions, with decades of expertise in discrete power MOSFET design.

TK5A45DA(STA4,Q,M) belongs to Toshiba's π-MOSⅡ high-voltage MOSFET product line, engineered specifically for energy-efficient, cost-optimized offline AC-DC and DC-DC conversion in consumer, industrial, and lighting applications.

FAQ

What is the maximum continuous drain current for TK5A45DA(STA4,Q,M)?

The TK5A45DA(STA4,Q,M) supports a maximum continuous drain current (I_D) of 4.5 A at T_c = 25 °C. This rating assumes proper heatsinking and derating per the datasheet's thermal curves - at 100 °C case temperature, the usable I_D drops to approximately 2.5 A due to thermal limitations. Always verify channel temperature remains ≤150 °C in final layout.

Does TK5A45DA(STA4,Q,M) have avalanche capability?

Yes, TK5A45DA(STA4,Q,M) is fully rated for single-pulse avalanche energy (E_AS) of 122 mJ and repetitive avalanche energy (E_AR) of 3.0 mJ. These values are measured under defined conditions (V_DD ≈ 90 V, L = 10 mH, I_AR = 4.5 A) and confirm its suitability for inductive switching applications where transformer leakage energy must be safely clamped.

What is the gate threshold voltage range for TK5A45DA(STA4,Q,M)?

The gate threshold voltage (V_th) of TK5A45DA(STA4,Q,M) is specified from 2.4 V to 4.4 V at V_DS = 10 V and I_D = 1 mA. This range ensures predictable turn-on behavior across process and temperature variations, and supports compatibility with standard 12 V gate drivers while maintaining noise immunity below 2 V.

Is TK5A45DA(STA4,Q,M) RoHS compliant?

Yes, TK5A45DA(STA4,Q,M) is RoHS compliant. Per Toshiba's marking note, underlined lot numbers indicate [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] status. The device meets Directive 2011/65/EU and contains lead only as an exempted impurity in solderable terminations - confirmed in Toshiba's environmental compliance documentation.

What package type does TK5A45DA(STA4,Q,M) use?

TK5A45DA(STA4,Q,M) uses the TO-220SIS package (JEITA SC-67), which features an electrically isolated drain tab. This allows direct mechanical attachment to a heatsink without requiring insulating hardware, simplifying thermal design and improving long-term reliability in high-power density applications.