Toshiba Semiconductor and Storage TK4A80E,S4X

Overview

TK4A80E from Toshiba is a silicon N-channel power MOSFET in the π-MOSⅢ family, designed for high-voltage switching applications. It delivers 800 V drain-source breakdown voltage, 4.0 A DC drain current, and a typical R_DS(ON) of 2.8 Ω at V_GS = 10 V, enabling efficient operation in offline AC-DC converters and industrial SMPS.

For engineers reviewing the TK4A80E datasheet, TK4A80E pinout, TK4A80E application, or TK4A80E equivalent, key selection criteria include its 800 V rating, TO-220SIS package with isolated tab, avalanche energy rating of 152 mJ, and gate threshold voltage range of 2.5–4.0 V under standard test conditions.

Technical Context

The TK4A80E employs a planar vertical DMOS structure optimized for ruggedness and fast switching in hard-switched topologies. Its enhancement-mode operation requires positive gate drive only, with gate threshold defined at V_DS = 10 V and I_D = 0.4 mA, and exhibits low input capacitance (C_iss = 650 pF) and reverse transfer capacitance (C_rss = 6 pF) at V_DS = 25 V.

Thermal performance is characterized by a channel-to-case thermal resistance of 3.57 °C/W and maximum channel temperature of 150 °C. The device supports single-pulse avalanche operation up to 152 mJ at T_ch = 25 °C with specified test conditions (V_DD = 90 V, L = 17.3 mH, R_G = 25 Ω, I_AR = 4.0 A).

Key Specifications

Pinout & Package

TK4A80E is housed in a TO-220SIS package (Toshiba designation: 2-10U1S), featuring an electrically isolated metal tab rated for 2000 V_RMS isolation and 0.6 N·m mounting torque. The package weighs 1.7 g and provides enhanced creepage/clearance for high-voltage safety compliance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP4NK80ZFP and IXTP4N80P, the TK4A80E offers integrated 2000 V_RMS isolation in TO-220SIS-eliminating need for insulating hardware-and matches or exceeds both in R_DS(ON) and avalanche energy, making it optimal for safety-critical, space-constrained high-voltage designs.

Availability

TK4A80E is available at Aetrix Electronics and suitable for industrial switching power supplies, LED streetlight drivers, and AC-DC adapters requiring stable component supply and long-term manufacturability.

Supply support for TK4A80E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions, with global manufacturing and quality infrastructure.

The TK4A80E belongs to Toshiba's π-MOSⅢ high-voltage MOSFET product line, engineered for reliability and efficiency in offline AC-DC conversion, motor control, and industrial power systems.

FAQ

What is the maximum gate-source voltage rating for TK4A80E?

The TK4A80E specifies a maximum gate-source voltage (V_GS) of ±30 V. Exceeding this limit risks permanent gate oxide damage. In practical designs, gate drive circuits should clamp V_GS to ≤ ±20 V for margin, especially during transients or hot-plug events. This rating is confirmed in the Absolute Maximum Ratings table of the official Toshiba datasheet Rev.4.0.

Does TK4A80E have built-in avalanche capability, and how is it rated?

Yes, the TK4A80E is fully rated for single-pulse avalanche operation with E_AS = 152 mJ at T_ch = 25 °C, tested under defined conditions (V_DD = 90 V, L = 17.3 mH, R_G = 25 Ω, I_AR = 4.0 A). This rating validates its ability to absorb inductive energy without failure, reducing need for external clamping components in flyback or forward converters.

What is the thermal resistance from channel to case for TK4A80E, and how does it affect heatsink selection?

The TK4A80E has a channel-to-case thermal resistance (R_th(ch-c)) of 3.57 °C/W maximum. When dissipating 3.5 W at 4 A and 2.8 Ω R_DS(ON), this implies ~12.5 °C temperature rise across the die-to-case interface. Heatsink selection must account for additional R_th(c-s) and R_th(s-a) to maintain T_ch ≤ 150 °C under worst-case ambient and airflow conditions.

How does the TO-220SIS package of TK4A80E differ from standard TO-220 in terms of isolation and mounting?

The TO-220SIS package of TK4A80E provides 2000 V_RMS isolation between the drain-connected tab and mounting surface, unlike standard TO-220 which requires an insulating pad. Its 0.6 N·m mounting torque specification ensures reliable thermal contact without tab deformation, and the isolated design eliminates risk of shorting the drain to chassis ground in Class I AC-powered equipment.

What is the typical gate charge profile of TK4A80E, and how does it impact switching performance?

The TK4A80E has typical total gate charge Q_g = 15 nC, with Q_gs1 = 5 nC and Q_gd = 7 nC at V_DD ≈ 400 V and I_D = 4.0 A. This low Q_gd/Q_g ratio contributes to fast, controllable turn-off and reduced Miller plateau duration, supporting clean 65–130 kHz switching in QR flyback designs without excessive gate driver power dissipation.